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Phonon-assisted tunneling in an isolated double dot system
Abstract: Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet electron wavefunctions and energies. It is found that at small doublet energies the piezoelectric rates due to flexural modes give the dominant contribution.… ▽ More
Submitted 14 May, 2005; v1 submitted 22 March, 2005; originally announced March 2005.
Comments: 7 pages, 12 figures, shortened text and corrected typos. 8 pages, 14 figures