Showing 1–50 of 61 results for author: Yuryev, V A

Extended defects as a source of phonon confinement in polycrystalline Si and Ge films

Authors: Larisa V. Arapkina, Kirill V. Chizh, Oleg V. Uvarov, Valery V. Voronov, Vladimir P. Dubkov, Mikhail S. Storozhevykh, Maksim V. Poliakov, Lidiya S. Volkova, Polina A. Edelbekova, Alexey A. Klimenko, Alexander A. Dudin, Vladimir A. Yuryev

Abstract: We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the poly-films have been studied by XRD and TEM. The Raman spectra are characterized by appearance of the additional wide peaks around 500 cm$^{-1}$ and 290 cm$^{-1}$ in… ▽ More We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the poly-films have been studied by XRD and TEM. The Raman spectra are characterized by appearance of the additional wide peaks around 500 cm$^{-1}$ and 290 cm$^{-1}$ in the main vibrational bands of TO(c-Si) and TO(c-Ge) phonons, respectively. It is shown that these peaks correspond to scattering in grain boundary area. For the poly-Si films, both a downward shift and an asymmetrical broadening of the vibrational band of TO(c-Si) near 520 cm$^{-1}$ are observed, whereas there is only a symmetric broadening in the spectra of poly-Ge. The Raman line shape has been modeled within the framework of the phonon confinement theory taking into account the sizes of coherent scattering domains obtained using XRD. The model includes a symmetrical band broadening observed in polycrystalline films. It is shown that confinement of phonon propagation might be in the poly-Si films. The phonon dispersion and the density of phonon states have been simulated using density functional theory. It has been found that phonon confinement relates to grain boundaries rather than other extended defects such as twins (multiple twins, twin boundaries), the appearance of which does not lead to significant changes in phonon dispersion and density of phonon states. △ Less

Submitted 7 February, 2024; originally announced March 2024.

Comments: 46 pages, 23 figures, 1 table

Journal ref: Materials Science in Semiconductor Processing 181 (2024) 108659

Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

Authors: Larisa V. Arapkina, Kirill V. Chizh, Vladimir P. Dubkov, Mikhail S. Storozhevykh, Vladimir A. Yuryev

Abstract: The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the Ge wetting layer. Besides the well-known sequence of surface reconstructions ($2 \times 1 \rightarrow 2 \times N \rightarrow M \times N$ patches) and hut clust… ▽ More The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the Ge wetting layer. Besides the well-known sequence of surface reconstructions ($2 \times 1 \rightarrow 2 \times N \rightarrow M \times N$ patches) and hut clusters faceted with {105} planes, the formation of isolated {105} planes, which faceted the edges of $M \times N$ patches, has been observed owing to the deposition of Ge on a rough Si/Si (001) surface. A model of the isolated {105} facet formation has been proposed based on the assumption that the mutual arrangement of the monoatomic steps on the initial Si surface promotes the wetting layer formation with the inhomogeneously distributed thickness that results in the appearance of $M \times N$ patches partially surrounded by deeper trenches than those observed in the usual Ge wetting layer grown on the smooth Si(001) surface. Isolated {105} facets are an inherent part of the Ge wetting layer structure and their formation decreases the surface energy of the Ge wetting layer. △ Less

Submitted 6 July, 2022; originally announced August 2022.

Comments: 27 pages, 8 figures

Journal ref: Applied Surface Science, 608 (2023) 155094

Thermal-fluctuation mechanism of long-term corrosion of glass caused by internal stress: processes of depolymerization, impurity migration and fracturing on an atomic scale

Authors: Irina F. Kadikova, Tatyana V. Yuryeva, Ekaterina A. Morozova, Irina A. Grigorieva, Ilya B. Afanasyev, Vladimir Y. Karpenko, Vladimir A. Yuryev

Abstract: Long-term corrosion of glass is studied using polarising light microscopy, FTIR and SEM including EDX and elemental map**. Early 19th century beads made of lead-potassium glass are the object of the study. Non-uniformly distributed internal stresses were introduced into the studied glass during bead manufacturing. Corrosion of 19th century bead glass has been shown to comprise several mutually c… ▽ More Long-term corrosion of glass is studied using polarising light microscopy, FTIR and SEM including EDX and elemental map**. Early 19th century beads made of lead-potassium glass are the object of the study. Non-uniformly distributed internal stresses were introduced into the studied glass during bead manufacturing. Corrosion of 19th century bead glass has been shown to comprise several mutually connected processes develo** in parallel and intensifying one another. These processes are the depolymerization of glass, the directed migration of alkali-metal impurities and local glass leaching, and the nucleation of micro discontinuities followed by the formation of micro cracks and their gradual growth. In course of time, their cumulative and apparently synergistic effect results in glass fracturing terminated with bead crumbling into tiny discoloured particles. All these phenomena are controlled by the internal stress originated from the bead production process. Thus, the phenomenon of stressed bead glass corrosion is the process of the internal stress relaxation in glass through the nucleation and growth of cracks, which lasts for many decades at room temperature. It is dramatically accelerated when beads are heat treated. Annealing at 300°C for 15 min. is sufficient for artificial ageing of initially intact beads. The corrosion has been observed to occur in glass even if beads are kept in well-controlled museum environment. The local thermal-fluctuation mechanism is proposed to account for the corrosion phenomenon on an atomic scale. The approach based on the thermal-fluctuation mechanism is applicable to describe degradation and destruction processes in various solid substances and composite materials under stress; this approach enables understanding the phenomena of formation and degradation of nanostructures, e. g., heterostructures with quantum wells or quantum dots. △ Less

Submitted 2 February, 2023; v1 submitted 3 January, 2022; originally announced January 2022.

Comments: 81 pages, 14 figures, 2 tables

Influence of the thickness of Si and Ge films deposited on Si$_3$N$_4$/SiO$_2$/Si substrates on their structure and diffusion of hydrogen atoms from Si$_3$N$_4$ layers

Authors: Larisa V. Arapkina, Kirill V. Chizh, Dmitry B. Stavrovskii, Alexey A. Klimenko, Alexander A. Dudin, Vladimir P. Dubkov, Mikhail S. Storozhevykh, Vladimir A. Yuryev

Abstract: The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the intensity of the N$-$H and Si$-$N absorption bands have been observed in the IR absorbance spectra as a result of the deposition of the silicon and germanium fi… ▽ More The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the intensity of the N$-$H and Si$-$N absorption bands have been observed in the IR absorbance spectra as a result of the deposition of the silicon and germanium films. The thicker was the deposited film, the more considerable were the decrease of N$-$H absorption band intensity and the increase in that of the Si$-$N band. This tendency has been observed during the growth of both amorphous and polycrystalline Si or Ge films. The reduction of IR absorption at the band assigned to the N$-$H bond vibration is explained by breaking of these bonds followed by the diffusion of the hydrogen atoms from the Si$_3$N$_4$ layer into the growing film of silicon or germanium. The effect of the deposited film thickness on the diffusion of hydrogen is discussed within a model of the diffusion of hydrogen atoms controlled by the difference in chemical potentials of hydrogen atoms in the dielectric Si$_3$N$_4$ layer and the growing silicon or germanium film. Hydrogen atoms escape from the Si$_3$N$_4$ layer only during the deposition of a Si or Ge film when its thickness gradually grows. The interruption of the film growth stops the migration of hydrogen atoms into the film because of the decline in the chemical potential difference. △ Less

Submitted 29 December, 2021; originally announced January 2022.

Comments: 45 pages, 17 figures

Crystals in the 19th century glass beads

Authors: Irina F. Kadikova, Tatyana V. Yuryeva, Ekaterina A. Morozova, Irina A. Grigorieva, Maria V. Lukashova, Ilya B. Afanasyev, Andrey A. Kudryavtsev, Vladimir A. Yuryev

Abstract: Glass seed beads probably are the most numerous group of art historical glass. From the ancient times to the modern era, glass beads played an essential role in culture, as they were used, e.g., to decorate clothing, religious objects and functional tools, and served as an important good for global trade. The conservation state of items made of glass beads is an actual issue for curators and conse… ▽ More Glass seed beads probably are the most numerous group of art historical glass. From the ancient times to the modern era, glass beads played an essential role in culture, as they were used, e.g., to decorate clothing, religious objects and functional tools, and served as an important good for global trade. The conservation state of items made of glass beads is an actual issue for curators and conservators. Glass, as well known, is often unstable material, so a number of internal and external factors are responsible for chemical and physical processes in glass and on the glass surface. It was noticed that some types of historical 19th century glass beads are subjected to more intense destruction than others. The samples of glass beads of different colours and conservation states were examined by means of SEM-EDX, EBSD, Raman and FTIR microspectroscopy. Research showed that some types of beads are characterized by the presence of nano- and microcrystals in glass, which could be one of the causes of glass destruction. The elemental composition of crystals is different in each case and depends on raw materials and technical components used for glass manufacturing. The structure of crystals was identified by means of EBSD analysis. △ Less

Submitted 30 April, 2021; v1 submitted 28 April, 2021; originally announced April 2021.

Comments: Presented at Technart 2019: The European Conference on the Use of Analytical Techniques for Characterization of Artworks, Bruges, Belgium, 7 to 10 May 2019 [http://dx.doi.org/10.13140/RG.2.2.36144.61443]; 18 pages, 4 figures, 1 table

Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations

Authors: Mikhail S. Storozhevykh, Larisa V. Arapkina, Sergey M. Novikov, Valentyn S. Volkov, Aleksey V. Arsenin, Oleg V. Uvarov, Vladimir A. Yuryev

Abstract: Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy. The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4… ▽ More Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy. The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4 to 18 Å. The position and shape of both Ge and SiGe vibrational modes are of great interest since they are closely related to the strain and composition of the material that plays a role of active component in perspective optoelectronic devices based on such structures. In this work, we present an explanation for some peculiar features of Raman spectra, which makes it possible to control the quality of the grown heterostructures more effectively. A dramatic increase of intensity of both the Ge$-$Ge and Si$-$Ge bands for the structure containing Ge layers of 10 Å and anomalous shift and broadening of the Si$-$Ge band for structures comprising Ge layers of 8 and 9 Å thick were observed. In our model, the anomalous behavior of the Raman spectra with the change of thickness of deposited Ge is connected with the flatness of Ge layers as well as transitional SiGe domains formed via the stress-induced diffusion from {105} facets of quantum dots. The conclusions are supported by the STM studies and the numerical calculations. △ Less

Submitted 27 November, 2021; v1 submitted 3 April, 2021; originally announced April 2021.

Comments: 17 pages, 11 figures

Journal ref: Journal of Raman Spectroscopy 53(5), 853--862 (2022)

Diffusion processes in germanium and silicon films grown on Si$_3$N$_4$ substrates

Authors: Larisa V. Arapkina, Kirill V. Chizh, Dmitry B. Stavrovskii, Vladimir P. Dubkov, Elizabeth P. Lazareva, Vladimir A. Yuryev

Abstract: In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si$_3$N$_4$ dielectric substrates within a wide range of the Ge film growth temperatures (30 to 600°C) are presented. The intensity of the IR absorption bands related to the vibrations of the N$-$H and Si$-$N bonds are established to decrease with the increase of the Ge… ▽ More In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si$_3$N$_4$ dielectric substrates within a wide range of the Ge film growth temperatures (30 to 600°C) are presented. The intensity of the IR absorption bands related to the vibrations of the N$-$H and Si$-$N bonds are established to decrease with the increase of the Ge deposition temperature. It appears that this phenomenon cannot be explained only as a thermally activated process. Simultaneously, the peak corresponding to the Ge$-$N vibration bonds emerges in the X-ray photoelectron spectra. We suppose that the deposition of germanium layers on Si3N4 dielectric substrates containing hydrogen atoms causes the diffusion of hydrogen atoms from the dielectric layer into the growing film. The experimental results may be interpreted in terms of a model, according to which the migration of hydrogen atoms from the Si$_3$N$_4$ layer into the growing germanium film is due to the difference in chemical potentials of hydrogen atoms in the dielectric layer and the germanium film. This process initiates the diffusion of germanium atoms in the opposite direction, into the Si$_3$N$_4$ layer, where they connect to free bonds of nitrogen atoms arising due to the escape of hydrogen atoms. The analogous processes occur during the deposition of silicon layers on Si$_3$N$_4$ substrates. △ Less

Submitted 17 June, 2021; v1 submitted 18 December, 2020; originally announced December 2020.

Comments: 38 pages, 9 figures

Journal ref: Sol. Energy Mater. Sol. Cells 230 (2021) 111231

Identification of CaCuSi$_4$O$_{10}$ (Egyptian blue) in the "Birch. Spring" painting by Robert Falk (1907) using photoluminescence

Authors: Svetlana A. Pisareva, Irina N. Shibanova, Irina F. Kadikova, Ekaterina A. Morozova, Tatyana V. Yuryeva, Ilya B. Afanasyev, Vladimir A. Yuryev

Abstract: We have detected Egyptian blue pigment in the paint layer of the "Birch. Spring" painting by Robert Falk (1907); we have also found this pigment in the paints of the sketch drawn on the canvas back side. This is probably the first discovery of Egyptian blue in a 20th century work of art. We have analyzed a modern commercial Egyptian blue pigment (Kremer) and found it to be suitable as a standard… ▽ More We have detected Egyptian blue pigment in the paint layer of the "Birch. Spring" painting by Robert Falk (1907); we have also found this pigment in the paints of the sketch drawn on the canvas back side. This is probably the first discovery of Egyptian blue in a 20th century work of art. We have analyzed a modern commercial Egyptian blue pigment (Kremer) and found it to be suitable as a standard for photoluminescence spectral analysis. The characteristic photoluminescence band of CaCuSi$_4$O$_{10}$ reaches maximum at the wavelength of about 910 nm. The luminescence is efficiently excited by incoherent green or blue light. The study demonstrates that the photoluminescence spectral micro analysis using excitation by incoherent light can be efficiently used for the identification of luminescent pigments in paint layers of artworks. △ Less

Submitted 11 June, 2021; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 35 pages, 10 figures, 3 tables

Journal ref: Journal of Cultural Heritage 50 (2021) 126-138

Low-temperature formation of platinum silicides on polycrystalline silicon

Authors: Kirill V. Chizh, Vladimir P. Dubkov, Vyacheslav M. Senkov, Igor V. Pirshin, Larisa V. Arapkina, Sergey A. Mironov, Andrey S. Orekhov, Vladimir A. Yuryev

Abstract: Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperat… ▽ More Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt$_3$Si into Pt$_2$Si occurs as a result of the thermal treatment for 30 minutes in the temperature range from 125 to 300$^{\circ}$C. The Pt$_3$Si and Pt$_2$Si phases crystallize to PtSi due to annealing at the temperatures from 320 to 480$^{\circ}$C for the same time period. △ Less

Submitted 28 February, 2020; v1 submitted 25 February, 2020; originally announced February 2020.

Comments: 34 pages, 8 figures, 3 tables

Journal ref: Journal of Alloys and Compounds 843 (2020) 155908

The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy

Authors: Mikhail S. Storozhevykh, Larisa V. Arapkina, Sergey M. Novikov, Valentyn S. Volkov, Oleg V. Uvarov, Vladimir A. Yuryev

Abstract: The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found that the stresses do not spread in a thick Si layer above quantum dots, but completely relax via the formation of a thin boundary layer of mixed comp… ▽ More The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found that the stresses do not spread in a thick Si layer above quantum dots, but completely relax via the formation of a thin boundary layer of mixed composition. However, intermixing of Ge and Si is absent beneath the Ge layer in samples with a Ge coverage of 10 Å. Besides intermixing was not observed at all, both beneath and above the Ge layer, in samples with a Ge coverage of 6 Å or less. This may be due to the predominance of Ge diffusion into the Si matrix from the {105} facets of Ge huts, not from the Ge wetting layer, at low temperatures of the Ge/Si structure deposition. The critical thickness of Si coverage at which the intense stress-induced diffusion takes place is determined to lie in the range from 5 to 8 nm. △ Less

Submitted 9 February, 2020; v1 submitted 16 July, 2019; originally announced July 2019.

Comments: 18 pages, 9 figures; accepted to Semicond. Sci. Technol. (2020)

Journal ref: Semicond. Sci. Technol. 35, 045012 (2020)

Cathodoluminescence of CdZnSSe crystals synthesized in 19th century bead glass

Authors: Tatyana V. Yuryeva, Sergey A. Malykhin, Andrey A. Kudryavtsev, Ilya B. Afanasyev, Irina F. Kadikova, Vladimir A. Yuryev

Abstract: The article presents an experimental investigation of band-edge cathodoluminescence of CdZnSSe crystals that nucleated and grew in silicate glass melt during its production. We have studied Zn-rich red glass made for manufacture of seed beads in the 19th century and found it to contain CdZnSSe crystals. Due to colloidal staining using the CdZnSSe crystallites embedded in glass, glass makers were e… ▽ More The article presents an experimental investigation of band-edge cathodoluminescence of CdZnSSe crystals that nucleated and grew in silicate glass melt during its production. We have studied Zn-rich red glass made for manufacture of seed beads in the 19th century and found it to contain CdZnSSe crystals. Due to colloidal staining using the CdZnSSe crystallites embedded in glass, glass makers were enabled to produce lustrous red glass that, as we presently know, manifests bright luminescence. The CdZnSSe crystallites exhibit intense band-edge cathodoluminescence both at room temperature and at liquid nitrogen temperature. We have found the band-edge cathodoluminescence of these crystals to peak in the range from 2.00 to 2.03 eV at 300 K and from 2.02 to 2.06 eV at 80 K. We have also estimated the value of the band gap derivative d$E_g$/d$T$ in the interval from 80 to 300 K and found it to lie in the range from $-2.5 \times 10^{-4}$ to 0 eV/K. CdZnSSe crystals in glass demonstrate high temperature and temporal stability. The glass-crystal composite on their basis is resistant to the electron-beam irradiation and long-term weathering. Possible applications of this composite in modern technologies, and processes and components that might be used for making glass stained with CdZnSSe in the past are also discussed. △ Less

Submitted 29 November, 2019; v1 submitted 30 January, 2019; originally announced January 2019.

Comments: 7 figures, 1 table

Journal ref: Materials Research Bulletin 123, 110704 (2020)

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Authors: Kirill V. Chizh, Larisa V. Arapkina, Dmitry B. Stavrovsky, Peter I. Gaiduk, Vladimir A. Yuryev

Abstract: In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied in detail. Diffusion of hydrogen atoms from a dielectric layer into the growing film is shown to accompany the growth of a silicon film on a Si$_3$N… ▽ More In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied in detail. Diffusion of hydrogen atoms from a dielectric layer into the growing film is shown to accompany the growth of a silicon film on a Si$_3$N$_4$ layer deposited by CVD or on a SiO$_2$ layer obtained by thermal oxidation of a silicon wafer. The process of hydrogen migration from the dielectric substrates into the silicon film is studied using FTIR spectroscopy. The reduction of IR absorption at the bands related to the N$-$H bonds vibrations and the increase of IR absorption at the bands relating to the Si$-$N bonds vibrations in IR spectra demonstrate that hydrogen atoms leave Si$_3$N$_4$ layer during Si deposition from a molecular beam. The absorption band assigned to the valence vibrations of the Si$-$H bond at $\sim 2100$ cm$^{-1}$ emerging in IR spectra obtained at samples deposited both on Si$_3$N$_4$ and SiO$_2$ layers indicates the accumulation of hydrogen atoms in silicon films. The difference in chemical potentials of hydrogen atoms in the dielectric layer and the silicon film explains the transfer of hydrogen atoms from the Si$_3$N$_4$ or SiO$_2$ layer into the growing silicon film. △ Less

Submitted 19 April, 2019; v1 submitted 30 January, 2019; originally announced January 2019.

Comments: 4 figures

Journal ref: Materials Science in Semiconductor Processing 99 (2019) 78-84

Study of deteriorating semiopaque turquoise lead-potassium glass beads at different stages of corrosion using micro-FTIR spectroscopy

Authors: Irina F. Kadikova, Ekaterina A. Morozova, Tatyana V. Yuryeva, Irina A. Grigorieva, Vladimir A. Yuryev

Abstract: Nowadays, a problem of historical beadworks conservation in museum collections is actual more than ever because of fatal corrosion of the 19th century glass beads. Vibrational spectroscopy is a powerful method for investigation of glass, namely, of correlation of the structure-chemical composition. Therefore, Fourier-transform infrared spectroscopy was used for examination of degradation processes… ▽ More Nowadays, a problem of historical beadworks conservation in museum collections is actual more than ever because of fatal corrosion of the 19th century glass beads. Vibrational spectroscopy is a powerful method for investigation of glass, namely, of correlation of the structure-chemical composition. Therefore, Fourier-transform infrared spectroscopy was used for examination of degradation processes in cloudy turquoise glass beads, which in contrast to other color ones deteriorate especially strongly. Micro-X-ray fluorescence spectrometry of samples has shown that lead-potassium glass PbO-K$_2$O-SiO$_2$ with small amount of Cu and Sb was used for manufacture of cloudy turquoise beads. Fourier-transform infrared spectroscopy study of the beads at different stages of glass corrosion was carried out in the range from 200 to 4000 cm$^{-1}$ in the attenuated total reflection mode. In all the spectra, we have observed shifts of two major absorption bands to low-frequency range (~1000 and ~775 cm$^{-1}$) compared to ones typical for amorphous SiO2 (~1100 and 800 cm$^{-1}$, respectively). Such an effect is connected with Pb$^{2+}$ and K$^+$ appending to the glass network. The presence of a weak band at ~1630 cm$^{-1}$ in all the spectra is attributed to the adsorption of H$_2$O. After annealing of the beads, the band disappeared completely in less deteriorated samples and became significantly weaker in more destroyed ones. Based on that we conclude that there is adsorbed molecular water on the beads. However, products of corrosion (e.g., alkali in the form of white crystals or droplets of liquid alkali) were not observed on the glass surface. We have also observed glass depolymerisation in the strongly degraded beads, which is exhibited in domination of the band peaked at ~1000 cm$^{-1}$. △ Less

Submitted 8 May, 2019; v1 submitted 23 May, 2017; originally announced May 2017.

Comments: 18 pages, 5 figures

Journal ref: Mater. Res. Express 7, 025203 (2020)

Crystallites in Color Glass Beads of the 19th Century and Their Influence on Fatal Deterioration of Glass

Authors: E. A. Morozova, I. F. Kadikova, T. V. Yuryeva, V. A. Yuryev

Abstract: Glass corrosion is a crucial problem in kee** and conservation of beadworks in museums. All kinds of glass beads undergo deterioration but blue-green lead-potassium glass beads of the 19th century are subjected to the destruction to the greatest extent. Blue-green lead-potassium glass beads of the 19th century obtained from exhibits kept in Russian museums were studied with the purpose to determ… ▽ More Glass corrosion is a crucial problem in kee** and conservation of beadworks in museums. All kinds of glass beads undergo deterioration but blue-green lead-potassium glass beads of the 19th century are subjected to the destruction to the greatest extent. Blue-green lead-potassium glass beads of the 19th century obtained from exhibits kept in Russian museums were studied with the purpose to determine the causes of the observed phenomenon. For the comparison, yellow lead beads of the 19th century were also explored. Both kinds of beads contain Sb but yellow ones are stable. Using scanning electron microscopy, energy dispersive X-ray microspectrometry, electron backscatter diffraction, transmission electron microscopy and X-ray powder analysis, we have registered the presence of crystallites of orthorhombic KSbOSiO$_4$ and cubic Pb$_2$Sb$_{1.5}$Fe$_{0.5}$O$_{6.5}$ in glass matrix of blue-green and yellow beads, respectively. Both compounds form at rather high temperatures obviously during glass melting and/or melt cooling. We suppose that the crystallites generate internal tensile strain in glass during its cooling which causes formation of multiple microcracks in inner domains of blue-green beads. We suggest that the deterioration degree depends on quantity of the precipitates, their sizes and their temperature coefficients of linear expansion. In blue-green beads, the crystallites are distributed in their sizes from $\sim\,$200 nm to several tens of $μ$m and tend to gather in large colonies. The sizes of crystallites in yellow beads are several hundreds of nm and their clusters contain few crystallites. This explains the difference in corrosion of these kinds of beads containing crystals of Sb compounds. △ Less

Submitted 23 May, 2017; originally announced May 2017.

Comments: Advances in Applied Physics and Materials Science Congress & Exhibition, April 22 to 26, 2017, Oludeniz, Fethiye, Mugla, Turkey

KSbOSiO$_4$ microcrystallites as a source of corrosion of blue-green lead-potassium glass beads of the 19th century

Authors: T. V. Yuryeva, I. B. Afanasyev, E. A. Morozova, I. F. Kadikova, V. S. Popov, V. A. Yuryev

Abstract: Presently, deterioration of glass beads is a significant problem in conservation and restoration of beaded exhibits in museums. Glass corrosion affects nearly all kinds of beads but cloudy blue-green ones are more than others subjected to disastrous destruction. However, physical and chemical mechanisms of this phenomenon have not been understood thus far. This article presents results of a study… ▽ More Presently, deterioration of glass beads is a significant problem in conservation and restoration of beaded exhibits in museums. Glass corrosion affects nearly all kinds of beads but cloudy blue-green ones are more than others subjected to disastrous destruction. However, physical and chemical mechanisms of this phenomenon have not been understood thus far. This article presents results of a study of elemental and phase composition of glass of the blue-green beads of the 19th century obtained from exhibits kept in Russian museums. Using scanning electron microscopy, X-ray microanalysis and X-ray powder analysis we have detected and investigated Sb-rich microinclusions in the glass matrix of these beads and found them to be micro crystallites of KSbSiO$_5$. These crystallites were not detected in other kinds of beads which are much less subjected to corrosion than the blue-green ones and deteriorate in a different way. We belive that individual precipitates of KSbSiO$_5$ and especially their clusters play a major role in the blue-green bead deterioration giving rise to slow internal corrosion of the bead glass. △ Less

Submitted 30 December, 2016; v1 submitted 7 September, 2016; originally announced September 2016.

Comments: A version accepted to the Journal of Applied Physics. The title has been changed. The previous title (1609.02101v1) was "A study of deterioration and destruction of historic blue-green glass beads of the 19th century: identification of microcrystallites in the glass matrix". Corrected typos

Journal ref: J. Appl. Phys. 121, 014902 (2017)

Room-temperature formation of Pt$_3$Si/Pt$_2$Si films on poly-Si substrates

Authors: V. P. Dubkov, S. A. Mironov, K. V. Chizh, V. A. Yuryev

Abstract: We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt an… ▽ More We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt and poly-Si films as a result of Pt magnetron sputtering at room temperature. This layer likely appears due to high enough temperature of Pt ions in the magnetron plasma sufficient for chemical reaction of the silicide film formation on the Si surface. The Pt$_3$Si layer likely forms from the Pt--Pt$_3$Si layer (Pt$_{95}$Si$_5$), which arises under Pt film during the magnetron sputtering, as a result of Pt removal by wet etching. △ Less

Submitted 18 July, 2016; originally announced July 2016.

Comments: 3 pages, 3 figures

Journal ref: Journal of Physics: Conference Series 816(1), 012011 (2017)

Ge clusters and wetting layers forming from granular films on the Si(001) surface

Authors: M. S. Storozhevykh, L. V. Arapkina, V. A. Yuryev

Abstract: The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at 600C in conditions of a closed system, the Ge granular film transforms to the usual wetting layer and Ge clusters with multimodal size distribution and the Ge ova… ▽ More The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at 600C in conditions of a closed system, the Ge granular film transforms to the usual wetting layer and Ge clusters with multimodal size distribution and the Ge oval drops having the highest number density. After the long-term thermal treatment of the Ge film at the same temperature, Ge drops disappear; the large clusters increase their sizes at the expense of the smaller ones. The total density of Ge clusters on the surface drastically decreases. The wetting layer mixed c(4 x 2) + p(2 x 2) reconstruction transforms to the single c(4 x 2) one which is likely thermodynamically favoured. Pyramids or domes are not observed on the surface after any annealing. △ Less

Submitted 3 December, 2015; originally announced December 2015.

Comments: A paper presented at the 17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, 23-27 November 2015, St. Petersburg, Russia

Journal ref: J. Phys.: Conf. Ser. 690, 012013 (2016)

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Authors: V. A. Yuryev, K. V. Chizh, V. A. Chapnin, S. A. Mironov, V. P. Dubkov, O. V. Uvarov, V. P. Kalinushkin, V. M. Senkov, O. Y. Nalivaiko, A. G. Novikau, P. I. Gaiduk

Abstract: Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. L… ▽ More Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about $-$2%/$^{\circ}$C in the temperature interval from 25 to 50$^{\circ}$C. △ Less

Submitted 13 May, 2015; v1 submitted 19 March, 2015; originally announced March 2015.

Comments: 10 pages, 11 figures, 2 tables; version accepted for publication in J. Appl. Phys

Journal ref: J. Appl. Phys. 117, 204502 (2015)

Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

Authors: Mikhail S. Storozhevykh, Larisa V. Arapkina, Vladimir A. Yuryev

Abstract: The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in… ▽ More The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure. △ Less

Submitted 9 July, 2015; v1 submitted 18 September, 2014; originally announced September 2014.

Comments: Accepted for publication in Nanoscale Research Letters

Journal ref: Nanoscale Research Letters 10, 295 (2015)

Recurrent algorithms for detection of stochastic signals in the state space

Authors: Arthur N. Yuryev, prepared for publication by V. A. Yuryev

Abstract: The paper is devoted to synthesis of recurrent algorithms for detection of stochastic signals given in state space. The structure of the algorithms synthesized is shown to be close to that of the Kalman filter. Analysis of one of the algorithms synthesized is carried out. Illustration of connection between weight coefficients of processing system, which are formed in implicit form, is given. Dynam… ▽ More The paper is devoted to synthesis of recurrent algorithms for detection of stochastic signals given in state space. The structure of the algorithms synthesized is shown to be close to that of the Kalman filter. Analysis of one of the algorithms synthesized is carried out. Illustration of connection between weight coefficients of processing system, which are formed in implicit form, is given. Dynamics of amplification and feedback coefficients of the system is studied; calculation of its detection characteristics is fulfilled. Synthesis of the filters is also carried out for the continuous time. The algorithms synthesized are extended to the case of a mixture of stochastic correlated interferences and white noise. Modification of one of the algorithms is made which enables its use for solving problems of multialternative detection. △ Less

Submitted 20 February, 2014; originally announced February 2014.

Comments: Prepared for publication in English by V. A. Yuryev in 1991; 58 pages. 9 figures. Arthur N. Yuryev (1932/07/05-1990/09/30); Y. A. Furman, A. N. Yuryev and V. V. Yanshin, Numerical methods of binary image processing and recognition. Krasnoyarsk University, Krasnoyarsk, Russia, 1992, Chapter 2; ISBN 5-7470-0204-X

On the Spatial Ambiguity Function

Authors: Arthur N. Yuryev, prepared for publication by V. A. Yuryev

Abstract: The ambiguity function of a spatial signal in the "signal spatial frequency displacement vs antenna linear displacement" coordinates is considered in this paper; in case of a monochromatic signal with known carrier frequency, spatial signal vector angular displacement is considered as the second coordinate. The analysis is made taking into account an external (reradiated or thermal) background whi… ▽ More The ambiguity function of a spatial signal in the "signal spatial frequency displacement vs antenna linear displacement" coordinates is considered in this paper; in case of a monochromatic signal with known carrier frequency, spatial signal vector angular displacement is considered as the second coordinate. The analysis is made taking into account an external (reradiated or thermal) background which contributes considerable peculiarities in the properties of the spatial ambiguity function. Accuracy of measuring the signal linear or angular displacement and resolution are determined. Examples for the Fresnel and Fraunhofer zones are given. △ Less

Submitted 13 February, 2014; originally announced February 2014.

Comments: Prepared for publication by V. A. Yuryev in 1991; 26 pages, 4 figures, 1 table. Arthur N. Yuryev (1932/07/05--1990/09/30)

Journal ref: Radiotekhnika (Telecommunications and Radio Engineering, ISSN 0033-8486), issue 10 (October 1994), p. 76--82; received after revision on December 11, 1991

Degradation and destruction of historical blue-green glass beads: A study by microspectroscopy of light transmission

Authors: Tatyana V. Yuryeva, Vladimir A. Yuryev

Abstract: Blue-green historical beads are sometimes referred to as instable ones because of their degradability. At present, the cause of the phenomenon of deterioration of the blue-green beads is unknown. We explore internal microstucture of degrading blue-green historical beads and its evolution in the process of bead deterioration. Investigating transmittance and scattering spectra of visible and near in… ▽ More Blue-green historical beads are sometimes referred to as instable ones because of their degradability. At present, the cause of the phenomenon of deterioration of the blue-green beads is unknown. We explore internal microstucture of degrading blue-green historical beads and its evolution in the process of bead deterioration. Investigating transmittance and scattering spectra of visible and near infrared light we observe formation of microscopic internal inhomogeneities with the sizes less than 150 nm in the glass bulk and growth of their density with increase in degree of bead degradation. By means of laser scanning microscopy we also observe numerous microinclusions and microcracks on the cleavage surface of a partially degraded bead. We discuss possible physical factors resulting in destruction of the blue-green beads. △ Less

Submitted 15 March, 2014; v1 submitted 14 January, 2014; originally announced January 2014.

Comments: 11 pages, 6 figures; accepted to J. Opt

Journal ref: J. Opt. 16 (2014) 055704

Application of Scanning Mid-IR-Laser Microscopy for Characterization of Semiconductor Materials for Photovoltaics

Authors: V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev

Abstract: The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ Si$_x$Ge$_{1-x}$---a promising material for photovoltaics---and multicrystalline silicon for solar cells. The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ Si$_x$Ge$_{1-x}$---a promising material for photovoltaics---and multicrystalline silicon for solar cells. △ Less

Submitted 24 October, 2013; originally announced October 2013.

Comments: 2 pages, 3 figures. arXiv admin note: text overlap with arXiv:1008.4050

Report number: 22-C-3-1

Journal ref: 11th International Photovoltaic Science and Engineering Conference, At Hokkaido, Japan, Tokyo Univ. of Agriculture and Technology, Tokyo, Japan, 1999, p. 283-284

Investigation of quantum-dimensional structure parameters by X-ray optical, scanning tunneling and transmission electron microscopy

Authors: A. G. Touryanski, V. M. Senkov, S. S. Gizha, L. V. Arapkina, V. A. Chapnin, K. V. Chizh, V. P. Kalinushkin, M. S. Storozhevykh, O. V. Uvarov, V. A. Yuryev

Abstract: Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented △ Less

Submitted 3 April, 2013; originally announced April 2013.

Comments: 21st Int. Symp. "Nanostructures: Physics and Technology"; Saint Petersburg, Russia, June 24-28, 2013

Journal ref: Proc. 21th Int. Symp. "Nanostructures: Physics and Technology", Saint Petersburg, Russia, June 24-28, 2013; Academic University Publishing, St. Petersburg, Russia, 2013, pp. 166-167

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

Authors: K. V. Chizh, V. A. Chapnin, V. P. Kalinushkin, V. Ya. Resnik, M. S. Storozhevykh, V. A. Yuryev

Abstract: Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as multi-phase compound comp… ▽ More Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as multi-phase compound composed by 20 to 40% of Ni3Si, 30 to 60% of Ni2Si and 10 to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from ~100 to ~20 for the temperature increasing from 22 to 70C; they exceed 1000 at 80K. A barrier of ~0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-emf spectra at 80K and attributed to the Ni-silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3 to 0.6%/K for forward biasing and around 2.5%/K for reverse biasing of the diodes. △ Less

Submitted 27 February, 2013; v1 submitted 29 January, 2013; originally announced January 2013.

Comments: 18 pages, 7 figures

Journal ref: Nanoscale Research Letters 2013, 8:177 (URL: http://www.nanoscalereslett.com/content/8/1/177)

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

Authors: Larisa V. Arapkina, Vladimir A. Yuryev

Abstract: Structural models of growing Ge hut clusters---pyramids and wedges---are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from t… ▽ More Structural models of growing Ge hut clusters---pyramids and wedges---are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth terrace. We suppose that only symmetrical configurations of pyramids composed by 2, 6, 10, 14, etc. monolayers over the wetting layer are stable. This might explain less stability of pyramids in comparison with wedges in dense arrays obtained at low Ge deposition temperatures. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented for both species of huts. It is concluded from precise STM measurements that top layers of WL patches are relaxed when huts nucleate on them. △ Less

Submitted 19 March, 2013; v1 submitted 10 October, 2012; originally announced October 2012.

Comments: 20 pages, 9 figures

Journal ref: J. Appl. Phys. 114, 104304 (2013)

Calculation of thermal parameters of SiGe microbolometers

Authors: A. V. Voitsekhovskii, D. V. Grigoryev, V. A. Yuryev, S. N. Nesmelov

Abstract: The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal con… ▽ More The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10$^-3$ cm$^2$K/W at the SiGe interface. △ Less

Submitted 30 August, 2012; originally announced August 2012.

Comments: 11 pages, 6 figures

Journal ref: Russian Physics Journal, Vol. 50, No. 12, 2007, p. 1218

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Authors: V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh, V. A. Chapnin, K. V. Chizh, O. V. Uvarov, V. P. Kalinushkin, E. S. Zhukova, A. S. Prokhorov, I. E. Spektor, B. P. Gorshunov

Abstract: Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quant… ▽ More Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 mcm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies 0.3-1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity decreases. We discuss possible mechanisms that can be responsible for the observed effects. △ Less

Submitted 12 April, 2012; v1 submitted 11 April, 2012; originally announced April 2012.

Comments: EMNC-2012, Orlando, FL, USA

Journal ref: Nanoscale Research Letters 2012, 7:414

STM investigation of structural properties of Si layers deposited on Si(001) vicinal surfaces

Authors: L. V. Arapkina, V. A. Chapnin, K. V. Chizh, L. A. Krylova, V. A. Yuryev

Abstract: This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt direction of a Si(001) wafer and epilayer growth mode. We suppose these effects to be connected with mutual interaction of monoatomic steps. This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt direction of a Si(001) wafer and epilayer growth mode. We suppose these effects to be connected with mutual interaction of monoatomic steps. △ Less

Submitted 5 April, 2012; originally announced April 2012.

Comments: International Symposium on Nanostructures; http://www.ioffe.ru/NANO2012/

Journal ref: Proc. 20th Int. Symp. "Nanostructures: Physics and Technology", Nizhni Novgorod, Russia, June 24-30, 2012 (2012) pp. 119-120

Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

Authors: V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh, V. A. Chapnin, K. V. Chizh, O. V. Uvarov, V. P. Kalinushkin, E. S. Zhukova, A. S. Prokhorov, I. E. Spektor, B. P. Gorshunov

Abstract: Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures… ▽ More Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported. △ Less

Submitted 26 March, 2012; originally announced March 2012.

Comments: Nanostructures: physics and technology http://http://www.ioffe.ru/NANO2012/

Journal ref: Proc. 20th Int. Symp. "Nanostructures: Physics and Technology", Nizhni Novgorod, Russia, June 24-30, 2012; Academic University Publishing, St. Petersburg, Russia, 2012, pp. 209-210

Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM

Authors: L. V. Arapkina, L. A. Krylova, K. V. Chizh, V. A. Chapnin, O. V. Uvarov, V. A. Yuryev

Abstract: Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated. To decrease the cleaning temperature, a silicon surface was hydrogenated in the process of a preliminary chemical treatment in HF and NH_4F aqueous solutions. It has been shown that smooth surfaces… ▽ More Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated. To decrease the cleaning temperature, a silicon surface was hydrogenated in the process of a preliminary chemical treatment in HF and NH_4F aqueous solutions. It has been shown that smooth surfaces composed by wide terraces separated by monoatomic steps can be obtained by dehydrogenation at the temperatures > 600C, whereas clean surfaces obtained at the temperatures < 600C are rough. It has been found that there exists a dependence of structural properties of clean surfaces on the temperature of hydrogen thermal desorption and the process of the preliminary chemical treatment. The frequency of detachment/attachment of Si dimers from/to the steps and effect of the Ehrlich-Schwoebel barrier on ad-dimer migration across steps have been found to be the most probable factors determining a degree of the resultant surface roughness. △ Less

Submitted 8 June, 2012; v1 submitted 28 February, 2012; originally announced February 2012.

Comments: 8 pages, 8 figures; version accepted to J. Appl. Phys

Journal ref: J. Appl. Phys. 112, 014311 (2012)

Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics

Authors: V. P. Kalinushkin, V. A. Yuryev, O. V. Astafiev, A. N. Buzynin, N. I. Bletskan

Abstract: Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and qua… ▽ More Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics △ Less

Submitted 7 June, 2011; originally announced June 2011.

Comments: MRS Spring Meeting, San Francisco, USA, 17-21 April 1995

Journal ref: MRS Symp. Proc., 378 (1995) 615-620

Large-scale defect accumulations in Czochralski-grown silicon

Authors: V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev, O. V. Astafiev

Abstract: Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impur… ▽ More Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated. △ Less

Submitted 6 June, 2011; originally announced June 2011.

Comments: Silicon'96, 5-th Scientific and Business Conf., Roznov pod Rad-hostem, Czech Republic, 5-8 November 1996

Journal ref: Silicon'96, Proc. 5-th Scientific and Business Conf., Roznov pod Radhostem, Czech Republic, 5-8 November 1996, ed. K. Vojtechovsky, Tecon Scientific, Roznov pod Radhostem, Czech Republic, 1996, vol. 1, p. 304, vol. 2, p. 96-104

Application of elastic mid-IR light scattering for inspection of internal gettering operations

Authors: O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin, V. A. Yuryev

Abstract: Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), whi… ▽ More Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), which has been successfully applied thus far for the investigation of large-scale electrically active defect accumulations (LSDAs) in semiconductor crystals. △ Less

Submitted 6 June, 2011; originally announced June 2011.

Comments: Silicon'96, Roznov pod Radhostem, Czech Republic, 5-8 November 1996

Journal ref: Silicon'96, Proc. 5-th Scientific and Business Conf. 5-8 November 1996, vol. 1, p. 305, vol. 2, p. 88-95

Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors

Authors: O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev

Abstract: This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for investigation of large-scale recombination-active defects in near-surface and near-interface regions of semiconductor wafers. However, it can be easily modified for the… ▽ More This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for investigation of large-scale recombination-active defects in near-surface and near-interface regions of semiconductor wafers. However, it can be easily modified for the defect investigations in the crystal bulk. Being in many respects analogous to EBIC, the present technique has some indisputable advantages, which enable its application for both non-destructive laboratory investigations and quality monitoring in the industry. △ Less

Submitted 3 June, 2011; originally announced June 2011.

Comments: DRIP-VI, 1995

Journal ref: Inst. Phys. Conf. Ser. No. 149 (1996) 361-366

Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Authors: V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats, Yu. A. Repeyev, V. G. Fedoseyev

Abstract: The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption resonances (so-called "bulk" photoexcitation). Only the excitonic and band-edge luminescence is seen under the interband excitation, while under the "bulk"… ▽ More The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption resonances (so-called "bulk" photoexcitation). Only the excitonic and band-edge luminescence is seen under the interband excitation, while under the "bulk" excitation, the spectra are much more informative. The interband excited spectra of all the samples investigated in the present work are practically identical, whereas the bulk excited PL spectra are different for different samples and excitation depths and provide the information on the deep-level point defect composition of the bulk materials. △ Less

Submitted 3 June, 2011; originally announced June 2011.

Comments: DRIP-VI, 1995

Journal ref: Inst. Phys. Conf. Ser. No. 149 (1996) 263-268

Influence of Photoexcitation Depth on Luminescence Spectra of Bulk GaAs Single Crystals and Defect Structure Characterization

Authors: V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats, Yu. A. Repeyev, V. G. Fedoseyev

Abstract: The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption resonances (so-called bulk photoexcitation). Only the excitonic and band-edge luminescence is seen under the interband excitation, while under the bulk exc… ▽ More The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption resonances (so-called bulk photoexcitation). Only the excitonic and band-edge luminescence is seen under the interband excitation, while under the bulk excitation, the spectra are much more informative. The interband excited spectra of all the samples investigated in the present work are practically identical, whereas the bulk excited PL spectra are different for different samples and excitation depths and provide the information on the deep-level point defect composition of the bulk materials. △ Less

Submitted 3 June, 2011; originally announced June 2011.

Comments: Aalborg Summer School on Nonlinear Optics, Aalborg, Denmark, 7-12 August 1995

Journal ref: Notions and Perspectives of Nonlinear Optics, ed. Ole Keller, World Scientific, Singapore, 1996, p. 665-670

Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

Authors: O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev

Abstract: A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor… ▽ More A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples △ Less

Submitted 3 June, 2011; originally announced June 2011.

Comments: 9-th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, UK, 20-23 March 1995

Journal ref: Inst. Phys. Conf. Ser. No. 146 (1995) 775-780

Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer

Authors: V. A. Yuryev, L. V. Arapkina

Abstract: Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of {105}-faceted clusters on the Ge wetting layer have been observed at high temperatures: Pyramids have been observed to nucleate via the previously described formatio… ▽ More Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of {105}-faceted clusters on the Ge wetting layer have been observed at high temperatures: Pyramids have been observed to nucleate via the previously described formation of strictly determined structures, resembling blossoms, composed by 16 dimers grouped in pairs and chains of 4 dimes on tops of the wetting layer M x N patches, each on top of a separate single patch, just like it goes on at low temperatures; an alternative process consists in faceting of shapeless heaps of excess Ge atoms which arise in the vicinity of strong sinks of adatoms, such as pits or steps. The latter process has never been observed at low temperatures; it is typical only for the high-temperature deposition mode. △ Less

Submitted 27 January, 2012; v1 submitted 30 May, 2011; originally announced May 2011.

Comments: 13 pages, 4 figures; a revised version

Journal ref: J. Appl. Phys. 111, 094307 (2012)

Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility

Authors: Vladimir A. Yuryev, Larisa V. Arapkina

Abstract: Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C) and high (>600 deg. C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts---pyramid… ▽ More Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C) and high (>600 deg. C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts---pyramids and wedges---are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature. △ Less

Submitted 14 April, 2011; originally announced April 2011.

Comments: 30 pages, 11 figures

Journal ref: Nanoscale Research Letters 2011, 6:522

An initial phase of Ge hut array formation at low temperature on Si(001)

Authors: Larisa V. Arapkina, Vladimir A. Yuryev

Abstract: We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 Å (~3.6 ML). Further development of hut arrays consists in simultaneous growth of the formerly appeared clusters and nucleation of new on… ▽ More We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 Å (~3.6 ML). Further development of hut arrays consists in simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructing the patch surface from the usual c(4x2) or p(2x2) structure to one of two recently described formations composed by epitaxially oriented Ge dimer pairs and chains of four dimers. △ Less

Submitted 16 May, 2011; v1 submitted 7 February, 2011; originally announced February 2011.

Comments: Extended discussion; to appear in J. Appl. Phys., 2011

Journal ref: J. Appl. Phys. 109, 104319 (2011)

Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots

Authors: E. S. Zhukova, B. P. Gorshunov, V. A. Yuryev, L. V. Arapkina, K. V. Chizh, V. A. Chapnin, V. P. Kalinushkin, A. S. Prokhorov, G. N. Mikhailova

Abstract: The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due… ▽ More The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed. △ Less

Submitted 18 February, 2011; v1 submitted 18 January, 2011; originally announced January 2011.

Comments: 9 pages, 4 figures; typos corrected

Journal ref: JETP Letters, 2010, Vol. 92, No. 12, pp. 793-798

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Authors: I. V. Kucherenko, V. S. Vinogradov, N. N. Mel'nik, L. V. Arapkina, V. A. Chapnin, K. V. Chizh, V. A. Yuryev

Abstract: The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band $Λ_3$ and the conducti… ▽ More The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band $Λ_3$ and the conduction band $Λ_1$ (the E1 and E1 + $Δ_1$ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of 10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E1 and E1 + $Δ_1$ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^-1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer, for which the size dispersion of quantum dots is minimum, is determined. △ Less

Submitted 10 October, 2010; originally announced October 2010.

Comments: 14 pages, 9 figures

Journal ref: Physics of the Solid State, 2008, Vol. 50, No. 10, pp. 1970-1977; Fizika Tverdogo Tela, 2008, Vol. 50, No. 10, pp. 1888-1894

Cathodoluminescence and Selective Emission of Er3+ in Oxides

Authors: V. M. Marchenko, M. G. Voitik, V. A. Yuryev

Abstract: The dependence of the Er3+ cathodoluminescence and selective emission on the power of the YAG:Er3+ and Er2O3 excitation by an electron beam is spectroscopically studied for applications in high-intensity radiation sources of the visible and near-IR spectral ranges. The dependence of the Er3+ cathodoluminescence and selective emission on the power of the YAG:Er3+ and Er2O3 excitation by an electron beam is spectroscopically studied for applications in high-intensity radiation sources of the visible and near-IR spectral ranges. △ Less

Submitted 7 October, 2010; originally announced October 2010.

Comments: 5 pages, 3 figures

Journal ref: Laser Physics, 2008, Vol. 18, No. 6, pp. 756-761

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED

Authors: L. V. Arapkina, V. A. Yuryev, K. V. Chizh, V. M. Shevlyuga, M. S. Storojevyh, L. A. Krylova

Abstract: Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal of SiO2 or a different protective coat prior to MBE. Chemical pre-cleaning usually results in formation of the thin SiO2 film or the surface passivated by H. Depending on chemical pretreatment different purification pro… ▽ More Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal of SiO2 or a different protective coat prior to MBE. Chemical pre-cleaning usually results in formation of the thin SiO2 film or the surface passivated by H. Depending on chemical pretreatment different purification processes are applied to prepare the clean surface in UHV. A structure of the Si(001) surface which may affect MBE was studied by STM and RHEED. Experiments were carried out in UHV using the Riber SSC2 instrument coupled with GPI-300 STM. Si wafers were either etched beforehand in the solutions of RCA or HF and HNO3 mixture or passivated in the HF solutions. The (2x1) reconstruction was found to mainly arise in UHV after deoxidization processes such as high-temperature annealing or SiO2 removal by a weak flux of Si. The c(8x8) structure was also often observed by STM at room temperature and found to occupy whole surface or a part of it depending on sample cooling rate and chemical pretreatment. The c(8x8) structure observed by STM was evidenced to correspond to (4x4) one in the RHEED patterns; the later replaced (2x1) when the samples were cooled below 600C and turned out to be reversible with the transition point of ~600C. A structural model of the c(8x8) surface and a pathway of its formation in assumption of surface stress field self ordering are proposed. △ Less

Submitted 18 January, 2011; v1 submitted 20 September, 2010; originally announced September 2010.

Comments: A lecture at E-MRS 2010 Fall Meeting; Nanoscale Research Letters, 2011; http://www.nanoscalereslett.com/content/6/1/218

Journal ref: Nanoscale Research Letters 2011, 6:218

CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth

Authors: L. V. Arapkina, V. A. Yuryev

Abstract: We report a direct observation of Ge hut nucleation on Si(001) during UHV MBE. The study was carried out using a UHV instrument coupling MBE chamber and STM which enables the sample study on atomic level at any stage of treatment. Si wafers were deoxidized by annealing at 925C. Ge was deposited by electron beam evaporation; the coverage was varied from 3 to 14 Å; the wafer temperature was 360C. Th… ▽ More We report a direct observation of Ge hut nucleation on Si(001) during UHV MBE. The study was carried out using a UHV instrument coupling MBE chamber and STM which enables the sample study on atomic level at any stage of treatment. Si wafers were deoxidized by annealing at 925C. Ge was deposited by electron beam evaporation; the coverage was varied from 3 to 14 Å; the wafer temperature was 360C. The nuclei of pyramids and wedges were observed on the (MxN) wetting layer (WL) patches and found to have different structures. The atomic models of nuclei of both hut species have been built as well as the models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of the wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. The pyramid grows without phase transitions. The structure of its vertex copies the nucleus. Transitions between hut species are impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet turned out to follow the PD model. Further growth of hut arrays results in domination of wedges, the density of pyramids exponentially drops. The heights of wedges are limited; no limitation of pyramid heights is observed. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL. △ Less

Submitted 14 January, 2011; v1 submitted 20 September, 2010; originally announced September 2010.

Comments: A lecture at E-MRS 2010 Fall Meeting; Nanoscale Research Letters, 2011; http://www.nanoscalereslett.com/content/6/1/345

Journal ref: Nanoscale Research Letters 2011, 6:345

On the nature of large-scale defect accumulations in Czochralski-grown silicon

Authors: V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev, O. V. Astafiev, D. I. Murin

Abstract: Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of th… ▽ More Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of the large-scale impurity accumulations in CZ Si:B is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si:B is also proposed. △ Less

Submitted 30 August, 2010; v1 submitted 27 August, 2010; originally announced August 2010.

Comments: DRIP-VI; unlikely to be available elsewhere

Journal ref: Inst. Phys. Conf. Ser. No. 149 (1996) 219-224

Possibilities of application of elastic mid-IR light scattering for inspection of internal gettering operations

Authors: O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin, D. I. Murin, V. A. Yuryev

Abstract: A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A classifcation of scattering inhomogeneities in initial crystals and crystals subjected to the getting process is presented. A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A classifcation of scattering inhomogeneities in initial crystals and crystals subjected to the getting process is presented. △ Less

Submitted 30 August, 2010; v1 submitted 26 August, 2010; originally announced August 2010.

Comments: DRIP-VI; unlikely to be available elsewhere

Journal ref: Inst. Phys. Conf. Ser. No. 149 (1996) 343-348

Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaics

Authors: O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev

Abstract: A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of investigations on low-angle mid-IR-l… ▽ More A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of investigations on low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope together with the local photoexcitation of excess carriers within a small domain in a studied sample, thus forming an artificial source of scattering of the probe IR light for the recombination contrast imaging of defects. The current paper presents three contrasting examples of application of the above technique for defect visualization in silicon-based materials designed for photovoltaics and photonics which demonstrate that this technique might be an efficient tool for both defect investigation and industrial testing of semiconducting materials. △ Less

Submitted 24 August, 2010; originally announced August 2010.

Comments: DRIP-8

Journal ref: Journal of Crystal Growth 210 (2000) 361-365

Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics

Authors: V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev

Abstract: The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-… ▽ More The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-induced defects as well as such huge defects as "pin holes". Besides, previously unexplained "anomalous" (cubic power) dependence of signal of the scanning mid-IR-laser microscope in the optical-beam-induced light scattering mode on the photoexcitation power obtained for mechanically polished samples has now been attributed to the excess carrier scattering on charged linear defects, likely dislocation lines. The conclusion is made in the article that the scanning mid-IR-laser microscopy may serve as very effective tool for defect investigations in materials for modern photovoltaics. △ Less

Submitted 24 August, 2010; originally announced August 2010.

Journal ref: Solar Energy Materials & Solar Cells 65 (2001) 47-54