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Strain-induced topological phase transition in phosphorene and phosphorene nanoribbons
Authors:
E. Taghizadeh Sisakht,
F. Fazileh,
M. H. Zare,
M. Zarenia,
F. M. Peeters
Abstract:
Using the tight-binding (TB) approximation with inclusion of the spin-orbit interaction, we predict a topological phase transition in the electronic band structure of phosphorene in the presence of axial strains. We derive a low-energy TB Hamiltonian that includes the spin-orbit interaction for bulk phosphorene. Applying a compressive biaxial in-plane strain and perpendicular tensile strain in ran…
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Using the tight-binding (TB) approximation with inclusion of the spin-orbit interaction, we predict a topological phase transition in the electronic band structure of phosphorene in the presence of axial strains. We derive a low-energy TB Hamiltonian that includes the spin-orbit interaction for bulk phosphorene. Applying a compressive biaxial in-plane strain and perpendicular tensile strain in ranges where the structure is still stable leads to a topological phase transition. We also examine the influence of strain on zigzag phosphorene nanoribbons (zPNRs) and the formation of the corresponding protected edge states when the system is in the topological phase. For zPNRs up to a width of 100 nm the energy gap is at least three orders of magnitude larger than the thermal energy at room temperature.
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Submitted 18 August, 2016;
originally announced August 2016.
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Scaling laws for band gaps of phosphorene nanoribbons: A tight-binding calculation
Authors:
Esmaeil Taghizadeh Sisakht,
Mohammad H. Zare,
Farhad Fazileh
Abstract:
In this study, we analyze the band structure, the state characterization, and electronic transport of monolayer black phosphorus (phosphorene) zigzag nanoribbons (zPNRs) and armchair nanoribbons (aPNRs), using five-parameter tight-binding (TB) approximation. In zPNRs, the ratio of the two dominant hop** parameters indicates the possibility of a relativistic dispersion relation and the existence…
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In this study, we analyze the band structure, the state characterization, and electronic transport of monolayer black phosphorus (phosphorene) zigzag nanoribbons (zPNRs) and armchair nanoribbons (aPNRs), using five-parameter tight-binding (TB) approximation. In zPNRs, the ratio of the two dominant hop** parameters indicates the possibility of a relativistic dispersion relation and the existence of a pair of separate quasi-flat bands at the Fermi level. Moreover, the corresponding states are edge localized if their bands are well separated from the valence and conduction bands. We also investigated the scaling laws of the band gaps versus ribbon widths for the armchair and zigzag phosphorene nanoribbons. In aPNRs, the transverse electric field along the ribbon width enhances the band gap closure by shifting the energy of the valence and conduction band edge states. For zPNRs, a gap occurs at the middle of the relatively degenerate quasi-flat bands; thus, these ribbons are a promising candidate for future field-effect transistors.
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Submitted 14 August, 2015; v1 submitted 26 August, 2014;
originally announced August 2014.
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Valence Bond Phases in $S=1/2$ Kane-Mele-Heisenberg Model
Authors:
Mohammad H. Zare,
Hamid Mosadeq,
Farhad Shahbazi,
S. A. Jafari
Abstract:
The phase diagram of Kane-Mele-Heisenberg (KMH) model in classical limit~\cite{zare}, contains disordered regions in the coupling space, as the result of to competition among different terms in the Hamiltonian, leading to frustration in finding a unique ground state. In this work we explore the nature of these phase in the quantum limit, for a $S=1/2$. Employing exact diagonalization (ED) in…
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The phase diagram of Kane-Mele-Heisenberg (KMH) model in classical limit~\cite{zare}, contains disordered regions in the coupling space, as the result of to competition among different terms in the Hamiltonian, leading to frustration in finding a unique ground state. In this work we explore the nature of these phase in the quantum limit, for a $S=1/2$. Employing exact diagonalization (ED) in $S_z$ and nearest neighbor valence bond (NNVB) bases, bond and plaquette valence bond mean field theories, We show that the disordered regions are divided into ordered quantum states in the form of plaquette valence bond crystal(PVBC) and staggered dimerized (SD) phases.
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Submitted 25 July, 2014;
originally announced July 2014.
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Zero Temperature Phase Diagram of the Classical Kane-Mele-Heisenberg Model
Authors:
Mohammad Hossein Zare,
Farhad Fazileh,
Farhad Shahbazi
Abstract:
The classical phase diagram of the Kane-Mele-Heisenberg model is obtained by three complementary methods: Luttinger-Tisza, variational minimization, and the iterative minimization method. Six distinct phases were obtained in the space of the couplings. Three phases are commensurate with long-range ordering, planar N{é}el states in horizontal plane (phase.I), planar states in the plane vertical to…
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The classical phase diagram of the Kane-Mele-Heisenberg model is obtained by three complementary methods: Luttinger-Tisza, variational minimization, and the iterative minimization method. Six distinct phases were obtained in the space of the couplings. Three phases are commensurate with long-range ordering, planar N{é}el states in horizontal plane (phase.I), planar states in the plane vertical to the horizontal plane (phase.VI) and collinear states normal to the horizontal plane (phase.II). However the other three, are infinitely degenerate due to the frustrating competition between the couplings, and characterized by a manifold of incommensurate wave-vectors. These phases are, planar helical states in horizontal plane (phase.III), planar helical states in a vertical plane (phase.IV) and non-coplanar states (phase.V). Employing the linear spin-wave analysis, it is found that the quantum fluctuations select a set of symmetrically equivalent states in phase.III, through the quantum order-by-disorder mechanism. Based on some heuristic arguments is argued that the same scenario may also occur in the other two frustrated phases VI and V.
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Submitted 28 June, 2013; v1 submitted 10 April, 2013;
originally announced April 2013.
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Anderson Transition in Disordered Bilayer Graphene
Authors:
M. H. Zare,
Mohsen Amini,
Farhad Shahbazi,
S. A. Jafari
Abstract:
Employing the Kernel Polynomial method (KPM), we study the electronic properties of the graphene bilayers in the presence of diagonal disorder, within the tight-binding approximation. The KPM method enables us to calculate local density of states (LDOS) without need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS's at different lattice sites as a criterion to…
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Employing the Kernel Polynomial method (KPM), we study the electronic properties of the graphene bilayers in the presence of diagonal disorder, within the tight-binding approximation. The KPM method enables us to calculate local density of states (LDOS) without need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS's at different lattice sites as a criterion to distinguish the localized states from extended ones. We find that bilayer graphene undergoes Anderson metal-insulator transition at a critical value of disorder strength.
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Submitted 23 February, 2010;
originally announced February 2010.
