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Investigation of the microstructure of the fine-grained YPO$_4$:Gd ceramics with xenotime structure after Xe irradiation
Authors:
D. A. Mikhailov,
E. A. Potanina,
A. V. Nokhrin,
A. I. Orlova,
P. A. Yunin,
N. V. Sakharov,
M. S. Boldin,
O. A. Belkin,
V. A. Skuratov,
A. T. Isatov,
V. N. Chuvil'deev,
N. Y. Tabachkova
Abstract:
The paper reports on the preparation of xenotime-structured ceramics by the Spark Plasma Sintering (SPS) method. Phosphates Y$_{0.95}$Gd$_{0.05}$PO$_4$ (YPO$_4$:Gd) were obtained by the sol-gel method. The synthesized nanopowders are collected in large agglomerates 10-50 mkm in size. Ceramics has a fine-grained microstructure and a high relative density (98.67%). The total time of the SPS process…
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The paper reports on the preparation of xenotime-structured ceramics by the Spark Plasma Sintering (SPS) method. Phosphates Y$_{0.95}$Gd$_{0.05}$PO$_4$ (YPO$_4$:Gd) were obtained by the sol-gel method. The synthesized nanopowders are collected in large agglomerates 10-50 mkm in size. Ceramics has a fine-grained microstructure and a high relative density (98.67%). The total time of the SPS process was approximately 18 min. High-density sintered ceramics YPO$_4$:Gd with a xenotime structure were irradiated with Xe$^{+26}$ ions (E = 167 MeV) to fluences of $1\times10^{12}$-$3\times 10^{13}$ cm$^{-2}$. Complete amorphization at maximum fluence was not achieved. As the fluence increases, an insignificant increase in the depth of the amorphous layer is observed. According to the results of grazing incidence XRD (GIXRD), with an increase in fluence from $1\times10^{12}$-$3\times 10^{13}$ cm$^{-2}$, an increase in the volume fraction of the amorphous structure from 20 to 70% is observed. The intensity of XRD peak 200 YPO$_4$:Gd after recovery annealing (700$^\circ$C, 18 h) reached a value of ~80% of the initial intensity I0.
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Submitted 26 March, 2022;
originally announced March 2022.
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Peculiarities of superconducting properties of thin superconductor-normal metal bilayer with large ratio of resistivities
Authors:
D. Yu. Vodolazov,
E. E. Pestov,
S. N. Vdovichev,
M. Yu. Levichev,
S. S. Ustavshikov,
A. Yu. Aladyshkin,
A. V. Putilov,
P. A. Yunin,
A. I. El'kina,
N. N. Bukharov,
A. M. Klushin
Abstract:
We demonstrate, both theoretically and experimentally, that thin dirty superconductor-normal metal bilayer with resistivity of normal metal $ρ_N$ much smaller than normal-state resistivity of superconductor $ρ_S$ has unique superconducting properties. First of all the normal layer provides the dominant contribution to the diamagnetic response of whole bilayer structure in wide temperature interval…
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We demonstrate, both theoretically and experimentally, that thin dirty superconductor-normal metal bilayer with resistivity of normal metal $ρ_N$ much smaller than normal-state resistivity of superconductor $ρ_S$ has unique superconducting properties. First of all the normal layer provides the dominant contribution to the diamagnetic response of whole bilayer structure in wide temperature interval below the critical temperature due to proximity induced superconductivity. Secondly, the presence of the normal layer may increase the critical current $I_c$ in several times (the effect is not connected with enhanced vortex pinning), provides strong temperature dependence of both $I_c$ and effective magnetic field penetration depth even at temperatures much below the critical one and leads to the diode effect in parallel magnetic field. Besides of general interest we believe that the found results may be useful in construction of different kinds of superconducting detectors.
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Submitted 3 March, 2018;
originally announced March 2018.
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Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry
Authors:
M. N. Drozdov,
Y. N. Drozdov,
A. Csik,
A. V. Novikov,
K. Vad,
P. A. Yunin,
D. V. Yurasov,
S. F. Belykh,
G. P. Gololobov,
D. V. Suvorov,
A. Tolstogouzov
Abstract:
Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of intensity ratios of GeCs2+/SiCs2+ and 74Ge-/30Si- secondary ions and post-ionized 70Ge+/28Si+ sputtered neutrals with Ge concentration was obtained. The calibration d…
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Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of intensity ratios of GeCs2+/SiCs2+ and 74Ge-/30Si- secondary ions and post-ionized 70Ge+/28Si+ sputtered neutrals with Ge concentration was obtained. The calibration data were used for quantitative depth profiling of [10x(12.3 nm Si0.63Ge0.37/34 nm Si)] structures on Si. Satisfactory compliance of the quantified Ge concentration in SiGe layers with the data measured by high-resolution X-ray diffraction was obtained for both techniques. Both SIMS and SNMS experimental profiles were fitted using the Hofmann mixing-roughness-information depth (MRI) model. In case of TOF-SIMS the quality of the reconstruction was higher than for SNMS since not only the progressing roughening, but also crater effect and other processes unaccounted in the MRI simulation could have significant impact on plasma sputter depth profiling.
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Submitted 6 January, 2017;
originally announced January 2017.
