Showing 1–9 of 9 results for author: Zangiabadi, A

Interplay between local moment and itinerant magnetism in the layered metallic antiferromagnet TaFe$_{1.14}$Te$_3$

Authors: Sae Young Han, Evan J. Telford, Asish K. Kundu, Sylvia J. Bintrim, Simon Turkel, Ren A. Wiscons, Amirali Zangiabadi, Eun-Sang Choi, Tai-De Li, Michael L. Steigerwald, Timothy C. Berkelbach, Abhay N. Pasupathy, Cory R. Dean, Colin Nuckolls, Xavier Roy

Abstract: Two-dimensional (2D) antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many available bulk materials from which 2D antiferromagnets are isolated are limited by their sensitivity to air, low ordering temperatures, and insulating transport properties. TaFe$_{1+y}$Te$_3$ offers unique opportunities to address these challenges with increas… ▽ More Two-dimensional (2D) antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many available bulk materials from which 2D antiferromagnets are isolated are limited by their sensitivity to air, low ordering temperatures, and insulating transport properties. TaFe$_{1+y}$Te$_3$ offers unique opportunities to address these challenges with increased air stability, metallic transport properties, and robust antiferromagnetic order. Here, we synthesize TaFe$_{1+y}$Te$_3$ ($y$ = 0.14), identify its structural, magnetic, and electronic properties, and elucidate the relationships between them. Axial-dependent high-field magnetization measurements on TaFe$_{1.14}$Te$_3$ reveal saturation magnetic fields ranging between 27-30 T with a saturation magnetic moment of 2.05-2.12 $μ_B$. Magnetotransport measurements confirm TaFe$_{1.14}$Te$_3$ is metallic with strong coupling between magnetic order and electronic transport. Angle-resolved photoemission spectroscopy measurements across the magnetic transition uncover a complex interplay between itinerant electrons and local magnetic moments that drives the magnetic transition. We further demonstrate the ability to isolate few-layer sheets of TaFe$_{1.14}$Te$_3$ through mechanical exfoliation, establishing TaFe$_{1.14}$Te$_3$ as a potential platform for 2D spintronics based on metallic layered antiferromagnets. △ Less

Submitted 3 July, 2023; originally announced July 2023.

Comments: 30 pages, 5 main figures, 23 supporting figures, and 3 supporting tables

Atomically imprinted graphene plasmonic cavities

Authors: Brian S. Y. Kim, Aaron J. Sternbach, Min Sup Choi, Zhiyuan Sun, Francesco L. Ruta, Yinming Shao, Alexander S. McLeod, Lin Xiong, Yinan Dong, Anjaly Rajendran, Song Liu, Ankur Nipane, Sang Hoon Chae, Amirali Zangiabadi, Xiaodong Xu, Andrew J. Millis, P. James Schuck, Cory. R. Dean, James C. Hone, D. N. Basov

Abstract: Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene p… ▽ More Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene plasmonic structures using oxidation-activated charge transfer (OCT). We cover graphene with a monolayer of WSe$_2$, which is subsequently oxidized into high work-function WOx to activate charge transfer. Nano-infrared imaging reveals low-loss plasmon polaritons at the WOx/graphene interface. We insert WSe$_2$ spacers to precisely control the OCT-induced carrier density and achieve a near-intrinsic quality factor of plasmons. Finally, we imprint canonical plasmonic cavities exhibiting laterally abrupt do** profiles with single-digit nanoscale precision via programmable OCT. Specifically, we demonstrate technologically appealing but elusive plasmonic whispering-gallery resonators based on free-standing graphene encapsulated in WOx. Our results open avenues for novel quantum photonic architectures incorporating two-dimensional materials. △ Less

Submitted 25 June, 2022; originally announced June 2022.

Comments: 17 pages, 4 figures

Tunneling Spectroscopy of Two-Dimensional Materials Based on Via Contacts

Authors: Qingrui Cao, Evan J. Telford, Avishai Benyamini, Ian Kennedy, Amirali Zangiabadi, Kenji Watanabe, Takashi Taniguchi, Cory R. Dean, Benjamin M. Hunt

Abstract: We introduce a novel planar tunneling architecture for van der Waals heterostructures based on via contacts, namely metallic contacts embedded into through-holes in hexagonal boron nitride ($h$BN). We use the via-based tunneling method to study the single-particle density of states of two different two-dimensional (2D) materials, NbSe$_2$ and graphene. In NbSe$_2$ devices, we characterize the barr… ▽ More We introduce a novel planar tunneling architecture for van der Waals heterostructures based on via contacts, namely metallic contacts embedded into through-holes in hexagonal boron nitride ($h$BN). We use the via-based tunneling method to study the single-particle density of states of two different two-dimensional (2D) materials, NbSe$_2$ and graphene. In NbSe$_2$ devices, we characterize the barrier strength and interface disorder for barrier thicknesses of 0, 1 and 2 layers of $h$BN and study the dependence on tunnel-contact area down to $(44 \pm 14)^2 $ nm$^2$. For 0-layer $h$BN devices, we demonstrate a crossover from diffusive to point contacts in the small-contact-area limit. In graphene, we show that reducing the tunnel barrier thickness and area can suppress effects due to phonon-assisted tunneling and defects in the $h$BN barrier. This via-based architecture overcomes limitations of other planar tunneling designs and produces high-quality, ultra-clean tunneling structures from a variety of 2D materials. △ Less

Submitted 1 November, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Epitaxial metals for interconnects beyond Cu

Authors: Katayun Barmak, Sameer Ezzat, Ryan Gusle, Atharv Jog, Sit Kerdsongpanya, Asim Khanya, Erik Milosevic, William Richardson, Kadir Sentosun, Amirali Zangiabadi, Daniel Gall, William E. Kaden, Eduardo R. Mucciolo, Patrick K. Schelling, Alan C. West, Kevin R. Coffey

Abstract: The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron… ▽ More The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron microscopy evidences threading and misfit dislocations, stacking faults and deformation twins. Exposure of Co films to ambient air, and the deposition of oxide layers of SiO2, MgO, Al2O3 and Cr2O3 on Ru degrade the surface specularity of the metallic layer. However, for the Ru films, annealing in a reducing ambient restores the surface specularity. Epitaxial electrochemical deposition of Co on epitaxially-deposited Ru layers is used as an example to demonstrate the feasibility of generating epitaxial interconnects for back-end of line structures. An electron transport model based on a tight-binding approach is described, with Ru interconnects used an example. The model allows conductivity to be computed for structures comprising large ensembles of atoms (10^5-10^6), scales linearly with system size and can also incorporate defects. △ Less

Submitted 2 April, 2020; originally announced April 2020.

Comments: 37 pages, 10 figures, to appear in the Journal of Vacuum Science & Technology A

Journal ref: J. Vac. Sc. Technol. 38, 033406 (2020)

Do**-induced superconductivity in the van der Waals superatomic crystal Re$_6$Se$_8$Cl$_2$

Authors: Evan J. Telford, Jake C. Russell, Joshua R. Swann, Brandon Fowler, Xiaoman Wang, Kihong Lee, Amirali Zangiabadi, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Patrick Batail, Xiaoyang Zhu, Jonathan A. Malen, Cory R. Dean, Xavier Roy

Abstract: Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic phenomena, such as superconductivity and magnetism that can be revealed through do**$^{5-10}$. Low-dimensional superatomic crystals hold great promise as electroni… ▽ More Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic phenomena, such as superconductivity and magnetism that can be revealed through do**$^{5-10}$. Low-dimensional superatomic crystals hold great promise as electronic components$^{11,12}$, enabling these properties to be applied to nanocircuits, but the impact of do** in such compounds remains unexplored. Here we report the electrical transport properties of Re$_6$Se$_8$Cl$_2$, a two-dimensional superatomic semiconductor$^{13,14}$. Using an in situ current annealing technique, we find that this compound can be n-doped through Cl dissociation, drastically altering the transport behaviour from semiconducting to metallic and giving rise to superconductivity below $\sim$ 9 K. This work is the first example of superconductivity in a van der Waals (vdW) superatomic crystal; more broadly, it establishes a new chemical strategy to manipulate the electronic properties of vdW materials with labile ligands. △ Less

Submitted 25 June, 2019; originally announced June 2019.

Measurement of spin mixing conductance in Ni$_{81}$Fe$_{19}$/$α$-W and Ni$_{81}$Fe$_{19}$/$β$-W heterostrucutures via ferromagnetic resonance

Authors: W. Cao, J. Liu, A. Zangiabadi, K. Barmak, W. E. Bailey

Abstract: We present measurements of interfacial Gilbert dam** due to the spin pum** effect in Ni$_{81}$Fe$_{19}$/W heterostructures. Measurements were compared for heterostructures in which the crystallographic phase of W, either $α$(bcc)-W or $β$(A15)-W, was enriched through deposition conditions and characterized using X-ray diffraction (XRD) and high-resolution cross-sectional transmission electron… ▽ More We present measurements of interfacial Gilbert dam** due to the spin pum** effect in Ni$_{81}$Fe$_{19}$/W heterostructures. Measurements were compared for heterostructures in which the crystallographic phase of W, either $α$(bcc)-W or $β$(A15)-W, was enriched through deposition conditions and characterized using X-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM). Single phase Ni$_{81}$Fe$_{19}$/$α$-W heterostructures could be realized, but heterostructures with $β$-W were realized as mixed $α$-$β$ phase. The spin mixing conductances (SMC) for W at interfaces with Ni$_{81}$Fe$_{19}$ were found to be significantly lower than those for similarly heavy metals such as Pd and Pt, but comparable to those for Ta, and independent of enrichment in the $β$ phase. △ Less

Submitted 4 September, 2019; v1 submitted 11 April, 2019; originally announced April 2019.

Journal ref: Journal of Applied Physics 126, 043902 (2019)

Scalable, "Dip-and-dry" Fabrication of a Wide-Angle Plasmonic Selective Absorber for High-efficiency Solar-Thermal Energy Conversion

Authors: Jyotirmoy Mandal, Derek Wang, Adam C. Overvig, Norman N. Shi, Daniel Paley, Amirali Zangiabadi, Qian Cheng, Katayun Barmak, Nanfang Yu, Yuan Yang

Abstract: A galvanic displacement reaction-based, room-temperature "dip-and-dry" technique is demonstrated for fabricating selectively solar-absorbing plasmonic nanostructure-coated foils (PNFs). The technique, which allows for facile tuning of the PNFs' spectral reflectance to suit different radiative and thermal environments, yields PNFs which exhibit excellent, wide-angle solar absorptance (0.96 at 15°,… ▽ More A galvanic displacement reaction-based, room-temperature "dip-and-dry" technique is demonstrated for fabricating selectively solar-absorbing plasmonic nanostructure-coated foils (PNFs). The technique, which allows for facile tuning of the PNFs' spectral reflectance to suit different radiative and thermal environments, yields PNFs which exhibit excellent, wide-angle solar absorptance (0.96 at 15°, to 0.97 at 35°, to 0.79 at 80°) and low hemispherical thermal emittance (0.10) without the aid of antireflection coatings. The thermal emittance is on par with those of notable selective solar absorbers (SSAs) in the literature, while the wide-angle solar absorptance surpasses those of previously reported SSAs with comparable optical selectivities. In addition, the PNFs show promising mechanical and thermal stabilities at temperatures of up to 200°C. Along with the performance of the PNFs, the simplicity, inexpensiveness and environment-friendliness of the "dip-and-dry" technique makes it an appealing alternative to current methods for fabricating selective solar absorbers. △ Less

Submitted 13 September, 2018; originally announced September 2018.

Journal ref: Advanced Materials, 2017, 29, 1702156

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

Authors: D. Edelberg, D. Rhodes, A. Kerelsky, B. Kim, J. Wang, A. Zangiabadi, C. Kim, A. Abhinandan, J. Ardelean, M. Scully, D. Scullion, L. Embon, I. Zhang, R. Zu, Elton J. G. Santos, L. Balicas, C. Marianetti, K. Barmak, X. -Y. Zhu, J. Hone, A. N. Pasupathy

Abstract: Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transpo… ▽ More Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency. △ Less

Submitted 30 April, 2018; originally announced May 2018.

Journal ref: Nano Lett. 2019, 19, 7, 4371-4379

Via Method for Lithography Free Contact and Preservation of 2D Materials

Authors: Evan J. Telford, Avishai Benyamini, Daniel Rhodes, Da Wang, Younghun Jung, Amirali Zangiabadi, Kenji Watanabe, Takashi Taniguchi, Shuang Jia, Katayun Barmak, Abhay N. Pasupathy, Cory R. Dean, James Hone

Abstract: Atomically thin 2D materials span the common components of electronic circuits as metals, semi-conductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing challenge in the field is to incorporate these 2D materials into multi-layer hetero-structures with robust electrical contacts while preventing disorder and degradatio… ▽ More Atomically thin 2D materials span the common components of electronic circuits as metals, semi-conductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing challenge in the field is to incorporate these 2D materials into multi-layer hetero-structures with robust electrical contacts while preventing disorder and degradation. In particular, preserving and studying air-sensitive 2D materials has presented a significant challenge since they readily oxidize under atmospheric conditions. We report a new technique for contacting 2D materials, in which metal via contacts are integrated into flakes of insulating hexagonal boron nitride, and then placed onto the desired conducting 2D layer, avoiding direct lithographic patterning onto the 2D conductor. The metal contacts are planar with the bottom surface of the boron nitride and form robust contacts to multiple 2D materials. These structures protect air-sensitive 2D materials for months with no degradation in performance. This via contact technique will provide the capability to produce atomic printed circuit boards that can form the basis of more complex multi-layer heterostructures. △ Less

Submitted 6 February, 2018; originally announced February 2018.

Comments: 16 pages, 4 figures