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Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires
Authors:
H. J. Hu,
W. L. Zhen,
S. R. Weng,
Y. D. Li,
R. Niu,
Z. L. Yue,
F. Xu,
L. Pi,
C. J. Zhang,
W. K. Zhu
Abstract:
Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report…
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Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 x 10$^4$ A W$^{-1}$), specific detectivity (2.5 x 10$^{14}$ Jones) and external quantum efficiency (1.8 x 10$^7$%) when $V_{\textrm {ds}}$ = 3 V, $λ$ = 515 nm and $P$ = 0.01 mW cm$^{-2}$. The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trap** states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials.
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Submitted 4 May, 2022;
originally announced May 2022.
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Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8
Authors:
W. L. Zhen,
W. T. Miao,
W. L. Zhu,
C. J. Zhang,
W. K. Zhu
Abstract:
In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 * 10^7 Jones) and comparably short respo…
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In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 * 10^7 Jones) and comparably short response time (τ_rise = 433 ms, τ_decay = 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8 makes it even more important in future electronic and optoelectronic applications.
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Submitted 2 April, 2022;
originally announced April 2022.
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Materials and possible mechanisms of extremely large magnetoresistance: A review
Authors:
Rui Niu,
W. K. Zhu
Abstract:
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional…
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Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 103-108% and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron-hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: ...
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Submitted 20 October, 2021;
originally announced October 2021.
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Observation of charge density wave transition in TaSe3 mesowires
Authors:
J. Yang,
Y. Q. Wang,
R. R. Zhang,
L. Ma,
W. Liu,
Z. Qu,
L. Zhang,
S. L. Zhang,
W. Tong,
L. Pi,
W. K. Zhu,
C. J. Zhang
Abstract:
The quasi-one-dimensional (quasi-1D) TaSe3 attracts considerable attention for its intriguing superconductivity and possible interplay with nontrivial topology and charge density wave (CDW) state. However, unlike the isostructural analogues, CDW has not been observed for TaSe3 despite its quasi-1D character that is supposed to promote Peierls instabilities and CDW. Here we synthesize TaSe3 mesowir…
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The quasi-one-dimensional (quasi-1D) TaSe3 attracts considerable attention for its intriguing superconductivity and possible interplay with nontrivial topology and charge density wave (CDW) state. However, unlike the isostructural analogues, CDW has not been observed for TaSe3 despite its quasi-1D character that is supposed to promote Peierls instabilities and CDW. Here we synthesize TaSe3 mesowires (MWs) using a one-step approach. For the MW of ~300 nm thick, a distinct CDW transition occurs at 65 K in the resistivity measurement, which has not been reported before and is further evidenced by the Raman characterization and susceptibility measurement. For comparison, we have also prepared bulk single crystal TaSe3. Although no anomaly appears in the resistivity and magnetoresistance measurements, the carrier type detected by Hall effect varies from n-type to p-type below 50 K, suggesting a reconstruction of Fermi surface that could be associated with CDW. The enhancement of CDW in the MWs is attributed to the reduced dimensionality. TaSe3 is demonstrated to be a promising platform to study the correlation and competition of CDW and superconductivity in the quasi-1D systems.
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Submitted 22 June, 2019;
originally announced June 2019.
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Origin of planar Hall effect in type-II Weyl semimetal MoTe2
Authors:
D. D. Liang,
Y. J. Wang,
W. L. Zhen,
J. Yang,
S. R. Weng,
X. Yan,
Y. Y. Han,
W. Tong,
L. Pi,
W. K. Zhu,
C. J. Zhang
Abstract:
Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in various systems are not fully distinguished and understood. Here we perform a systematic study on the PHE and anisotropic MR (AMR) of Td-MoTe2, a type-II WSM. Altho…
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Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in various systems are not fully distinguished and understood. Here we perform a systematic study on the PHE and anisotropic MR (AMR) of Td-MoTe2, a type-II WSM. Although the PHE and AMR curves can be well fitted by the theoretical formulas, we demonstrate that the anisotropic resistivity arises from the orbital MR (OMR), instead of the negative MR as expected in the chiral anomaly effect. In contrast, the absence of negative MR indicates that the large OMR dominates over the chiral anomaly effect. This explains why it is difficult to measure negative MR in type-II WSMs. We argue that the measured PHE can be related with the chiral anomaly only when the negative MR is simultaneously observed.
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Submitted 4 September, 2018;
originally announced September 2018.
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Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility
Authors:
J. Yang,
W. L. Zhen,
D. D. Liang,
Y. J. Wang,
X. Yan,
S. R. Weng,
J. R. Wang,
W. Tong,
L. Pi,
W. K. Zhu,
C. J. Zhang
Abstract:
A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current) far exceeds the zero-field resistivity, which thus rules out the possible origin of negative longitudinal magnetoresistance. The giant PHE/AMR is finally attri…
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A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current) far exceeds the zero-field resistivity, which thus rules out the possible origin of negative longitudinal magnetoresistance. The giant PHE/AMR is finally attributed to the large anisotropic orbital magnetoresistance that stems from the ultrahigh mobility. Furthermore, the mobility-enhanced current jetting effects are found to strongly deform the line shape of the curves, and their evolution with the changing magnetic field and temperature is also studied. Although the giant PHE/AMR suggests promising applications in spintronics, the enhanced current jetting shows the other side of the coin, which needs to be considered in the future device design.
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Submitted 14 January, 2019; v1 submitted 17 July, 2018;
originally announced July 2018.
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Extreme magnetoresistance and Shubnikov-de Haas oscillations in ferromagnetic DySb
Authors:
D. D. Liang,
Y. J. Wang,
C. Y. Xi,
W. L. Zhen,
J. Yang,
L. Pi,
W. K. Zhu,
C. J. Zhang
Abstract:
The electronic structures of a representative rare earth monopnictide (i.e., DySb) under high magnetic field (i.e., in the ferromagnetic state) are studied from both experimental and theoretical aspects. A non-saturated extremely large positive magnetoresistance (XMR) is observed (as large as 3.7*10^4% at 1.8 K and 38.7 T), along with the Shubnikov-de Haas oscillations that are well reproduced by…
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The electronic structures of a representative rare earth monopnictide (i.e., DySb) under high magnetic field (i.e., in the ferromagnetic state) are studied from both experimental and theoretical aspects. A non-saturated extremely large positive magnetoresistance (XMR) is observed (as large as 3.7*10^4% at 1.8 K and 38.7 T), along with the Shubnikov-de Haas oscillations that are well reproduced by our first principles calculations. Three possible origins of XMR are examined. Although a band inversion is found theoretically, suggesting that DySb might be topologically nontrivial, it is deeply underneath the Fermi level, which rules out a topological nature of the XMR. The total densities of electron-like and hole-like carriers are not fully compensated, showing that compensation is unlikely to account for the XMR. The XMR is eventually understood in terms of high mobility that is associated with the steep linear bands. This discovery is important to the intensive studies on the XMR of rare earth monopnictides.
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Submitted 26 August, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
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Frustration induced non-Curie-Weiss paramagnetism in La3Ir3O11: a fractional-valence-state iridate
Authors:
J. Yang,
J. R. Wang,
W. L. Zhen,
L. Ma,
L. S. Ling,
W. Tong,
C. J. Zhang,
L. Pi,
W. K. Zhu
Abstract:
Experimental and theoretical studies are performed on La3Ir3O11, an iridate hosting a +4.33 fractional valence state for Ir ions and a three-dimensional frustrated structure composed of edge-shared Ir2O10 dimers. These features are expected to enhance inter-site hop**s and reduce magnetic moments of Ir ions. However, a spin-orbit driven Mott insulating transport is observed, which is supported b…
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Experimental and theoretical studies are performed on La3Ir3O11, an iridate hosting a +4.33 fractional valence state for Ir ions and a three-dimensional frustrated structure composed of edge-shared Ir2O10 dimers. These features are expected to enhance inter-site hop**s and reduce magnetic moments of Ir ions. However, a spin-orbit driven Mott insulating transport is observed, which is supported by our first principles calculations. Most importantly, geometrical frustration and competing interactions result in a non-Curie-Weiss paramagnetic ground state, revealing no magnetic order down to 2 K. This unusual state is further demonstrated by a theoretical modeling process, suggesting a possible candidate for the spin liquid state.
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Submitted 25 October, 2019; v1 submitted 20 March, 2018;
originally announced March 2018.
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Planar Hall effect in type-II Weyl semimetal WTe2
Authors:
Y. J. Wang,
J. X. Gong,
D. D. Liang,
M. Ge,
J. R. Wang,
W. K. Zhu,
C. J. Zhang
Abstract:
Adler-Bell-Jackiw chiral anomaly is a representative feature arising from the topological nature in topological semimetal. We report the first experimental observation of giant planar Hall effect in type-II Weyl semimetal WTe2. Our comprehensive analyes of the experimental data demonstrate that the detected planar Hall effect is originated from the chiral anomaly of Weyl fermions. Unlike the somew…
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Adler-Bell-Jackiw chiral anomaly is a representative feature arising from the topological nature in topological semimetal. We report the first experimental observation of giant planar Hall effect in type-II Weyl semimetal WTe2. Our comprehensive analyes of the experimental data demonstrate that the detected planar Hall effect is originated from the chiral anomaly of Weyl fermions. Unlike the somewhat elusive negative magnetoresistance, the planar Hall effect is robust and easy to be detected in type-II Weyl semimetal. This work reveals that the planar Hall effect is an effective transport probe to determine the topological nature of topological semimetals, especially in type-II Weyl semimetals.
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Submitted 21 January, 2018; v1 submitted 17 January, 2018;
originally announced January 2018.
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Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2
Authors:
J. X. Gong,
J. Yang,
M. Ge,
Y. J. Wang,
D. D. Liang,
L. Luo,
X. Yan,
W. L. Zhen,
S. R. Weng,
L. Pi,
C. J. Zhang,
W. K. Zhu
Abstract:
Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resi…
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Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron do** which not only breaks the balance between electron-type and hole-type carrier densities but also reduces the average carrier mobility. Thus, compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.
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Submitted 29 April, 2018; v1 submitted 29 December, 2017;
originally announced December 2017.
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Robust pinning of magnetic moments in pyrochlore iridates
Authors:
W. C. Yang,
W. K. Zhu,
H. D. Zhou,
L. Ling,
E. S. Choi,
M. Lee,
Y. Losovyj,
Chi-Ken Lu,
S. X. Zhang
Abstract:
Pyrochlore iridates A2Ir2O7 (A = rare earth elements, Y or Bi) hold great promise for realizing novel electronic and magnetic states owing to the interplay of spin-orbit coupling, electron correlation and geometrical frustration. A prominent example is the formation of all-in/all-out (AIAO)antiferromagnetic order in the Ir4+ sublattice that comprises of corner-sharing tetrahedra. Here we report on…
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Pyrochlore iridates A2Ir2O7 (A = rare earth elements, Y or Bi) hold great promise for realizing novel electronic and magnetic states owing to the interplay of spin-orbit coupling, electron correlation and geometrical frustration. A prominent example is the formation of all-in/all-out (AIAO)antiferromagnetic order in the Ir4+ sublattice that comprises of corner-sharing tetrahedra. Here we report on an unusual magnetic phenomenon, namely a cooling-field induced shift of magnetic hysteresis loop along magnetization axis, and its possible origin in pyrochlore iridates with non-magnetic Ir defects (e.g. Ir3+). In a simple model, we attribute the magnetic hysteresis loop to the formation of ferromagnetic droplets in the AIAO antiferromagnetic background. The weak ferromagnetism originates from canted antiferromagnetic order of the Ir4+ moments surrounding each non-magnetic Ir defect. The shift of hysteresis loop can be understood quantitatively based on an exchange-bias like effect in which the moments at the shell of the FM droplets are pinned by the AIAO AFM background via mainly the Heisenberg (J) and Dzyaloshinsky-Moriya (D) interactions. The magnetic pinning is stable and robust against the swee** cycle and swee** field up to 35 T, which is possibly related to the magnetic octupolar nature of the AIAO order.
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Submitted 30 August, 2017; v1 submitted 2 May, 2017;
originally announced May 2017.
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Topological semimetal state and field-induced Fermi surface reconstruction in antiferromagnetic monopnictide NdSb
Authors:
Yongjian Wang,
J. H. Yu,
Y. Q. Wang,
C. Y. Xi,
L. S. Ling,
S. L. Zhang,
J. R. Wang,
Y. M. Xiong,
Tao Han,
Hui Han,
Jun Yang,
Jixiang Gong,
Lei Luo,
W. Tong,
Lei Zhang,
Zhe Qu,
Y. Y. Han,
W. K. Zhu,
Li Pi,
X. G. Wan,
Chang** Zhang,
Yuheng Zhang
Abstract:
We report the experimental realization of Dirac semimetal state in NdSb, a material with antiferromagnetic ground state. The occurrence of topological semimetal state has been well supported by our band structure calculations and the experimental observation of chiral anomaly induced negative magnetoresistance. A field-induced Fermi surface reconstruction is observed, in response to the change of…
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We report the experimental realization of Dirac semimetal state in NdSb, a material with antiferromagnetic ground state. The occurrence of topological semimetal state has been well supported by our band structure calculations and the experimental observation of chiral anomaly induced negative magnetoresistance. A field-induced Fermi surface reconstruction is observed, in response to the change of spin polarization. The observation of topological semimetal state in a magnetic material provides an opportunity to investigate the magneto-topological phenomena.
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Submitted 15 March, 2018; v1 submitted 26 February, 2017;
originally announced February 2017.
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Magnetic order and spin-orbit coupled Mott state in double perovskite (La$_{1-x}$Sr$_x$)$_2$CuIrO$_6$
Authors:
W. K. Zhu,
J. -C. Tung,
W. Tong,
L. Ling,
M. Starr,
J. M. Wang,
W. C. Yang,
Y. Losovyj,
H. D. Zhou,
Y. Q. Wang,
P. -H. Lee,
Y. -K. Wang,
Chi-Ken Lu,
S. X. Zhang
Abstract:
Double-perovskite oxides that contain both 3d and 5d transition metal elements have attracted growing interest as they provide a model system to study the interplay of strong electron interaction and large spin-orbit coupling (SOC). Here, we report on experimental and theoretical studies of the magnetic and electronic properties of double-perovskites (La$_{1-x}$Sr$_x$)$_2$CuIrO$_6$ ($x$ = 0.0, 0.1…
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Double-perovskite oxides that contain both 3d and 5d transition metal elements have attracted growing interest as they provide a model system to study the interplay of strong electron interaction and large spin-orbit coupling (SOC). Here, we report on experimental and theoretical studies of the magnetic and electronic properties of double-perovskites (La$_{1-x}$Sr$_x$)$_2$CuIrO$_6$ ($x$ = 0.0, 0.1, 0.2, and 0.3). The undoped La$_2$CuIrO$_6$ undergoes a magnetic phase transition from paramagnetism to antiferromagnetism at T$_N$ $\sim$ 74 K and exhibits a weak ferromagnetic behavior below $T_C$ $\sim$ 52 K. Two-dimensional magnetism that was observed in many other Cu-based double-perovskites is absent in our samples, which may be due to the existence of weak Cu-Ir exchange interaction. First-principle density-functional theory (DFT) calculations show canted antiferromagnetic (AFM) order in both Cu$^{2+}$ and Ir$^{4+}$ sublattices, which gives rise to weak ferromagnetism. Electronic structure calculations suggest that La$_2$CuIrO$_6$ is an SOC-driven Mott insulator with an energy gap of $\sim$ 0.3 eV. Sr-do** decreases the magnetic ordering temperatures ($T_N$ and $T_C$) and suppresses the electrical resistivity. The high temperatures resistivity can be fitted using a variable-range-hop** model, consistent with the existence of disorders in these double-pervoskite compounds.
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Submitted 31 August, 2016; v1 submitted 27 August, 2016;
originally announced August 2016.
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Enhanced weak ferromagnetism and conductivity in hole-doped pyrochlore iridate Y2Ir2O7
Authors:
W. K. Zhu,
M. Wang,
B. Seradjeh,
Fengyuan Yang,
S. X. Zhang
Abstract:
Pyrochlore iridates have recently attracted growing interest in condensed matter physics because of their potential for realizing new topological states. In order to achieve such quantum states, it is essential to understand themagnetic properties of these compounds, as their electronic structures are strongly coupled with theirmagnetic ground states. In this work, we report a systematic study of…
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Pyrochlore iridates have recently attracted growing interest in condensed matter physics because of their potential for realizing new topological states. In order to achieve such quantum states, it is essential to understand themagnetic properties of these compounds, as their electronic structures are strongly coupled with theirmagnetic ground states. In this work, we report a systematic study of the magnetic properties of pyrochlore Y2Ir2O7 and its hole-doped compounds by performing magnetic, electron spin resonance, electrical transport, and x-ray photoelectron spectroscopy (XPS) measurements. We demonstrate the existence of weak ferromagnetism on top of a large antiferromagnetic background in the undoped compound. Hole do** by calcium was found to enhance both the ferromagnetism and the electrical conductivity. The XPS characterization shows the coexistence of Ir4+ and Ir5+ in the undoped compound, and the amount of Ir5+ increases with Ca do**, which highlights the possible origins of the weak ferromagnetism associated with the formation of Ir5+.We also observe a vertical shift in the M-H curves after field cooling, which may arise from a strong coupling between the ferromagnetic phase and the antiferromagnetic background.
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Submitted 3 January, 2015;
originally announced January 2015.
