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Showing 1–3 of 3 results for author: Zalusky, S

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  1. arXiv:1203.0668  [pdf, other

    hep-ex

    A Study of Heavy Higgs Properties at a Multi-TeV e+e- Collider

    Authors: Marco Battaglia, Frederik Bogert, Arnaud Ferrari, Johan Relefors, Sarah Zalusky

    Abstract: The precise determination of the masses of the neutral and charged heavy Higgs bosons is a crucial input for the study of Supersymmetry and its relation with cosmology through dark matter. This paper presents a study of e+e- -> HA and H+H- production at sqrts=3 TeV. The analysis is performed with full simulation and reconstruction accounting for beamstrahlung effects and the overlay of gamma gamma… ▽ More

    Submitted 3 March, 2012; originally announced March 2012.

    Comments: 6 pages, 1 figure, to appear in the Proceedings of the International Workshop on Future Linear Colliders LCWS2011

  2. Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

    Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano, Sarah Zalusky

    Abstract: This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single poi… ▽ More

    Submitted 4 March, 2011; originally announced March 2011.

    Comments: 15 pages, 11 figures, submitted to Nuclear Instruments and Methods A

    Journal ref: Nuclear Inst. and Methods in Physics Research, A 650 (2011), pp. 55-58

  3. A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

    Authors: Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Piero Giubilato, Tae Sung Kim, Serena Mattiazzo, Velimir Radmilovic, Sarah Zalusky

    Abstract: Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictio… ▽ More

    Submitted 17 November, 2008; originally announced November 2008.

    Comments: 16 pages, 9 figures, submitted to Nucl. Instr and Meth A

    Journal ref: Nucl.Instrum.Meth.A598:642-649,2009