Showing 1–5 of 5 results for author: Zajkowska, W

Structural pathways for ultrafast melting of optically excited thin polycrystalline Palladium films

Authors: Jerzy Antonowicz, Adam Olczak, Klaus Sokolowski-Tinten, Peter Zalden, Igor Milov, Przemysław Dzięgielewski, Christian Bressler, Henry N. Chapman, Michał Chojnacki, Piotr Dłużewski, Angel Rodriguez-Fernandez, Krzysztof Fronc, Wojciech Gawełda, Konstantinos Georgarakis, Alan L. Greer, Iwanna Jacyna, Robbert W. E. van de Kruijs, Radosław Kamiński, Dmitry Khakhulin, Dorota Klinger, Katarzyna M. Kosyl, Katharina Kubicek, Kirill P. Migdal, Roman Minikayev, Nikolaos T. Panagiotopoulos , et al. (6 additional authors not shown)

Abstract: Due to its extremely short timescale, the non-equilibrium melting of metals is exceptionally difficult to probe experimentally. The knowledge of melting mechanisms is thus based mainly on the results of theoretical predictions. This work reports on the investigation of ultrafast melting of thin polycrystalline Pd films studied by optical laser pump - X-ray free-electron laser probe experiments and… ▽ More Due to its extremely short timescale, the non-equilibrium melting of metals is exceptionally difficult to probe experimentally. The knowledge of melting mechanisms is thus based mainly on the results of theoretical predictions. This work reports on the investigation of ultrafast melting of thin polycrystalline Pd films studied by optical laser pump - X-ray free-electron laser probe experiments and molecular-dynamics simulations. By acquiring X-ray diffraction snapshots with sub-picosecond resolution, we capture the sample's atomic structure during its transition from the crystalline to the liquid state. Bridging the timescales of experiments and simulations allows us to formulate a realistic microscopic picture of melting. We demonstrate that the existing models of strongly non-equilibrium melting, developed for systems with relatively weak electron-phonon coupling, remain valid even for ultrafast heating rates achieved in femtosecond laser-excited Pd. Furthermore, we highlight the role of pre-existing and transiently generated crystal defects in the transition to the liquid state. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Comments: main manuscript 33 pages, 9 figures; supplemental material 19 pages, 13 figures - all in one file

ZnO nanowires grown on Al2O3-ZnAl2O4 nanostructure using solid-vapor mechanism

Authors: Wiktoria Zajkowska, Jakub Turczynski, Boguslawa Kurowska, Henryk Teisseyre, Krzysztof Fronc, Jerzy Dabrowski, Slawomir Kret

Abstract: We present Al2O3-ZnAl2O4-ZnO nanostructure, which could be a prominent candidate for optoelectronics, mechanical and sensing applications. While ZnO and ZnAl2O4 composites are mostly synthesized by sol-gel technique, we propose a solid-vapor growth mechanism. To produce Al2O3-ZnAl2O4-ZnO nanostructure, we conduct ZnO:C powder heating resulting in ZnO nanowires (NWs) growth on sapphire substrate an… ▽ More We present Al2O3-ZnAl2O4-ZnO nanostructure, which could be a prominent candidate for optoelectronics, mechanical and sensing applications. While ZnO and ZnAl2O4 composites are mostly synthesized by sol-gel technique, we propose a solid-vapor growth mechanism. To produce Al2O3-ZnAl2O4-ZnO nanostructure, we conduct ZnO:C powder heating resulting in ZnO nanowires (NWs) growth on sapphire substrate and ZnAl2O4 spinel layer at the interface. The nanostructure was examined with Scanning Electron Microscopy (SEM) method. Focused Ion Beam (FIB) technique enabled us to prepare a lamella for Transmission Electron Microscopy (TEM) imaging. TEM examination revealed high crystallographic quality of both spinel and NW structure. Epitaxial relationships of Al2O3-ZnAl2O4 and ZnAl2O4-ZnO are given. △ Less

Submitted 24 May, 2023; originally announced May 2023.

Comments: Conference: 13th Polish-Japanese Joint Seminar on Micro and Nano Analysis

Nearly Lattice Matched GaAs/Pb(1-x)Sn(x)Te Core-Shell Nanowires

Authors: Sania Dad, Piotr Dziawa, Wiktoria Zajkowska, Sławomir Kret, Mirosław Kozłowski, Maciej Wójcik, Janusz Sadowski

Abstract: We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch along the nanowire axis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to the topological crystallin… ▽ More We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch along the nanowire axis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to the topological crystalline insulator properties for some critical concentrations of Sn (x >= 0.4). The IV-VI shells are grown with different compositions spanning from binary SnTe, through Pb(1-x)Sn(x)Te with decreasing x value down to binary PbTe (x = 0). The samples are analyzed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100)Pb(1-x)Sn(x)Te on the sidewalls of wurtzite GaAs NWs. △ Less

Submitted 15 November, 2022; originally announced November 2022.

Comments: 24 pages, 5 figures

Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates

Authors: Janusz Sadowski, Jarosław Z. Domagała, Wiktoria Zajkowska, Sławomir Kret, Bartłomiej Seredyński, Marta Gryglas-Borysiewicz, Zuzanna Ogorzałek, Rafał Bożek, Wojciech Pacuski

Abstract: Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001)… ▽ More Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001) substrate and TaAs epilayer no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected with transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in-situ reflection high energy electron diffraction images indicates that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure. △ Less

Submitted 4 September, 2022; v1 submitted 1 September, 2022; originally announced September 2022.

Comments: 23 pages, 6 figures

Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$

Authors: Bartłomiej Seredyński, Zuzanna Ogorzałek, Wiktoria Zajkowska, Rafał Bożek, Mateusz Tokarczyk, Jan Suffczyński, Sławomir Kret, Janusz Sadowski, Marta Gryglas-Borysiewicz, Wojciech Pacuski

Abstract: The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearl… ▽ More The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearly lattice matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunnelling microscopy. Surface coverage and atomic scale order is evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that NiTe$_{2}$ layers are metallic, with the Hall concentration of $10^{20}$cm$^{-3}$ to $10^{23}$cm$^{-3}$, depending on the growth conditions. △ Less

Submitted 16 August, 2021; originally announced August 2021.

Journal ref: Cryst. Growth Des. 21, 5773 (2021)