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Proximity-induced nonlinear magnetoresistances on topological insulators
Authors:
M. Mehraeen,
Steven S. -L. Zhang
Abstract:
We employ quadratic-response Kubo formulas to investigate the nonlinear magnetotransport in bilayers composed of a topological insulator and a magnetic insulator, and predict both unidirectional magnetoresistance and nonlinear planar Hall effects driven by interfacial disorder and spin-orbit scattering. These effects exhibit strong dependencies on the Fermi energy relative to the strength of the e…
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We employ quadratic-response Kubo formulas to investigate the nonlinear magnetotransport in bilayers composed of a topological insulator and a magnetic insulator, and predict both unidirectional magnetoresistance and nonlinear planar Hall effects driven by interfacial disorder and spin-orbit scattering. These effects exhibit strong dependencies on the Fermi energy relative to the strength of the exchange interaction between the spins of Dirac electrons and the interfacial magnetization. In particular, as the Fermi energy becomes comparable to the exchange energy, the nonlinear magnetotransport coefficients can be greatly amplified and their dependencies on the magnetization orientation deviate significantly from conventional sinusoidal behavior. These findings may not only deepen our understanding of the origin of nonlinear magnetotransport in magnetic topological systems but also open new pathways to probe the Fermi and exchange energies via transport measurements.
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Submitted 8 December, 2023;
originally announced December 2023.
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Magnetoresistive detection of perpendicular switching in a magnetic insulator
Authors:
Silvia Damerio,
Achintya Sunil,
M. Mehraeen,
Steven S. -L. Zhang,
Can O. Avci
Abstract:
Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inhere…
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Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting its use in practical applications. Here, we demonstrate magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is a conducting ferrimagnet and serves as the reference layer, and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Technologically-feasible magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet is a breakthrough, as it opens broad avenues for novel insulating spintronic devices and concepts.
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Submitted 13 November, 2023;
originally announced November 2023.
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Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers
Authors:
Soho Shim,
M. Mehraeen,
Joseph Sklenar,
Junseok Oh,
Jonathan Gibbons,
Hilal Saglam,
Axel Hoffmann,
Steven S. -L. Zhang,
Nadya Mason
Abstract:
The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant effect on the electronic band structure. Among numerous electrical probes to read out such magnetic order, unidirectional magnetoresistance (UMR), where the resistan…
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The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant effect on the electronic band structure. Among numerous electrical probes to read out such magnetic order, unidirectional magnetoresistance (UMR), where the resistance changes under the reversal of the current direction, can provide rich insights into the transport properties of spin-orbit coupled systems. However, UMR has never been observed in antiferromagnets before, given the absence of intrinsic spin-dependent scattering. Here, we report a UMR in the antiferromagnetic phase of a FeRh$|$Pt bilayer, which undergoes a sign change and then increases strongly with an increasing external magnetic field, in contrast to UMRs in ferromagnetic and nonmagnetic systems. We show that Rashba spin-orbit coupling alone cannot explain the sizable UMR in the antiferromagnetic bilayer and that field-induced spin canting distorts the Fermi contours to greatly enhance the UMR by two orders of magnitude. Our results can motivate the growing field of antiferromagnetic spintronics, and suggest a route to the development of tunable antiferromagnet-based spintronics devices.
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Submitted 5 July, 2022;
originally announced July 2022.
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Spin anomalous-Hall unidirectional magnetoresistance
Authors:
M. Mehraeen,
Steven S. -L. Zhang
Abstract:
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic…
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We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic layer. Physically, it is the charge-spin conversion induced by the spin anomalous Hall effect that conspires with the structural inversion asymmetry to generate a net nonequilibrium spin density in the ferromagnetic layer, which, in turn, modulates the resistance of the bilayer when the direction of the applied current or the magnetization is reversed. The dependences of the spin AH-UMR effect on materials and geometric parameters are analyzed and compared with other nonlinear magnetoresistances. In particular, we show that, in magnetic bilayers where spin anomalous Hall and spin Hall effects are comparable, the overall UMR may undergo a sign change when the thickness of either layer is varied, suggesting a scheme to quantify the spin Hall or spin anomalous Hall angle via a nonlinear transport measurement.
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Submitted 24 May, 2022; v1 submitted 10 December, 2021;
originally announced December 2021.
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Tunable spin-charge conversion in class-I topological Dirac semimetals
Authors:
Rui-Hao Li,
Pengtao Shen,
Steven S. -L. Zhang
Abstract:
We theoretically demonstrate that class-I topological Dirac semimetals (TDSMs) can provide a platform for realizing both electrically and magnetically tunable spin-charge conversion. With time-reversal symmetry, the spin component along the uniaxial rotation axis ($z$-axis) is approximately conserved, which leads to an anisotropic spin Hall effect -- the resulting spin Hall current relies on the r…
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We theoretically demonstrate that class-I topological Dirac semimetals (TDSMs) can provide a platform for realizing both electrically and magnetically tunable spin-charge conversion. With time-reversal symmetry, the spin component along the uniaxial rotation axis ($z$-axis) is approximately conserved, which leads to an anisotropic spin Hall effect -- the resulting spin Hall current relies on the relative orientation between the external electric field and the $z$-axis. The application of a magnetic field, on the other hand, breaks time-reversal symmetry, driving the TDSM into a Weyl semimetal phase and, consequently, partially converting the spin current to a charge Hall current. Using the Kubo formulas, we numerically evaluate the spin and charge Hall conductivities based on a low-energy TDSM Hamiltonian together with the Zeeman coupling. Besides the conventional tensor element of the spin Hall conductivity $σ_{xy}^z$, we find that unconventional components, such as $σ_{xy}^x$ and $σ_{xy}^y$, also exist and vary as the magnetic field is rotated. Likewise, the charge Hall conductivity also exhibits appreciable tunability upon variation of the magnetic field. We show that such tunability -- as well as large spin-charge conversion efficiency -- arises from the interplay of symmetry and band topology of the TDSMs.
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Submitted 13 April, 2022; v1 submitted 22 October, 2021;
originally announced October 2021.
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Quantum unidirectional magnetoresistance
Authors:
M. Mehraeen,
Pengtao Shen,
Steven S. -L. Zhang
Abstract:
We predict unidirectional magnetoresistance effects arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric field is reversed or the magnetization of the ferromagnetic layer is rotated. In the presence of spin-orbit coupling, an electron wave incident on the interface of…
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We predict unidirectional magnetoresistance effects arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric field is reversed or the magnetization of the ferromagnetic layer is rotated. In the presence of spin-orbit coupling, an electron wave incident on the interface of the bilayer undergoes a spin rotation and a momentum-dependent phase shift. Quantum interference between the incident and reflected waves furnishes the electron with an additional velocity that is even in the in-plane component of the electron's wavevector, giving rise to quadratic magnetotransport that is rooted in the wave nature of electrons. The corresponding unidirectional magnetoresistances exhibit decay lengths at the scale of the Fermi wavelength$-$distinctive signatures of the quantum nonlinear magnetotransport effect.
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Submitted 26 June, 2023; v1 submitted 31 August, 2021;
originally announced August 2021.
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Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3
Authors:
Xiaoqian Zhang,
Siddhesh C. Ambhire,
Qiangsheng Lu,
Wei Niu,
Jacob Cook,
Jidong Samuel Jiang,
Deshun Hong,
Laith Alahmed,
Liang He,
Rong Zhang,
Yongbing Xu,
Steven S. -L. Zhang,
Peng Li,
Guang Bian
Abstract:
Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the strin…
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Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $μΩ\cdot$cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage.
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Submitted 23 August, 2021;
originally announced August 2021.
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Large Magneto-Electric Resistance in the Topological Dirac Semimetal alpha Sn
Authors:
Yuejie Zhang,
Vijaysankar Kalappattil,
Chuanpu Liu,
Steven S. -L. Zhang,
**jun Ding,
Uppalaiah Erugu,
Jifa Tian,
**ke Tang,
Mingzhong Wu
Abstract:
The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new approach for magnetic storage and magnetic field sensing applications. The effects demonstrated so far, however, are relatively weak or for low temperatures. St…
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The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new approach for magnetic storage and magnetic field sensing applications. The effects demonstrated so far, however, are relatively weak or for low temperatures. Strong room-temperature BMER effects have now been found in topological Dirac semimetal alpha-Sn thin films. The epitaxial alpha-Sn films were grown by sputtering on silicon substrates. They showed BMER responses that are 10^6 times larger than previously reported at room temperature and also larger than that previously reported at low temperatures. These results represent a major advance toward realistic BMER applications. The data also made possible the first characterization of the three-dimensional, Fermi-level spin texture of topological surface states in alpha-Sn.
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Submitted 7 July, 2021;
originally announced July 2021.
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Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator
Authors:
Peng Li,
**jun Ding,
Steven S. -L. Zhang,
James Kally,
Timothy Pillsbury,
Olle G. Heinonen,
Gaurab Rimal,
Chong Bi,
August DeMann,
Stuart B. Field,
Weigang Wang,
**ke Tang,
J. S. Jiang,
Axel Hoffmann,
Nitin Samarth,
Mingzhong Wu
Abstract:
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that ha…
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A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.
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Submitted 16 December, 2020;
originally announced December 2020.
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Voltage control of magnon spin currents in antiferromagnetic Cr2O3
Authors:
Changjiang Liu,
Yongming Luo,
Deshun Hong,
Steven S. -L. Zhang,
Brandon Fisher,
John E. Pearson,
J. Samuel Jiang,
Axel Hoffmann,
Anand Bhattacharya
Abstract:
Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic systems via the spin Seebeck effect (SSE). However, controlling such spin currents, only by electrical means, has been a fundamental challenge. Here, we investigat…
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Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic systems via the spin Seebeck effect (SSE). However, controlling such spin currents, only by electrical means, has been a fundamental challenge. Here, we investigate voltage control of the SSE in the antiferromagnetic insulator Cr2O3. We demonstrate that the SSE response generated in this material can be effectively controlled by applying a bias voltage, owing to the sensitivity of the SSE to the orientation of the magnetic sublattices as well as the existence of magnetoelectric couplings in Cr2O3. Our experimental results are explained using a model based on the magnetoelectric effect in Cr2O3.
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Submitted 24 July, 2020;
originally announced July 2020.
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Nonlinear Hall effect in Weyl semimetals induced by chiral anomaly
Authors:
Rui-Hao Li,
Olle G. Heinonen,
Anton A. Burkov,
Steven S. -L. Zhang
Abstract:
We predict a nonlinear Hall effect in certain Weyl semimetals with broken inversion symmetry. When the energy dispersions about pairs of Weyl nodes are skewed -- the Weyl cones are "tilted" -- the concerted actions of the anomalous velocity and the chiral anomaly give rise to the nonlinear Hall effect. This Hall conductivity is linear in both electric and magnetic fields, and depends critically on…
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We predict a nonlinear Hall effect in certain Weyl semimetals with broken inversion symmetry. When the energy dispersions about pairs of Weyl nodes are skewed -- the Weyl cones are "tilted" -- the concerted actions of the anomalous velocity and the chiral anomaly give rise to the nonlinear Hall effect. This Hall conductivity is linear in both electric and magnetic fields, and depends critically on the tilting of the Weyl cones. We also show that this effect does not rely on a finite Berry curvature dipole, in contrast to the intrinsic quantum nonlinear Hall effect that was recently observed in type-II Weyl semimetals.
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Submitted 16 January, 2021; v1 submitted 21 July, 2020;
originally announced July 2020.
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Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect
Authors:
Yongming Luo,
Changjiang Liu,
Hilal Saglam,
Yi Li,
Wei Zhang,
Steven S. -L. Zhang,
John E. Pearson,
Brandon Fisher,
Anand Bhattacharya,
Axel Hoffmann
Abstract:
Antiferromagnets are beneficial for future spintronic applications due to their zero magnetic moment and ultrafast dynamics. But gaining direct access to their antiferromagnetic order and identifying the properties of individual magnetic sublattices, especially in thin films and small-scale devices, remains a formidable challenge. So far, the existing read-out techniques such as anisotropic magnet…
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Antiferromagnets are beneficial for future spintronic applications due to their zero magnetic moment and ultrafast dynamics. But gaining direct access to their antiferromagnetic order and identifying the properties of individual magnetic sublattices, especially in thin films and small-scale devices, remains a formidable challenge. So far, the existing read-out techniques such as anisotropic magnetoresistance, tunneling anisotropic magnetoresistance, and spin-Hall magnetoresistance, are even functions of sublattice magnetization and thus allow us to detect different orientations of the Néel order for antiferromagnets with multiple easy axes. In contrast direct electrical detection of oppositely oriented spin states along the same easy axes (e.g., in uniaxial antiferromagnets) requires sensitivity to the direction of individual sublattices and thus is more difficult. In this study, using spin Seebeck effect, we report the electrical detection of the two sublattices in a uniaxial antiferromagnet Cr2O3. We find the rotational symmetry and hysteresis behavior of the spin Seebeck signals measured at the top and bottom surface reflect the dierction of the surface sublattice moments, but not the Néel order or the net moment in the bulk. Our results demonstrate the important role of interface spin sublattices in generating the spin Seebeck voltages, which provide a way to access each sublattice independently, enables us to track the full rotation of the magnetic sublattice, and distinguish different and antiparallel antiferromagnetic states in uniaxial antiferromagnets.
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Submitted 23 October, 2019;
originally announced October 2019.
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Nonlinear planar Hall effect
Authors:
Pan He,
Steven S. -L. Zhang,
Dapeng Zhu,
Shuyuan Shi,
Olle G. Heinonen,
Giovanni Vignale,
Hyunsoo Yang
Abstract:
An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offse…
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An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.
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Submitted 15 June, 2019;
originally announced June 2019.
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Spin-to-charge conversion in magnetic Weyl semimetals
Authors:
Steven S. -L. Zhang,
Anton A. Burkov,
Ivar Martin,
Olle G. Heinonen
Abstract:
Weyl semimetals (WSMs) are a newly discovered class of quantum materials which can host a number of exotic bulk transport properties, such as the chiral magnetic effect, negative magneto-resistance, and the anomalous Hall effect. In this work, we investigate theoretically the spin-to-charge conversion in a bilayer consisting of a magnetic WSM and a normal metal (NM), where a charge current can be…
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Weyl semimetals (WSMs) are a newly discovered class of quantum materials which can host a number of exotic bulk transport properties, such as the chiral magnetic effect, negative magneto-resistance, and the anomalous Hall effect. In this work, we investigate theoretically the spin-to-charge conversion in a bilayer consisting of a magnetic WSM and a normal metal (NM), where a charge current can be induced in the WSM by an spin current injection at the interface. We show that the induced charge current exhibits a peculiar anisotropy: it vanishes along the magnetization orientation of the magnetic WSM, regardless of the direction of the injected spin. This anisotropy originates from the unique band structure of magnetic WSMs and distinguishes the spin-to-charge conversion effect in WSM/NM structures from that observed in other systems, such as heterostructures involving heavy metals or topological insulators. The induced charge current depends strongly on injected spin orientation, as well as on the position of the Fermi level relative to the Weyl nodes and the separation between them. These dependencies provide additional means to control and manipulate spin-charge conversion in these topological materials.
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Submitted 15 April, 2019;
originally announced April 2019.
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Giant anisotropy of Gilbert dam** in epitaxial CoFe films
Authors:
Yi Li,
Fanlong Zeng,
Steven S. -L. Zhang,
Hyeondeok Shin,
Hilal Saglam,
Vedat Karakas,
Ozhan Ozatay,
John E. Pearson,
Olle G. Heinonen,
Yizheng Wu,
Axel Hoffmann,
Wei Zhang
Abstract:
Tailoring Gilbert dam** of metallic ferromagnetic thin films is one of the central interests in spintronics applications. Here we report a giant Gilbert dam** anisotropy in epitaxial Co$_{50}$Fe$_{50}$ thin film with a maximum-minimum dam** ratio of 400 \%, determined by broadband spin-torque as well as inductive ferromagnetic resonance. We conclude that the origin of this dam** anisotropy…
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Tailoring Gilbert dam** of metallic ferromagnetic thin films is one of the central interests in spintronics applications. Here we report a giant Gilbert dam** anisotropy in epitaxial Co$_{50}$Fe$_{50}$ thin film with a maximum-minimum dam** ratio of 400 \%, determined by broadband spin-torque as well as inductive ferromagnetic resonance. We conclude that the origin of this dam** anisotropy is the variation of the spin orbit coupling for different magnetization orientations in the cubic lattice, which is further corroborate from the magnitude of the anisotropic magnetoresistance in Co$_{50}$Fe$_{50}$.
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Submitted 7 January, 2019;
originally announced January 2019.
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Theory of bilinear magneto-electric resistance from topological-insulator surface states
Authors:
Steven S. -L. Zhang,
Giovanni Vignale
Abstract:
We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear magnetoresistance does not rely on a conducting ferromagnetic layer and scales linearly with both the applied electric and magnetic fields; for this reason, we…
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We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear magnetoresistance does not rely on a conducting ferromagnetic layer and scales linearly with both the applied electric and magnetic fields; for this reason, we name it bilinear magneto-electric resistance (BMER). We show that the sign and the magnitude of the BMER depends sensitively on the orientation of the current with respect to the magnetic field as well as the crystallographic axes -- a property that can be utilized to map out the spin texture of the topological surface states via simple transport measurement, alternative to the angle-resolved photoemission spectroscopy (ARPES).
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Submitted 20 August, 2018;
originally announced August 2018.
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Observation of out-of-plane spin texture in a SrTiO3 (111) two-dimensional electron gas
Authors:
Pan He,
S. McKeown Walker,
Steven S. -L. Zhang,
F. Y. Bruno,
M. S. Bahramy,
Jongmin Lee,
Rajagopalan Ramaswamy,
Kaiming Cai,
Olle Heinonen,
Giovanni Vignale,
F. Baumberger,
Hyunsoo Yang
Abstract:
We explore the second order bilinear magnetoelectric resistance (BMER) effect in the d-electron-based two-dimensional electron gas (2DEG) at the SrTiO3 (111) surface. We find an evidence of a spin-split band structure with the archetypal spin-momentum locking of the Rashba effect for the in-plane component. Under an out-of-plane magnetic field, we find a BMER signal that breaks the six-fold symmet…
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We explore the second order bilinear magnetoelectric resistance (BMER) effect in the d-electron-based two-dimensional electron gas (2DEG) at the SrTiO3 (111) surface. We find an evidence of a spin-split band structure with the archetypal spin-momentum locking of the Rashba effect for the in-plane component. Under an out-of-plane magnetic field, we find a BMER signal that breaks the six-fold symmetry of the electronic dispersion, which is a fingerprint for the presence of a momentum dependent out-of-plane spin component. Relativistic electronic structure calculations reproduce this spin-texture and indicate that the out-of-plane component is a ubiquitous property of oxide 2DEGs arising from strong crystal field effects. We further show that the BMER response of the SrTiO3 (111) 2DEG is tunable and unexpectedly large.
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Submitted 5 June, 2018;
originally announced June 2018.
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Chiral surface and edge plasmons in ferromagnetic conductors
Authors:
Steven S. -L. Zhang,
Giovanni Vignale
Abstract:
The recently introduced concept of "surface Berry plasmons" is studied in the concrete instance of a ferromagnetic conductor in which the Berry curvature, generated by spin-orbit (SO) interaction, has opposite signs for carriers parallel or antiparallel to the magnetization. By using collisionless hy- drodynamic equations with appropriate boundary conditions, we study both the surface plasmons of…
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The recently introduced concept of "surface Berry plasmons" is studied in the concrete instance of a ferromagnetic conductor in which the Berry curvature, generated by spin-orbit (SO) interaction, has opposite signs for carriers parallel or antiparallel to the magnetization. By using collisionless hy- drodynamic equations with appropriate boundary conditions, we study both the surface plasmons of a three-dimensional ferromagnetic conductor and the edge plasmons of a two-dimensional one. The anomalous velocity and the broken inversion symmetry at the surface or the edge of the conductor create a "handedness", whereby the plasmon frequency depends not only on the angle between the wave vector and the magnetization, but also on the direction of propagation along a given line. In particular, we find that the frequency of the edge plasmon depends on the direction of propagation along the edge. These Berry curvature effects are compared and contrasted with similar effects induced in the plasmon dispersion by an external magnetic field in the absence of Berry curvature. We argue that Berry curvature effects may be used to control the direction of propagation of the surface plasmons via coupling with the magnetization of ferromagnetic conductors, and thus create a link between plasmonics and spintronics.
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Submitted 20 April, 2018; v1 submitted 18 April, 2018;
originally announced April 2018.
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Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering
Authors:
Steven S. -L. Zhang,
Olle Heinonen
Abstract:
We study the topological Hall effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin diffusion equation is derived, which contains an additional source term associated with the gradient of the emergent magnetic field that arises, and its solution shows that spin accumulation may build up in the vicin…
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We study the topological Hall effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin diffusion equation is derived, which contains an additional source term associated with the gradient of the emergent magnetic field that arises, and its solution shows that spin accumulation may build up in the vicinity of the magnetic skyrmions. We show that the spin accumulation gives rise to a spin polarized diffusion current that in general suppresses that bulk topological Hall current. Only when the spin diffusion length is much smaller than the skyrmion size, the topological Hall resistivity approaches to the one originally derived by Bruno \textit{et al.} [Phys. Rev. Lett. \textbf{93}, 096806 (2004)]. We derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.
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Submitted 18 April, 2018; v1 submitted 26 January, 2018;
originally announced January 2018.
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Tailoring Magnetic Skyrmions by Geometric Confinement of Magnetic Structures
Authors:
Steven S. -L. Zhang,
C. Phatak,
A. K. Petford-Long,
O. G. Heinonen
Abstract:
Nanoscale magnetic skyrmions have interesting static and transport properties that make them candidates for future spintronic devices. Control and manipulation of the size and behavior of skyrmions is thus of crucial importance. Using a Ginzburg-Landau approach, we show theoretically that skyrmions and skyrmion lattices can be stabilized by a spatial modulation of the uniaxial magnetic anisotropy…
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Nanoscale magnetic skyrmions have interesting static and transport properties that make them candidates for future spintronic devices. Control and manipulation of the size and behavior of skyrmions is thus of crucial importance. Using a Ginzburg-Landau approach, we show theoretically that skyrmions and skyrmion lattices can be stabilized by a spatial modulation of the uniaxial magnetic anisotropy in a thin film of centro-symmetric ferromagnet. Remarkably, the skyrmion size is determined by the ratio of the exchange length and the period of the spatial modulation of the anisotropy, at variance with conventional skyrmions stabilized by dipolar and Dzyaloshinskii--Moriya interactions (DMIs).
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Submitted 20 September, 2017;
originally announced October 2017.
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Bilinear magneto-electric resistance as a probe of three-dimensional spin texture in topological surface states
Authors:
Pan He,
Steven S. -L. Zhang,
Dapeng Zhu,
Yang Liu,
Yi Wang,
Jiawei Yu,
Giovanni Vignale,
Hyunsoo Yang
Abstract:
Surface states of three-dimensional topological insulators exhibit the phenomenon of spin-momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, however the main technique available so far is the spin- and angle-resolved photoemission spectr…
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Surface states of three-dimensional topological insulators exhibit the phenomenon of spin-momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, however the main technique available so far is the spin- and angle-resolved photoemission spectroscopy. Here we reveal a close link between the spin texture and a new kind of magneto-resistance, which depends on the relative orientation of the current with respect to the magnetic field as well as the crystallographic axes, and scales linearly with both the applied electric and magnetic fields. This bilinear magneto-electric resistance can be used to map the spin texture of topological surface states by simple transport measurements. For a prototypical Bi2Se3 single layer, we can map both the in-plane and the out-of-plane components of the spin texture - the latter arising from hexagonal war**. Theoretical calculations suggest that the bilinear magneto-electric resistance originates from the conversion of a non-equilibrium spin current into a charge current under the application of the external magnetic field.
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Submitted 29 June, 2017;
originally announced June 2017.
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Tunable mode coupling in nano-contact spin torque oscillators
Authors:
Steven S. -L. Zhang,
Ezio Iacocca,
Olle Heinonen
Abstract:
Recent experiments on spin torque oscillators have revealed interactions between multiple magnetodynamic modes, including mode-coexistence, mode-hop**, and temperature-driven cross-over between modes. Initial multimode theory has indicated that a linear coupling between several dominant modes, arising from the interaction of the subdynamic system with a magnon bath, plays an essential role in th…
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Recent experiments on spin torque oscillators have revealed interactions between multiple magnetodynamic modes, including mode-coexistence, mode-hop**, and temperature-driven cross-over between modes. Initial multimode theory has indicated that a linear coupling between several dominant modes, arising from the interaction of the subdynamic system with a magnon bath, plays an essential role in the generation of various multimode behaviors, such as mode hop** and mode coexistence. In this work, we derive a set of rate equations to describe the dynamics of coupled magnetodynamic modes in a nano-contact spin torque oscillator. Expressions for both linear and nonlinear coupling terms are obtained, which allow us to analyze the dependence of the coupled dynamic behaviors of modes on external experimental conditions as well as intrinsic magnetic properties. For a minimal two-mode system, we further map the energy and phase difference of the two modes onto a two-dimensional phase space, and demonstrate in the phase portraits, how the manifolds of periodic orbits and fixed points vary with external magnetic field as well as with temperature.
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Submitted 29 June, 2017; v1 submitted 10 April, 2017;
originally announced April 2017.
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Theory of unidirectional spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers
Authors:
Steven S. -L. Zhang,
Giovanni Vignale
Abstract:
Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal (FM). A small change in the lon- gitudinal resistance of the bilayer has been observed when reversing the direction of either the applied in-plane current or the magnetization. We attribute such nonlinear transport behavior to the spin-polariz…
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Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal (FM). A small change in the lon- gitudinal resistance of the bilayer has been observed when reversing the direction of either the applied in-plane current or the magnetization. We attribute such nonlinear transport behavior to the spin-polarization dependence of the electron mobility in the FM layer acting in concert with the spin accumulation induced in that layer by the spin Hall current originating in the bulk of the HM layer. An explicit expression for the nonlinear magnetoresistance is derived based on a simple drift-diffusion model, which shows that the nonlinear magnetoresistance appears at the first order of spin Hall angle (SHA), and changes sign when the current is reversed, in agreement with the experimental observations. We also discuss possible ways to control the sign of the nonlinear magnetoresistance and to enhance the magnitude of effect.
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Submitted 18 October, 2016; v1 submitted 6 August, 2016;
originally announced August 2016.
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Nonlocal Anomalous Hall Effect
Authors:
Steven S. -L. Zhang,
Giovanni Vignale
Abstract:
The anomalous Hall effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also occurs in a nonmagnetic metal (Pt) in contact with a magnetic insulator (yttrium iron garnet (YIG)), even when precautions are taken to ensure there is no induced…
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The anomalous Hall effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also occurs in a nonmagnetic metal (Pt) in contact with a magnetic insulator (yttrium iron garnet (YIG)), even when precautions are taken to ensure there is no induced magnetization in the metal. We propose a theory of this effect based on the combined action of spin-dependent scattering from the magnetic interface and the spin Hall effect in the bulk of the metal. At variance with previous theories, we predict the effect to be of first order in the spin-orbit coupling, just as the conventional anomalous Hall effect -- the only difference being the spatial separation of the spin orbit interaction and the magnetization. For this reason we name this effect \textit{nonlocal anomalous Hall effect} and predict that its sign will be determined by the sign of the spin Hall angle in the metal. The AH conductivity that we calculate from our theory is in good agreement with the measured values in Pt/YIG structures.
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Submitted 13 December, 2015;
originally announced December 2015.
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Anisotropic magnetoresistance driven by surface spin orbit scattering
Authors:
Steven S. -L. Zhang,
Giovanni Vignale,
Shufeng Zhang
Abstract:
In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM), interfacial spin orbit scattering leads to spin mixing of the two conducting channels of the FM, which results in an unconventional anisotropic magnetoresistance (AMR). We theoretically investigate the magnetotransport in such bilayer structures by solving the spinor Boltzmann transport equation with generalized Fuchs-Sond…
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In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM), interfacial spin orbit scattering leads to spin mixing of the two conducting channels of the FM, which results in an unconventional anisotropic magnetoresistance (AMR). We theoretically investigate the magnetotransport in such bilayer structures by solving the spinor Boltzmann transport equation with generalized Fuchs-Sondheimer boundary condition that takes into account the effect of spin orbit scattering at the interface. We find that the new AMR exhibits a peculiar angular dependence which can serve as a genuine experimental signature. We also determine the dependence of the AMR on film thickness as well as spin polarization of the FM.
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Submitted 13 April, 2015;
originally announced April 2015.
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Spin convertance at magnetic interfaces
Authors:
Steven S. -L. Zhang,
Shufeng Zhang
Abstract:
The exchange interaction between the conduction electrons and magnetic moments at magnetic interface leads to mutual conversion between electron spin current and magnon current. We introduce a concept of spin convertance which quantitatively measures the magnon current induced by electron spin accumulation and the spin current created by magnon accumulation at the interface. We predict the phenome…
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The exchange interaction between the conduction electrons and magnetic moments at magnetic interface leads to mutual conversion between electron spin current and magnon current. We introduce a concept of spin convertance which quantitatively measures the magnon current induced by electron spin accumulation and the spin current created by magnon accumulation at the interface. We predict the phenomena on charge and spin drag across a magnetic insulator spacer for several layered structures.
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Submitted 3 December, 2012; v1 submitted 9 October, 2012;
originally announced October 2012.
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Magnon Mediated Electric Current Drag Across a Ferromagnetic Insulator Layer
Authors:
Steven S. -L. Zhang,
Shufeng Zhang
Abstract:
In a semiconductor hererostructure, the Coulomb interaction is responsible for the electric current drag between two 2D electron gases across an electron impenetrable insulator. For two metallic layers separated by a ferromagnetic insulator (FI) layer, the electric current drag can be mediated by a nonequilibrium magnon current of the FI. We determine the drag current by using the semiclassical Bo…
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In a semiconductor hererostructure, the Coulomb interaction is responsible for the electric current drag between two 2D electron gases across an electron impenetrable insulator. For two metallic layers separated by a ferromagnetic insulator (FI) layer, the electric current drag can be mediated by a nonequilibrium magnon current of the FI. We determine the drag current by using the semiclassical Boltzmann approach with proper boundary conditions of electrons and magnons at the metal-FI interface.
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Submitted 28 August, 2012;
originally announced August 2012.
