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Enhanced ultrafast relaxation rate in the Weyl semimetal phase of $\mathbf{MoTe_2}$ measured by time-and angle-resolved photoelectron spectroscopy
Authors:
A. Crepaldi,
G. Autès,
G. Gatti,
S. Roth,
A. Sterzi,
G. Manzoni,
M. Zacchigna,
C. Cacho,
R. T. Chapman,
E. Springate,
E. A. Seddon,
Ph. Bugnon,
A. Magrez,
H. Berger,
I. Vobornik,
M. Kalläne,
A. Quer,
K. Rossnagel,
F. Parmigiani,
O. V. Yazyev,
M. Grioni
Abstract:
$\mathrm{MoTe_2}$ has recently been shown to realize in its low-temperature phase the type-II Weyl semimetal (WSM). We investigated by time- and angle- resolved photoelectron spectroscopy (tr-ARPES) the possible influence of the Weyl points in the electron dynamics above the Fermi level $\mathrm{E_F}$, by comparing the ultrafast response of $\mathrm{MoTe_2}…
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$\mathrm{MoTe_2}$ has recently been shown to realize in its low-temperature phase the type-II Weyl semimetal (WSM). We investigated by time- and angle- resolved photoelectron spectroscopy (tr-ARPES) the possible influence of the Weyl points in the electron dynamics above the Fermi level $\mathrm{E_F}$, by comparing the ultrafast response of $\mathrm{MoTe_2}$ in the trivial and topological phases. In the low-temperature WSM phase, we report an enhanced relaxation rate of electrons optically excited to the conduction band, which we interpret as a fingerprint of the local gap closure when Weyl points form. By contrast, we find that the electron dynamics of the related compound $\mathrm{WTe_2}$ is slower and temperature-independent, consistent with a topologically trivial nature of this material. Our results shows that tr-ARPES is sensitive to the small modifications of the unoccupied band structure accompanying the structural and topological phase transition of $\mathrm{MoTe_2}$.
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Submitted 28 September, 2017;
originally announced September 2017.
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Evidence for a Strong Topological Insulator Phase in $\mathrm{ZrTe_5}$
Authors:
G. Manzoni,
L. Gragnaniello,
G. Autès,
T. Kuhn,
A. Sterzi,
F. Cilento,
M. Zacchigna,
V. Enenkel,
I. Vobornik,
L. Barba,
F. Bisti,
Ph. Bugnon,
A. Magrez,
V. N. Strocov,
H. Berger,
O. V. Yazyev,
M. Fonin,
F. Parmigiani,
A. Crepaldi
Abstract:
The complex electronic properties of $\mathrm{ZrTe_5}$ have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material is a strong topological insulator (ST…
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The complex electronic properties of $\mathrm{ZrTe_5}$ have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our x-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of $\mathrm{ZrTe_5}$.
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Submitted 11 August, 2016;
originally announced August 2016.
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Ultrafast Optical Control of the Electronic Properties of $ZrTe_5$
Authors:
G. Manzoni,
A. Sterzi,
A. Crepaldi,
M. Diego,
F. Cilento,
M. Zacchigna,
Ph. Bugnon,
H. Berger,
A. Magrez,
M. Grioni,
F. Parmigiani
Abstract:
We report on the temperature dependence of the $ZrTe_5$ electronic properties, studied at equilibrium and out of equilibrium, by means of time and angle resolved photoelectron spectroscopy. Our results unveil the dependence of the electronic band structure across the Fermi energy on the sample temperature. This finding is regarded as the dominant mechanism responsible for the anomalous resistivity…
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We report on the temperature dependence of the $ZrTe_5$ electronic properties, studied at equilibrium and out of equilibrium, by means of time and angle resolved photoelectron spectroscopy. Our results unveil the dependence of the electronic band structure across the Fermi energy on the sample temperature. This finding is regarded as the dominant mechanism responsible for the anomalous resistivity observed at T* $\sim$ 160 K along with the change of the charge carrier character from holelike to electronlike. Having addressed these long-lasting questions, we prove the possibility to control, at the ultrashort time scale, both the binding energy and the quasiparticle lifetime of the valence band. These experimental evidences pave the way for optically controlling the thermoelectric and magnetoelectric transport properties of $ZrTe_5$.
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Submitted 14 January, 2016;
originally announced January 2016.
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Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphe…
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In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $π$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.
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Submitted 5 January, 2016;
originally announced January 2016.
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Tunable Carrier Multiplication and Cooling in Graphene
Authors:
Jens C. Johannsen,
Søren Ulstrup,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Jill A. Miwa,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different do** levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium c…
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Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different do** levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the do** level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.
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Submitted 4 January, 2016;
originally announced January 2016.
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Ramifications of Optical Pum** on the Interpretation of Time-Resolved Photoemission Experiments on Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Alberto Crepaldi,
Jill A. Miwa,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system…
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In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.
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Submitted 5 February, 2015;
originally announced February 2015.
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The momentum and photon energy dependence of the circular dichroic photoemission in the bulk Rashba semiconductors BiTeX (X = I, Br, Cl)
Authors:
A. Crepaldi,
F. Cilento,
M. Zacchigna,
M. Zonno,
J. C. Johannsen,
C. Tournier-Colletta,
L. Moreschini,
I. Vobornik,
F. Bondino,
E. Magnano,
H. Berger,
A. Magrez,
Ph. Bugnon,
G. Autés,
O. V. Yazyev,
M. Grioni,
F. Parmigiani
Abstract:
Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Sp…
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Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Spectroscopy (cd-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon energy dependent study of the cd-ARPES spectra in BiTeX (X = I, Br and Cl). Our work reveals a large variation of the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon energy dependence for the cd-ARPES signals in the bulk Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave-functions involved in the photoemission process. This phase difference can be due to initial or final state effects. In the former case the phase difference results in possible interference effects among the photo-electrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves.
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Submitted 17 September, 2014;
originally announced September 2014.
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Momentum resolved spin dynamics of bulk and surface excited states in the topological insulator $\mathrm{Bi_{2}Se_{3}}$
Authors:
C. Cacho,
A. Crepaldi,
M. Battiato,
J. Braun,
F. Cilento,
M. Zacchigna,
M. C. Richter,
O. Heckmann,
E. Springate,
Y. Liu,
S. S. Dhesi,
H. Berger,
Ph. Bugnon,
K. Held,
M. Grioni,
H. Ebert,
K. Hricovini,
J. Minár,
F. Parmigiani
Abstract:
The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it p…
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The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it possible to comprehensively describe the optically excited electronic states in TIs materials. The experiments performed on $\mathrm{Bi_{2}Se_{3}}$ reveal the existence of a Surface-Resonance-State in the 2nd bulk band gap interpreted on the basis of fully relativistic ab-initio spin resolved photoemission calculations. Remarkably, the spin dependent relaxation of the hot carriers is well reproduced by a spin dynamics model considering two non-interacting electronic systems, derived from the excited surface and bulk states, with different electronic temperatures.
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Submitted 17 September, 2014;
originally announced September 2014.
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Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Jill A. Miwa,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
Richard Chapman,
Emma Springate,
Samir Mammadov,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Phil D. C. King,
Philip Hofmann
Abstract:
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by to…
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Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.
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Submitted 1 March, 2014;
originally announced March 2014.
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Evidence of reduced surface electron-phonon scattering in the conduction band of Bi_{2}Se_{3} by non-equilibrium ARPES
Authors:
A. Crepaldi,
F. Cilento,
B. Ressel,
C. Cacho,
J. C. Johannsen,
M. Zacchigna,
H. Berger,
Ph. Bugnon,
C. Grazioli,
I. C. E. Turcu,
E. Springate,
K. Kern,
M. Grioni,
F. Parmigiani
Abstract:
The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the \emph{surface}. By comparing time-resolved ARPES measurements of the TI Bi_{2}Se_{3} with different probing depths we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This obs…
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The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the \emph{surface}. By comparing time-resolved ARPES measurements of the TI Bi_{2}Se_{3} with different probing depths we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This observation suggests that surface phonons are less effective in cooling the electron gas in the conduction band.
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Submitted 16 October, 2013;
originally announced October 2013.
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Direct view on the ultrafast carrier dynamics in graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Federico Cilento,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
I. C. Edmond Turcu,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene co…
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The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.
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Submitted 9 April, 2013;
originally announced April 2013.
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Ultrafast photodo** and effective Fermi-Dirac distribution of the Dirac particles in Bi2Se3
Authors:
A. Crepaldi,
B. Ressel,
F. Cilento,
M. Zacchigna,
C. Grazioli,
H. Berger,
Ph. Bugnon,
K. Kern,
M. Grioni,
F. Parmigiani
Abstract:
We exploit time- and angle- resolved photoemission spectroscopy to determine the evolution of the out-of-equilibrium electronic structure of the topological insulator Bi2Se. The response of the Fermi-Dirac distribution to ultrashort IR laser pulses has been studied by modelling the dynamics of the hot electrons after optical excitation. We disentangle a large increase of the effective temperature…
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We exploit time- and angle- resolved photoemission spectroscopy to determine the evolution of the out-of-equilibrium electronic structure of the topological insulator Bi2Se. The response of the Fermi-Dirac distribution to ultrashort IR laser pulses has been studied by modelling the dynamics of the hot electrons after optical excitation. We disentangle a large increase of the effective temperature T* from a shift of the chemical potential mu*, which is consequence of the ultrafast photodo** of the conduction band. The relaxation dynamics of T* and mu* are k-independent and these two quantities uniquely define the evolution of the excited charge population. We observe that the energy dependence of the non-equilibrium charge population is solely determined by the analytical form of the effective Fermi-Dirac distribution.
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Submitted 14 December, 2012;
originally announced December 2012.
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Measuring Fermi velocities with ARPES in narrow band systems. The case of layered cobaltates
Authors:
V. Brouet,
A. Nicolaou,
M. Zacchigna,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran
Abstract:
ARPES is a priori a technique of choice to measure the Fermi velocities vF in metals. In correlated systems, it is interesting to compare this experimental value to that obtained in band structure calculations, as deviations are usually taken as a good indicator of the presence of strong electronic correlations. Nevertheless, it is not always straightforward to extract vF from ARPES spectra. We st…
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ARPES is a priori a technique of choice to measure the Fermi velocities vF in metals. In correlated systems, it is interesting to compare this experimental value to that obtained in band structure calculations, as deviations are usually taken as a good indicator of the presence of strong electronic correlations. Nevertheless, it is not always straightforward to extract vF from ARPES spectra. We study here the case of layered cobaltates, an interesting family of correlated metals. We compare the results obtained by standard methods, namely the fit of spectra at constant momentum k (energy distribution curve, EDC) or constant binding energy omega(momentum distribution curve, MDC). We find that the difference of vF between the two methods can be as large as a factor 2. The reliability of the 2 methods is intimately linked to the degree of k- and omega-dependence of the electronic self-energy. As the k-dependence is usually much smaller than the omega dependence for a correlated system, the MDC analysis is generally expected to give more reliable results. However, we review here several examples within cobaltates, where the MDC analysis apparently leads to unphysical results, while the EDC analysis appears coherent. We attribute the difference between the EDC and MDC analysis to a strong variation of the photoemission intensity with the momentum k. This distorts the MDC lineshapes but does not affect the EDC ones. Simulations including a k dependence of the intensity allow to reproduce the difference between MDC and EDC analysis very well. This momentum dependence could be of extrinsic or intrinsic. We argue that the latter is the most likely and actually contains valuable information on the nature of the correlations that would be interesting to extract further.
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Submitted 19 November, 2012;
originally announced November 2012.
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New electronic orderings observed in cobaltates under the influence of misfit periodicities
Authors:
A. Nicolaou,
V. Brouet,
M. Zacchigna,
I. Vobornik,
A. Tejeda,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
C. Chambon,
S. Kubsky,
S. Hébert,
H. Muguerra,
D. Grebille
Abstract:
We study with ARPES the electronic structure of CoO2 slabs, stacked with rock-salt (RS) layers exhibiting a different (misfit) periodicity. Fermi Surfaces (FS) in phases with different do** and/or periodicities reveal the influence of the RS potential on the electronic structure. We show that these RS potentials are well ordered, even in incommensurate phases, where STM images reveal broad strip…
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We study with ARPES the electronic structure of CoO2 slabs, stacked with rock-salt (RS) layers exhibiting a different (misfit) periodicity. Fermi Surfaces (FS) in phases with different do** and/or periodicities reveal the influence of the RS potential on the electronic structure. We show that these RS potentials are well ordered, even in incommensurate phases, where STM images reveal broad stripes with width as large as 80Å. The anomalous evolution of the FS area at low do**s is consistent with the localization of a fraction of the electrons. We propose that this is a new form of electronic ordering, induced by the potential of the stacked layers (RS or Na in NaxCoO2) when the FS becomes smaller than the Brillouin Zone of the stacked structure.
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Submitted 12 March, 2010;
originally announced March 2010.
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Experimental study of the incoherent spectral weight in the photoemission spectra of the misfit cobaltate [Bi2Ba2O4][CoO2]2
Authors:
A. Nicolaou,
V. Brouet,
M. Zacchigna,
I. Vobornik,
A. Tejeda,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
S. Hébert,
H. Muguerra,
D. Grebille
Abstract:
Previous ARPES experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi leve…
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Previous ARPES experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi level. We show that one can use their relative weight to estimate self-consistently the quasiparticle weight Z, which turns out to be very small Z=0.15 +/- 0.05. We suggest this method could be a reliable way to study the evolution of correlations in cobaltates and for comparison with other strongly correlated systems.
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Submitted 12 March, 2010;
originally announced March 2010.
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Direct observation of strong correlations near the band insulator regime of Bi misfit cobaltates
Authors:
V. Brouet,
A. Nicolaou,
M. Zacchigna,
A. Tejeda,
L. Patthey,
S. Hebert,
W. Kobayashi,
H. Muguerra,
D. Grebille
Abstract:
We present the first angle-resolved photoemission (ARPES) measurement of Fermi Surface in the "misfit" cobaltate [Bi2Ba2O4].[CoO2]~2. This compound contains the same triangular Co planes as Na cobaltates, but in a different 3D environment. Our data establish the similarity of their electronic structure. We propose that the peculiar lineshape of all cobaltates is of the "peak-dip-hump" type, due…
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We present the first angle-resolved photoemission (ARPES) measurement of Fermi Surface in the "misfit" cobaltate [Bi2Ba2O4].[CoO2]~2. This compound contains the same triangular Co planes as Na cobaltates, but in a different 3D environment. Our data establish the similarity of their electronic structure. We propose that the peculiar lineshape of all cobaltates is of the "peak-dip-hump" type, due to strong many-body effects. We detect a progressive transfer of spectral weight from the quasiparticle feature near Ef to a broad hump in misfit phases where Ba is replaced by Sr or Ca. This indicates stronger many-body interactions in proximity of the band insulator regime, which we attribute to the presence of unusual magnetic excitations.
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Submitted 26 June, 2007;
originally announced June 2007.
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Evolution of the quasiparticle spectral function in cuprates
Authors:
S. Misra,
R. Gatt,
T. Schmauder,
Andrey V. Chubukov,
M. Onellion,
M. Zacchigna,
I. Vobornik,
F. Zwick,
M. Grioni,
G. Margaritondo,
C. Quitmann,
C. Kendziora
Abstract:
We analyzed photoemssion data for several do** levels of the Bi_2Sr_2CaCu_2O_{8+x} compounds, ranging from overdoped to underdoped. We show that the high frequency part of the spectra near (0,π) can be described by Fermi liquid theory in the overdoped regime, but exhibits a non-Fermi liquid behavior in the underdoped regime. We further demonstrate that this novel behavior fits reasonably well…
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We analyzed photoemssion data for several do** levels of the Bi_2Sr_2CaCu_2O_{8+x} compounds, ranging from overdoped to underdoped. We show that the high frequency part of the spectra near (0,π) can be described by Fermi liquid theory in the overdoped regime, but exhibits a non-Fermi liquid behavior in the underdoped regime. We further demonstrate that this novel behavior fits reasonably well to a 1/\sqrtω behavior suggested for systems with strong spin fluctuations.
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Submitted 22 May, 1998;
originally announced May 1998.
