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Twisted MoSe2 Homobilayer Behaving as a Heterobilayer
Authors:
Arka Karmakar,
Abdullah Al-Mahboob,
Natalia Zawadzka,
Mateusz Raczyński,
Weiguang Yang,
Mehdi Arfaoui,
Gayatri,
Julia Kucharek,
Jerzy T. Sadowski,
Hyeon Suk Shin,
Adam Babiński,
Wojciech Pacuski,
Tomasz Kazimierczuk,
Maciej R Molas
Abstract:
Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a tw…
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Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.
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Submitted 7 June, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
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Pressure-induced optical anisotropy of HfS$_2$
Authors:
Igor Antoniazzi,
Tomasz Woźniak,
Amit Pawbake,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Zahir Muhammad,
Weisheng Zhao,
Jordi Ibáñez,
Clement Faugeras,
Maciej R. Molas,
Adam Babiński
Abstract:
The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The chang…
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The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The change in the RS lineshape manifests a pressure-induced phase transition in HfS$_2$. The simultaneous observation of both low-pressure (LP) and high-pressure (HP) related RS peaks suggests the corresponding coexistence of two different phases over a large pressure range. We found that the HP-related phase is metastable, persisting during the decompression cycle down to $P$=1.2 GPa with the LP-related features finally recovering at even lower pressures. The angle-resolved polarized RS (ARPRS) performed under $P$=7.4 GPa revealed a strong in-plane anisotropy of both the LP-related A$_{1g}$ mode and the HP peaks. The anisotropy is related to the possible distortion of the structure induced by the non-hydrostatic component of the pressure. We describe the obtained results by the influence of the non-hydrostatic pressure on the observed phase transition. We interpret our results in terms of a distorted $Pnma$ phase as a possible HP induced structure of HfS$_2$.
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Submitted 29 February, 2024;
originally announced February 2024.
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Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton
Authors:
Mehdi Arfaoui,
Natalia Zawadzka,
Sabrine Ayari,
Zhaolong Chen,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej Koperski,
Sihem Jaziri,
Maciej R. Molas
Abstract:
To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, a…
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To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN, using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, \textit{ab initio} calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. Combining \textit{ab initio} calculations and EMA methods, we investigate the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly nonhydrogenic features. Very good agreement with the experiment is observed.
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Submitted 29 April, 2023;
originally announced May 2023.
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The effect of temperature and excitation energy on Raman scattering in bulk HfS$_2$
Authors:
Igor Antoniazzi,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Tomasz Woźniak,
Jordi Ibáñez,
Zahir Muhammad,
Weisheng Zhao,
Maciej R. Molas,
Adam Babiński
Abstract:
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The…
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Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a mode $ω_1$ (134 cm$^{-1}$) and the emergence of a new mode at approx. 184 cm$^{-1}$, labeled Z, is reported. The optical anisotropy of the RS in HfS$_2$ is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A$_{\textrm{1g}}$ mode at $T$=5 K and of the E$_{\textrm{g}}$ mode at $T$=300 K in the RS spectrum excited with 3.06~eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboring HfS$_2$ layers, which inevitably result from the growth procedure.
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Submitted 12 December, 2022;
originally announced December 2022.
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Analogy and dissimilarity of excitons in monolayer and bilayer of MoSe$_2$
Authors:
Łucja Kipczak,
Artur O. Slobodeniuk,
Tomasz Woźniak,
Mukul Bhatnagar,
Natalia Zawadzka,
Katarzyna Olkowska-Pucko,
Magdalena Grzeszczyk,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej R. Molas
Abstract:
Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe$_2$ encapsulated in…
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Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe$_2$ encapsulated in hexagonal BN. The measured magnetic field evolutions of the reflectance contrast spectra of the MoSe$_2$ ML and BL allow us to determine $g$-factors of intralayer A and B excitons, as well as the $g$-factor of the interlayer exciton. We explain the dependence of $g$-factors on the number of layers and excitation state using first principles calculations. Furthermore, we demonstrate that the experimentally measured ladder of excitonic $s$ states in the ML can be reproduced using the $\mathbf{k\cdot p}$ approach with the Rytova-Keldysh potential that describes the electron-hole interaction. In contrast, the analogous calculation for the BL case requires taking into account the out-of-plane dielectric response of the MoSe$_2$ BL.
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Submitted 16 January, 2023; v1 submitted 29 November, 2022;
originally announced November 2022.
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Excitons and trions in WSSe monolayers
Authors:
Katarzyna Olkowska-Pucko,
Elena Blundo,
Natalia Zawadzka,
Salvatore Cianci,
Diana Vaclavkova,
Piotr Kapuściński,
Dipankar Jana,
Giorgio Pettinari,
Marco Felici,
Karol Nogajewski,
Miroslav Bartos,
Kenji Watanabe,
Takashi Taniguchi,
Clement Faugeras,
Marek Potemski,
Adam Babiński,
Antonio Polimeni,
Maciej R. Molas
Abstract:
The possibility of almost linear tuning of the band gap and of the electrical and optical properties in monolayers (MLs) of semiconducting transition metal dichalcogenide (S-TMD) alloys opens up the way to fabricate materials with on-demand characteristics. By making use of photoluminescence spectroscopy, we investigate optical properties of WSSe MLs with a S/Se ratio of 57/43 deposited on SiO…
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The possibility of almost linear tuning of the band gap and of the electrical and optical properties in monolayers (MLs) of semiconducting transition metal dichalcogenide (S-TMD) alloys opens up the way to fabricate materials with on-demand characteristics. By making use of photoluminescence spectroscopy, we investigate optical properties of WSSe MLs with a S/Se ratio of 57/43 deposited on SiO$_2$/Si substrate and encapsulated in hexagonal BN flakes. Similarly to the $"parent"$ WS$_2$ and WSe$_2$ MLs, we assign the WSSe MLs to the ML family with the dark ground exciton state. We find that, in addition to the neutral bright A exciton line, three observed emission lines are associated with negatively charged excitons. The application of in-plane and out-of-plane magnetic fields allows us to assign undeniably the bright and dark (spin- and momentum-forbidden) negative trions as well as the phonon replica of the dark spin-forbidden complex. Furthermore, the existence of the single photon emitters in the WSSe ML is also demonstrated, thus prompting the opportunity to enlarge the wavelength range for potential future quantum applications of S-TMDs.
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Submitted 29 November, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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Excitonic luminescence of iodine-intercalated HfS$_2$
Authors:
N. Zawadzka,
T. Woźniak,
M. Strawski,
I. Antoniazzi,
M. Grzeszczyk,
K. Olkowska-Pucko,
Z. Muhammad,
J. Ibanez,
W. Zhao,
J. Jadczak,
R. Stępniewski,
A. Babiński,
M. R. Molas
Abstract:
Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to…
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Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to the recombination of excitons bound to iodine (I$_2$) molecules intercalated between layers of HfS$_2$. The I$_2$ molecules are introduced to the crystal during the growth as halogen transport agents in the growth process. Their presence in the crystal is confirmed by secondary ion mass spectroscopy.
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Submitted 16 January, 2023; v1 submitted 18 September, 2022;
originally announced September 2022.
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Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS$_{2}$
Authors:
Mukul Bhatnagar,
Tomasz Woźniak,
Łucja Kipczak,
Natalia Zawadzka,
Katarzyna Olkowska-Pucko,
Magdalena Grzeszczyk,
Kenji Watanabe,
Takashi Taniguchi,
Adam Babiński,
Maciej R. Molas
Abstract:
The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of…
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The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1$^{st}$ and 2$^{nd}$ order phonon modes is unambiguously observed in a broad range of temperatures from 5 K to 320 K. The spectrum includes the Raman-active modes, $i.e.$ E$_\textrm{1g}^{2}$($Γ$) and A$_\textrm{1g}$($Γ$) along with their Davydov-split counterparts, $i.e.$ E$_\textrm{1u}$($Γ$) and B$_\textrm{1u}$($Γ$). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A$_{1g}$($Γ$) mode, which dominates the Raman scattering spectrum at $T$=5~K quenches with increasing temperature. Surprisingly, at room temperature the B$_\textrm{1u}$($Γ$) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A$_\textrm{1g}$($Γ$) counterpart.
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Submitted 18 September, 2022; v1 submitted 19 April, 2022;
originally announced April 2022.
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Anisotropic Optical And Vibrational Properties Of GeS
Authors:
Natalia Zawadzka,
Łucja Kipczak,
Tomasz Woźniak,
Katarzyna Olkowska-Pucko,
Magdalena Grzeszczyk,
Adam Babiński,
Maciej R. Molas
Abstract:
The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature ($T$=5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding em…
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The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature ($T$=5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding emission is dominated by the disorder/impurity- and/or phonon-assisted recombination processes. Both the RC and PL spectra are found to be linearly polarized along the armchair direction. The low and room ($T$=300 K) temperature RS spectra consist of six Raman peaks identified with the help of Density Fuctional Theory (DFT) calculations: A$^1_{\textrm{g}}$, A$^2_{\textrm{g}}$, A$^3_{\textrm{g}}$, A$^4_{\textrm{g}}$, B$^1_{\textrm{1g}}$, and B$^2_{\textrm{1g}}$, which polarization properties are studied under four different excitation energies. We found that the polarization orientations of the A$^2_{\textrm{g}}$ and A$^4_{\textrm{g}}$ modes under specific excitation energy can be useful tools to determine the GeS crystallographic directions: armchair and zigzag.
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Submitted 29 October, 2021; v1 submitted 28 October, 2021;
originally announced October 2021.
