Critical Evaluation of Organic Thin-Film Transistor Models
Authors:
Markus Krammer,
James W. Borchert,
Andreas Petritz,
Esther Karner-Petritz,
Gerburg Schider,
Barbara Stadlober,
Hagen Klauk,
Karin Zojer
Abstract:
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. W…
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Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.
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Submitted 20 December, 2018;
originally announced December 2018.
Impact of thermal transport parameters on the operating temperature of OLEDs
Authors:
Georgii Krikun,
Karin Zojer
Abstract:
Excess heat in organic light emitting diodes (OLEDs) that is produced during their operation may accelerate their degradation and may cause an inhomogeneous brightness distribution, in particular in large area OLEDs. Assessing the quantitative impact of heat excess is difficult, because all decisive processes related to charge transport and emission via charge recombination are thermally activated…
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Excess heat in organic light emitting diodes (OLEDs) that is produced during their operation may accelerate their degradation and may cause an inhomogeneous brightness distribution, in particular in large area OLEDs. Assessing the quantitative impact of heat excess is difficult, because all decisive processes related to charge transport and emission via charge recombination are thermally activated. For example, electric currents that are elevated due to larger temperatures cause additional Joule heating and increase, hence, the device temperature even further. Here we establish how parameters responsible for heat transport, i.e., the thermal conductivity of the organic layers and the heat transfer coefficient between the device surface and the environment govern the temperature inside the OLED. We establish, relying on three-dimensional drift-diffusion simulations that self-consistently couple thermally-activated charge transport and heat transport, that the thermal conductivity of organic layers is not a bottleneck for heat transport, because the encountered layer thicknesses in realistic device geometries prevent heat accumulation. The heat transfer to the ambient environment is the key parameter to dissipate excess heat from the device. Intentionally elevated operating temperatures, that may improve the OLEDs electric performance, are not necessarily beneficial, as any increase in operating temperature decreases the device stability. The thermal effects being decisive for the OLED temperature occur in device layers beyond the electrically active region. We propose analytical expressions that relate the temperature in the device for a given point of operation to the heat transfer to the environment and the substrate.
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Submitted 31 October, 2018;
originally announced October 2018.
