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Surface enhanced covalency and Madelung potentials in Nb doped SrTiO$_3$ (100), (110) and (111) single crystals
Authors:
G. M. Vanacore,
L. F. Zagonel,
N. Barrett
Abstract:
The influence of surface enhanced covalency on the Madelung potential is experimentally investigated using angle-resolved photoemission for (100), (110) and (111) SrTiO$_3$ surfaces after annealing in UHV at 630 °C. Deconvolution of the core level spectra (O 1s, Sr 3d and Ti 2p) distinguishes bulk and surface components, which are interpreted in terms of surface enhanced covalency (SEC). By compar…
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The influence of surface enhanced covalency on the Madelung potential is experimentally investigated using angle-resolved photoemission for (100), (110) and (111) SrTiO$_3$ surfaces after annealing in UHV at 630 °C. Deconvolution of the core level spectra (O 1s, Sr 3d and Ti 2p) distinguishes bulk and surface components, which are interpreted in terms of surface enhanced covalency (SEC). By comparing the experimentally measured binding energies with theoretical calculations developed in the framework of the Localized-Hole Point-Ion Model, we quantitatively determine the effective electron occupancy at bulk and surface Sr and Ti sites. Our results confirm the essentially ionic character of Sr$-$O bond and the partially covalent character of Ti$-$O bond in bulk STO. The cation Ti and Sr electron occupation is greater for all the three surfaces than in the bulk. Surface covalency shifts the Madelung potential at the surface by ΔEM. ΔEM is a minimum for the (111) surface, and increases through (100), attaining a maximum for (110). The angle-resolved valence band spectra and the work function values also confirm this trend. The results are consistent with d$-$d charge fluctuations dominating at the surface, whereas metal-ligand charge transfers are more energetically favourable in the bulk.
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Submitted 7 April, 2023;
originally announced April 2023.
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Impacts of dielectric screening on the luminescence of monolayer WSe$_2$
Authors:
Fabio J. R. Costa,
Thiago G-L. Brito,
Ingrid D. Barcelos,
Luiz Fernando Zagonel
Abstract:
Single layers of transition metal dichalcogenides, such as WSe$_2$ have gathered increasing attention due to their intense electron-hole interactions, being considered promising candidates for develo** novel optical applications. Within the few-layer regime, these systems become highly sensitive to the surrounding environment, enabling the possibility of using a proper substrate to tune desired…
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Single layers of transition metal dichalcogenides, such as WSe$_2$ have gathered increasing attention due to their intense electron-hole interactions, being considered promising candidates for develo** novel optical applications. Within the few-layer regime, these systems become highly sensitive to the surrounding environment, enabling the possibility of using a proper substrate to tune desired aspects of these atomically-thin semiconductors. In this scenario, the dielectric environment provided by the substrates exerts significant influence on electronic and optical properties of these layered materials, affecting the electronic band-gap and the exciton binding energy. However, the corresponding effect on the luminescence of transition metal dichalcogenides is still under discussion. To elucidate these impacts, we used a broad set of materials as substrates for single-layers of WSe$_2$, enabling the observation of these effects over a wide range of electrical permittivities. Our results demonstrate that an increasing permittivity induces a systematic red-shift of the optical band-gap of WSe$_2$, intrinsically related to a considerable reduction of the luminescence intensity. Moreover, we annealed the samples to ensure a tight coupling between WSe$_2$and its substrates, reducing the effect of undesired adsorbates trapped in the interface. Ultimately, our findings reveal how critical the annealing temperature can be, indicating that above a certain threshold, the heating treatment can induce adverse impacts on the luminescence. Furthermore, our conclusions highlight the influence the dielectric properties of the substrate have on the luminescence of WSe$_2$, showing that a low electrical permittivity favours preserving the native properties of the adjacent monolayer
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Submitted 15 March, 2023;
originally announced March 2023.
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$μ$eV electron spectromicroscopy using free-space light
Authors:
Yves Auad,
Eduardo J. C. Dias,
Marcel Tencé,
Jean-Denis Blazit,
Xiaoyan Li,
Luiz Fernando Zagonel,
Odile Stéphan,
Luiz H. G. Tizei,
F. Javier García de Abajo,
Mathieu Kociak
Abstract:
The synergy between free electrons and light has recently been leveraged to reach an impressive degree of simultaneous spatial and spectral resolution, enabling applications in microscopy and quantum optics. However, the required combination of electron optics and light injection into the spectrally narrow modes of arbitrary specimens remains a challenge. Here, we demonstrate microelectronvolt spe…
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The synergy between free electrons and light has recently been leveraged to reach an impressive degree of simultaneous spatial and spectral resolution, enabling applications in microscopy and quantum optics. However, the required combination of electron optics and light injection into the spectrally narrow modes of arbitrary specimens remains a challenge. Here, we demonstrate microelectronvolt spectral resolution in the nanoscale map** of photonic modes with quality factors as high as 10$^4$. We rely on mode-matching of a tightly focused laser beam to whispering gallery modes to achieve a 10$^8$-fold increase in light-electron coupling efficiency. By adapting the shape and size of free-space optical beams to address specific physical questions, our approach allows us to interrogate any type of photonic structure with unprecedented spectral and spatial detail
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Submitted 23 December, 2022;
originally announced December 2022.
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Design and implementation of a device based on an off-axis parabolic mirror to perform luminescence experiments in a scanning tunneling microscope
Authors:
Ricardo Javier Peña Román,
Yves Auad,
Lucas Grasso,
Lazaro A Padilha,
Fernando Alvarez,
Ingrid David Barcelos,
Mathieu Kociak,
Luiz Fernando Zagonel
Abstract:
We present the design, implementation, and illustrative results of a light collection/injection strategy based on an off-axis parabolic mirror collector for a low-temperature Scanning Tunneling Microscope (STM). This device allows us to perform STM induced Light Emission (STM-LE) and Cathodoluminescence (STM-CL) experiments and in situ Photoluminescence (PL) and Raman spectroscopy as complementary…
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We present the design, implementation, and illustrative results of a light collection/injection strategy based on an off-axis parabolic mirror collector for a low-temperature Scanning Tunneling Microscope (STM). This device allows us to perform STM induced Light Emission (STM-LE) and Cathodoluminescence (STM-CL) experiments and in situ Photoluminescence (PL) and Raman spectroscopy as complementary techniques. Considering the Étendue conservation and using an off-axis parabolic mirror, it is possible to design a light collection and injection system that displays 72% of collection efficiency (considering the hemisphere above the sample surface) while maintaining high spectral resolution and minimizing signal loss. The performance of the STM is tested by atomically resolved images and scanning tunneling spectroscopy results on standard sample surfaces. The capabilities of our system are demonstrated by performing STM-LE on metallic surfaces and two-dimensional semiconducting samples, observing both plasmonic and excitonic emissions. In addition, we carried out in situ PL measurements on semiconducting monolayers and quantum dots and in situ Raman on graphite and hexagonal boron nitride (h-BN) samples. Additionally, STM-CL and PL were obtained on monolayer h-BN gathering luminescence spectra that are typically associated with intragap states related to carbon defects. The results show that the flexible and efficient light injection and collection device based on an off-axis parabolic mirror is a powerful tool to study several types of nanostructures with multiple spectroscopic techniques in correlation with their morphology at the atomic scale and electronic structure.
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Submitted 10 October, 2022;
originally announced October 2022.
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Tunneling-current-induced local excitonic luminescence in p-doped WSe$_2$ monolayers
Authors:
Ricardo Javier Peña Román,
Yves Auad,
Lucas Grasso,
Fernando Alvarez,
Ingrid David Barcelos,
Luiz Fernando Zagonel
Abstract:
We have studied the excitonic properties of exfoliated tungsten diselenide (WSe$_2$) monolayers transferred to gold substrates using the tunneling current in a Scanning Tunneling Microscope (STM) operated in air to excite the light emission locally. In obtained spectra, emission energies are independent of the applied bias voltage and resemble photoluminescence (PL) results, indicating that, in bo…
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We have studied the excitonic properties of exfoliated tungsten diselenide (WSe$_2$) monolayers transferred to gold substrates using the tunneling current in a Scanning Tunneling Microscope (STM) operated in air to excite the light emission locally. In obtained spectra, emission energies are independent of the applied bias voltage and resemble photoluminescence (PL) results, indicating that, in both cases, the light emission is due to neutral and charged exciton recombination. Interestingly, the electron injection rate, that is, the tunneling current, can be used to control the ratio of charged to neutral exciton emission. The obtained quantum yield in the transition metal dichalcogenide (TMD) is $~5x10^{-7}$ photons per electron. The proposed excitation mechanism is the direct injection of carriers into the conduction band. The monolayer WSe$_2$ presents bright and dark defects spotted by STM images performed under UHV. STS confirms the sample as p-doped, possibly as a net result of the observed defects. The presence of an interfacial water layer decouples the monolayer from the gold support and allows excitonic emission from the WSe$_2$ monolayer. The creation of a water layer is an inherent feature of the sample transferring process due to the ubiquitous air moisture. Consequently, vacuum thermal annealing, which removes the water layer, quenches excitonic luminescence from the TMD. The tunneling current can locally displace water molecules leading to excitonic emission quenching and to plasmonic emission due to the gold substrate. The present findings extend the use and the understanding of STM induced light emission (STM-LE) on semiconducting TMDs to probe exciton emission and dynamics with high spatial resolution.
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Submitted 4 October, 2022;
originally announced October 2022.
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Electroluminescence of monolayer WS$_2$ in a scanning tunneling microscope: the effect of bias polarity on the spectral and angular distribution of the emitted light
Authors:
Ricardo Javier Peña Román},
Delphine Pommier,
Rémi Bretel,
Luis E. Parra López,
Etienne Lorchat,
Julien Chaste,
Abdelkarim Ouerghi,
Séverine Le Moal,
Elizabeth Boer-Duchemin,
Gérald Dujardin,
Andrey G. Borisov,
Luiz F. Zagonel,
Guillaume Schull,
Stéphane Berciaud,
Eric Le Moal
Abstract:
Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectroscopy and Fourier-space optical microscopy, we show that the bias polarity of the tunnel junction determines the spectral and angular distribution of the…
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Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectroscopy and Fourier-space optical microscopy, we show that the bias polarity of the tunnel junction determines the spectral and angular distribution of the emitted light. At positive sample bias, only emission from excitonic species featuring an in-plane transition dipole moment is detected. Based on the spectral distribution of the emitted light, we infer that the dominant contribution is from charged excitons, i.e., trions. At negative sample bias, additional contributions from lower-energy excitonic species are evidenced in the emission spectra and the angular distribution of the emitted light reveals a mixed character of in-plane and out-of-plane transition dipole moments.
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Submitted 25 May, 2022;
originally announced May 2022.
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Band gap measurements of monolayer h-BN and insights into carbon-related point defects
Authors:
Ricardo Javier Peña Román,
Fábio J R Costa Costa,
Alberto Zobelli,
Christine Elias,
Pierre Valvin,
Guillaume Cassabois,
Bernard Gil,
Alex Summerfield,
Tin S Cheng,
Christopher J Mellor,
Peter H Beton,
Sergei V Novikov,
Luiz F Zagonel
Abstract:
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of th…
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Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is $(6.8\pm0.2)$ eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of $(0.7\pm0.2)$ eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level.
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Submitted 16 July, 2021;
originally announced July 2021.
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Towards Engineering Intrinsic Linewidths and Line-Broadening in Perovskite Nanoplatelets
Authors:
Albert Liu,
Gabriel Nagamine,
Luiz G. Bonato,
Diogo B. Almeida,
Luiz F. Zagonel,
Ana F. Nogueira,
Lazaro A. Padilha,
Steven T. Cundiff
Abstract:
Perovskite nanoplatelets possess extremely narrow absorption and emission linewidths, which are crucial characteristics for many optical applications. However, their underlying intrinsic and extrinsic line-broadening mechanisms are poorly understood. Here, we apply multi-dimensional coherent spectroscopy to determine the homogeneous line-broadening of colloidal perovskite nanoplatelet ensembles. W…
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Perovskite nanoplatelets possess extremely narrow absorption and emission linewidths, which are crucial characteristics for many optical applications. However, their underlying intrinsic and extrinsic line-broadening mechanisms are poorly understood. Here, we apply multi-dimensional coherent spectroscopy to determine the homogeneous line-broadening of colloidal perovskite nanoplatelet ensembles. We demonstrate control of not only their intrinsic linewidths, but also control of various broadening mechanisms by tuning the platelet geometry. Remarkably, we find that decreasing nanoplatelet thickness by a single polyhedral layer results in a 2-fold reduction of the inhomogeneous linewidth and a 3-fold reduction of the intrinsic homogeneous linewidth to the sub-meV regime. In addition, our measurements suggest homogeneously broadened exciton resonances in 3-layer (but not necessarily 4-layer) nanoplatelets at room-temperature.
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Submitted 5 November, 2020;
originally announced November 2020.
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Partially-Bright Triplet Excitons in Perovskite Nanocrystals
Authors:
Albert Liu,
Diogo B. Almeida,
Luiz G. Bonato,
Gabriel Nagamine,
Luiz F. Zagonel,
Ana F. Nogueira,
Lazaro A. Padilha,
Steven T. Cundiff
Abstract:
Advances in opto-electronics require the development of materials with novel and engineered characteristics. A class of materials that has garnered tremendous interest is metal-halide perovskites, stimulated by meteoric increases in photovoltaic efficiencies of perovskite solar cells. In addition, recent advances have applied perovskite nanocrystals (NCs) in light-emitting devices. It was discover…
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Advances in opto-electronics require the development of materials with novel and engineered characteristics. A class of materials that has garnered tremendous interest is metal-halide perovskites, stimulated by meteoric increases in photovoltaic efficiencies of perovskite solar cells. In addition, recent advances have applied perovskite nanocrystals (NCs) in light-emitting devices. It was discovered recently that, for cesium lead-halide perovskite NCs, their unusually efficient light-emission may be due to a unique excitonic fine-structure composed of three bright triplet states that minimally interact with a proximal dark singlet state. To study this fine-structure without isolating single NCs, we use multi-dimensional coherent spectroscopy at cryogenic temperatures to reveal coherences involving triplet states of a CsPbI$_3$ NC ensemble. Picosecond timescale dephasing times are measured for both triplet and inter-triplet coherences, from which we infer a unique exciton fine-structure level-ordering comprised of a dark state energetically positioned within the bright triplet manifold.
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Submitted 26 February, 2020; v1 submitted 19 February, 2020;
originally announced February 2020.
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Effect of Carbon on the Compound Layer Properties of AISI H13 Tool Steel in Pulsed Plasma Nitrocarburizing
Authors:
Rodrigo L. O. Basso,
Carlos A. Figueroa,
Luiz F. Zagonel,
Heloise O. Pastore,
Daniel Wisnivesky,
Fernando Alvarez
Abstract:
Due to the mechanical and inertness properties of the Epsilon phase, its formation as a compact monolayer is most wanted in plasma surface treatments of steels. This phase can be obtained by the inclusion of carbon species in the plasma. In this work, we present a systematic study of the carbon influence on the compound layer in an AISI H13 tool steel by pulsed plasma nitrocarburizing process with…
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Due to the mechanical and inertness properties of the Epsilon phase, its formation as a compact monolayer is most wanted in plasma surface treatments of steels. This phase can be obtained by the inclusion of carbon species in the plasma. In this work, we present a systematic study of the carbon influence on the compound layer in an AISI H13 tool steel by pulsed plasma nitrocarburizing process with different gaseous ratios.
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Submitted 16 February, 2020;
originally announced February 2020.
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Effect of Dimensionality on the Optical Absorption Properties of CsPbI$_3$ Perovskite Nanocrystals
Authors:
Albert Liu,
Luiz G. Bonato,
Francesco Sessa,
Diogo B. Almeida,
Erik Isele,
Gabriel Nagamine,
Luiz F. Zagonel,
Ana F. Nogueira,
Lazaro A. Padilha,
Steven T. Cundiff
Abstract:
The band-gaps of CsPbI$_3$ perovskite nanocrystals are measured by absorption spectroscopy at cryogenic temperatures. Anomalous band-gap shifts are observed in CsPbI$_3$ nanocubes and nanoplatelets, which are modeled accurately by band-gap renormalization due to lattice vibrational modes. We find that decreasing dimensionality of the CsPbI$_3$ lattice in nanoplatelets greatly reduces electron-phon…
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The band-gaps of CsPbI$_3$ perovskite nanocrystals are measured by absorption spectroscopy at cryogenic temperatures. Anomalous band-gap shifts are observed in CsPbI$_3$ nanocubes and nanoplatelets, which are modeled accurately by band-gap renormalization due to lattice vibrational modes. We find that decreasing dimensionality of the CsPbI$_3$ lattice in nanoplatelets greatly reduces electron-phonon coupling, and dominant out-of-plane quantum confinement results in a homogeneously broadened absorption lineshape down to cryogenic temperatures. An absorption tail forms at low-temperatures in CsPbI$_3$ nanocubes, which we attribute to shallow defect states positioned near the valence band-edge.
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Submitted 11 October, 2019; v1 submitted 13 August, 2019;
originally announced August 2019.
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Study of nitrogen ion do** of titanium dioxide films
Authors:
Raul Ramos,
Diego Scoca,
Rafael Borges Merlo,
Francisco Chagas Marques,
Fernando Alvarez,
Luiz Fernando Zagonel
Abstract:
This study reports on the properties of nitrogen doped titanium dioxide $TiO_2$ thin films considering the application as transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen atmosphere on a quartz substrate at 400 or 500°C. Films were then doped at the same temperature by 150 eV nitrogen ions. The films were prepared in Anatase phase wh…
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This study reports on the properties of nitrogen doped titanium dioxide $TiO_2$ thin films considering the application as transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen atmosphere on a quartz substrate at 400 or 500°C. Films were then doped at the same temperature by 150 eV nitrogen ions. The films were prepared in Anatase phase which was maintained after do**. Up to 30at% nitrogen concentration was obtained at the surface, as determined by in situ x-ray photoelectron spectroscopy (XPS). Such high nitrogen concentration at the surface lead to nitrogen diffusion into the bulk which reached about 25 nm. Hall measurements indicate that average carrier density reached over $10^{19} cm^{-3}$ with mobility in the range of $0.1$ to $1 cm^2V^{-1}s^{-1}$. Resistivity about $3.10^{-1} Ωcm$ could be obtained with 85% light transmission at 550 nm. These results indicate that low energy implantation is an effective technique for $TiO_2$ do** that allows an accurate control of the do** process independently from the TiO2 preparation. Moreover, this do** route seems promising to attain high do** levels without significantly affecting the film structure. Such approach could be relevant for preparation of $N:TiO_2$ transparent conduction electrodes (TCE).
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Submitted 28 March, 2018;
originally announced March 2018.
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In situ photoemission electron spectroscopy study of nitrogen ion implanted AISI-H13 steel
Authors:
L. F. Zagonel,
C. A. Figueroa,
F. Alvarez
Abstract:
In this paper we report the effect of hydrogen on the structural properties of AISI-H13 steel nitrogen-implanted samples in low oxygen partial pressure atmosphere. The samples were implanted in a high vacuum chamber by using a broad ion beam source. The H2+/N2+ ion composition of the beam was varied and the surface composition studied in situ by photoemission electron spectroscopy (XPS). The sampl…
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In this paper we report the effect of hydrogen on the structural properties of AISI-H13 steel nitrogen-implanted samples in low oxygen partial pressure atmosphere. The samples were implanted in a high vacuum chamber by using a broad ion beam source. The H2+/N2+ ion composition of the beam was varied and the surface composition studied in situ by photoemission electron spectroscopy (XPS). The samples were also ex situ analyzed by X-ray diffraction and scanning electron microscopy (SEM), including energy-dispersive spectroscopy measurements. It was found that hydrogen has the effect of modifying the amount of retained nitrogen at the surfaces. This result shows that hydrogen plays a role beyond the well-established effect of oxygen etching in industrial machines where vacuum is relatively less well controlled. Finally, an optimum concentration of 20 to 40% [H2]/[H2+N2] ion beam composition was determined to obtain maximum nitrogen incorporation on the metal surface.
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Submitted 5 December, 2017;
originally announced December 2017.
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Tool steel ion beam assisted nitrocarburization
Authors:
L. F. Zagonel,
F. Alvarez
Abstract:
The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and micro…
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The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth.
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Submitted 1 December, 2017;
originally announced December 2017.
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Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns
Authors:
N Barrett,
L F Zagonel,
O Renault,
A Bailly
Abstract:
An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local do** is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, qua…
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An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local do** is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for do**, band bending and surface photovoltage.
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Submitted 29 March, 2017;
originally announced March 2017.
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Nanometre scale monitoring of the quantum confined stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires
Authors:
L. F. Zagonel,
L. H. G. Tizei,
G. Z. Vitiello,
G. Jacopin,
L. Rigutti,
M. Tchernycheva,
F. H. Julien,
R. Songmuang,
T. Ostasevicius,
F. de la Peña,
C. Ducati,
P. A Midgley,
M. Kociak
Abstract:
We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spannin…
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We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over 3 orders of magnitude, strong non-linearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4nm), the QDisk emission energy is observed to blue-shift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm), the blue-shift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 pA to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the efficiency droop as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.
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Submitted 24 May, 2016;
originally announced May 2016.
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Photocatalytic hydrogen production of Co(OH)2 nanoparticle-coated α-Fe2O3 nanorings
Authors:
Heberton Wender,
Renato V. Gonçalves,
Carlos Sato B. Dias,
Maximiliano J. M. Zapata,
Luiz F. Zagonel,
Edielma C. Mendonça,
Sérgio R. Teixeira,
Flávio Garcia
Abstract:
The production of hydrogen from water using only a catalyst and solar energy is one of the most challenging and promising outlets for the generation of clean and renewable energy. Semiconductor photocatalysts for solar hydrogen production by water photolysis must employ stable, non-toxic, abundant and inexpensive visible-light absorbers capable of harvesting light photons with adequate potential t…
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The production of hydrogen from water using only a catalyst and solar energy is one of the most challenging and promising outlets for the generation of clean and renewable energy. Semiconductor photocatalysts for solar hydrogen production by water photolysis must employ stable, non-toxic, abundant and inexpensive visible-light absorbers capable of harvesting light photons with adequate potential to reduce water. Here, we show that a-Fe2O3 can meet these requirements by means of using hydrothermally prepared nanorings. These iron oxide nanoring photocatalysts proved capable of producing hydrogen efficiently without application of an external bias. In addition, Co(OH)2 nanoparticles were shown to be efficient co-catalysts on the nanoring surface by improving the efficiency of hydrogen generation. Both nanoparticle-coated and uncoated nanorings displayed superior photocatalytic activity for hydrogen evolution when compared with TiO2 nanoparticles, showing themselves to be promising materials for water-splitting using only solar light.
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Submitted 30 January, 2016;
originally announced February 2016.
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Effect of bombarding steel with Xe$^+$ ions on the surface nanostructure and on pulsed plasma nitriding process
Authors:
S. Cucatti,
E. A. Ochoa,
M. Morales,
R. Droppa Jr,
J. Garcia,
H. C. Pinto,
L. F. Zagonel,
D. Wisnivesky,
C. A Figueroa,
F. Alvarez
Abstract:
The modification of steel (AISI 316L and AISI 4140) surface morphology and underlying inter-crystalline grains strain due to Xe$^+$ ion bombardment are reported to affect nitrogen diffusion after a pulsed plasma nitriding process. The ion bombardment induces regular nanometric patterns and increases the roughness of the material surface. The strain induced by the noble gas bombardment is observed…
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The modification of steel (AISI 316L and AISI 4140) surface morphology and underlying inter-crystalline grains strain due to Xe$^+$ ion bombardment are reported to affect nitrogen diffusion after a pulsed plasma nitriding process. The ion bombardment induces regular nanometric patterns and increases the roughness of the material surface. The strain induced by the noble gas bombardment is observed in depths which are orders of magnitude larger than the projectiles' stop** distance. The pre-bombarded samples show peculiar microstructures formed in the nitrided layers, modifying the in-depth hardness profile. Unlike the double nitrided layer normally obtained in austenitic stainless steel by pulsed plasma nitriding process, the Xe$^+$ pre-bombardment treatment leads to a single thick compact layer. In nitrided pre-bombarded AISI 4140 steel, the diffusion zone shows long iron nitride needle-shaped precipitates, while in non-pre-bombarded samples finer precipitates are distributed in the material.
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Submitted 26 November, 2014;
originally announced November 2014.
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Enhanced Eshelby Twist on Thin Wurtzite InP Nanowires and Measurement of Local Crystal Rotation
Authors:
L. H. G. Tizei,
A. J. Craven,
L. F. Zagonel,
M. Tencé,
O. Stéphan,
T. Chiaramonte,
M. A. Cotta,
D. Ugarte
Abstract:
We have performed a detailed study of the lattice distortions of InP wurtzite nanowires containing an axial screw dislocation. Eshelby predicted that this kind of system should show a crystal rotation due to the dislocation induced torque. We have measured the twisting rate and the dislocation Burgers vector on individual wires, revealing that nanowires with a 10-nm radius have a twist up to 100%…
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We have performed a detailed study of the lattice distortions of InP wurtzite nanowires containing an axial screw dislocation. Eshelby predicted that this kind of system should show a crystal rotation due to the dislocation induced torque. We have measured the twisting rate and the dislocation Burgers vector on individual wires, revealing that nanowires with a 10-nm radius have a twist up to 100% larger than estimated from elasticity theory. The strain induced by the deformation has a Mexican-hat-like geometry, which may create a tube-like potential well for carriers.
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Submitted 11 September, 2014;
originally announced September 2014.
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The Microstructure of Tool Steel after Low Temperature Ion Nitriding
Authors:
L. F. Zagonel,
E. J. Mittemeijer,
F. Alvarez
Abstract:
The microstructural development in H13 tool steel upon nitriding by an ion beam process was investigated. The nitriding experiments were performed at a relatively low temperature of about 400°C and at constant ion beam energy (400 eV) of different doses in a high-vacuum preparation chamber; the ion source was fed with high purity nitrogen gas. The specimens were characterized by X-ray photoelectro…
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The microstructural development in H13 tool steel upon nitriding by an ion beam process was investigated. The nitriding experiments were performed at a relatively low temperature of about 400°C and at constant ion beam energy (400 eV) of different doses in a high-vacuum preparation chamber; the ion source was fed with high purity nitrogen gas. The specimens were characterized by X-ray photoelectron spectroscopy (XPS), electron probe microanalysis (EPMA), scanning and transmission electron microscopy (SEM and TEM), and grazing incidence and Bragg-Brentano X-ray diffractometry. In particular, the influence of the nitrogen surface concentration on the development of the nitrogen concentration-depth profile and the possible precipitation of alloying element nitrides are discussed.
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Submitted 12 December, 2012;
originally announced December 2012.
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Full field chemical imaging of buried native sub-oxide layers on doped silicon patterns
Authors:
F. de la Peña,
N. Barrett,
L. F. Zagonel,
M. Walls,
O. Renault
Abstract:
Fully energy-filtered X-ray photoelectron emission microscopy is used to analyze the spatial distribution of the silicon sub-oxide structure at the SiO2/Si interface as a function of underlying do** pattern. Using a spectroscopic pixel-by-pixel curve fitting analysis, we obtain the sub-oxide binding energy and intensity distributions over the full field of view. Binding energy maps for each oxid…
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Fully energy-filtered X-ray photoelectron emission microscopy is used to analyze the spatial distribution of the silicon sub-oxide structure at the SiO2/Si interface as a function of underlying do** pattern. Using a spectroscopic pixel-by-pixel curve fitting analysis, we obtain the sub-oxide binding energy and intensity distributions over the full field of view. Binding energy maps for each oxidation state are obtained with a spatial resolution of 120 nm. Within the framework of a five-layer model, the experimental data are used to obtain quantitative maps of the sub-oxide layer thickness and also their spatial distribution over the p-n junctions. Variations in the sub-oxide thicknesses are found to be linked to the level and type of do**. The procedure, which takes into account instrumental artefacts, enables the quantitative analysis of the full 3D dataset.
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Submitted 20 November, 2012;
originally announced November 2012.
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Orientation-dependent surface composition of in situ annealed strontium titanate
Authors:
Luiz F. Zagonel,
Nicholas Barrett,
Olivier Renault,
Aude Bailly,
Michael Bäurer,
Michael Hoffmann,
Shao-Ju Shih,
David Cockayne
Abstract:
The surface composition of polycrystalline niobium-doped strontium titanate (SrTiO3 : Nb) is studied using X-ray photoelectron emission microscopy (XPEEM) for many grain orientations in order to characterise the surface chemistry with high spatial resolution. The surface sensitivity is maximised by the use of soft X-ray synchrotron radiation (SR). The grain orientation is determined by electron ba…
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The surface composition of polycrystalline niobium-doped strontium titanate (SrTiO3 : Nb) is studied using X-ray photoelectron emission microscopy (XPEEM) for many grain orientations in order to characterise the surface chemistry with high spatial resolution. The surface sensitivity is maximised by the use of soft X-ray synchrotron radiation (SR). The grain orientation is determined by electron backscattering diffraction (EBSD). Stereographic plots are used to show the correlation between surface composition and orientation for several grains. Predominant surface terminations are assigned to major orientations.
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Submitted 20 October, 2012;
originally announced October 2012.
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Orientation dependent work function of in situ annealed strontium titanate
Authors:
L F Zagonel,
M Bäurer,
A Bailly,
O Renault,
M Hoffmann,
S-J Shih,
D Cockayne,
N Barrett
Abstract:
We have used energy filtered x-ray photoelectron emission microscopy (XPEEM) and synchrotron radiation to measure the grain orientation dependence of the work function of a sintered niobium doped strontium titanate ceramic. A significant spread in work function values is found. Grain orientation and surface reducing/oxidizing conditions are the main factors in determining the work function. Energy…
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We have used energy filtered x-ray photoelectron emission microscopy (XPEEM) and synchrotron radiation to measure the grain orientation dependence of the work function of a sintered niobium doped strontium titanate ceramic. A significant spread in work function values is found. Grain orientation and surface reducing/oxidizing conditions are the main factors in determining the work function. Energy filtered XPEEM looks ideally suited for analysis of other technologically interesting polycrystalline samples.
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Submitted 10 October, 2012;
originally announced October 2012.
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Visualising highly localised luminescence in GaN/AlN heterostructures in nanowires
Authors:
L. F. Zagonel,
L. Rigutti,
M. Tchernycheva,
G. Jacopin,
R. Songmuang,
M. Kociak
Abstract:
The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM) operating in spectrum imaging mode. For the electron beam excitation in the QDisc region, the luminescence signal is highly localized with spatial extension as low as…
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The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM) operating in spectrum imaging mode. For the electron beam excitation in the QDisc region, the luminescence signal is highly localized with spatial extension as low as 5 nm due to the high band gap difference between GaN and AlN. This allows for the discrimination between the emission of neighbouring QDiscs and for evidencing the presence of lateral inclusions, about 3 nm thick and 20 nm long rods (quantum rods, QRods), grown unintentionally on the nanowire sidewalls. These structures, also observed by STEM dark-field imaging, are proven to be optically active in nanoCL, emitting at similar, but usually shorter, wavelengths with respect to most QDiscs.
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Submitted 7 February, 2015; v1 submitted 12 September, 2012;
originally announced September 2012.
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Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
Authors:
Luiz Fernando Zagonel,
Stefano Mazzucco,
Marcel Tencé,
Katia March,
Romain Bernard,
Benoît Laslier,
Gwénolé Jacopin,
Maria Tchernycheva,
Lorenzo Rigutti,
Francois H. Julien,
Rudeesun Songmuang,
Mathieu Kociak
Abstract:
We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to c…
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We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to correlate their optical properties to their size, measured with atomic resolution. The direct correlation between the quantum disk size and emission wavelength provides evidence of the quantum confined Stark effect leading to an emission below the bulk GaN band gap for disks thicker than 2.6 nm. With the help of simulations, we show that the internal electric field in the studied quantum disks is smaller than what is expected in the quantum well case. We show evidence of a clear dispersion of the emission wavelengths of different quantum disks of identical size but different positions along the wire. This dispersion is systematically correlated to a change of the diameter of the AlN shell coating the wire and is thus attributed to the related strain variations along the wire. The present work opens the way both to fundamental studies of quantum confinement in closely packed quantum emitters and to characterizations of optoelectronic devices presenting carrier localization on the nanometer scale.
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Submitted 5 September, 2012;
originally announced September 2012.
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Nanosized precipitates in H13 tool steel low temperature plasma nitriding
Authors:
L. F. Zagonel,
J. Bettini,
R. L. O. Basso,
P. Paredez,
H. Pinto,
C. M. Lepienski,
F. Alvarez
Abstract:
A comprehensive study of pulsed nitriding in AISI H13 tool steel at low temperature (400°C) is reported for several durations. X-ray diffraction results reveal that a nitrogen enriched compound (Epsilon-Fe2-3N, iron nitride) builds up on the surface within the first process hour despite the low process temperature. Beneath the surface, X-ray Wavelength Dispersive Spectroscopy (WDS) in a Scanning E…
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A comprehensive study of pulsed nitriding in AISI H13 tool steel at low temperature (400°C) is reported for several durations. X-ray diffraction results reveal that a nitrogen enriched compound (Epsilon-Fe2-3N, iron nitride) builds up on the surface within the first process hour despite the low process temperature. Beneath the surface, X-ray Wavelength Dispersive Spectroscopy (WDS) in a Scanning Electron Microscope (SEM) indicates relatively higher nitrogen concentrations (up to 12 at.%) within the diffusion layer while microscopic nitrides are not formed and existing carbides are not dissolved. Moreover, in the diffusion layer, nitrogen is found to be dispersed in the matrix and forming nanosized precipitates. The small coherent precipitates are observed by High-Resolution Transmission Electron Microscopy (HR-TEM) while the presence of nitrogen is confirmed by electron energy loss spectroscopy (EELS). Hardness tests show that the material hardness increases linearly with the nitrogen concentration, reaching up to 14.5 GPa in the surface while the Young Modulus remains essentially unaffected. Indeed, the original steel microstructure is well preserved even in the nitrogen diffusion layer. Nitrogen profiles show a case depth of about ~43 microns after nine hours of nitriding process. These results indicate that pulsed plasma nitriding is highly efficient even at such low temperatures and that at this process temperature it is possible to form thick and hard nitrided layers with satisfactory mechanical properties. This process can be particularly interesting to enhance the surface hardness of tool steels without exposing the workpiece to high temperatures and altering its bulk microstructure.
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Submitted 28 August, 2012;
originally announced August 2012.
