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Effect of device design on charge offset drift in Si/SiO$_2$ single electron devices
Authors:
Binhui Hu,
Erick D. Ochoa,
Daniel Sanchez,
Justin K. Perron,
Neil M. Zimmerman,
M. D. Stewart Jr
Abstract:
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accoun…
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We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance $C_m$ between defects and the quantum dot, and increase in the total defect capacitance $C_d$ due to the top gate. These results depart from the accepted understanding that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in develo** SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.
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Submitted 11 July, 2018;
originally announced July 2018.
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Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
Authors:
Peihao Huang,
Neil M. Zimmerman,
Garnett W. Bryant
Abstract:
Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due to $1/f$ charge noise for two electrons in a double quantum dot used for a two-qubit controlled-phase gate. In contrast to the usual belief, spin decoherence ca…
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Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due to $1/f$ charge noise for two electrons in a double quantum dot used for a two-qubit controlled-phase gate. In contrast to the usual belief, spin decoherence can be dominated by the tunneling noise from $1/f$ charge noise instead of the detuning noise. Tunneling noise can dominate because the effect of tunneling noise on the spin qubit is first order in the charge admixture; while the effect of the detuning noise is only second order. The different orders of contributions result in different detuning dependence of the decoherence, which provides a way to identify the noise source. We find that decoherence in a recent two-qubit experiment was dominated by the tunneling noise from $1/f$ charge noise. The results illustrate the importance of considering tunneling noise to design optimal operation of spin qubits.
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Submitted 27 November, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Long-term drift of Si-MOS quantum dots with intentional donor implants
Authors:
Martin Rudolph,
Bahman Sarabi,
Roy Murray,
Malcolm S. Carrol,
Neil M. Zimmerman
Abstract:
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics in the form of transients and discrete jumps that are not dependent on the properti…
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Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics in the form of transients and discrete jumps that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a $1/f$ noise dependence, and a noise strength as low as $1~\mathrm{μeV/\sqrt{Hz}}$, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or $1/f$ noise.
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Submitted 23 January, 2018;
originally announced January 2018.
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Machine Learning techniques for state recognition and auto-tuning in quantum dots
Authors:
Sandesh S. Kalantre,
Justyna P. Zwolak,
Stephen Ragole,
Xingyao Wu,
Neil M. Zimmerman,
M. D. Stewart,
Jacob M. Taylor
Abstract:
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many cases, including in quantum-dot based architectures, the parameter space grows substantially with the number of qubits, and may become a limit to scalability. Fort…
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Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many cases, including in quantum-dot based architectures, the parameter space grows substantially with the number of qubits, and may become a limit to scalability. Fortunately, machine learning techniques for pattern recognition and image classification using so-called deep neural networks have shown surprising successes for computer-aided understanding of complex systems. In this work, we use deep and convolutional neural networks to characterize states and charge configurations of semiconductor quantum dot arrays when one can only measure a current-voltage characteristic of transport (here conductance) through such a device. For simplicity, we model a semiconductor nanowire connected to leads and capacitively coupled to depletion gates using the Thomas-Fermi approximation and Coulomb blockade physics. We then generate labelled training data for the neural networks, and find at least $90\,\%$ accuracy for charge and state identification for single and double dots purely from the dependence of the nanowire's conductance upon gate voltages. Using these characterization networks, we can then optimize the parameter space to achieve a desired configuration of the array, a technique we call `auto-tuning'. Finally, we show how such techniques can be implemented in an experimental setting by applying our approach to an experimental data set, and outline further problems in this domain, from using charge sensing data to extensions to full one and two-dimensional arrays, that can be tackled with machine learning.
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Submitted 15 February, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
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Possible hundredfold enhancement in the direct magnetic coupling of a single atomic spin to a circuit resonator
Authors:
Bahman Sarabi,
Peihao Huang,
Neil M. Zimmerman
Abstract:
We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device consisting of a trilayer lumped-element superconducting resonator and a single donor implanted in enriched $^{28}$Si. The resonator impedance is significantly smaller than the practically achievable limit using prevalent c…
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We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device consisting of a trilayer lumped-element superconducting resonator and a single donor implanted in enriched $^{28}$Si. The resonator impedance is significantly smaller than the practically achievable limit using prevalent coplanar resonators. Furthermore, the resonator includes a nano-scale spiral inductor to spatially focus the magnetic field from the photons at the location of the implanted donor. The design promises approximately two orders of magnitude increase in the local magnetic field, and thus the spin to photon coupling rate $g$, compared to the estimated coupling rate to the magnetic field of coplanar transmission-line resonators. We show that by using niobium (aluminum) as the resonator's superconductor and a single phosphorous (bismuth) atom as the donor, a coupling rate of $g/2π$=0.24 MHz (0.39 MHz) can be achieved in the single photon regime. For this hybrid cavity quantum electrodynamic system, such enhancement in $g$ is sufficient to enter the strong coupling regime.
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Submitted 2 July, 2018; v1 submitted 7 February, 2017;
originally announced February 2017.
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"What is The SI?" A Proposal for an Educational Adjunct to the SI Redefinition
Authors:
Neil M. Zimmerman,
David B. Newell
Abstract:
We discuss how the likely 2018 redefinition of the SI system of units might affect the ability of students to understand the link between the units and the new system. The likely redefinition will no longer define a set of base units, but rather a set of constants of nature, such as the speed of light c and a particular hyperfine splitting in Cs $Δν(^{133}$Cs)$_{hfs}$. We point out that this list…
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We discuss how the likely 2018 redefinition of the SI system of units might affect the ability of students to understand the link between the units and the new system. The likely redefinition will no longer define a set of base units, but rather a set of constants of nature, such as the speed of light c and a particular hyperfine splitting in Cs $Δν(^{133}$Cs)$_{hfs}$. We point out that this list of constants need not be the only way to introduce students to the subject, either in class or in textbooks. We suggest an alternative way to introduce high school and undergraduate students to the redefined SI, by suggesting a list of experiments for some units; this list would be completely compatible with the redefined SI, and would have all of the same scientific and technological advantages. We demonstrate by questionnaire results that this alternative is more appealing to students. We hope to spur a discussion amongst teachers regarding this important topic for high school and undergraduate physics courses.
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Submitted 16 November, 2016;
originally announced November 2016.
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An electrically driven spin qubit based on valley mixing
Authors:
Wister Huang,
Menno Veldhorst,
Neil M. Zimmerman,
Andrew S. Dzurak,
Dimitrie Culcer
Abstract:
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum do…
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The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a hetero-interface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave-function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times of 170ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.
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Submitted 21 November, 2016; v1 submitted 7 August, 2016;
originally announced August 2016.
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Valley blockade in a silicon double quantum dot
Authors:
Justin K. Perron,
Michael J. Gullans,
Jacob M. Taylor,
M. D. Stewart, Jr.,
Neil M. Zimmerman
Abstract:
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed cu…
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Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocking of tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data.
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Submitted 8 November, 2017; v1 submitted 20 July, 2016;
originally announced July 2016.
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A new Regime of Pauli-Spin Blockade
Authors:
Justin K. Perron,
M. D. Stewart Jr.,
Neil M. Zimmerman
Abstract:
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, wher…
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Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, where PSB occurs in the forward $(1,1)\rightarrow(0,2)$ tunneling direction, we highlight some aspects of PSB that are not discussed in detail in existing literature, including the change in size of both bias triangles measured in the forward and reverse biasing directions as a function of B. At higher fields we predict a crossover to \reverse PSB" in which current is blockaded in the reverse direction due to the occupation of a spin singlet as opposed to the traditional triplet blockade that occurs at low fields. The onset of reverse PSB coincides with the development of a tail like feature in the measured bias triangles and occurs when the Zeeman energy of the polarized triplet equals the exchange energy in the (0,2) charge configuration. In Si quantum dots these fields are experimentally accessible; thus, this work suggests a way to probe singlet to triplet relaxation mechanisms in quantum dots when both electrons occupy the same quantum dot.
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Submitted 27 July, 2015;
originally announced July 2015.
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A quantitative study of bias triangles presented in chemical potential space
Authors:
Justin K. Perron,
M. D. Stewart Jr.,
Neil M. Zimmerman
Abstract:
We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demo…
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We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices.
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Submitted 14 January, 2015;
originally announced January 2015.
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Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures
Authors:
Ted Thorbeck,
Neil M. Zimmerman
Abstract:
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of st…
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Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
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Submitted 11 September, 2014;
originally announced September 2014.
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Charge Offset Stability in Si Single Electron Devices with Al Gates
Authors:
Neil M. Zimmerman,
Chih-Hwan Yang,
Nai Shyan Lai,
Wee Han Lim,
Andrew S. Dzurak
Abstract:
We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset…
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We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability.
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Submitted 29 June, 2014;
originally announced June 2014.
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Dephasing of Si singlet-triplet qubits due to charge and spin defects
Authors:
Dimitrie Culcer,
Neil M. Zimmerman
Abstract:
We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates $Γ_φ$ due to various classes of defects to experimentally measu…
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We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates $Γ_φ$ due to various classes of defects to experimentally measurable parameters such as charge dipole moment, spin dipole moment and fluctuator switching times. We find that charge fluctuators are more efficient in causing dephasing than spin fluctuators.
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Submitted 19 June, 2013;
originally announced June 2013.
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Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Authors:
Ted Thorbeck,
Akira Fujiwara,
Neil M. Zimmerman
Abstract:
Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimen…
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Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimensions. We also demonstrate that a capacitance simulator can be used to predict measured gate capacitances to within 20%. A simple parallel plate capacitor model can be used to predict how the capacitances change with device dimensions; however, the parallel plate capacitor model fails for the smallest devices because the capacitances are dominated by fringing fields. We show how the capacitances due to fringing fields can be quickly estimated.
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Submitted 2 July, 2012;
originally announced July 2012.
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Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices
Authors:
P. J. Koppinen,
M. D. Stewart, Jr.,
Neil M. Zimmerman
Abstract:
We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and…
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We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.
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Submitted 13 June, 2012;
originally announced June 2012.
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Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire
Authors:
Ted Thorbeck,
Neil M. Zimmerman
Abstract:
We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a capacitance simulation. Because we observe U-QDs in the same location of the wire in multiple devices, their cause is likely to be an unintended consequence of the fabrication, not random atomic-scale defects as is typica…
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We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a capacitance simulation. Because we observe U-QDs in the same location of the wire in multiple devices, their cause is likely to be an unintended consequence of the fabrication, not random atomic-scale defects as is typically assumed. The locations of the U-QDs appear consistent with conduction band modulation from strain from the oxide and the gates. This allows us to suggest methods to reduce the frequency of U-QDs.
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Submitted 24 January, 2012;
originally announced January 2012.
