Chlorine do** of MoSe2 flakes by ion implantation
Authors:
Slawomir Prucnal,
Arsalan Hashemi,
Mahdi Ghorbani-Asl,
René Hübner,
Juanmei Duan,
Yidan Wei,
Divanshu Sharma,
Dietrich R. T. Zahn,
René Ziegenrücker,
Ulrich Kentsch,
Arkady V. Krasheninnikov,
Manfred Helm,
Shengqiang Zhou
Abstract:
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable do** is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable do**. In this work, we demonstrat…
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The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable do** is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable do**. In this work, we demonstrate n-type do** in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 °C is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type do** of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities.
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Submitted 24 September, 2021;
originally announced September 2021.
