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The dynamics of scattering in undulatory active collisions
Authors:
Jennifer M. Rieser,
Perrin E. Schiebel,
Arman Pazouki,
Feifei Qian,
Zachary Goddard,
Andrew Zangwill,
Dan Negrut,
Daniel I. Goldman
Abstract:
Natural and artificial self-propelled systems must manage environmental interactions during movement. Such interactions, which we refer to as active collisions, are fundamentally different from momentum-conserving interactions studied in classical physics, largely because the internal driving of the locomotor can lead to persistent contact with heterogeneities. Here, we experimentally and numerica…
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Natural and artificial self-propelled systems must manage environmental interactions during movement. Such interactions, which we refer to as active collisions, are fundamentally different from momentum-conserving interactions studied in classical physics, largely because the internal driving of the locomotor can lead to persistent contact with heterogeneities. Here, we experimentally and numerically study the effects of active collisions on a laterally-undulating sensory-deprived robophysical model, whose dynamics are applicable to self-propelled systems across length scales and environments. The robot moves via spatial undulation of body segments, with a nearly-linear center-of-geometry trajectory. Interactions with a single rigid post scatter the robot, and these deflections are proportional to the head-post contact duration. The distribution of scattering angles is smooth and strongly-peaked directly behind the post. Interactions with a single row of evenly-spaced posts (with inter-post spacing $d$) produce distributions reminiscent of far-field diffraction patterns: as $d$ decreases, distinct secondary peaks emerge as large deflections become more likely. Surprisingly, we find that the presence of multiple posts does not change the nature of individual collisions; instead, multi-modal scattering patterns arise from multiple posts altering the likelihood of individual collisions to occur. As $d$ decreases, collisions near the leading edges of the posts become more probable, and we find that these interactions are associated with larger deflections. Our results, which highlight the surprising dynamics that can occur during active collisions of self-propelled systems, can inform control principles for locomotors in complex terrain and facilitate design of task-capable active matter.
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Submitted 11 June, 2018; v1 submitted 30 November, 2017;
originally announced December 2017.
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The education of Walter Kohn and the creation of density functional theory
Authors:
Andrew Zangwill
Abstract:
The theoretical solid-state physicist Walter Kohn was awarded one-half of the 1998 Nobel Prize in Chemistry for his mid-1960's creation of an approach to the many-particle problem in quantum mechanics called density functional theory (DFT). In its exact form, DFT establishes that the total charge density of any system of electrons and nuclei provides all the information needed for a complete descr…
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The theoretical solid-state physicist Walter Kohn was awarded one-half of the 1998 Nobel Prize in Chemistry for his mid-1960's creation of an approach to the many-particle problem in quantum mechanics called density functional theory (DFT). In its exact form, DFT establishes that the total charge density of any system of electrons and nuclei provides all the information needed for a complete description of that system. This was a breakthrough for the study of atoms, molecules, gases, liquids, and solids. Before DFT, it was thought that only the vastly more complicated many-electron wave function was needed for a complete description of such systems. Today, fifty years after its introduction, DFT (in one of its approximate forms) is the method of choice used by most scientists to calculate the physical properties of materials of all kinds. In this paper, I present a biographical essay of Kohn's educational experiences and professional career up to and including the creation of DFT.
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Submitted 20 March, 2014;
originally announced March 2014.
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Model and Simulations of the Epitaxial Growth of Graphene on Non-Planar 6H-SiC Surfaces
Authors:
Fan Ming,
Andrew Zangwill
Abstract:
We study step flow growth of epitaxial graphene on 6H-SiC using a one dimensional kinetic Monte Carlo model. The model parameters are effective energy barriers for the nucleation and propagation of graphene at the SiC steps. When the model is applied to graphene growth on vicinal surfaces, a strip width distribution is used to characterize the surface morphology. Additional kinetic processes are i…
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We study step flow growth of epitaxial graphene on 6H-SiC using a one dimensional kinetic Monte Carlo model. The model parameters are effective energy barriers for the nucleation and propagation of graphene at the SiC steps. When the model is applied to graphene growth on vicinal surfaces, a strip width distribution is used to characterize the surface morphology. Additional kinetic processes are included to study graphene growth on SiC nano-facets. Our main result is that the original nano-facet is fractured into several nano-facets during graphene growth. This phenomenon is characterized by the angle at which the fractured nano-facet is oriented with respect to the basal plane. The distribution of this angle across the surface is found to be related to the strip width distribution for vicinal surfaces. As the terrace propagation barrier decreases, the fracture angle distribution changes continously from two-sided Gaussian to one-sided power-law. Using this distribution, it will be possible to extract energy barriers from experiments and interpret the growth morphology quantitatively.
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Submitted 16 September, 2011;
originally announced September 2011.
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Novel growth mechanism of epitaxial graphene on metals
Authors:
Andrew Zangwill,
Dimitri D. Vvedensky
Abstract:
Graphene, a hexagonal sheet of $sp^2$-bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and chemical exfoliation of graphite do not easily scale up for application purposes. Epitaxial graphene provides an attractive alternative, though there are many challen…
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Graphene, a hexagonal sheet of $sp^2$-bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and chemical exfoliation of graphite do not easily scale up for application purposes. Epitaxial graphene provides an attractive alternative, though there are many challenges, not least of which is the absence of an understanding of the complex atomistic assembly kinetics of graphene. Here, we present a simple rate theory of epitaxial graphene growth on close-packed metal surfaces. Based on recent low-energy electron-diffraction microscopy experiments (LEEM) \cite{loginova09}, our theory supposes that graphene islands grow predominantly by the addition of five-atom clusters, rather than solely by the capture of diffusing carbon atoms. With suitably chosen kinetic parameters, our theory produces a time-dependent carbon adatom density that is in quantitative agreement with measured data. The temperature-dependence of this adatom density at the onset of nucleation leads us to predict that the smallest stable precursor to graphene growth is an immobile island composed of six five-atom clusters. Our findings provide a starting point for more detailed simulations which will yield important input to develo** strategies for the large-scale production of epitaxial graphene.
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Submitted 22 November, 2010;
originally announced November 2010.
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A model for the epitaxial growth of graphene on 6H-SiC
Authors:
Fan Ming,
Andrew Zangwill
Abstract:
We introduce a kinetic model for the growth of epitaxial graphene on 6H-SiC. The model applies to vicinal surfaces composed of half-unit-cell height steps where experiment shows that step flow sublimation of SiC promotes the formation and growth of graphene strips parallel to the step edges. The model parameters are effective energy barriers for the nucleation and subsequent propagation of graphen…
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We introduce a kinetic model for the growth of epitaxial graphene on 6H-SiC. The model applies to vicinal surfaces composed of half-unit-cell height steps where experiment shows that step flow sublimation of SiC promotes the formation and growth of graphene strips parallel to the step edges. The model parameters are effective energy barriers for the nucleation and subsequent propagation of graphene at the step edges. Using both rate equations and kinetic Monte Carlo simulations, two distinct growth regimes emerge from a study of the layer coverage and distribution of top-layer graphene strip widths as a function of total coverage, vicinal angle, and the model parameters. One regime is dominated by the coalescence of strips. The other regime is dominated by a novel "climb-over" process which facilitates the propagation of graphene from one terrace to the next. Comparing our results to scanning microscopy studies will provide the first quantitative insights into the kinetics of growth for this unique epitaxial system.
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Submitted 10 May, 2011; v1 submitted 17 November, 2010;
originally announced November 2010.
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Phase Field Modelling of Submonolayer Epitaxial Growth
Authors:
Fan Ming,
Andrew Zangwill
Abstract:
We report simulations of submonolayer epitaxial growth using a continuum phase field model. The island density and the island size distribution both show scaling behavior. When the capillary length is small, the island size distribution is consistent with irreversible aggregation kinetics. As the capillary length increases, the island size distribution reflects the effects of reversible aggregati…
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We report simulations of submonolayer epitaxial growth using a continuum phase field model. The island density and the island size distribution both show scaling behavior. When the capillary length is small, the island size distribution is consistent with irreversible aggregation kinetics. As the capillary length increases, the island size distribution reflects the effects of reversible aggregation. These results are in quantitative agreement with other simulation methods and with experiments. However, the scaling of the island total density does not agree with known results. The reasons are traced to the mechanisms of island nucleation and aggregation in the phase field model.
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Submitted 26 March, 2010;
originally announced March 2010.
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Step-edge instability during epitaxial growth of graphene from SiC(0001)
Authors:
Valery Borovikov,
Andrew Zangwill
Abstract:
The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard because SiC is itself a useful semiconductor and, by suitable manipulation of the growth conditions, epitaxial films can be produced that exhibit all the transport…
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The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard because SiC is itself a useful semiconductor and, by suitable manipulation of the growth conditions, epitaxial films can be produced that exhibit all the transport properties of ideal, two-dimensional graphene desired for device applications. Nevertheless, there is little or no understanding of the actual kinetics of growth, which is likely to be required for future process control. As a step in this direction, we propose a local heat release mechanism to explain finger-like structures observed when graphene is grown by step flow decomposition of SiC(0001). Using a continuum equation of motion for the shape evolution of a moving step, a linear stability analysis predicts whether a shape perturbation of a straight moving step grows or decays as a function of growth temperature, the background pressure of Si maintained during growth, and the effectiveness of an inert buffer gas to retard the escape of Si atoms from the crystal surface. The theory gives semi-quantitative agreement with experiment for the characteristic separation between fingers observed when graphene is grown in a low-pressure induction furnace or under ultrahigh vacuum conditions.
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Submitted 9 July, 2009;
originally announced July 2009.
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Step bunching of vicinal 6H-SiC{0001} surfaces
Authors:
Valery Borovikov,
Andrew Zangwill
Abstract:
We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three inequivalent terraces, we reproduce the experimentally observed tendency for single bilayer height steps to bunch into half unit cell height steps. By taking acc…
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We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three inequivalent terraces, we reproduce the experimentally observed tendency for single bilayer height steps to bunch into half unit cell height steps. By taking account of the different mobilities of steps with different structures, we reproduce the experimentally observed tendency for adjacent pairs of half unit cell height steps to bunch into full unit cell height steps. A prediction of our simulations is that growth-induced and etching-induced step bunching lead to different surface terminations for the exposed terraces when full unit cell height steps are present.
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Submitted 11 March, 2009;
originally announced March 2009.
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Regimes of Precursor-Mediated Epitaxial Growth
Authors:
A. Zangwill,
D. D. Vvedensky
Abstract:
A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the identification of various {\it characteristic length scales} associated with the surface processes. Study of the relative magnitudes of these lengths permits one to iden…
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A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the identification of various {\it characteristic length scales} associated with the surface processes. Study of the relative magnitudes of these lengths permits one to identify regimes of qualitatively different growth kinetics as a function of temperature and deposition flux. The approach is illustrated with a simple model which takes account of deposition, diffusion, desorption, dissociation, and step incorporation of a single precursor species, as well as the usual processes of atomic diffusion and step incorporation. Experimental implications are discussed in some detail.
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Submitted 8 December, 2007;
originally announced December 2007.
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Adiabatic Domain Wall Motion and Landau-Lifshitz Dam**
Authors:
M. D. Stiles,
W. M. Saslow,
M. J. Donahue,
A. Zangwill
Abstract:
Recent theory and measurements of the velocity of current-driven domain walls in magnetic nanowires have re-opened the unresolved question of whether Landau-Lifshitz dam** or Gilbert dam** provides the more natural description of dissipative magnetization dynamics. In this paper, we argue that (as in the past) experiment cannot distinguish the two, but that Landau-Lifshitz dam** neverthele…
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Recent theory and measurements of the velocity of current-driven domain walls in magnetic nanowires have re-opened the unresolved question of whether Landau-Lifshitz dam** or Gilbert dam** provides the more natural description of dissipative magnetization dynamics. In this paper, we argue that (as in the past) experiment cannot distinguish the two, but that Landau-Lifshitz dam** nevertheless provides the most physically sensible interpretation of the equation of motion. From this perspective, (i) adiabatic spin-transfer torque dominates the dynamics with small corrections from non-adiabatic effects; (ii) the dam** always decreases the magnetic free energy, and (iii) microscopic calculations of dam** become consistent with general statistical and thermodynamic considerations.
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Submitted 31 May, 2007; v1 submitted 1 February, 2007;
originally announced February 2007.
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A numerical method to solve the Boltzmann equation for a spin valve
Authors:
Jiang Xiao,
A. Zangwill,
M. D. Stiles
Abstract:
We present a numerical algorithm to solve the Boltzmann equation for the electron distribution function in magnetic multilayer heterostructures with non-collinear magnetizations. The solution is based on a scattering matrix formalism for layers that are translationally invariant in plane so that properties only vary perpendicular to the planes. Physical quantities like spin density, spin current…
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We present a numerical algorithm to solve the Boltzmann equation for the electron distribution function in magnetic multilayer heterostructures with non-collinear magnetizations. The solution is based on a scattering matrix formalism for layers that are translationally invariant in plane so that properties only vary perpendicular to the planes. Physical quantities like spin density, spin current, and spin-transfer torque are calculated directly from the distribution function. We illustrate our solution method with a systematic study of the spin-transfer torque in a spin valve as a function of its geometry. The results agree with a hybrid circuit theory developed by Slonczewski for geometries typical of those measured experimentally.
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Submitted 16 January, 2007;
originally announced January 2007.
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Spin Transfer Torque for Continuously Variable Magnetization
Authors:
Jiang Xiao,
A. Zangwill,
M. D. Stiles
Abstract:
We report quantum and semi-classical calculations of spin current and spin-transfer torque in a free-electron Stoner model for systems where the magnetization varies continuously in one dimension.Analytic results are obtained for an infinite spin spiral and numerical results are obtained for realistic domain wall profiles. The adiabatic limit describes conduction electron spins that follow the s…
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We report quantum and semi-classical calculations of spin current and spin-transfer torque in a free-electron Stoner model for systems where the magnetization varies continuously in one dimension.Analytic results are obtained for an infinite spin spiral and numerical results are obtained for realistic domain wall profiles. The adiabatic limit describes conduction electron spins that follow the sum of the exchange field and an effective, velocity-dependent field produced by the gradient of the magnetization in the wall. Non-adiabatic effects arise for short domain walls but their magnitude decreases exponentially as the wall width increases. Our results cast doubt on the existence of a recently proposed non-adiabatic contribution to the spin-transfer torque due to spin flip scattering.
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Submitted 10 January, 2006; v1 submitted 9 January, 2006;
originally announced January 2006.
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Macrospin Models of Spin Transfer Dynamics
Authors:
Jiang Xiao,
A. Zangwill,
M. D. Stiles
Abstract:
The current-induced magnetization dynamics of a spin valve are studied using a macrospin (single domain) approximation and numerical solutions of a generalized Landau-Lifshitz-Gilbert equation. For the purpose of quantitative comparison with experiment [Kiselev {\it et al.} Nature {\bf 425}, 380 (2003)], we calculate the resistance and microwave power as a function of current and external field…
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The current-induced magnetization dynamics of a spin valve are studied using a macrospin (single domain) approximation and numerical solutions of a generalized Landau-Lifshitz-Gilbert equation. For the purpose of quantitative comparison with experiment [Kiselev {\it et al.} Nature {\bf 425}, 380 (2003)], we calculate the resistance and microwave power as a function of current and external field including the effects of anisotropies, dam**, spin-transfer torque, thermal fluctuations, spin-pum**, and incomplete absorption of transverse spin current. While many features of experiment appear in the simulations, there are two significant discrepancies: the current dependence of the precession frequency and the presence/absence of a microwave quiet magnetic phase with a distinct magnetoresistance signature. Comparison is made with micromagnetic simulations designed to model the same experiment.
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Submitted 6 April, 2005;
originally announced April 2005.
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Boltzmann Test of Slonczewski's Theory of Spin Transfer Torque
Authors:
Jiang Xiao,
A. Zangwill,
M. D. Stiles
Abstract:
We use a matrix Boltzmann equation formalism to test the accuracy of Slonczewski's theory of spin-transfer torque in thin-film heterostructures where a non-magnetic spacer layer separates two non-collinear ferromagnetic layers connected to non-magnetic leads. When applicable, the model predictions for the torque as a function of the angle between the two ferromagnets agree extremely well with th…
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We use a matrix Boltzmann equation formalism to test the accuracy of Slonczewski's theory of spin-transfer torque in thin-film heterostructures where a non-magnetic spacer layer separates two non-collinear ferromagnetic layers connected to non-magnetic leads. When applicable, the model predictions for the torque as a function of the angle between the two ferromagnets agree extremely well with the torques computed from a Boltzmann equation calculation. We focus on asymmetric structures (where the two ferromagnets and two leads are not identical) where the agreement pertains to a new analytic formula for the torque derived by us using Slonczewski's theory. In almost all cases, we can predict the correct value of the model parameters directly from the geometric and transport properties of the multilayer. For some asymmetric geometries, we predict a new mode of stable precession that does not occur for the symmetric case studied by Slonczewski.
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Submitted 21 July, 2004;
originally announced July 2004.
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Theory of Current-Induced Magnetization Precession
Authors:
M. D. Stiles,
Jiang Xiao,
A. Zangwill
Abstract:
We solve appropriate drift-diffusion and Landau-Lifshitz-Gilbert equations to demonstrate that unpolarized current flow from a non-magnet into a ferromagnet can produce a precession-type instability of the magnetization. The fundamental origin of the instability is the difference in conductivity between majority spins and minority spins in the ferromagnet. This leads to spin accumulation and spi…
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We solve appropriate drift-diffusion and Landau-Lifshitz-Gilbert equations to demonstrate that unpolarized current flow from a non-magnet into a ferromagnet can produce a precession-type instability of the magnetization. The fundamental origin of the instability is the difference in conductivity between majority spins and minority spins in the ferromagnet. This leads to spin accumulation and spin currents that carry angular momentum across the interface. The component of this angular momentum perpendicular to the magnetization drives precessional motion that is opposed by Gilbert dam**. Neglecting magnetic anisotropy and magnetostatics, our approximate analytic and exact numerical solutions using realistic values for the material parameters show (for both semi-infinite and thin film geometries) that a linear instability occurs when both the current density and the excitation wave vector parallel to the interface are neither too small nor too large. For many aspects of the problem, the variation of the magnetization in the direction of the current flows makes an important contribution.
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Submitted 11 September, 2003;
originally announced September 2003.
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Anatomy of Spin-Transfer Torque
Authors:
M. D. Stiles,
A. Zangwill
Abstract:
Spin-transfer torques occur in magnetic heterostructures because the transverse component of a spin current that flows from a non-magnet into a ferromagnet is absorbed at the interface. We demonstrate this fact explicitly using free electron models and first principles electronic structure calculations for real material interfaces. Three distinct processes contribute to the absorption: (1) spin-…
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Spin-transfer torques occur in magnetic heterostructures because the transverse component of a spin current that flows from a non-magnet into a ferromagnet is absorbed at the interface. We demonstrate this fact explicitly using free electron models and first principles electronic structure calculations for real material interfaces. Three distinct processes contribute to the absorption: (1) spin-dependent reflection and transmission; (2) rotation of reflected and transmitted spins; and (3) spatial precession of spins in the ferromagnet. When summed over all Fermi surface electrons, these processes reduce the transverse component of the transmitted and reflected spin currents to nearly zero for most systems of interest. Therefore, to a good approximation, the torque on the magnetization is proportional to the transverse piece of the incoming spin current.
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Submitted 22 February, 2002;
originally announced February 2002.
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Level Set Approach to Reversible Epitaxial Growth
Authors:
M. Petersen,
C. Ratsch,
R. E. Caflisch,
A. Zangwill
Abstract:
We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical nucleus. Excellent quantitative agreement is obtained with kinetic Monte Carlo simulations for island densities and island size distributions in the submonolay…
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We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical nucleus. Excellent quantitative agreement is obtained with kinetic Monte Carlo simulations for island densities and island size distributions in the submonolayer regime.
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Submitted 14 November, 2001;
originally announced November 2001.
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Non-collinear spin transfer in Co/Cu/Co multilayers
Authors:
M. D. Stiles,
A. Zangwill
Abstract:
This paper has two parts. The first part uses a single point of view to discuss the reflection and averaging mechanisms of spin-transfer between current-carrying electrons and the ferromagnetic layers of magnetic/non-magnetic heterostructures. The second part incorporates both effects into a matrix Boltzmann equation and reports numerical results for current polarization, spin accumulation, magn…
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This paper has two parts. The first part uses a single point of view to discuss the reflection and averaging mechanisms of spin-transfer between current-carrying electrons and the ferromagnetic layers of magnetic/non-magnetic heterostructures. The second part incorporates both effects into a matrix Boltzmann equation and reports numerical results for current polarization, spin accumulation, magnetoresistance, and spin-transfer torques for Co/Cu/Co multilayers. When possible, the results are compared quantitatively with relevant experiments.
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Submitted 12 October, 2001;
originally announced October 2001.
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Convective instability on a crystal surface
Authors:
Navot Israeli,
Daniel Kandel,
Michael F. Schatz,
Andrew Zangwill
Abstract:
The distinction between absolute and convective instabilities is well known in the context of hydrodynamics and plasma physics. In this Letter, we examine an epitaxial crystal growth model from this point of view and show that a strain-induced step bunching instability can be convective. Using analytic stability theory and numerical simulations, we study the response of the crystal surface to an…
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The distinction between absolute and convective instabilities is well known in the context of hydrodynamics and plasma physics. In this Letter, we examine an epitaxial crystal growth model from this point of view and show that a strain-induced step bunching instability can be convective. Using analytic stability theory and numerical simulations, we study the response of the crystal surface to an inhomogeneous deposition flux that launches impulsive and time-periodic perturbations to a uniform array of steps. The results suggest a new approach to morphological patterning.
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Submitted 5 October, 2000;
originally announced October 2000.
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Epitaxial Growth Kinetics with Interacting Coherent Islands
Authors:
Hari M. Koduvely,
Andrew Zangwill
Abstract:
The Stranski-Krastanov growth kinetics of undislocated (coherent) 3-dimensional islands is studied with a self-consistent mean field rate theory that takes account of elastic interactions between the islands. The latter are presumed to facilitate the detachment of atoms from the islands with a consequent decrease in their average size. Semi-quantitative agreement with experiment is found for the…
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The Stranski-Krastanov growth kinetics of undislocated (coherent) 3-dimensional islands is studied with a self-consistent mean field rate theory that takes account of elastic interactions between the islands. The latter are presumed to facilitate the detachment of atoms from the islands with a consequent decrease in their average size. Semi-quantitative agreement with experiment is found for the time evolution of the total island density and the mean island size. When combined with scaling ideas, these results provide a natural way to understand the often-observed initial increase and subsequent decrease in the width of the coherent island size distribution.
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Submitted 22 February, 1999;
originally announced February 1999.
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Thickness evolution of coercivity in ultrathin magnetic films
Authors:
R. A. Hyman,
A. Zangwill,
M. D. Stiles
Abstract:
The thickness evolution of in-plane magnetization reversal in ultrathin films is studied with a theoretical model that takes account of surface roughness typical of epitaxial growth. Guided by Néel's model, step edge sites of monolayer-height islands are assigned a two-fold anisotropy in addition to a four-fold anisotropy at all sites. Coercivity is found to depend essentially on both the film t…
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The thickness evolution of in-plane magnetization reversal in ultrathin films is studied with a theoretical model that takes account of surface roughness typical of epitaxial growth. Guided by Néel's model, step edge sites of monolayer-height islands are assigned a two-fold anisotropy in addition to a four-fold anisotropy at all sites. Coercivity is found to depend essentially on both the film thickness and the partial coverage of the topmost layer. Its qualitative features are determined primarily by sample geometry and the size of the step anisotropy compared to the domain wall energy. Magnetostatic interactions change the results quantitatively, but not qualitatively. Their effect is understood by comparing calculations with and without their inclusion.
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Submitted 27 August, 1998;
originally announced August 1998.
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Magnetic Reversal on Vicinal Surfaces
Authors:
R. A. Hyman,
A. Zangwill,
M. D. Stiles
Abstract:
We present a theoretical study of in-plane magnetization reversal for vicinal ultrathin films using a one-dimensional micromagnetic model with nearest-neighbor exchange, four-fold anisotropy at all sites, and two-fold anisotropy at step edges. A detailed "phase diagram" is presented that catalogs the possible shapes of hysteresis loops and reversal mechanisms as a function of step anisotropy str…
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We present a theoretical study of in-plane magnetization reversal for vicinal ultrathin films using a one-dimensional micromagnetic model with nearest-neighbor exchange, four-fold anisotropy at all sites, and two-fold anisotropy at step edges. A detailed "phase diagram" is presented that catalogs the possible shapes of hysteresis loops and reversal mechanisms as a function of step anisotropy strength and vicinal terrace length. The steps generically nucleate magnetization reversal and pin the motion of domain walls. No sharp transition separates the cases of reversal by coherent rotation and reversal by depinning of a ninety degree domain wall from the steps. Comparison to experiment is made when appropriate.
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Submitted 1 April, 1998;
originally announced April 1998.
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Submonolayer Epitaxy Without A Critical Nucleus
Authors:
C. Ratsch,
P. Šmilauer,
A. Zangwill,
D. D. Vvedensky
Abstract:
The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find…
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The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find that the ratio of the dimer dissociation rate to the rate of adatom capture by dimers uniquely indexes both the island size distribution scaling function and the dependence of the island density on the flux and the substrate temperature. Effective pair-bond model parameters are found that yield excellent quantitative agreement with scaling functions measured for Fe/Fe(001).
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Submitted 21 March, 1995;
originally announced March 1995.
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Scaling of Heteroepitaxial Island Sizes
Authors:
C. Ratsch,
A. Zangwill,
P. Šmilauer
Abstract:
Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $Θ$ in the submonolayer aggregation regime of epitaxial growth. Misfit promotes the detachment of atoms from the perimeter of large pseudomorphic islands and thus favors their dissolution into smaller islands th…
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Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $Θ$ in the submonolayer aggregation regime of epitaxial growth. Misfit promotes the detachment of atoms from the perimeter of large pseudomorphic islands and thus favors their dissolution into smaller islands that relieve strain more efficiently. The number density of islands composed of $s$ atoms exhibits scaling in the form \mbox{$N_s(Θ) \sim Θ/ \langle s \rangle^2 \, g(s/\langle s \rangle$)} where $\langle s \rangle$ is the average island size. Unlike the case of homoepitaxy, a rate equation theory based on this observation leads to qualitatively different behavior than observed in the simulations.
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Submitted 15 June, 1994;
originally announced June 1994.