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Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers
Authors:
Alan Kalitsov,
Pierre-Jean Zermatten,
Frédéric Bonell,
Gilles Gaudin,
Stéphane Andrieu,
Coriolan Tiusan,
Mairbek Chshiev,
Julian P. Velev
Abstract:
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O dep…
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The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) tunneling regime when the interface is modified with layers of a different insulator and (ii) resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different sign at positive and negative bias suggesting possibilities of combining memory with logic functions.
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Submitted 17 September, 2013;
originally announced September 2013.
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Spatially periodic domain wall pinning potentials: Asymmetric pinning and dipolar biasing
Authors:
P. J. Metaxas,
P. -J. Zermatten,
R. L. Novak,
S. Rohart,
J. -P. Jamet,
R. Weil,
J. Ferré,
A. Mougin,
R. L. Stamps,
G. Gaudin,
V. Baltz,
B. Rodmacq
Abstract:
Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of magnetically hard [Co/Pt]$_m$ nanoplatelets which are patterned above and are physically separated from…
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Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of magnetically hard [Co/Pt]$_m$ nanoplatelets which are patterned above and are physically separated from the continuous magnetic layer. The effect of the periodic pinning potentials on thermally activated domain wall creep dynamics is shown to be equivalent, at first approximation, to that of a uniform, effective retardation field, $H_{ret}$, which acts against the applied field, $H$. We show that $H_{ret}$ depends not only on the array geometry but also on the relative orientation of $H$ and the magnetization of the nanoplatelets. A result of the latter dependence is that wall-mediated hysteresis loops obtained for a set nanoplatelet magnetization exhibit many properties that are normally associated with ferromagnet/antiferromagnet exchange bias systems. These include a switchable bias, coercivity enhancement and domain wall roughness that is dependent on the applied field polarity.
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Submitted 28 April, 2013;
originally announced April 2013.
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The domain wall spin torque-meter
Authors:
I. M. Miron,
P. -J. Zermatten,
G. Gaudin,
S. Auffret,
B. Rodmacq,
A. Schuhl
Abstract:
We report the direct measurement of the non-adiabatic component of the spin-torque in domain walls. Our method is independent of both the pinning of the domain wall in the wire as well as of the Gilbert dam** parameter. We demonstrate that the ratio between the non-adiabatic and the adiabatic components can be as high as 1, and explain this high value by the importance of the spin-flip rate to…
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We report the direct measurement of the non-adiabatic component of the spin-torque in domain walls. Our method is independent of both the pinning of the domain wall in the wire as well as of the Gilbert dam** parameter. We demonstrate that the ratio between the non-adiabatic and the adiabatic components can be as high as 1, and explain this high value by the importance of the spin-flip rate to the non-adiabatic torque. Besides their fundamental significance these results open the way for applications by demonstrating a significant increase of the spin torque efficiency.
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Submitted 25 October, 2008;
originally announced October 2008.
