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Quantum embedding study of strain and charge induced Stark effects on the NV$^{-}$ center in diamond
Authors:
Gabriel I. López-Morales,
Joanna M. Zajac,
Johannes Flick,
Carlos A. Meriles,
Cyrus E. Dreyer
Abstract:
The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain long…
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The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain longitudinal to the axis of NV$^{-}$ shifts the excited states in energy, while strain with a component transverse to the NV axis splits the degeneracies of the $^{3}E$ and $^{1}E$ states. The largest effects are for the optically relevant $^{3}E$ manifold, which splits into $E_{x}$ and $E_{y}$ with transverse strain. From these responses we extract strain susceptibilities for the $E_{x/y}$ states within the quasi-linear regime. Additionally, we study the many-body dipole matrix elements of the NV$^{-}$ and find a permanent dipole 1.64 D at zero strain, which is $\sim 30 \%$ smaller than that obtained from recent density functional theory calculations. We also determine the transition dipole between the $E_{x}$ and $E_{y}$ and how it evolves with strain.
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Submitted 11 June, 2024;
originally announced June 2024.
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Microscopic processes during ultra-fast laser generation of Frenkel defects in diamond
Authors:
Benjamin Griffiths,
Andrew Kirkpatrick,
Shannon S. Nicley,
Rajesh L. Patel,
Joanna M. Zajac,
Gavin W. Morley,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Engineering single atomic defects into wide bandgap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy which is often a constituent part of more complex defects such as the nitrogen-vacancy (NV) centre in diamond, therefore an understanding of the formation mecha…
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Engineering single atomic defects into wide bandgap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy which is often a constituent part of more complex defects such as the nitrogen-vacancy (NV) centre in diamond, therefore an understanding of the formation mechanisms and precision engineering of vacancies is desirable. We present a theoretical and experimental study into the ultra-fast laser generation of vacancy-interstitial pairs (Frenkel defects) in diamond. The process is described by a set of coupled rate equations of the pulsed laser interaction with the material and of the non-equilibrium dynamics of charge carriers during and in the wake of the pulse. We find that a model for Frenkel defect generation via the recombination of a bound biexciton as the electron plasma cools provides good agreement with experimental data, reproducing an effective non-linearity of $\sim$ 40 for Frenkel defect generation with respect to laser pulse energy.
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Submitted 25 May, 2021;
originally announced May 2021.
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The Tierras Observatory: An ultra-precise photometer to characterize nearby terrestrial exoplanets
Authors:
Juliana García-Mejía,
David Charbonneau,
Daniel Fabricant,
Jonathan M. Irwin,
Robert Fata,
Joseph M. Zajac,
Peter E. Doherty
Abstract:
We report on the status of the Tierras Observatory, a refurbished 1.3-m ultra-precise fully-automated photometer located at the F. L. Whipple Observatory atop Mt. Hopkins, Arizona. Tierras is designed to limit systematic errors, notably precipitable water vapor (PWV), to 250 ppm, enabling the characterization of terrestrial planet transits orbiting $< 0.3 \, R_{\odot}$ stars, as well as the potent…
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We report on the status of the Tierras Observatory, a refurbished 1.3-m ultra-precise fully-automated photometer located at the F. L. Whipple Observatory atop Mt. Hopkins, Arizona. Tierras is designed to limit systematic errors, notably precipitable water vapor (PWV), to 250 ppm, enabling the characterization of terrestrial planet transits orbiting $< 0.3 \, R_{\odot}$ stars, as well as the potential discovery of exo-moons and exo-rings. The design choices that will enable our science goals include: a four-lens focal reducer and field-flattener to increase the field-of-view of the telescope from a $11.94'$ to a $0.48^{\circ}$ side; a custom narrow bandpass ($40.2$ nm FWHM) filter centered around $863.5$ nm to minimize PWV errors known to limit ground-based photometry of red dwarfs; and a deep-depletion $4K \times 4K$ CCD with a 300ke-full well and QE$>85\%$ in our bandpass, operating in frame transfer mode. We are also pursuing the design of a set of baffles to minimize the significant amount of scattered light reaching the image plane. Tierras will begin science operations in early 2021.
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Submitted 17 December, 2020;
originally announced December 2020.
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Indistinguishable single photons with flexible electronic triggering
Authors:
Adetunmise C. Dada,
Ted S. Santana,
Ralph N. E. Malein,
Antonios Koutroumanis,
Yong Ma,
Joanna M. Zajac,
Ju Y. Lim,
** D. Song,
Brian D. Gerardot
Abstract:
A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum c…
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A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum circuit or network will trigger the generation of an indistinguishable photon. Further, operating the photon source up to the limit imposed by its lifetime is desirable. Here, we report on the application of a true on-demand approach in which we can electronically trigger the precise arrival time of a single photon as well as control the excitation pulse duration based on resonance fluorescence from a single InAs/GaAs quantum dot. We investigate in detail the effect of the finite duration of an excitation $π$ pulse on the degree of photon antibunching. Finally, we demonstrate that highly indistinguishable single photons can be generated using this on-demand approach, enabling maximum flexibility for future applications.
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Submitted 6 May, 2016; v1 submitted 7 January, 2016;
originally announced January 2016.
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Screening nuclear field fluctuations in quantum dots for indistinguishable photon generation
Authors:
R. N. E. Malein,
T. S. Santana,
J. M. Zajac,
A. C. Dada,
E. M. Gauger,
P. M. Petroff,
J. Y. Lim,
J. D. Song,
B. D. Gerardot
Abstract:
A semiconductor quantum dot can generate highly coherent and indistinguishable single photons. However, intrinsic semiconductor dephasing mechanisms can reduce the visibility of two-photon interference. For an electron in a quantum dot, a fundamental dephasing process is the hyperfine interaction with the nuclear spin bath. Here we directly probe the consequence of the fluctuating nuclear spins on…
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A semiconductor quantum dot can generate highly coherent and indistinguishable single photons. However, intrinsic semiconductor dephasing mechanisms can reduce the visibility of two-photon interference. For an electron in a quantum dot, a fundamental dephasing process is the hyperfine interaction with the nuclear spin bath. Here we directly probe the consequence of the fluctuating nuclear spins on the elastic and inelastic scattered photon spectra from a resident electron in a single dot. We find the nuclear spin fluctuations lead to detuned Raman scattered photons which are distinguishable from both the elastic and incoherent components of the resonance fluorescence. This significantly reduces two-photon interference visibility. However, we demonstrate successful screening of the nuclear spin noise which enables the generation of coherent single photons that exhibit high visibility two-photon interference.
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Submitted 8 January, 2016; v1 submitted 3 September, 2015;
originally announced September 2015.
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Polariton condensation in a planar microcavity with InGaAs quantum wells
Authors:
Pasquale Cilibrizzi,
Alexis Askitopoulos,
Matteo Silva,
Edmund Clarke,
Joanna M. Zajac,
Wolfgang Langbein,
Pavlos G. Lagoudakis
Abstract:
Polariton lattice condensates provide a platform for on chip quantum emulations. Interactions in extended polariton lattices are currently limited by the intrinsic photonic disorder of microcavities. Here, we fabricate a strain compensated planar GaAs/AlAs microcavity with embedded InGaAs quantum wells and report on polariton condensation under non-resonant optical excitation. Evidence of polarito…
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Polariton lattice condensates provide a platform for on chip quantum emulations. Interactions in extended polariton lattices are currently limited by the intrinsic photonic disorder of microcavities. Here, we fabricate a strain compensated planar GaAs/AlAs microcavity with embedded InGaAs quantum wells and report on polariton condensation under non-resonant optical excitation. Evidence of polariton condensation is supported spectroscopically both in reflection and transmission geometry, whilst the observation of a second threshold to photon lasing allows us to conclusively distinguish between the strong- and weak-coupling non-linear regimes.
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Submitted 24 July, 2014;
originally announced July 2014.
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Parametric scattering of microcavity polaritons into ghost branches
Authors:
Joanna M Zajac,
Wolfgang Langbein
Abstract:
Polaritons of defined momentum and energy are excited resonantly on the lower polariton branch of a planar semiconductor microcavity in the strong coupling regime, and the spectrally and momentum resolved emission is analyzed. We observe ghost branches from scattering within the lower polariton branch, as well as from scattering to the middle polariton branch, showing the non-linear mixing between…
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Polaritons of defined momentum and energy are excited resonantly on the lower polariton branch of a planar semiconductor microcavity in the strong coupling regime, and the spectrally and momentum resolved emission is analyzed. We observe ghost branches from scattering within the lower polariton branch, as well as from scattering to the middle polariton branch, showing the non-linear mixing between different branches. Extending the theoretical treatment of spontaneous parametric luminescence developed in Ciuti et al., Phys. Rev. B 63, 041303 (2001), the eigenmodes of the driven polariton system and its photoluminescence are modeled.
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Submitted 4 October, 2012;
originally announced October 2012.
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Structure and zero-dimensional polariton spectrum of natural defects in GaAs/AlAs microcavities
Authors:
Joanna M Zajac,
Wolfgang Langbein
Abstract:
We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al., Phys. Rev. B 85, 165309 (2012). The three-dimensional spatial structure of the defects was studied using combined focussed ion beam (FIB) and scanning electron micr…
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We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al., Phys. Rev. B 85, 165309 (2012). The three-dimensional spatial structure of the defects was studied using combined focussed ion beam (FIB) and scanning electron microscopy (SEM). We find that the defects originate from a local increase of a GaAs layer thickness. Modulation heights of up to 140nm for oval defects and 90nm for round defects are found, while the lateral extension is about 2um for oval and 4um for round defects. The GaAs thickness increase is attributed to Ga droplets deposited during growth due to Ga cell spitting. Following the droplet deposition, the thickness modulation expands laterally while reducing its height, yielding oval to round mounds of the interfaces and the surface. With increasing growth temperature, the ellipticity of the mounds is decreasing and their size is increasing. This suggests that the expansion is related to the surface mobility of Ga, which with increasing temperature is increasing and reducing its anisotropy between the [110] and [1-10] crystallographic directions. Comprehensive data consisting of surface profiles of defects measured using differential interference contrast (DIC) microscopy, volume information obtained using FIB/SEM, and characterization of the resulting confined polariton spectrum are presented.
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Submitted 1 August, 2012;
originally announced August 2012.
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Polariton states bound to defects in GaAs/AlAs planar microcavities
Authors:
Joanna M Zajac,
Wolfgang Langbein,
Maxime Hugues,
Mark Hopkinson
Abstract:
We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these structures are cross-hatch misfit dislocations, and point-like defects extended over several micrometers. We attribute the latter defects to Ga droplets emitted occasionally by the Ga cell during the growth. These de…
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We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these structures are cross-hatch misfit dislocations, and point-like defects extended over several micrometers. We attribute the latter defects to Ga droplets emitted occasionally by the Ga cell during the growth. These defects, also known as oval defects, result in a dome-like local modulation of surface, which is translated into the cavity structure and leads to a lateral modulation of the cavity polariton energy of up to 15\,meV. The resulting spatially localized potential landscape for the in-plane polariton motion creates a series of bound states. These states were characterized by spectrally resolved transmission imaging in real and reciprocal space, and reveal the spatial potential created by the defects. Interestingly, the defect states exhibit long lifetimes in the 10ps range, which we attribute to a spatially smooth confinement potential.
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Submitted 25 November, 2011;
originally announced November 2011.
