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Deep Learning-Assisted Simultaneous Targets Sensing and Super-Resolution Imaging
Authors:
** Zhao,
Huang Zhao Zhang,
Ming-Zhe Chong,
Yue-Yi Zhang,
Zi-Wen Zhang,
Zong-Kun Zhang,
Chao-Hai Du,
Pu-Kun Liu
Abstract:
Recently, metasurfaces have experienced revolutionary growth in the sensing and superresolution imaging field, due to their enabling of subwavelength manipulation of electromagnetic waves. However, the addition of metasurfaces multiplies the complexity of retrieving target information from the detected fields. Besides, although the deep learning method affords a compelling platform for a series of…
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Recently, metasurfaces have experienced revolutionary growth in the sensing and superresolution imaging field, due to their enabling of subwavelength manipulation of electromagnetic waves. However, the addition of metasurfaces multiplies the complexity of retrieving target information from the detected fields. Besides, although the deep learning method affords a compelling platform for a series of electromagnetic problems, many studies mainly concentrate on resolving one single function and limit the research's versatility. In this study, a multifunctional deep neural network is demonstrated to reconstruct target information in a metasurface targets interactive system. Firstly, the interactive scenario is confirmed to tolerate the system noises in a primary verification experiment. Then, fed with the electric field distributions, the multitask deep neural network can not only sense the quantity and permittivity of targets but also generate superresolution images with high precision. The deep learning method provides another way to recover targets' diverse information in metasurface based target detection, accelerating the progression of target reconstruction areas. This methodology may also hold promise for inverse reconstruction or forward prediction problems in other electromagnetic scenarios.
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Submitted 2 May, 2023;
originally announced May 2023.
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Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer
Authors:
J. Wang,
L. S. Xie,
C. S. Wang,
H. Z. Zhang,
L. Shu,
J. Bai,
Y. S. Chai,
X. Zhao,
J. C. Nie,
C. B. Cao,
C. Z. Gu,
C. M. Xiong,
Y. Sun,
J. Shi,
S. Salahuddin,
K. Xia,
C. W. Nan,
J. X. Zhang
Abstract:
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108…
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A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108 A/cm2 inhibits the integration of those nanostructures with low-energy-cost technology. In addition, a precise determination of the location of domain walls at nanoscale seems difficult in artificially manufactured nanostructures. Here we report an approach to manipulate a single magnetic domain wall with a perpendicular anisotropy in a manganite/dielectric/metal capacitor using a probe-induced spin displacement. A spin angular momentum transfer torque occurs in the strongly correlated manganite film during the spin injection into the capacitor from the nanoscale magnetized tip with an ultralow voltage of 0.1 V, where the threshold spin-polarized current density is ~104 A/cm2 at the tip/manganite interface. The probe-voltage-controlled domain wall motion in the capacitor demonstrates a critical framework for the fundamental understanding of the manipulation of the nano-magnet systems with low energy consumption.
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Submitted 10 July, 2014;
originally announced July 2014.
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Two-dimensional structures of ferroelectric domain inversion in LiNbO3 by direct electron beam lithography
Authors:
J. He,
S. H. Tang,
Y. Q. Qin,
P. Dong,
H. Z. Zhang,
C. H. Kang,
W. X. Sun,
Z. X. Shen
Abstract:
We report on the fabrication of domain-reversed structures in LiNbO3 by means of direct electron beam lithography at room temperature without any static bias. The LiNbO3 crystals were chemically etched after the exposure of electron beam and then, the patterns of domain inversion were characterized by atomic force microscopy (AFM). In our experiment, an interesting phenomenon occurred when the e…
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We report on the fabrication of domain-reversed structures in LiNbO3 by means of direct electron beam lithography at room temperature without any static bias. The LiNbO3 crystals were chemically etched after the exposure of electron beam and then, the patterns of domain inversion were characterized by atomic force microscopy (AFM). In our experiment, an interesting phenomenon occurred when the electron beam wrote a one-dimensional (1-D) grating on the negative c-face: a two-dimensional (2-D) dotted array was observed on the positive c- face, which is significant for its potential to produce 2-D and three-dimensional photonic crystals. Furthermore, we also obtained 2-D ferroelectric domain inversion in the whole LiNbO3 crystal by writing the 2-D square pattern on the negative c-face. Such a structure may be utilized to fabricate 2-D nonlinear photonic crystal. AFM demonstrates that a 2-D domain-reversed structure has been achieved not only on the negative c-face of the crystal, but also across the whole thickness of the crystal.
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Submitted 28 July, 2005;
originally announced July 2005.
