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Current-induced magnetization switching in CoTb amorphous single layer
Authors:
R. Q. Zhang,
L. Y. Liao,
X. Z. Chen,
T. Xu,
L. Cai,
M. H. Guo,
Hao Bai,
L. Sun,
F. H. Xue,
J. Su,
X. Wang,
C. H. Wan,
Hua Bai,
Y. X. Song,
R. Y. Chen,
N. Chen,
W. J. Jiang,
X. F. Kou,
J. W. Cai,
H. Q. Wu,
F. Pan,
C. Song
Abstract:
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant…
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We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.
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Submitted 18 June, 2020;
originally announced June 2020.
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Spin-orbit torque in completely compensated synthetic antiferromagnet
Authors:
P. X. Zhang,
L. Y. Liao,
G. Y. Shi,
R. Q. Zhang,
H. Q. Wu,
Y. Y. Wang,
F. Pan,
C. Song
Abstract:
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 O…
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Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 Oe. The magnetizations of two Co/Pd layers can be switched between two antiparallel states simultaneously by spin-orbit torque. The magnetization switching can be read out due to much stronger spin-orbit coupling at bottom Pt/[Co/Pd] interface compared to its upper counterpart without Pt. Both experimental and theoretical analyses unravel that the torque efficiency of antiferromagnetic coupled stacks is significantly higher than the ferromagnetic counterpart, making the critical switching current of SAF comparable to the conventional single ferromagnet. Besides adding an important dimension to spin-orbit torque, the efficient switching of completely compensated SAF might advance magnetic memory devices with high density, high speed and low power consumption.
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Submitted 28 May, 2018; v1 submitted 22 May, 2018;
originally announced May 2018.
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Instantaneous Control of Brownian Motion with a Positive Lead Time
Authors:
Zhen Xu,
Jiheng Zhang,
Rachel Q. Zhang
Abstract:
Consider a storage system where the content is driven by a Brownian motion absent control. At any time, one may increase or decrease the content at a cost proportional to the amount of adjustment. A decrease of the content takes effect immediately, while an increase is realized after a fixed lead time $\lt$. Holding costs are incurred continuously over time and are a convex function of the content…
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Consider a storage system where the content is driven by a Brownian motion absent control. At any time, one may increase or decrease the content at a cost proportional to the amount of adjustment. A decrease of the content takes effect immediately, while an increase is realized after a fixed lead time $\lt$. Holding costs are incurred continuously over time and are a convex function of the content. The objective is to find a control policy that minimizes the expected present value of the total costs. Due to the positive lead time for upward adjustments, one needs to keep track of all the outstanding upward adjustments as well as the actual content at time $t$ as there may also be downward adjustments during $[t,t+\lt)$, i.e., the state of the system is a function on $[0,\ell]$. To the best of our knowledge, this is the first paper to study instantaneous control of stochastic systems in such a functional setting. We first extend the concept of $L^\natural$-convexity to function spaces and establish the $L^\natural$-convexity of the optimal cost function. We then derive various properties of the cost function and identify the structure of the optimal policy as a state-dependent two-sided reflection map** making the minimum amount of adjustment necessary to keep the system states within a certain region.
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Submitted 4 August, 2016;
originally announced August 2016.
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Atomistic simulations of self-trapped exciton formation in silicon nanostructures: The transition from quantum dots to nanowires
Authors:
Y. Wang,
R. Q. Zhang,
Th. Frauenheim,
T. A. Niehaus
Abstract:
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in axial and radial directions is systematically investigated. Excited state relaxation leads to significant Stokes shifts for short nanorods with lengths less th…
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Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in axial and radial directions is systematically investigated. Excited state relaxation leads to significant Stokes shifts for short nanorods with lengths less than 2 nm, but has little effect on the luminescence intensity. The formation of self-trapped excitons is likewise observed for short nanostructures only; longer wires exhibit fully delocalized excitons with neglible geometrical distortion at the excited state minimum.
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Submitted 28 April, 2009; v1 submitted 17 March, 2009;
originally announced March 2009.
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Al doped graphene: A promising material for hydrogen storage at room temperature
Authors:
Z. M. Ao,
Q. Jiang,
R. Q. Zhang,
T. T. Tan,
S. Li
Abstract:
A promising material for hydrogen storage at room temperature-Al doped graphene was proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt% was predicted at T = 300 K and P = 0.1 Gpa with adsorption energy Eb = -0.260 eV/H2. This is close to the target of 6 wt% and satisfies the requirement of immobilization hydrogen with Eb of -0.2 ~ -0.4 eV/…
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A promising material for hydrogen storage at room temperature-Al doped graphene was proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt% was predicted at T = 300 K and P = 0.1 Gpa with adsorption energy Eb = -0.260 eV/H2. This is close to the target of 6 wt% and satisfies the requirement of immobilization hydrogen with Eb of -0.2 ~ -0.4 eV/H2 at ambient temperature and modest pressure for commercial applications specified by U.S. Department of Energy. It is believed that the doped Al varies the electronic structures of both C and H2. The bands of H2 overlap** with those of Al and C synchronously are the underlying mechanism of hydrogen storage capacity enhancement.
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Submitted 16 January, 2009; v1 submitted 12 November, 2008;
originally announced November 2008.
