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Showing 1–2 of 2 results for author: Zhou, H A

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  1. Antidam** torque-induced switching in biaxial antiferromagnetic insulators

    Authors: X. Z. Chen, R. Zarzuela, J. Zhang, C. Song, X. F. Zhou, G. Y. Shi, F. Li, H. A. Zhou, W. J. Jiang, F. Pan, Y. Tserkovnyak

    Abstract: We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 10^7 A/cm^2. The order-parameter switching is ascribed to the antiferromagnetic d… ▽ More

    Submitted 15 April, 2018; originally announced April 2018.

    Comments: 6 pages, 4 figures,accepted by Phys. Rev. Lett

  2. arXiv:1508.00352  [pdf, ps, other

    cond-mat.mtrl-sci

    Spin orbit coupling controlled spin pum** effect

    Authors: L. Ma, H. A. Zhou, L. Wang, X. L. Fan, W. J. Fan, D. S. Xue, K. Xia, G. Y. Guo, S. M. Zhou

    Abstract: Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, spin Hall conductivity (SHC) and spin diffusion length (SDL) in the NM layer govern the functionality and performance of pure spin current devices with spin pum** technique. We show that all three parameters can be tuned significantly by the spin orbit coupling (SOC) strength of the NM layer in syst… ▽ More

    Submitted 17 September, 2015; v1 submitted 3 August, 2015; originally announced August 2015.

    Comments: 16 pages, 4 figures