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Hierarchical Optimization of Metaheuristic Algorithms and Federated Learning for Enhanced Capacity Management and Load Balancing in HetNets
Authors:
Saimin Chen Zhang
Abstract:
This research introduces a revolutionary paradigm for HetNet management, presenting an innovative algorithmic framework that transcends traditional notions of network capacity enhancement. Our exploration delves into the intricate interplay among distinct components, weaving together metaheuristic algorithms, Neural Networks optimization, and Federated Learning approaches. The primary focus is on…
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This research introduces a revolutionary paradigm for HetNet management, presenting an innovative algorithmic framework that transcends traditional notions of network capacity enhancement. Our exploration delves into the intricate interplay among distinct components, weaving together metaheuristic algorithms, Neural Networks optimization, and Federated Learning approaches. The primary focus is on optimizing capacity in IoT-based heterogeneous networks while ensuring impeccable coverage and data reliability. Employing multi-layer optimization methods, we propose a dynamic model for optimal transmission strategy, strategically allocating replicas within cloud computing environments to curtail data access costs. Our algorithm not only discerns optimal data replication locations but also navigates the delicate balance between spectral efficiency and ergodic capacity in cellular IoT networks with small cells using on/off control. The orchestrated interplay between metaheuristic algorithms, Neural Networks optimization, and Federated Learning orchestrates resource reallocation, attaining an optimal balance between spectral efficiency, power utility, and ergodic capacity based on Quality of Service (QoS) requirements. Simulation results corroborate the efficacy of our approach, showcasing enhanced tradeoffs between spectral efficiency and total ergodic capacity with diminished outage probability compared to prevailing algorithms across diverse scenarios.
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Submitted 21 December, 2023;
originally announced December 2023.
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Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction
Authors:
M. R. Calvo,
F. de Juan,
R. Ilan,
E. J. Fox,
A. J. Bestwick,
M. Mühlbauer,
J. Wang,
C. Ames,
P. Leubner,
C. Brüne,
S. C. Zhang,
H. Buhmann,
L. W. Molenkamp,
D. Goldhaber-Gordon
Abstract:
We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives…
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We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero in the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.
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Submitted 13 December, 2017; v1 submitted 27 February, 2017;
originally announced February 2017.
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Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe
Authors:
C. Brüne,
C. X. Liu,
E. G. Novik,
E. M. Hankiewicz,
H. Buhmann,
Y. L. Chen,
X. L. Qi,
Z. X. Shen,
S. C. Zhang,
L. W. Molenkamp
Abstract:
We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a r…
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We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.
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Submitted 13 January, 2011;
originally announced January 2011.
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Pressure induced Superconductivity in Topological Compound Bi2Te3
Authors:
J. L. Zhang,
S. J. Zhang,
H. M. Weng,
W. Zhang,
L. X. Yang,
Q. Q. Liu,
S. M. Feng,
X. C. Wang,
R. C. Yu,
L. Z. Cao,
L. Wang,
W. G. Yang,
H. Z. Liu,
W. Y. Zhao,
S. C. Zhang,
X. Dai,
Z. Fang,
C. Q. **
Abstract:
Bi2Te3 compound has been theoretically predicted (1) to be a topological insulator, and its topologically non-trivial surface state with a single Dirac cone has been observed in photoemission experiments (2). Here we report that superconductivity (Tc^~3K) can be induced in Bi2Te3 as-grown single crystal (with hole-carriers) via pressure. The first-principles calculations show that the electronic s…
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Bi2Te3 compound has been theoretically predicted (1) to be a topological insulator, and its topologically non-trivial surface state with a single Dirac cone has been observed in photoemission experiments (2). Here we report that superconductivity (Tc^~3K) can be induced in Bi2Te3 as-grown single crystal (with hole-carriers) via pressure. The first-principles calculations show that the electronic structure under pressure remains to be topologically nontrivial, and the Dirac-type surface states can be well distinguished from bulk states at corresponding Fermi level. The proximity effect between superconducting bulk states and Dirac-type surface state could generate Majorana fermions on the surface. We also discuss the possibility that the bulk state could be a topological superconductor.
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Submitted 8 January, 2011; v1 submitted 20 September, 2010;
originally announced September 2010.
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Single valley Dirac fermions in zero-gap HgTe quantum wells
Authors:
B. Büttner,
C. X. Liu,
G. Tkachov,
E. G. Novik,
C. Brüne,
H. Buhmann,
E. M. Hankiewicz,
P. Recher,
B. Trauzettel,
S. C. Zhang,
L. W. Molenkamp
Abstract:
Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating b…
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Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating between the topologically trivial and the quantum spin Hall phases. At high magnetic fields, the quantized Hall plateaus demonstrate the presence of a single valley Dirac point in this system. In addition, we clearly observe the linear dispersion of the zero mode spin levels. Also the conductivity at the Dirac point and its temperature dependence can be understood from single valley Dirac fermion physics.
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Submitted 23 September, 2010; v1 submitted 12 September, 2010;
originally announced September 2010.
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Quantized Anomalous Hall Effect in Magnetic Topological Insulators
Authors:
Rui Yu,
Wei Zhang,
H. J. Zhang,
S. C. Zhang,
Xi Dai,
Zhong Fang
Abstract:
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin Hall effect have been discovered in recent years. However, the quantized anomalous Hall (QAH) effect has not yet been realized experimentally. In a QAH insula…
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The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin Hall effect have been discovered in recent years. However, the quantized anomalous Hall (QAH) effect has not yet been realized experimentally. In a QAH insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically non-trivial electronic structure, leading to the quantized Hall effect without any external magnetic field. In this work, based on state-of-art first principles calculations, we predict that the tetradymite semiconductors Bi$_2$Te$_3$, Bi$_2$Se$_3$, and Sb$_2$Te$_3$ form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in sharp contrast to conventional dilute magnetic semiconductor where free carriers are necessary to mediate the magnetic coupling. Magnetic order in two-dimensional thin films gives rise to a topological electronic structure characterized by a finite Chern number, with quantized Hall conductance $e^{2}/h$. Experimental realization of the long sought-after QAH insulator state could enable robust dissipationless charge transport at room temperature.
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Submitted 4 February, 2010;
originally announced February 2010.
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Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface
Authors:
Y. L. Chen,
J. G. Analytis,
J. H. Chu,
Z. K. Liu,
S. K. Mo,
X. L. Qi,
H. J. Zhang,
D. H. Lu,
X. Dai,
Z. Fang,
S. C. Zhang,
I. R. Fisher,
Z. Hussain,
Z. X. Shen
Abstract:
We investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $Γ$ point. Furthermore, with appropriate hole (Sn) do** to counteract intrinsic n-type do** from vacancy and an…
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We investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $Γ$ point. Furthermore, with appropriate hole (Sn) do** to counteract intrinsic n-type do** from vacancy and anti-site defects, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states, consistent with a carrier sign change near this do** in transport properties. Our experimental results establish for the first time that Bi$_2$Te$_3$ is a three dimensional topological insulator with a single Dirac cone on the surface, as predicted by a recent theory.
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Submitted 11 April, 2009;
originally announced April 2009.
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Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells
Authors:
W. Yang,
Kai Chang,
S. C. Zhang
Abstract:
Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted s…
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Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.
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Submitted 12 November, 2007;
originally announced November 2007.
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Holonomic Quantum Computing Based on the Stark Effect
Authors:
B. A. Bernevig,
S. C. Zhang
Abstract:
We propose a spin manipulation technique based entirely on electric fields applied to acceptor states in $p$-type semiconductors with spin-orbit coupling. While interesting in its own right, the technique can also be used to implement fault-resilient holonomic quantum computing. We explicitly compute adiabatic transformation matrix (holonomy) of the degenerate states and comment on the feasibili…
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We propose a spin manipulation technique based entirely on electric fields applied to acceptor states in $p$-type semiconductors with spin-orbit coupling. While interesting in its own right, the technique can also be used to implement fault-resilient holonomic quantum computing. We explicitly compute adiabatic transformation matrix (holonomy) of the degenerate states and comment on the feasibility of the scheme as an experimental technique.
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Submitted 22 February, 2004;
originally announced February 2004.
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The Eight Dimensional Quantum Hall Effect and the Octonions
Authors:
B. A. Bernevig,
J. P. Hu,
N. Toumbas,
S. C. Zhang
Abstract:
We construct a generalization of the quantum Hall effect where particles move in an eight dimensional space under an SO(8) gauge field. The underlying mathematics of this particle liquid is that of the last normed division algebra, the octonions. Two fundamentally different liquids with distinct configurations spaces can be constructed, depending on whether the particles carry spinor or vector S…
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We construct a generalization of the quantum Hall effect where particles move in an eight dimensional space under an SO(8) gauge field. The underlying mathematics of this particle liquid is that of the last normed division algebra, the octonions. Two fundamentally different liquids with distinct configurations spaces can be constructed, depending on whether the particles carry spinor or vector SO(8) quantum numbers. One of the liquids lives on a 20 dimensional manifold of with an internal component of SO(7) holonomy, whereas the second liquid lives on a 14 dimensional manifold with an internal component of $G_2$ holonomy.
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Submitted 2 June, 2003;
originally announced June 2003.
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Phase diagram and dynamics of the projected SO(5)-symmetric model of high-$T_c$ superconductivity
Authors:
A. Dorneich,
W. Hanke,
E. Arrigoni,
M. Troyer,
S. C. Zhang
Abstract:
We present numerical studies of a quantum ``projected'' SO(5) model which aims at a unifying description of antiferromagnetism and superconductivity in the high-T$_c$ cuprates, while properly taking into account the Mott insulating gap. Our numerical results, obtained by the Quantum Monte Carlo technique of Stochastic Series Expansion, show that this model can give a realistic description of the…
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We present numerical studies of a quantum ``projected'' SO(5) model which aims at a unifying description of antiferromagnetism and superconductivity in the high-T$_c$ cuprates, while properly taking into account the Mott insulating gap. Our numerical results, obtained by the Quantum Monte Carlo technique of Stochastic Series Expansion, show that this model can give a realistic description of the global phase diagram of the high-$T_c$ superconductors and accounts for many of their physical properties. Moreover, we address the question of dynamic restoring of the SO(5) symmetry at the critical point.
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Submitted 8 January, 2002; v1 submitted 22 June, 2001;
originally announced June 2001.
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Dynamical spin correlations in Heisenberg ladder under magnetic field and correlation functions in SO(5) ladder
Authors:
A. Furusaki,
S. C. Zhang
Abstract:
The zero-temperature dynamical spin-spin correlation functions are calculated for the spin-1/2 two-leg Heisenberg ladder in a magnetic field above the lower critical field Hc1. The dynamical structure factors are calculated which exhibit both massless and massive excitations. These modes appear in different sectors characterized by the parity in the rung direction and by the momentum in the dire…
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The zero-temperature dynamical spin-spin correlation functions are calculated for the spin-1/2 two-leg Heisenberg ladder in a magnetic field above the lower critical field Hc1. The dynamical structure factors are calculated which exhibit both massless and massive excitations. These modes appear in different sectors characterized by the parity in the rung direction and by the momentum in the direction of the chains. The structure factors have power-law singularities at the lower edges of their support. The results are also applicable to spin-1 Heisenberg chain. The implications are briefly discussed for various correlation functions and the pi-resonance in the SO(5) symmetric ladder model.
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Submitted 14 April, 1999; v1 submitted 28 July, 1998;
originally announced July 1998.
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From Antiferromagnetism to Superconductivity: Numerical Evidence for SO(5) Symmetry
Authors:
R. Eder,
W. Hanke,
S. C. Zhang
Abstract:
In this work, we present numerical results which support SO(5) symmetry as a concept unifying superconductivity and antiferromagnetism in the high-temperature superconductors. Using exact cluster diagonalization, we verify the recently proposed SO(5) multiplet structures for a widely used microscopic model, the t-J model. Our results show that the d-wave superconducting ground states away from h…
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In this work, we present numerical results which support SO(5) symmetry as a concept unifying superconductivity and antiferromagnetism in the high-temperature superconductors. Using exact cluster diagonalization, we verify the recently proposed SO(5) multiplet structures for a widely used microscopic model, the t-J model. Our results show that the d-wave superconducting ground states away from half-filling are obtained from the higher spin states at half-filling through SO(5) rotations, that the dominant low energy resonance in the dynamical spin correlation function corresponds to a `pi-resonance' in the entire low do** region, and that the SO(5) symmetry is robust against inclusion of longer ranged Coulomb repulsion and next-nearest neighbor hop**.
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Submitted 22 July, 1997;
originally announced July 1997.
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Search for the πResonance in Two Particle Tunneling Experiments of YBCO Superconductors
Authors:
Y. Bazaliy,
E. Demler,
S. C. Zhang
Abstract:
A recent theory of the resonant neutron scattering peaks in YBCO superconductors predicts the existence of a sharp spin triplet two particle collective mode (the ``πresonance") in the normal state. In this paper, we propose an experiment in which the πresonance could be probed directly in a two particle tunneling measurement.
A recent theory of the resonant neutron scattering peaks in YBCO superconductors predicts the existence of a sharp spin triplet two particle collective mode (the ``πresonance") in the normal state. In this paper, we propose an experiment in which the πresonance could be probed directly in a two particle tunneling measurement.
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Submitted 2 April, 1997;
originally announced April 1997.
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Universal Fluctuation of the Hall Conductance in the Random Magnetic Field
Authors:
K. Chaltikian,
L. Pryadko,
S. C. Zhang
Abstract:
We show that the RMS fluctuation of the antisymmetric part of the Hall conductance of a planar mesoscopic metal in a random magnetic field with zero average is universal, of the order of $e^2/h$, independent of the amplitude of the random magnetic field and the diffusion coefficient even in the weak field limit. This quantity is exactly zero in the case of ordinary scalar disorder. We propose an…
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We show that the RMS fluctuation of the antisymmetric part of the Hall conductance of a planar mesoscopic metal in a random magnetic field with zero average is universal, of the order of $e^2/h$, independent of the amplitude of the random magnetic field and the diffusion coefficient even in the weak field limit. This quantity is exactly zero in the case of ordinary scalar disorder. We propose an experiment to measure this surprising effect, and also discuss its implications on the localization physics of this system. Our result applies to some other systems with broken time-reversal ({\bf T}) symmetry.
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Submitted 25 January, 1995; v1 submitted 5 November, 1994;
originally announced November 1994.
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Electron Localization in a 2D System with Random Magnetic Flux
Authors:
D. Z. Liu,
X. C. Xie,
S. Das Sarma,
S. C. Zhang
Abstract:
Using a finite-size scaling method, we calculate the localization properties of a disordered two-dimensional electron system in the presence of a random magnetic field. Below a critical energy $E_c$ all states are localized and the localization length $ξ$ diverges when the Fermi energy approaches the critical energy, {\it i.e.} $ξ(E)\propto |E-E_c|^{-ν}$. We find that $E_c$ shifts with the stren…
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Using a finite-size scaling method, we calculate the localization properties of a disordered two-dimensional electron system in the presence of a random magnetic field. Below a critical energy $E_c$ all states are localized and the localization length $ξ$ diverges when the Fermi energy approaches the critical energy, {\it i.e.} $ξ(E)\propto |E-E_c|^{-ν}$. We find that $E_c$ shifts with the strength of the disorder and the amplitude of the random magnetic field while the critical exponent ($ν\approx 4.8$) remains unchanged indicating universality in this system. Implications on the experiment in half-filling fractional quantum Hall system are also discussed.
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Submitted 8 September, 1994;
originally announced September 1994.
