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Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
Authors:
E. M. T. Fadaly,
A. Dijkstra,
J. R. Suckert,
D. Ziss,
M. A. J. v. Tilburg,
C. Mao,
Y. Ren,
V. T. v. Lange,
S. Kölling,
M. A. Verheijen,
D. Busse,
C. Rödl,
J. Furthmüller,
F. Bechstedt,
J. Stangl,
J. J. Finley,
S. Botti,
J. E. M. Haverkort,
E. P. A. M. Bakkers
Abstract:
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades…
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Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.
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Submitted 2 November, 2019;
originally announced November 2019.
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Micromachining of PMN-PT Crystals with Ultrashort Laser Pulses
Authors:
Giovanni Piredda,
Sandra Stroj,
Dorian Ziss,
Julian Stangl,
Rinaldo Trotta,
Javier Martín-Sánchez,
Armando Rastelli
Abstract:
Lead-magnesium niobate lead-titanate (PMN-PT) has been proven as an excellent material for sensing and actuating applications. The fabrication of advanced ultra-small PMN-PT-based devices relies on the availability of sophisticated procedures for the micro-machining of PMN-PT thin films or bulk substrates. Approaches reported up to date include chemical etching, excimer laser ablation and ion mill…
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Lead-magnesium niobate lead-titanate (PMN-PT) has been proven as an excellent material for sensing and actuating applications. The fabrication of advanced ultra-small PMN-PT-based devices relies on the availability of sophisticated procedures for the micro-machining of PMN-PT thin films or bulk substrates. Approaches reported up to date include chemical etching, excimer laser ablation and ion milling. To ensure an excellent device performance, a key mandatory feature for a micro-machining process is to preserve as far as possible the crystalline quality of the substrates; in other words, the fabrication method must induce a low density of cracks and other kind of defects. In this work, we demonstrate a relatively fast procedure for the fabrication of high-quality PMN-PT micro-machined actuators employing green femtosecond laser pulses. The fabricated devices feature absence of extended cracks and well defined edges with relatively low roughness, which is advantageous for the further integration of nanomaterials onto the piezoelectric actuators.
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Submitted 29 November, 2018;
originally announced November 2018.
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Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
Authors:
Javier Martin-Sanchez,
Rinaldo Trotta,
Antonio Mariscal,
Rosalia Serna,
Giovanni Piredda,
Sandra Stroj,
Johannes Edlinger,
Christian Schimpf,
Johannes Aberl,
Thomas Lettner,
Johannes Wildmann,
Huiying Huang,
Xueyong Yuan,
Dorian Ziss,
Julian Stangl,
Armando Rastelli
Abstract:
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to…
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The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.
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Submitted 19 October, 2017;
originally announced October 2017.
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Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators
Authors:
Dorian Ziss,
Javier Martín-Sánchez,
Thomas Lettner,
Alma Halilovic,
Giovanna Trevisi,
Rinaldo Trotta,
Armando Rastelli,
Julian Stangl
Abstract:
In this paper strain transfer efficiencies from single crystalline piezoelectric lead magnesium niobate-lead titanate (PMN-PT) substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely gold-thermo-compression and polymer-based S…
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In this paper strain transfer efficiencies from single crystalline piezoelectric lead magnesium niobate-lead titanate (PMN-PT) substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the "soft" SU8 bonding in comparison to the "hard" bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows to explain this unexpected result with the presence of complex interface structures between the different layers.
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Submitted 1 February, 2017;
originally announced February 2017.
