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Characterisation and simulation of stitched CMOS strip sensors
Authors:
Naomi Davis,
Jan-Hendrik Arling,
Marta Baselga,
Leena Diehl,
Jochen Dingfelder,
Ingrid-Maria Gregor,
Marc Hauser,
Fabian Hügging,
Tomasz Hemperek,
Karl Jakobs,
Michael Karagounis,
Roland Koppenhöfer,
Kevin Kröninger,
Fabian Lex,
Ulrich Parzefall,
Arturo Rodriguez,
Birkan Sari,
Niels Sorgenfrei,
Simon Spannagel,
Dennis Sperlich,
Tianyang Wang,
Jens Weingarten,
Iveta Zatocilova
Abstract:
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two dif…
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In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.
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Submitted 14 May, 2024;
originally announced May 2024.
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Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors
Authors:
I. Zatocilova,
J. -H. Arling,
M. Baselga,
N. Davis,
L. Diehl,
J. Dingfelder,
I. -M. Gregor,
M. Hauser,
T. Hemperek,
F. Hügging,
K. Jakobs,
M. Karagounis,
K. Kröninger,
F. Lex,
U. Parzefall,
A. Rodriguez,
B. Sari,
N. Sorgenfrei,
S. Spannagel,
D. Sperlich,
T. Wang,
J. Weingarten
Abstract:
In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors w…
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In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.
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Submitted 15 November, 2023; v1 submitted 28 September, 2023;
originally announced September 2023.
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Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities
Authors:
I. Zatocilova,
M. Mikestikova,
V. Latonova,
J. Kroll,
R. Privara,
P. Novotny,
D. Dudas,
J. Kvasnicka
Abstract:
The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes we…
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The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60 °C. The Geant4 toolkit for simulation of the passage of particles through matter was used to simulate the deposited energy homogeneity, to verify the equal distribution of total deposited energies through all the layers of irradiated samples, and to calculate the secondary electron spectra in the irradiation box. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring current-voltage characteristics (IV), and the evolution of the full depletion voltage with the total ionizing dose, by measuring capacitance-voltage characteristics (CV). It has been observed that the bulk leakage current increases linearly with total ionizing dose, and the damage coefficient depends on the initial resistivity of the silicon diode. The effective do** concentration and therefore full depletion voltage significantly decreases with increasing total ionizing dose, before starting to increase again at a specific dose. We assume that this decrease is caused by the effect of acceptor removal. Another noteworthy observation of this study is that the IV and CV measurements of the gamma irradiated diodes do not reveal any annealing effect.
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Submitted 28 September, 2023;
originally announced September 2023.
