-
Ultra-High Lithium Storage Capacity of Al2C Monolayer under Restricted Multilayered Growth Mechanism
Authors:
Ning Lu,
Kai Wang,
Jiaxin Jiang,
Hongyan Guo,
Gui Zhong Zuo,
Zhiwen Zhuo,
Xiaojun Wu,
Xiao Cheng Zeng
Abstract:
Designing anode materials with high lithium specific capacity is crucial to the development of high energy-density lithium ion batteries. Herein, a distinctive lithium growth mechanism, namely, the restricted multilayered growth for lithium, and a strategy for lithium storage are proposed to achieve the balance between the ultra-high specific capacity and the need to avert uncontrolled dendritic g…
▽ More
Designing anode materials with high lithium specific capacity is crucial to the development of high energy-density lithium ion batteries. Herein, a distinctive lithium growth mechanism, namely, the restricted multilayered growth for lithium, and a strategy for lithium storage are proposed to achieve the balance between the ultra-high specific capacity and the need to avert uncontrolled dendritic growth of lithium. In particular, based on first-principles computation, we show that the Al2C monolayer with planar tetracoordinate carbon structure can be an ideal platform for realizing the restricted multilayered growth mechanism as a 2D anode material. Furthermore, the Al2C monolayer exhibits ultra-high specific capacity of lithium of 4059 mAh/g, yet with a low dif-fusion barrier of 0.039-0.17 eV as well as low open circuit voltage in the range of 0.002-0.34 V. These novel properties endow the Al2C monolayer a promising anode material for future lithium ion batteries. Our study offers a new way to design promising 2D anode materials with high specific capacity, fast lithium-ion diffusion, and safe lithium storage mechanism.
△ Less
Submitted 13 March, 2022;
originally announced March 2022.
-
Bulk and Two-dimensional Silver and Copper Monohalides: A Unique Class of Materials with Modest Ionicity/Covalency and Ferroelasticity/Multiferroicity
Authors:
Yaxin Gao,
Menghao Wu,
Xiao Cheng Zeng
Abstract:
Silver and copper monohalides can be viewed as a class of compounds in the neutral zone between predominantly covalent and ionic compounds, thereby exhibiting neither strong ionicity nor strong covalency. We show ab initio calculation evidence that silver and copper monohalides entail relatively low transition barriers between the non-polar rock-salt phase and the polar zinc-blende phase, due larg…
▽ More
Silver and copper monohalides can be viewed as a class of compounds in the neutral zone between predominantly covalent and ionic compounds, thereby exhibiting neither strong ionicity nor strong covalency. We show ab initio calculation evidence that silver and copper monohalides entail relatively low transition barriers between the non-polar rock-salt phase and the polar zinc-blende phase, due largely to their unique chemical nature of modest iconicity or covalency. Notably, the low transition barriers endow both monohalides with novel mechanical and electronic properties, i.e., coupled ferroelasticity and ferroelectricity with large polarizations and relatively low switching barriers at ambient conditions. Several halides even possess very similar lattice constants and structures as the prevailing semiconductors such as silicon, thereby enabling epitaxial growth on silicon. Moreover, based on extensive structural search, we find that the most stable two-dimensional (2D) polymorphs of the monolayer halides are close or even greater in energy than their bulk counterparts, a feature not usually seen in the family of rock-salt or zinc-blende semiconductors. The low transition barrier between zinc-blende phase and 2D phase is predicted. Moreover, several 2D monolayer halides also exhibit multiferroicity with coupled ferroelasticity or ferroelectricity, thereby rendering their potential applications as high-density integrated memories for efficient data reading and writing. Their surfaces, covered by halides, also provide oxidation resistance and give low cleave energy from layered structure, suggesting high likelihood of experimental synthesis of these 2D polymorphs.
△ Less
Submitted 11 December, 2019;
originally announced December 2019.
-
A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility
Authors:
Ning Lu,
Zhiwen Zhuo,
Hongyan Guo,
** Wu,
Wei Fa,
Xiaojun Wu,
Xiao Cheng Zeng
Abstract:
Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable t…
▽ More
Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable to that of monolayer phosphorene. More remarkably, contrary to the bilayer phosphorene which possesses dramatically reduced carrier mobility compared to its monolayer counterpart, CaP3 bilayer possesses even higher electron mobility (22380 cm2 V-1 s-1) than its monolayer counterpart. The bandgap of 2D CaP3 can be tuned over a wide range from 1.15 to 0.37 eV (HSE06 values) through controlling the number of stacked CaP3 layers. Besides novel electronic properties, 2D CaP3 also exhibits optical absorption over the entire visible-light range. The combined novel electronic, charge mobility, and optical properties render 2D CaP3 an exciting functional material for future nanoelectronic and optoelectronic applications.
△ Less
Submitted 1 March, 2018;
originally announced March 2018.
-
Record High Magnetic Anisotropy in Chemically Engineered Iridium Dimer
Authors:
Xiaoqing Liang,
Xue Wu,
Jun Hu,
Jijun Zhao,
Xiao Cheng Zeng
Abstract:
Exploring giant magnetic anisotropy in small magnetic nanostructures is of both fundamental interest and technological merit for information storage. To prevent spin flip** at room temperature due to thermal fluctuation, large magnetic anisotropy energy (MAE) over 50 meV in magnetic nanostructure is desired for practical applications. We chose one of the smallest magnetic nanostructures-Ir2 dime…
▽ More
Exploring giant magnetic anisotropy in small magnetic nanostructures is of both fundamental interest and technological merit for information storage. To prevent spin flip** at room temperature due to thermal fluctuation, large magnetic anisotropy energy (MAE) over 50 meV in magnetic nanostructure is desired for practical applications. We chose one of the smallest magnetic nanostructures-Ir2 dimer, to investigate its magnetic properties and explore possible approach to engineer the magnetic anisotropy. Through systematic first-principles calculations, we found that the Ir2 dimer already possesses giant MAE of 77 meV. We proposed an effective way to enhance the MAE of the Ir2 dimer to 223~294 meV by simply attaching a halogen atom at one end of the Ir-Ir bond. The underlying mechanism for the record high MAE is attributed to the modification of the energy diagram of the Ir2 dimer by the additional halogen-Ir bonding, which alters the spin-orbit coupling Hamiltonian and hence the magnetic anisotropy. Our strategy can be generalized to design other magnetic molecules or clusters with giant magnetic anisotropy.
△ Less
Submitted 6 September, 2017;
originally announced September 2017.
-
Multiscale simulation on shearing transitions of thin-film lubrication with multi-layer molecules
Authors:
Zuo-Bing Wu,
X. C. Zeng
Abstract:
Shearing transitions of multi-layer molecularly thin-film lubrication systems in variations of the film-substrate coupling strength and the load are studied by using a multiscale method. Three kinds of the interlayer slips found in decreasing the coupling strength are in qualitative agreement with experimental results. Although tribological behaviors are almost insensitive to the smaller coupling…
▽ More
Shearing transitions of multi-layer molecularly thin-film lubrication systems in variations of the film-substrate coupling strength and the load are studied by using a multiscale method. Three kinds of the interlayer slips found in decreasing the coupling strength are in qualitative agreement with experimental results. Although tribological behaviors are almost insensitive to the smaller coupling strength, they and the effective film thickness are enlarged more and more as the larger one increases. When the load increases, the tribological behaviors are similar to those in increasing coupling strength, but the effective film thickness is opposite.
△ Less
Submitted 28 May, 2017;
originally announced May 2017.
-
Au13(8e): A Secondary Block for Describing a Special Group of Liganded Gold Clusters Containing Icosahedral Au13 Motifs
Authors:
Wen Wu Xu,
Xiao Cheng Zeng,
Yi Gao
Abstract:
A grand unified model (GUM) has been proposed recently to understand structure anatomy and evolution of liganded gold clusters. In this work, besidesthe two types of elementary blocks (triangular Au3(2e) and tetrahedral Au4(2e)), we introduce a secondary block, namely, the icosahedral Au13 with 8e valence electrons, noted as Au13(8e). Using this secondary block, structural anatomy and evolution of…
▽ More
A grand unified model (GUM) has been proposed recently to understand structure anatomy and evolution of liganded gold clusters. In this work, besidesthe two types of elementary blocks (triangular Au3(2e) and tetrahedral Au4(2e)), we introduce a secondary block, namely, the icosahedral Au13 with 8e valence electrons, noted as Au13(8e). Using this secondary block, structural anatomy and evolution of a special group of liganded gold nanoclusters containing icosahedral Au13 motifs can be conveniently analyzed. In addition, a new ligand-protected cluster Au49(PR3)10(SR)15Cl2 is predicted to exhibit high chemical and thermal stability, suggesting likelihood of its synthesis in the laboratory.
△ Less
Submitted 2 March, 2017; v1 submitted 20 January, 2017;
originally announced January 2017.
-
Titanium trisulfide monolayer: A new direct-gap semiconductor with high and anisotropic carrier mobility
Authors:
Jun Dai,
Xiao Cheng Zeng
Abstract:
A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS$_3$) monolayer sheet, is predicted to possess desired electronic properties for nanoelectronic applications. On basis of the first-principles calculations within the framework of density functional theory and deformation theory, we show that the TiS$_3$ 2D crystal is a direct gap semiconductor with a band gap of 1.06 eV…
▽ More
A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS$_3$) monolayer sheet, is predicted to possess desired electronic properties for nanoelectronic applications. On basis of the first-principles calculations within the framework of density functional theory and deformation theory, we show that the TiS$_3$ 2D crystal is a direct gap semiconductor with a band gap of 1.06 eV and high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS$_3$ is highly anisotropic, amounting to $\sim$10,000 cm$^2$V$^{-1}$s$^{-1}$ in the \emph{b} direction, which is higher than that of the MoS$_2$ monolayer. Meanwhile, the hole mobility is about two orders of magnitude lower. We also find that bulk TiS$_3$ possesses lower cleavage energy than graphite, indicating high possibility of exfoliation for TiS$_3$ monolayers or multilayers. Both dynamical and thermal stability of the TiS$_3$ monolayer is examined via phonon-spectrum calculation and Born-Oppenheimer molecular dynamics simulation in \emph{NPT} ensemble. The predicted novel electronic properties render the TiS$_3$ monolayer an attractive 2D material for applications in future nanoelectronics.
△ Less
Submitted 10 January, 2015;
originally announced January 2015.
-
Structure and Stability of Two Dimensional Phosphorene with =O or =NH Functionalization
Authors:
Jun Dai,
Xiao Cheng Zeng
Abstract:
We investigate stability and electronic properties of oxy- (=O) or imine- (=NH) functionalized monolayer phosphorene with either single-side or double-side functionalization based on density-functional theory calculations. Our thermodynamic analysis shows that oxy-functionalized phosphorene can be formed under the conditions ranging from ultrahigh vacuum to high concentrations of molecular O2, whi…
▽ More
We investigate stability and electronic properties of oxy- (=O) or imine- (=NH) functionalized monolayer phosphorene with either single-side or double-side functionalization based on density-functional theory calculations. Our thermodynamic analysis shows that oxy-functionalized phosphorene can be formed under the conditions ranging from ultrahigh vacuum to high concentrations of molecular O2, while the imide-functionalized phosphorene can be formed at relatively high concentration of molecular N2H2. In addition, our Born-Oppenheimer molecular dynamics (BOMD) simulation shows that at the ambient condition both O2 and N2H2 can etch phosphorene away.
△ Less
Submitted 26 September, 2014;
originally announced September 2014.
-
The freezing tendency towards 4-coordinated amorphous network causes increase in heat capacity of supercooled Stillinger-Weber silicon
Authors:
Pankaj A. Apte,
Nandlal **ua,
Arvind Kumar Gautam,
Uday Kumar,
Soohaeng Yoo Willow,
Xiao Cheng Zeng,
B. D. Kulkarni
Abstract:
The supercooled liquid silicon, modeled by Stillinger-Weber potential, shows anomalous increase in heat capacity $C_p$, with a maximum $C_p$ value close to 1060 K at zero pressure. We study equilibration and relaxation of the supercooled SW Si, in the temperature range of 1060 K--1070 K at zero pressure. We find that as the relaxation of the metastable supercooled liquid phase initiates, a straigh…
▽ More
The supercooled liquid silicon, modeled by Stillinger-Weber potential, shows anomalous increase in heat capacity $C_p$, with a maximum $C_p$ value close to 1060 K at zero pressure. We study equilibration and relaxation of the supercooled SW Si, in the temperature range of 1060 K--1070 K at zero pressure. We find that as the relaxation of the metastable supercooled liquid phase initiates, a straight line region (SLR) is formed in cumulative potential energy distributions. The configurational temperature corresponding to the SLR is close to 1060 K, which was earlier identified as the freezing temperature of 4-coordinated amorphous network. The SLR is found to be tangential to the distribution of the metastable liquid phase and thus influences the broadness of the distribution. As the bath temperature is reduced from 1070 K to 1060 K, the effective temperature approaches the bath temperature which results in broadening of the metastable phase distribution. This, in turn, causes an increase in overall fluctuations of potential energy and hence an increase of heat capacity. We also find that during initial stages of relaxation, 4-coordinated atoms form 6-membered rings with a chair--like structure and other structural units that indicate crystallization. Simultaneously a strong correlation is established between the number of chair-shaped 6-membered rings and the number of 4-coordinated atoms in the system. This shows that all properties related to 4-coordinated particles are highly correlated as the SLR is formed in potential energy distributions and this can be interpreted as a consequence of `freezing' of amorphous network formed by 4-coordinated particles.
△ Less
Submitted 10 April, 2014;
originally announced April 2014.
-
Phosphorene nanoribbons, nanotubes and van der Waals multilayers
Authors:
Hongyan Guo,
Ning Lu,
Jun Dai,
Xiaojun Wu,
Xiao Cheng Zeng
Abstract:
We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorene nanotubes, multilayer phosphorene, and heterobilayers of phosphorene and two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigate…
▽ More
We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorene nanotubes, multilayer phosphorene, and heterobilayers of phosphorene and two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that zigzag phosphorene nanoribbons (z-PNRs) are metals, regardless of the ribbon width while armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps are insensitive to variation of the ribbon width. We find that tensile compression (or expansion) strains can reduce (or increase) the bandgap of the a-PNRs while an in-plane electric field can significantly reduce the bandgap of a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For single-walled phosphorene nanotubes (SW-PNTs), both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, similar behavior of bandgap modulation can arise as that for a-PNRs. It is known that multilayer phosphorene sheets are semiconductors with their bandgaps decreasing with increasing the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing the electric field, and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosporene with a TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well.
△ Less
Submitted 24 March, 2014;
originally announced March 2014.
-
Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells
Authors:
Jun Dai,
Xiao Cheng Zeng
Abstract:
Phosphorene, a monolayer of black phosphorus, is promising for nanoelectronic applications not only because it is a natural p-type semiconductor but also it possesses a layer-number dependent direct bandgap (in the range of 0.3 eV~1.5 eV). On basis of the density functional theory calculations, we investigate electronic properties of the bilayer phosphorene with different stacking orders. We find…
▽ More
Phosphorene, a monolayer of black phosphorus, is promising for nanoelectronic applications not only because it is a natural p-type semiconductor but also it possesses a layer-number dependent direct bandgap (in the range of 0.3 eV~1.5 eV). On basis of the density functional theory calculations, we investigate electronic properties of the bilayer phosphorene with different stacking orders. We find that the direct bandgap of the bilayers can vary from 0.78 - 1.04 eV with three different stacking orders. In addition, a vertical electric field can further reduce the bandgap down to 0.56 eV (at the field strength 0.5 V/Å). More importantly, we find that when a monolayer of MoS_2 is superimposed with the p-type AA- or AB-stacked bilayer phosphorene, the combined tri-layer can be an effective solar-cell material with type-II heterojunction alignment. The power conversion efficiency is predicted to be ~18% or 16% with AA- or AB-stacked bilayer phosphorene, higher than reported efficiencies of the state-of-the-art trilayer graphene/transition metal dichalcogenide solar cells.
△ Less
Submitted 24 March, 2014;
originally announced March 2014.
-
Van der Waals trilayers and superlattices: Modification of electronic structures of MoS2 by intercalation
Authors:
N. Lu,
H. Y. Guo,
L. Wang,
X. J. Wu,
X. C. Zeng
Abstract:
We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between MoS2 bilayer to form various MoS2/ML/MoS2 sandwich trilayers. We find that the BN monolayer is the most effective sheet to decouple the interlayer vdW coupling of the MoS2 bilayer, and the resulting…
▽ More
We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between MoS2 bilayer to form various MoS2/ML/MoS2 sandwich trilayers. We find that the BN monolayer is the most effective sheet to decouple the interlayer vdW coupling of the MoS2 bilayer, and the resulting sandwich trilayer can recover the electronic structures of the MoS2 monolayer, particularly the direct-gap character. Further study of the MoS2/BN superlattices confirms the effectiveness of the BN monolayer for the decoupling of the MoS2-MoS2 interaction. In addition, the intercalation of transition-metal dichalcogenide (TMDC) MoSe2 or WSe2 sheet renders the sandwich trilayer undergoing an indirect-gap to direct-gap transition due to the newly formed heterogeneous S/Se interfaces. In contrast, the MoS2/WS2/MoS2 sandwich trilayer still retains the indirect-gap character of the MoS2 bilayer due to the lack of the heterogeneous S/Se interfaces. Moreover, the 3D superlattice of the MoS2/TMDC heterostructures also exhibits similar electronic band characters as the MoS2/TMDC/MoS2 trilayer heterostructures, albeit slight decrease of the bandgap than the trilayers. Compared to the bulk MoS2, the 3D MoS2/TMDC superlattice can give rise to new and distinctive properties. Our study offers not only new insights into electronic properties of the vdW multilayer heterostructures but also guidance in designing new heterostructures to modify electronic structures of 2D TMDC crystals.
△ Less
Submitted 13 March, 2014;
originally announced March 2014.
-
Tuning Electronic and Magnetic Properties of Early Transition Metal Dichalcogenides via Tensile Strain
Authors:
Hongyan Guo,
Ning Lu,
Lu Wang,
Xiaojun Wu,
Xiao Cheng Zeng
Abstract:
We have performed a systematic first-principles study of the effect of tensile strains on the electronic properties of early transition-metal dichalcogenide (TMDC) monolayers MX2 (M = Sc, Ti, Zr, Hf, Ta, Cr; X = S, Se, and Te). Our density-functional theory (DFT) calculations suggest that the tensile strain can significantly affect the electronic properties of many early TMDCs in general and the e…
▽ More
We have performed a systematic first-principles study of the effect of tensile strains on the electronic properties of early transition-metal dichalcogenide (TMDC) monolayers MX2 (M = Sc, Ti, Zr, Hf, Ta, Cr; X = S, Se, and Te). Our density-functional theory (DFT) calculations suggest that the tensile strain can significantly affect the electronic properties of many early TMDCs in general and the electronic bandgap in particular. For group IVB TMDCs (TiX2, ZrX2, HfX2), the bandgap increases with the tensile strain, but for ZrX2 and HfX2 (X=S, Se), the bandgap starts to decrease at strain 6% to 8%. For the group-VB TMDCs (TaX2), the tensile strain can either induce the ferromagnetism or enhance the existing ferromagnetism. For the group-VIB TMDCs (CrX2) the direct-to-indirect bandgap transition is seen upon application of the tensile strain, except CrTe2 whose bandgap decreases with the tensile strain even though the direct character of its bandgap is retained. Lastly, for the group-IIIB TMDCs (ScX2) in the T metallic phase, we find that the tensile strain has little effect on their electronic and magnetic properties. Our study suggests that strain engineering is an effective approach to modify electronic and magnetic properties of most early TMDC monolayers, thereby opening an alternative way for future optoelectronic and spintronic applications.
△ Less
Submitted 13 March, 2014;
originally announced March 2014.
-
MoS2/MX2 heterobilayers: Bandgap engineering via tensile strain or external electrical field
Authors:
Ning Lu,
Hongyan Guo,
Lei Li,
Jun Dai,
Lu Wang,
Wai-Ning Mei,
Xiaojun Wu,
Xiao Cheng Zeng
Abstract:
We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X=S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the dire…
▽ More
We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2/MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se). For M = Mo, Cr, W; X=S, Se, all heterobilayers show semiconducting characteristics with an indirect bandgap with the exception of the WSe2/MoS2 heterobilayer which retains the direct-band-gap character of the constituent monolayer. For M = Fe, V; X = S, Se, the MX2/MoS2 heterobilayers exhibit metallic characters. Particular attention of this study has been focused on engineering bandgap of the TMD heterobilayer materials via application of either a tensile strain or an external electric field. We find that with increasing either the biaxial or uniaxial tensile strain, the MX2/MoS2 (M=Mo, Cr, W; X=S, Se) heterobilayers can undergo a semiconductor-to-metal transition. For the WSe2/MoS2 heterobilayer, a direct-to-indirect bandgap transition may occur beyond a critical biaxial or uniaxial strain. For M (=Fe, V) and X (=S, Se), the magnetic moments of both metal and chalcogen atoms are enhanced when the MX2/MoS2 heterobilayers are under a biaxial tensile strain. Moreover, the bandgap of MX2/MoS2 (M=Mo, Cr, W; X=S, Se) heterobilayers can be reduced by the electric field. For two heterobilayers MSe2/MoS2 (M=Mo, Cr), PBE calculations suggest that the indirect-to-direct bandgap transition may occur under an external electric field. The transition is attributed to the enhanced spontaneous polarization. The tunable bandgaps in general and possible indirect-direct bandgap transitions due to tensile strain or external electric field endow the TMD heterobilayer materials a viable candidate for optoelectronic applications.
△ Less
Submitted 8 December, 2013;
originally announced December 2013.
-
Ideal Desalination through Graphyne-4 Membrane: Nanopores for Quantized Water Transport
Authors:
Chongqin Zhu,
Hui Li,
Xiao Cheng Zeng,
Sheng Meng
Abstract:
Graphyne-4 sheet exhibits promising potential for nanoscale desalination to achieve both high water permeability and salt rejection rate. Extensive molecular dynamics simulations on pore-size effects suggest that graphyne-4, with 4 acetylene bonds between two adjacent phenyl rings, has the best performance with 100% salt rejection and an unprecedented water permeability, to our knowledge, of ~13L/…
▽ More
Graphyne-4 sheet exhibits promising potential for nanoscale desalination to achieve both high water permeability and salt rejection rate. Extensive molecular dynamics simulations on pore-size effects suggest that graphyne-4, with 4 acetylene bonds between two adjacent phenyl rings, has the best performance with 100% salt rejection and an unprecedented water permeability, to our knowledge, of ~13L/cm2/day/MPa, about 10 times higher than the state-of-the-art nanoporous graphene reported previously (Nano Lett.s 2012, 12, 3602-3608). In addition, the membrane entails very low energy consumption for producing 1m3 of fresh water, i.e., 3.6e-3 kWh/m3, three orders of magnitude less than the prevailing commercial membranes based on reverse osmosis. Water flow rate across the graphyne-4 sheet exhibits intriguing nonlinear dependence on the pore size owing to the quantized nature of water flow at the nanoscale. Such novel transport behavior has important implications to the design of highly effective and efficient desalination membranes.
△ Less
Submitted 30 June, 2013;
originally announced July 2013.
-
Homogeneous Connectivity of Potential Energy Network in a Solidlike State of Water Cluster
Authors:
Takuma Akimoto,
Toshihiro Kaneko,
Kenji Yasuoka,
Xiao Cheng Zeng
Abstract:
A novel route to the exponential trap**-time distribution within a solidlike state in water clusters is described. We propose a simple homogeneous network (SHN) model to investigate dynamics on the potential energy networks of water clusters. In this model, it is shown that the trap**-time distribution in a solidlike state follows the exponential distribution, whereas the trap**-time distrib…
▽ More
A novel route to the exponential trap**-time distribution within a solidlike state in water clusters is described. We propose a simple homogeneous network (SHN) model to investigate dynamics on the potential energy networks of water clusters. In this model, it is shown that the trap**-time distribution in a solidlike state follows the exponential distribution, whereas the trap**-time distribution in local potential minima within the solidlike state is not exponential. To confirm the exponential trap**-time distribution in a solidlike state, we investigate water clusters, $($H${}_2$O$)_6$ and $($H${}_2$O$)_{12}$, by molecular dynamics simulations. These clusters change dynamically from solidlike to liquidlike state and vice versa. We find that the probability density functions of trap** times in a solidlike state are described by the exponential distribution whereas those of interevent times of large fluctuations in potential energy within the solidlike state follow the Weibull distributions. The results provide a clear evidence that transition dynamics between solidlike and liquidlike states in water clusters are well described by the SHN model, suggesting that the exponential trap**-time distribution within a solidlike state originates from the homogeneous connectivity in the potential energy network.
△ Less
Submitted 24 June, 2013;
originally announced June 2013.
-
CSCO Criterion for Entanglement and Heisenberg Uncertainty Principle
Authors:
**yan Zeng,
Yian Lei,
S. Y. Pei,
X. C. Zeng
Abstract:
We show that quantum entanglement and the Heisenberg uncertainty principle are inextricably connected. Toward this end, a complete set of commuting observables (CSCO) criterion for the entanglement is developed. Assuming (A1,A2,...) and (B1,B2,...) being two CSCO's for a given system, and C being the matrix, Cij = i [Bi,Aj], for each given row i (i=1,2,...) if at least one matrix element Cij (j=1,…
▽ More
We show that quantum entanglement and the Heisenberg uncertainty principle are inextricably connected. Toward this end, a complete set of commuting observables (CSCO) criterion for the entanglement is developed. Assuming (A1,A2,...) and (B1,B2,...) being two CSCO's for a given system, and C being the matrix, Cij = i [Bi,Aj], for each given row i (i=1,2,...) if at least one matrix element Cij (j=1,2,...) is nonzero, then for the simultaneous eigenstates |ψ)=|A1',A2',...) of (A1,A2,...), the simultaneous measurements of (B1,B2,...) are, in general,entangled. The only exception is when all the simultaneous eigenstates |ψ)= A1', A2',...), (ψ|C|ψ)=0. This CSCO criterion may be considered as an extension of the Heisenberg uncertainty principle to quantum systems with either two (or more) particles or multi-degrees of freedom (MDF).
△ Less
Submitted 14 June, 2013;
originally announced June 2013.
-
Electronic structures of defective BN nanotubes under transverse electric fields
Authors:
Shuanglin Hu,
Zhenyu Li,
X. C. Zeng,
**long Yang
Abstract:
We investigate the electronic structures of some defective boron nitride nanotubes (BNNTs) under transverse electric fields within density-functional theory. (16,0) BNNTs with antisite, carbon substitution, single vacancy, and Stone-Wales 5775 defects are studied. Under transverse electric fields, the band gaps of the defective BNNTs are reduced, similar to the pristine ones. The energy levels o…
▽ More
We investigate the electronic structures of some defective boron nitride nanotubes (BNNTs) under transverse electric fields within density-functional theory. (16,0) BNNTs with antisite, carbon substitution, single vacancy, and Stone-Wales 5775 defects are studied. Under transverse electric fields, the band gaps of the defective BNNTs are reduced, similar to the pristine ones. The energy levels of the defect states vary with the transverse electric field directions, due to the different electrostatic potential shift at the defect sites induced by the electric fields. Therefore, besides electronic structure and optical property engineering, the transverse electric field can be used to identify the defect positions in BNNTs.
△ Less
Submitted 14 April, 2008;
originally announced April 2008.
-
Half Metallicity in Hybrid BCN Nanoribbons
Authors:
Er-Jun Kan,
Xiaojun Wu,
Zhenyu Li,
X. C. Zeng,
**long Yang,
J. G. Hou
Abstract:
We report a first-principles electronic-structure calculation on C and BN hybrid zigzag nanoribbons. We find that half-metallicity can arise in the hybrid nanoribbons even though stand-alone C or BN nanoribbon possesses a finite band gap. This unexpected half-metallicity in the hybrid nanos-tructures stems from a competition between the charge and spin polarizations, as well as from the pi orbit…
▽ More
We report a first-principles electronic-structure calculation on C and BN hybrid zigzag nanoribbons. We find that half-metallicity can arise in the hybrid nanoribbons even though stand-alone C or BN nanoribbon possesses a finite band gap. This unexpected half-metallicity in the hybrid nanos-tructures stems from a competition between the charge and spin polarizations, as well as from the pi orbital hybridization between C and BN. Our results point out a possibility of making spintronic devices solely based on nanoribbons and a new way of designing metal-free half metals.
△ Less
Submitted 13 March, 2008;
originally announced March 2008.
-
Hydrogen storage in pillared Li-dispersed boron carbide nanotubes
Authors:
Xiaojun Wu,
Yi Gao,
Xiao Cheng Zeng
Abstract:
Ab initio density-functional theory study suggests that pillared Li-dispersed boron carbide nanotubes is capable of storing hydrogen with a mass density higher than 6.0 weight% and a volumetric density higher than 45 g/L. The boron substitution in carbon nanotube greatly enhances the binding energy of Li atom to the nanotube, and this binding energy (~ 2.7 eV) is greater than the cohesive energy…
▽ More
Ab initio density-functional theory study suggests that pillared Li-dispersed boron carbide nanotubes is capable of storing hydrogen with a mass density higher than 6.0 weight% and a volumetric density higher than 45 g/L. The boron substitution in carbon nanotube greatly enhances the binding energy of Li atom to the nanotube, and this binding energy (~ 2.7 eV) is greater than the cohesive energy of lithium metal (~1.7 eV), preventing lithium from aggregation (or segregation) at high lithium do** concentration. The adsorption energy of hydrogen on the Li-dispersed boron carbide nanotube is in the range of 10 ~24 kJ/mol, suitable for reversible H2 adsorption/desorption at room temperature and near ambient pressure.
△ Less
Submitted 20 March, 2007;
originally announced March 2007.
