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Spin Dynamics in the Second Subband of a Quasi Two Dimensional System Studied in a Single Barrier Heterostructure by Time Resolved Kerr Rotation
Authors:
F. Zhang,
H. Z. Zheng,
Y. Ji,
J. Liu,
G. R. Li
Abstract:
By biasing a single barrier heterostructure with a 500nm-thick GaAs layer as the absorption layer, the spin dynamics for both of the first and second subband near the AlAs barrier are examined. We find that when simultaneously scanning the photon energy of both the probe and pump beams, a sign reversal of the Kerr rotation (KR) takes place as long as the probe photons break away the first subban…
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By biasing a single barrier heterostructure with a 500nm-thick GaAs layer as the absorption layer, the spin dynamics for both of the first and second subband near the AlAs barrier are examined. We find that when simultaneously scanning the photon energy of both the probe and pump beams, a sign reversal of the Kerr rotation (KR) takes place as long as the probe photons break away the first subband and probe the second subband. This novel feature, while stemming from the exchange interaction, has been used to unambiguously distinguish the different spin dynamics ($T_2^{1*}$ and $T_2^{2*}$) for the first and second subbands under the different conditions by their KR signs (negative for $1^{st}$ and positive for $2^{nd}$). In the zero magnetic field, by scanning the wavelength towards the short wavelength, $T_2^{1*}$ decreases in accordance with the D'yakonov-Perel' (DP) spin decoherence mechanism. At 803nm, $T_2^{2*}$(450ps) becomes ten times longer than $T_2^{1*}$(50ps). However, the value of $T_2^{2*}$ at 803nm is roughly the same as the value of $T_2^{1*}$ at 815nm. A new feature has been disclosed at the wavelength of 811nm under the bias of -0.3V (807nm under the bias of -0.6V) that the spin coherence times ($T_2^{1*}$ and $T_2^{2*}$) and the effective $g^*$ factors ($|g^*(E1)|$ and $|g^*(E2)|$) all display a sudden change, due to the "resonant" spin exchange coupling between two spin opposite bands.
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Submitted 25 March, 2008;
originally announced March 2008.
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Electrical Control of Dynamic Spin Splitting Induced by Exchange Interaction as Revealed by Time Resolved Kerr Rotation in a Degenerate Spin-Polarized Electron Gas
Authors:
F. Zhang,
H. Z. Zheng,
Y. Ji,
J. Liu,
G. R. Li
Abstract:
The manipulation of spin degree of freedom have been demonstrated in spin polarized electron plasma in a heterostructure by using exchange-interaction induced dynamic spin splitting rather than the Rashba and Dresselhaus types, as revealed by time resolved Kerr rotation. The measured spin splitting increases from 0.256meV to 0.559meV as the bias varies from -0.3V to -0.6V. Both the sign switch o…
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The manipulation of spin degree of freedom have been demonstrated in spin polarized electron plasma in a heterostructure by using exchange-interaction induced dynamic spin splitting rather than the Rashba and Dresselhaus types, as revealed by time resolved Kerr rotation. The measured spin splitting increases from 0.256meV to 0.559meV as the bias varies from -0.3V to -0.6V. Both the sign switch of Kerr signal and the phase reversal of Larmor precessions have been observed with biases, which all fit into the framework of exchange-interaction-induced spin splitting. The electrical control of it may provide a new effective scheme for manipulating spin-selected transport in spin FET-like devices.
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Submitted 25 March, 2008; v1 submitted 4 November, 2007;
originally announced November 2007.
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Evidence for the intrinsic ferromagnetism of semiconductor (Ga,Cr)As revealed by magnetic circular dichroism
Authors:
H. D. Gan,
H. Z. Zheng,
J. F. Bi,
Y. Ji,
B. Q. Sun,
G. R. Li,
X. Z. Ruan,
J. Lu,
J. H. Zhao
Abstract:
To clarify whether or not (Ga,Cr)As is an intrinsic diluted magnetic semiconductor, a systematic study of the magnetic circular dichroism (MCD) was carried out for a series of (Ga,Cr)As epilayers grown by the low-temperature molecular-beam epitaxy technique. The present work provides unambiguous evidence for the intrinsic ferromagnetism of the (Ga,Cr)As epilayers with all the necessary propertie…
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To clarify whether or not (Ga,Cr)As is an intrinsic diluted magnetic semiconductor, a systematic study of the magnetic circular dichroism (MCD) was carried out for a series of (Ga,Cr)As epilayers grown by the low-temperature molecular-beam epitaxy technique. The present work provides unambiguous evidence for the intrinsic ferromagnetism of the (Ga,Cr)As epilayers with all the necessary properties in accordance with that of a diluted magnetic semiconductor, especially the hysteresis characteristics, which is opened up in the magnetic field dependence of MCD.
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Submitted 1 November, 2007;
originally announced November 2007.
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Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport
Authors:
W. Yang,
Kai Chang,
X. G. Wu,
H. Z. Zheng,
F. M. Peeters
Abstract:
We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is fou…
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We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)].
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Submitted 21 September, 2006;
originally announced September 2006.
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Spin-polarized transport in a lateral two-dimensional diluted magnetic semiconductor electron gas
Authors:
W. Yang,
Kai Chang,
X. G. Wu,
H. Z. Zheng
Abstract:
The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction is highly spin-dependent even if the spin polarization of the carrier population is negligibly small. It turns out that this spin-polarized Fermi velocity al…
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The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction is highly spin-dependent even if the spin polarization of the carrier population is negligibly small. It turns out that this spin-polarized Fermi velocity alone can lead to a strong spin polarization of the current, which is still robust against the energy broadening effect induced by the impurity scattering.
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Submitted 23 September, 2005;
originally announced September 2005.
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Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells
Authors:
S. J. Xu,
S. -J. Xiong,
J. Liu,
H. Z. Zheng,
F. C. Zhang
Abstract:
We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is split in the presence of a magnetic field, characteristic of a Kondo resonance. The data is well explained as a resonant tunneling of conduction electrons at t…
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We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is split in the presence of a magnetic field, characteristic of a Kondo resonance. The data is well explained as a resonant tunneling of conduction electrons at the Fermi level through the doped silicon impurity states inside the wells by using an impurity Anderson model. The Coulomb blockade resonance of the impurity states induces a Fano dip above the Kondo resonance.
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Submitted 23 February, 2006; v1 submitted 28 January, 2005;
originally announced January 2005.
