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Phonon-assisted tunneling through quantum dot systems connected to Majorana bound states
Authors:
Levente Máthé,
Zoltán Kovács-Krausz,
Ioan Botiz,
Ioan Grosu,
Khadija El Anouz,
Abderrahim El Allati,
Liviu P. Zârbo
Abstract:
We theoretically analyze phonon-assisted tunneling transport in a quantum dot side-connected to a Majorana bound state in a topological superconducting nanowire. We investigate the behavior of the current through the dot, for a range of experimentally relevant parameters, in the presence of one long-wave optical phonon. We consider the current-gate voltage, the current-bias voltage, and the curren…
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We theoretically analyze phonon-assisted tunneling transport in a quantum dot side-connected to a Majorana bound state in a topological superconducting nanowire. We investigate the behavior of the current through the dot, for a range of experimentally relevant parameters, in the presence of one long-wave optical phonon. We consider the current-gate voltage, the current-bias voltage, and the current-dot-Majorana coupling characteristics under the influence of the electron-phonon coupling. In the absence of electron-phonon interaction, the Majorana bound states suppress the current when the gate voltage matches the Fermi level, but the increase of the bias voltage counteracts this effect. In the presence of electron-phonon coupling, the current behaves similarly as a function of the renormalized gate voltage. As an added feature at large bias voltages, it presents a dip or a plateau, depending on the size of dot-Majorana coupling. Lastly, we show that the currents are most sensitive to, and depend non-trivially on the parameters of the Majorana circuit element, in the regime of low temperatures combined with low voltages. Our results provide insights into the complex physics of quantum dot devices used to probe Majorana bound states.
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Submitted 22 March, 2023;
originally announced March 2023.
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Operating in a deep underground facility improves the locking of gradiometric fluxonium qubits at the sweet spots
Authors:
Daria Gusenkova,
Francesco Valenti,
Martin Spiecker,
Simon Günzler,
Patrick Paluch,
Dennis Rieger,
Larisa-Milena Pioraş-Ţimbolmaş,
Liviu P. Zârbo,
Nicola Casali,
Ivan Colantoni,
Angelo Cruciani,
Stefano Pirro,
Laura Cardani,
Alexandru Petrescu,
Wolfgang Wernsdorfer,
Patrick Winkel,
Ioan M. Pop
Abstract:
We demonstrate flux-bias locking and operation of a gradiometric fluxonium artificial atom using two symmetric granular aluminum (grAl) loops to implement the superinductor. The gradiometric fluxonium shows two orders of magnitude suppression of sensitivity to homogeneous magnetic fields, which can be an asset for hybrid quantum systems requiring strong magnetic field biasing. By cooling down the…
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We demonstrate flux-bias locking and operation of a gradiometric fluxonium artificial atom using two symmetric granular aluminum (grAl) loops to implement the superinductor. The gradiometric fluxonium shows two orders of magnitude suppression of sensitivity to homogeneous magnetic fields, which can be an asset for hybrid quantum systems requiring strong magnetic field biasing. By cooling down the device in an external magnetic field while crossing the metal-to-superconductor transition, the gradiometric fluxonium can be locked either at $0$ or $Φ_0/2$ effective flux bias, corresponding to an even or odd number of trapped fluxons, respectively. At mK temperatures, the fluxon parity prepared during initialization survives to magnetic field bias exceeding $100 \,Φ_0$. However, even for states biased in the vicinity of $1 \,Φ_0$, we observe unexpectedly short fluxon lifetimes of a few hours, which cannot be explained by thermal or quantum phase slips. When operating in a deep-underground cryostat of the Gran Sasso laboratory, the fluxon lifetimes increase to days, indicating that ionizing events activate phase slips in the grAl superinductor.
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Submitted 24 January, 2022;
originally announced January 2022.
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Quantum transport through a quantum dot side-coupled to a Majorana bound state pair in the presence of electron-phonon interaction
Authors:
Levente Máthé,
Doru Sticlet,
Liviu P. Zârbo
Abstract:
We theoretically study quantum transport through a quantum dot coupled to Majorana bound states confined at the ends of a topological superconducting nanowire. The topological superconductor forms a loop and is threaded by a tunable magnetic flux, which allows one to control the electron transport in the system. In particular, we investigate phonon-assisted transport properties in the device when…
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We theoretically study quantum transport through a quantum dot coupled to Majorana bound states confined at the ends of a topological superconducting nanowire. The topological superconductor forms a loop and is threaded by a tunable magnetic flux, which allows one to control the electron transport in the system. In particular, we investigate phonon-assisted transport properties in the device when the central quantum dot interacts with a single long-wave optical phonon mode. We find that when the two Majorana bound states are unhybridized, the zero-temperature linear conductance has a $2π$ periodicity as a function of magnetic flux phase, independent of the electron-phonon interaction, the quantum dot energy, or the finite values of dot-Majorana couplings. For a finite overlap between the Majorana bound states, the linear conductance periodicity generally changes to $4π$ either due to a finite electron-phonon coupling strength, or a dot energy level that is tuned away from the Fermi level. Additionally, the differential conductance periodicity changes from $2π$ to $4π$ when the Majorana bound states hybridize and the electron-phonon coupling is finite. Our results provide insight into transport signatures expected in topological quantum computational platforms that integrate quantum dots as a means for Majorana qubit readout. The energy exchange with an environmental bath, here a single phonon mode, significantly alters the current signatures expected from Majorana modes.
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Submitted 22 April, 2022; v1 submitted 12 July, 2021;
originally announced July 2021.
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First-principles Modelling of SrTiO3 based Oxides for Thermoelectric Applications
Authors:
Daniel I. Bilc,
Calin G. Floare,
Liviu P. Zarbo,
Sorina Garabagiu,
Sebastien Lemal,
Philippe Ghosez
Abstract:
Using first-principles electronic structure calculations, we studied the electronic and thermoelectric properties of SrTiO3 based oxide materials and their nanostructures identifying those nanostructures which possess highly anisotropic electronic bands. We showed recently that highly anisotropic flat-and-dispersive bands can maximize the thermoelectric power factor, and at the same time they can…
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Using first-principles electronic structure calculations, we studied the electronic and thermoelectric properties of SrTiO3 based oxide materials and their nanostructures identifying those nanostructures which possess highly anisotropic electronic bands. We showed recently that highly anisotropic flat-and-dispersive bands can maximize the thermoelectric power factor, and at the same time they can produce low dimensional electronic transport in bulk semiconductors. Although most of the considered nanostructures show such highly anisotropic bands, their predicted thermoelectric performance is not improved over that of SrTiO3. Besides highly anisotropic character, we emphasize the importance of the large weights of electronic states participating in transport and the small effective mass of charge carriers along the transport direction. These requirements may be better achieved in binary transition metal oxides than in ABO3 perovskite oxide materials.
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Submitted 24 May, 2016;
originally announced May 2016.
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Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors
Authors:
M. F. Gonzalez-Zalba,
C. Ciccarelli,
L. P. Zarbo,
A. C. Irvine,
R. P. Campion,
B. L. Gallagher,
T. Jungwirth,
A. J. Ferguson,
J. Wunderlich
Abstract:
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coul…
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We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.
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Submitted 6 April, 2015;
originally announced April 2015.
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Intraband and interband spin-orbit torques in non-centrosymmetric ferromagnets
Authors:
Hang Li,
H. Gao,
Liviu P. Zârbo,
K. Výborný,
Xuhui Wang,
Ion Garate,
Fatih Doǧan,
A. Čejchan,
Jairo Sinova,
T. Jungwirth,
Aurélien Manchon
Abstract:
Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using Kubo formula. In addition to the current-driven field-like torque ${\bf T}_{\rm FL}= τ_{\rm FL}{\bf m}\times{\bf u}_{\rm so}$ (${\bf u}_{\rm so}$ being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intr…
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Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using Kubo formula. In addition to the current-driven field-like torque ${\bf T}_{\rm FL}= τ_{\rm FL}{\bf m}\times{\bf u}_{\rm so}$ (${\bf u}_{\rm so}$ being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-dam**-like torque of the form ${\bf T}_{\rm DL}= τ_{\rm DL}{\bf m}\times({\bf u}_{\rm so}\times{\bf m})$. Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchanged coupled to the Mn moments. Parametric dependences of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described.
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Submitted 14 January, 2015;
originally announced January 2015.
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Observation of a Berry phase anti-dam** spin-orbit torque
Authors:
H. Kurebayashi,
Jairo Sinova,
D. Fang,
A. C. Irvine,
J. Wunderlich,
V. Novak,
R. P. Campion,
B. L. Gallagher,
E. K. Vehstedt,
L. P. Zarbo,
K. Vyborny,
A. J. Ferguson,
T. Jungwirth
Abstract:
Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative…
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Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-dam** STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-dam** SOT stemming from an analogous Berry phase effect to the SHE. The SOT alone can therefore induce magnetization dynamics based on a scattering-independent principle. The ferromagnetic semiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in the crystal. This allows us to consider a bare ferromagnetic element which eliminates by design any SHE related contribution to the spin torque. We provide an intuitive picture of the Berry phase origin of the anti-dam** SOT and a microscopic modeling of measured data.
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Submitted 8 June, 2013;
originally announced June 2013.
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Spin gating electrical current
Authors:
C. Ciccarelli,
L. P. Zarbo,
A. C. Irvine,
R. P. Campion,
B. L. Gallagher,
J. Wunderlich,
T. Jungwirth,
A. J. Ferguson
Abstract:
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-…
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We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport.
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Submitted 23 April, 2012; v1 submitted 12 March, 2012;
originally announced March 2012.
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Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique
Authors:
D. Fang,
H. Kurebayashi,
J. Wunderlich,
K. Vyborny,
L. P. Zarbo,
R. P. Campion,
A. Casiraghi,
B. L. Gallagher,
T. Jungwirth,
A. J. Ferguson
Abstract:
We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferroma…
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We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferromagnetic resonance lineshape, we perform vector magnetometry on the current-induced driving field, observing contributions with symmetries of both the Dresselhaus and Rashba spin-orbit interactions.
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Submitted 10 December, 2010;
originally announced December 2010.
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Modeling of diffusion of injected electron spins in spin-orbit coupled microchannels
Authors:
Liviu P. Zarbo,
Jairo Sinova,
Irena Knezevic,
J. Wunderlich,
T. Jungwirth
Abstract:
We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and spin-diffusion lengths on the strengths of spin-orbit interaction and external magnetic fields, microchannel width, and orientation. Our results are based on num…
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We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and spin-diffusion lengths on the strengths of spin-orbit interaction and external magnetic fields, microchannel width, and orientation. Our results are based on numerical Monte Carlo simulations and on approximate analytical formulas, both treating the spin dynamics quantum-mechanically. We conclude that spin-diffusion lengths comparable or larger than the precession-length occur i) in the vicinity of the persistent spin helix regime for arbitrary channel width, and ii) in channels of similar or smaller width than the precession length, independent of the ratio of Rashba and Dresselhaus fields. For similar strengths of the Rashba and Dresselhaus fields, the steady-state spin-density oscillates or remains constant along the channel for channels parallel to the in-plane diagonal crystal directions. An oscillatory spin-polarization pattern tilted by 45$^{\circ}$ with respect to the channel axis is predicted for channels along the main cubic crystal directions. For typical experimental system parameters, magnetic fields of the order of Tesla are required to affect the spin-diffusion and spin-precession lengths.
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Submitted 20 November, 2010; v1 submitted 24 August, 2010;
originally announced August 2010.
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Spin Hall effect transistor
Authors:
J. Wunderlich,
B. G. Park,
A. C. Irvine,
L. P. Zarbo,
E. Rozkotova,
P. Nemec,
V. Novak,
Jairo Sinova,
T. Jungwirth
Abstract:
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transis…
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Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel.
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Submitted 17 August, 2010;
originally announced August 2010.
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Spin Currents in Semiconductor Nanostructures: A Nonequilibrium Green-Function Approach
Authors:
Branislav K. Nikolic,
Liviu P. Zarbo,
Satofumi Souma
Abstract:
This chapter of "The Oxford Handbook of Nanoscience and Technology: Frontiers and Advances" reviews nonequilibrium Green function (NEGF) approach to modeling spin current generation, transport, and detection in semiconductor nanostructures containing different types of spin-orbit (SO) couplings. Its tutorial style--with examples drawn from the field of the spin Hall effects (SHEs) and with treat…
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This chapter of "The Oxford Handbook of Nanoscience and Technology: Frontiers and Advances" reviews nonequilibrium Green function (NEGF) approach to modeling spin current generation, transport, and detection in semiconductor nanostructures containing different types of spin-orbit (SO) couplings. Its tutorial style--with examples drawn from the field of the spin Hall effects (SHEs) and with treatment of the Rashba, Dresselhaus and extrinsic SO couplings--offers practical recipes to compute total spin and charge currents flowing out of the device, as well as the nonequilibrium local spin densities and spin fluxes within the multiterminal nanostructure. These quantities, which are obtained from the knowledge of spin-resolved NEGFs that can describe both ballistic and diffusive transport regimes while handling phase-coherent effects or dephasing mechanisms relevant at room temperature, can be employed to understand recent experiments on all-electrical detection of mesoscopic and quantum SHE in complicated low-dimensional nanostructures, as well as to model a multitude of "second generation" spintronic devices exploiting coherent spin dynamics. The chapter also provides extensive coverage of relevant technical and computational details, such as: (i) the construction of retarded and lesser Green functions for SO-coupled nanostructures attached to many electrodes; (ii) computation of self-energies introduced by different types of electrodes attached to the central region; and (iii) accelerated algorithms for NEGF evaluation that make possible spin transport modeling in devices of the size comparable to the spin precession length (typically few hundreds of nanometers) that sets the scale where mesoscopic SHE effect in ballistic SO-coupled nanostructures is expected to reach its optimal magnitude.
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Submitted 23 July, 2009;
originally announced July 2009.
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Spin and Charge Shot Noise in Mesoscopic Spin Hall Systems
Authors:
R. L. Dragomirova,
L. P. Zarbo,
B. K. Nikolic
Abstract:
Injection of unpolarized charge current through the longitudinal leads of a four-terminal two-dimensional electron gas with the Rashba spin-orbit (SO) coupling and/or SO scattering off extrinsic impurities is responsible not only for the pure spin Hall current in the transverse leads, but also for random time-dependent current fluctuations. We employ the scattering approach to current-current co…
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Injection of unpolarized charge current through the longitudinal leads of a four-terminal two-dimensional electron gas with the Rashba spin-orbit (SO) coupling and/or SO scattering off extrinsic impurities is responsible not only for the pure spin Hall current in the transverse leads, but also for random time-dependent current fluctuations. We employ the scattering approach to current-current correlations in multiterminal nanoscale conductors to analyze the shot noise of transverse pure spin Hall and zero charge current, or transverse spin current and non-zero charge Hall current, driven by unpolarized or spin-polarized longitudinal current, respectively. Since any spin-flip acts as an additional source of noise, we argue that these shot noises offer a unique tool to differentiate between intrinsic and extrinsic SO mechanisms underlying the spin Hall effect in paramagnetic devices.
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Submitted 14 April, 2008;
originally announced April 2008.
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Nanomechanical Spin-Polarizer
Authors:
Alexey A. Kovalev,
Liviu P. Zârbo,
Y. Tserkovnyak,
G. E. W. Bauer,
Jairo Sinova
Abstract:
Torsional oscillations of a free-standing semiconductor beam are shown to cause spin-dependent oscillating potentials that spin-polarize an applied charge current in the presence of intentional or disorder scattering potentials. We propose several realizations of mechanical spin generators and manipulators based on this piezo-spintronic effect.
Torsional oscillations of a free-standing semiconductor beam are shown to cause spin-dependent oscillating potentials that spin-polarize an applied charge current in the presence of intentional or disorder scattering potentials. We propose several realizations of mechanical spin generators and manipulators based on this piezo-spintronic effect.
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Submitted 28 November, 2007;
originally announced November 2007.
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Spatial distribution of local currents of massless Dirac fermions in quantum transport through graphene nanoribbons
Authors:
Liviu P. Zarbo,
Branislav K. Nikolic
Abstract:
We employ the formalism of bond currents, expressed in terms of the nonequilibrium Green functions, to image the charge flow between two sites of the honeycomb lattice of graphene ribbons of few nanometers width. In sharp contrast to nonrelativistic electrons, current density profiles of quantum transport at energies close to the Dirac point in clean zigzag graphene nanoribbons (ZGNR) differs ma…
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We employ the formalism of bond currents, expressed in terms of the nonequilibrium Green functions, to image the charge flow between two sites of the honeycomb lattice of graphene ribbons of few nanometers width. In sharp contrast to nonrelativistic electrons, current density profiles of quantum transport at energies close to the Dirac point in clean zigzag graphene nanoribbons (ZGNR) differs markedly from the profiles of charge density peaked at the edges due to zero-energy localized edge states. For transport through the lowest propagating mode induced by these edge states, edge vacancies do not affect current density peaked in the center of ZGNR. The long-range potential of a single impurity acts to reduce local current around it while concurrently increasing the current density along the zigzag edge, so that ZGNR conductance remains perfect $G=2e^2/h$.
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Submitted 18 April, 2007;
originally announced April 2007.
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Extrinsic Entwined with Intrinsic Spin Hall Effect in Disordered Mesoscopic Bars
Authors:
Branislav K. Nikolic,
Liviu P. Zarbo
Abstract:
We show that pure spin Hall current, flowing out of a four-terminal phase-coherent two-dimensional electron gas (2DEG) within inversion asymmetric semiconductor heterostructure, contains contributions from both the extrinsic mechanisms (spin-orbit dependent scattering off impurities) and the intrinsic ones (due to the Rashba coupling). While the extrinsic contribution vanishes in the weakly and…
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We show that pure spin Hall current, flowing out of a four-terminal phase-coherent two-dimensional electron gas (2DEG) within inversion asymmetric semiconductor heterostructure, contains contributions from both the extrinsic mechanisms (spin-orbit dependent scattering off impurities) and the intrinsic ones (due to the Rashba coupling). While the extrinsic contribution vanishes in the weakly and strongly disordered limits, and the intrinsic one dominates in the quasiballistic limit, in the crossover transport regime the spin Hall conductance, exhibiting sample-to-sample large fluctuations and sign change, is not simply reducible to either of the two mechanisms, which can be relevant for interpretation of experiments on dirty 2DEGs [V. Sih et al., Nature Phys. 1, 31 (2005)].
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Submitted 22 March, 2006;
originally announced March 2006.
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Imaging mesoscopic spin Hall flow: Spatial distribution of local spin currents and spin densities in and out of multiterminal spin-orbit coupled semiconductor nanostructures
Authors:
Branislav K. Nikolic,
Liviu P. Zarbo,
Satofumi Souma
Abstract:
We introduce the concept of bond spin current, which describes the spin transport between two sites of the lattice model of a multiterminal spin-orbit (SO) coupled semiconductor nanostructure, and express it in terms of the spin-dependent nonequilibrium (Landauer-Keldysh) Green functions of the device. This formalism is applied to obtain the spatial distribution of microscopic spin currents in {…
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We introduce the concept of bond spin current, which describes the spin transport between two sites of the lattice model of a multiterminal spin-orbit (SO) coupled semiconductor nanostructure, and express it in terms of the spin-dependent nonequilibrium (Landauer-Keldysh) Green functions of the device. This formalism is applied to obtain the spatial distribution of microscopic spin currents in {\em clean} phase-coherent two-dimensional electron gas with the Rashba-type of SO coupling attached to four external leads. Together with the corresponding profiles of the stationary spin density, such visualization of the phase-coherent spin flow allow us to resolve several key issues for the understanding of mechanisms which generate pure spin Hall currents in the transverse leads of ballistic devices due to the flow of unpolarized charge current through their longitudinal leads. The local spin current profiles crucially depend on whether the sample is smaller or greater than the spin precession length, thereby demonstrating its essential role as the characteristic mesoscale for the spin Hall effect in ballistic multiterminal semiconductor nanostructures. Although static spin-independent disorder reduces the magnitude of the total spin current in the leads, the bond spin currents continue to flow through the whole diffusive 2DEG sample, without being localized as edge spin currents around any of its boundaries.
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Submitted 23 June, 2005;
originally announced June 2005.
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Transverse Spin-Orbit Force in the Spin Hall Effect in Ballistic Semiconductor Wires
Authors:
Branislav K. Nikolic,
Liviu P. Zarbo,
Sven Welack
Abstract:
We introduce the spin and momentum dependent {\em force operator} which is defined by the Hamiltonian of a {\em clean} semiconductor quantum wire with homogeneous Rashba spin-orbit (SO) coupling attached to two ideal (i.e., free of spin and charge interactions) leads. Its expectation value in the spin-polarized electronic wave packet injected through the leads explains why the center of the pack…
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We introduce the spin and momentum dependent {\em force operator} which is defined by the Hamiltonian of a {\em clean} semiconductor quantum wire with homogeneous Rashba spin-orbit (SO) coupling attached to two ideal (i.e., free of spin and charge interactions) leads. Its expectation value in the spin-polarized electronic wave packet injected through the leads explains why the center of the packet gets deflected in the transverse direction. Moreover, the corresponding {\em spin density} will be dragged along the transverse direction to generate an out-of-plane spin accumulation of opposite signs on the lateral edges of the wire, as expected in the phenomenology of the spin Hall effect, when spin-$\uparrow$ and spin-$\downarrow$ polarized packets (mimicking the injection of conventional unpolarized charge current) propagate simultaneously through the wire. We also demonstrate that spin coherence of the injected spin-polarized wave packet will gradually diminish (thereby diminishing the ``force'') along the SO coupled wire due to the entanglement of spin and orbital degrees of freedom of a single electron, even in the absence of any impurity scattering.
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Submitted 22 June, 2005; v1 submitted 17 March, 2005;
originally announced March 2005.
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Can Non-Equilibrium Spin Hall Accumulation be Induced in Ballistic Nanostructures?
Authors:
Branislav K. Nikolic,
Satofumi Souma,
Liviu P. Zarbo,
Jairo Sinova
Abstract:
We demonstrate that flow of longitudinal unpolarized current through a ballistic two-dimensional electron gas with Rashba spin-orbit coupling will induce nonequilibrium spin accumulation which has opposite sign for the two lateral edges and it is, therefore, the principal observable signature of the spin Hall effect in two-probe semiconductor nanostructures. The magnitude of its out-of-plane com…
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We demonstrate that flow of longitudinal unpolarized current through a ballistic two-dimensional electron gas with Rashba spin-orbit coupling will induce nonequilibrium spin accumulation which has opposite sign for the two lateral edges and it is, therefore, the principal observable signature of the spin Hall effect in two-probe semiconductor nanostructures. The magnitude of its out-of-plane component is gradually diminished by static disorder, while it can be enhanced by an in-plane transverse magnetic field. Moreover, our prediction of the longitudinal component of the spin Hall accumulation, which is insensitive to the reversal of the bias voltage, offers a smoking gun to differentiate experimentally between the extrinsic, intrinsic, and mesoscopic spin Hall mechanisms.
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Submitted 20 July, 2005; v1 submitted 21 December, 2004;
originally announced December 2004.
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Mesoscopic Spin Hall Effect in Multiprobe Ballistic Spin-Orbit Coupled Semiconductor Bridges
Authors:
Branislav K. Nikolic,
Liviu P. Zarbo,
Satofumi Souma
Abstract:
We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas (2DEG) in semiconductor heterostructure will induce a {\em pure} spin current, which is not accompanied by any net charge flow, in the transverse voltage probes. Its magnitude can be tuned by the Rashba spin-orbit (SO) interaction and, moreover, it…
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We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas (2DEG) in semiconductor heterostructure will induce a {\em pure} spin current, which is not accompanied by any net charge flow, in the transverse voltage probes. Its magnitude can be tuned by the Rashba spin-orbit (SO) interaction and, moreover, it is resilient to weak spin-independent scattering off impurities within the metallic diffusive regime. While the polarization vector of the spin transported through the transverse leads is not orthogonal to the plane of 2DEG, we demonstrate that only two components (out-of-plane and longitudinal) of the transverse spin current are signatures of the spin Hall effect in four-probe Rashba spin-split semiconductor nanostructures. The linear response spin Hall current, obtained from the multiprobe Landauer-B\" uttiker scattering formalism generalized for quantum transport of spin, is the Fermi-surface determined nonequilibrium quantity whose scaling with the 2DEG size $L$ reveals the importance of processes occurring on the spin precession {\em mesoscale} $L_{\rm SO}$ (on which spin precesses by an angle $π$)--the out-of-plane component of the transverse spin current exhibits quasioscillatory behavior for $L \lesssim L_{\rm SO}$ (attaining the maximum value in 2DEGs of the size $L_{\rm SO} \times L_{\rm SO}$), while it reaches the asymptotic value in the macroscopic regime $L \gg L_{\rm SO}$. Furthermore, these values of the spin Hall current can be manipulated by the measuring geometry defined by the attached leads.
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Submitted 22 June, 2005; v1 submitted 31 August, 2004;
originally announced August 2004.
