Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
Authors:
G. Andrini,
G. Zanelli,
S. Ditalia Tchernij,
E. Corte,
E. Nieto Hernandez,
A. Verna,
M. Cocuzza,
E. Bernardi,
S. Virzì,
P. Traina,
I. P. Degiovanni,
M. Genovese,
P. Olivero,
J. Forneris
Abstract:
The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable th…
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The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the efficient activation of G centers in high-purity silicon substrates upon ns pulsed laser annealing. The proposed method enables the non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.
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Submitted 10 April, 2024; v1 submitted 20 April, 2023;
originally announced April 2023.
