Showing 51–65 of 65 results for author: Zimmerman, M

An electrically driven spin qubit based on valley mixing

Authors: Wister Huang, Menno Veldhorst, Neil M. Zimmerman, Andrew S. Dzurak, Dimitrie Culcer

Abstract: The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum do… ▽ More The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a hetero-interface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave-function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times of 170ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon. △ Less

Submitted 21 November, 2016; v1 submitted 7 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 95, 075403 (2017)

Valley blockade in a silicon double quantum dot

Authors: Justin K. Perron, Michael J. Gullans, Jacob M. Taylor, M. D. Stewart, Jr., Neil M. Zimmerman

Abstract: Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed cu… ▽ More Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocking of tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data. △ Less

Submitted 8 November, 2017; v1 submitted 20 July, 2016; originally announced July 2016.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 96, 205302 (2017)

Cell lineage tracing using nuclease barcoding

Authors: Stephanie Tzouanas Schmidt, Stephanie M. Zimmerman, Jianbin Wang, Stuart K. Kim, Stephen R. Quake

Abstract: Lineage tracing, the determination and map** of progeny arising from single cells, is an important approach enabling the elucidation of mechanisms underlying diverse biological processes ranging from development to disease. We developed a dynamic sequence-based barcode for lineage tracing and have demonstrated its performance in C. elegans, a model organism whose lineage tree is well established… ▽ More Lineage tracing, the determination and map** of progeny arising from single cells, is an important approach enabling the elucidation of mechanisms underlying diverse biological processes ranging from development to disease. We developed a dynamic sequence-based barcode for lineage tracing and have demonstrated its performance in C. elegans, a model organism whose lineage tree is well established. The strategy we use creates lineage trees based upon the introduction of specific mutations into cells and the propagation of these mutations to daughter cells at each cell division. We present an experimental proof of concept along with a corresponding simulation and analytical model for deeper understanding of the coding capacity of the system. By introducing mutations in a predictable manner using CRISPR/Cas9, our technology will enable more complete investigations of cellular processes. △ Less

Submitted 2 June, 2016; originally announced June 2016.

A new Regime of Pauli-Spin Blockade

Authors: Justin K. Perron, M. D. Stewart Jr., Neil M. Zimmerman

Abstract: Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, wher… ▽ More Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, where PSB occurs in the forward $(1,1)\rightarrow(0,2)$ tunneling direction, we highlight some aspects of PSB that are not discussed in detail in existing literature, including the change in size of both bias triangles measured in the forward and reverse biasing directions as a function of B. At higher fields we predict a crossover to \reverse PSB" in which current is blockaded in the reverse direction due to the occupation of a spin singlet as opposed to the traditional triplet blockade that occurs at low fields. The onset of reverse PSB coincides with the development of a tail like feature in the measured bias triangles and occurs when the Zeeman energy of the polarized triplet equals the exchange energy in the (0,2) charge configuration. In Si quantum dots these fields are experimentally accessible; thus, this work suggests a way to probe singlet to triplet relaxation mechanisms in quantum dots when both electrons occupy the same quantum dot. △ Less

Submitted 27 July, 2015; originally announced July 2015.

Comments: 7 pages (5 main text, 2 supplemental), 3 figures in main text, 2 in supplemental

A quantitative study of bias triangles presented in chemical potential space

Authors: Justin K. Perron, M. D. Stewart Jr., Neil M. Zimmerman

Abstract: We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demo… ▽ More We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices. △ Less

Submitted 14 January, 2015; originally announced January 2015.

Comments: 14 pages, 5 figures

Journal ref: J. Phys.: Condens. Matter 27 (2015) 235302

Anisotropic phases of superfluid 3He in compressed aerogel

Authors: J. I. A. Li, A. M. Zimmerman, J. Pollanen, C. A. Collett, W. P. Halperin

Abstract: It has been shown that the relative stabilities of various superfluid states of 3He can be influenced by anisotropy in a silica aerogel framework. We prepared a suite of aerogel samples compressed up to 30% for which we performed pulsed NMR on 3He imbibed within the aerogel. We identified A and B-phases and determined their magnetic field-temperature phase diagrams as a function of strain. From th… ▽ More It has been shown that the relative stabilities of various superfluid states of 3He can be influenced by anisotropy in a silica aerogel framework. We prepared a suite of aerogel samples compressed up to 30% for which we performed pulsed NMR on 3He imbibed within the aerogel. We identified A and B-phases and determined their magnetic field-temperature phase diagrams as a function of strain. From these results we infer that the B-phase is distorted by negative strain forming an anisotropic superfluid state more stable than the A-phase. △ Less

Submitted 9 January, 2015; originally announced January 2015.

Journal ref: Phys. Rev. Lett. 114, 105302 (2015)

Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures

Authors: Ted Thorbeck, Neil M. Zimmerman

Abstract: Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of st… ▽ More Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation. △ Less

Submitted 11 September, 2014; originally announced September 2014.

Comments: 5 pages, 3 figures, plus supplementary information

Charge Offset Stability in Si Single Electron Devices with Al Gates

Authors: Neil M. Zimmerman, Chih-Hwan Yang, Nai Shyan Lai, Wee Han Lim, Andrew S. Dzurak

Abstract: We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset… ▽ More We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability. △ Less

Submitted 29 June, 2014; originally announced June 2014.

Stability of superfluid 3He-B in compressed aerogel

Authors: J. I. A. Li, A. M. Zimmerman, J. Pollanen, C. A. Collett, W. J. Gannon, W. P. Halperin

Abstract: In recent work it was shown that new anisotropic p-wave states of superfluid 3He can be stabilized within high porosity silica aerogel under uniform positive strain [1]. In contrast, the equilibrium phase in an unstrained aerogel, is the isotropic superfluid B-phase [2]. Here we report that this phase stability depends on the sign of the strain. For negative strain of ~20% achieved by compression,… ▽ More In recent work it was shown that new anisotropic p-wave states of superfluid 3He can be stabilized within high porosity silica aerogel under uniform positive strain [1]. In contrast, the equilibrium phase in an unstrained aerogel, is the isotropic superfluid B-phase [2]. Here we report that this phase stability depends on the sign of the strain. For negative strain of ~20% achieved by compression, the B-phase can be made more stable than the anisotropic A-phase resulting in a tricritical point for A, B, and normal phases with a critical field of ~100 mT. From pulsed NMR measurements we identify these phases and the orientation of the angular momentum. △ Less

Submitted 20 January, 2014; originally announced January 2014.

Comments: 4 pages and 3 figures

Journal ref: Phys. Rev. Lett. 112, 115303 (2014)

The Superfluid Glass Phase of 3He-A

Authors: J. I. A. Li, J. Pollanen, A. M. Zimmerman, C. A. Collett, W. J. Gannon, W. P. Halperin

Abstract: It is established theoretically that an ordered state with continuous symmetry is inherently unstable to arbitrarily small amounts of disorder [1, 2]. This principle is of central importance in a wide variety of condensed systems including superconducting vortices [3, 4], Ising spin models [5] and their dynamics [6], and liquid crystals in porous media [7, 8], where some degree of disorder is ubiq… ▽ More It is established theoretically that an ordered state with continuous symmetry is inherently unstable to arbitrarily small amounts of disorder [1, 2]. This principle is of central importance in a wide variety of condensed systems including superconducting vortices [3, 4], Ising spin models [5] and their dynamics [6], and liquid crystals in porous media [7, 8], where some degree of disorder is ubiquitous, although its experimental observation has been elusive. Based on these ideas it was predicted [9] that 3He in high porosity aerogel would become a superfluid glass. We report here our nuclear magnetic resonance measurements on 3He in aerogel demonstrating destruction of long range orientational order of the intrinsic superfluid orbital angular momentum, confirming the existence of a superfluid glass. In contrast, 3He-A generated by warming from superfluid 3He-B has perfect long-range orientational order providing a mechanism for switching off this effect. △ Less

Submitted 18 August, 2013; originally announced August 2013.

Comments: 5 pages, 5 figures and supplementary information

Journal ref: Nature Physics 9, 775-779 (2013)

Orientation of the Angular Momentum in Superfluid 3He-A in a Stretched Aerogel

Authors: J. I. A. Li, A. M. Zimmerman, J. Pollanen, C. A. Collett, W. J. Gannon, W. P. Halperin

Abstract: Superfluid 3He-A in a fully characterized stretched aerogel, used in previous work [1], has been studied for parallel and perpendicular orientations of the magnetic field relative to the anisotropy axis of the aerogel. Consistently, we find that an equal spin pairing state (ESP) is stabilized down to the lowest temperature. From our pulsed NMR frequency shifts as a function of temperature and tip… ▽ More Superfluid 3He-A in a fully characterized stretched aerogel, used in previous work [1], has been studied for parallel and perpendicular orientations of the magnetic field relative to the anisotropy axis of the aerogel. Consistently, we find that an equal spin pairing state (ESP) is stabilized down to the lowest temperature. From our pulsed NMR frequency shifts as a function of temperature and tip angle, the orientation of the orbital angular momentum l has been determined. The aerogel anisotropy introduced by uniaxial stretching tends to align l in the axial state parallel to the strain axis, confirming the theory proposed by Sauls [2] and contrary to the prediction of Volovik [3] based on an impurity calculation of Rainer and Vuorio [4]. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Comments: 3 pages, 3 figures

Journal ref: J. Low Temp. Phys. 175, 31 (2014)

Dephasing of Si singlet-triplet qubits due to charge and spin defects

Authors: Dimitrie Culcer, Neil M. Zimmerman

Abstract: We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates $Γ_φ$ due to various classes of defects to experimentally measu… ▽ More We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates $Γ_φ$ due to various classes of defects to experimentally measurable parameters such as charge dipole moment, spin dipole moment and fluctuator switching times. We find that charge fluctuators are more efficient in causing dephasing than spin fluctuators. △ Less

Submitted 19 June, 2013; originally announced June 2013.

Journal ref: Appl. Phys. Lett. 102, 232108 (2013)

Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

Authors: Ted Thorbeck, Akira Fujiwara, Neil M. Zimmerman

Abstract: Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimen… ▽ More Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimensions. We also demonstrate that a capacitance simulator can be used to predict measured gate capacitances to within 20%. A simple parallel plate capacitor model can be used to predict how the capacitances change with device dimensions; however, the parallel plate capacitor model fails for the smallest devices because the capacitances are dominated by fringing fields. We show how the capacitances due to fringing fields can be quickly estimated. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 4 pages, 3 figures, to be published in IEEE Trans. Nano

Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

Authors: P. J. Koppinen, M. D. Stewart, Jr., Neil M. Zimmerman

Abstract: We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and… ▽ More We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication. △ Less

Submitted 13 June, 2012; originally announced June 2012.

Comments: 7 pages, 7 figures

Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire

Authors: Ted Thorbeck, Neil M. Zimmerman

Abstract: We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a capacitance simulation. Because we observe U-QDs in the same location of the wire in multiple devices, their cause is likely to be an unintended consequence of the fabrication, not random atomic-scale defects as is typica… ▽ More We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a capacitance simulation. Because we observe U-QDs in the same location of the wire in multiple devices, their cause is likely to be an unintended consequence of the fabrication, not random atomic-scale defects as is typically assumed. The locations of the U-QDs appear consistent with conduction band modulation from strain from the oxide and the gates. This allows us to suggest methods to reduce the frequency of U-QDs. △ Less

Submitted 24 January, 2012; originally announced January 2012.