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Two-dimensional heavy fermion in a monoatomic-layer Kondo lattice YbCu$_2$
Authors:
Takuto Nakamura,
Hiroki Sugihara,
Yitong Chen,
Ryu Yukawa,
Yoshiyuki Ohtsubo,
Kiyohisa Tanaka,
Miho Kitamura,
Hiroshi Kumigashira,
Shin-ichi Kimura
Abstract:
The Kondo effect between localized $f$-electrons and conductive carriers leads to exotic physical phenomena. Among them, heavy-fermion (HF) systems, in which massive effective carriers appear due to the Kondo effect, have fascinated many researchers. Dimensionality is also an important characteristic of the HF system, especially because it is strongly related to quantum criticality [S. Sachdev, Sc…
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The Kondo effect between localized $f$-electrons and conductive carriers leads to exotic physical phenomena. Among them, heavy-fermion (HF) systems, in which massive effective carriers appear due to the Kondo effect, have fascinated many researchers. Dimensionality is also an important characteristic of the HF system, especially because it is strongly related to quantum criticality [S. Sachdev, Science 288, 475 (2000)]. However, perfect two-dimensional (2D) HF materials have not been reported yet. Here, we report the surface electronic structure of the monoatomic-layer Kondo lattice YbCu$_2$ on a Cu(111) surface observed by synchrotron-based angle-resolved photoelectron spectroscopy. The 2D conducting band and the Yb 4$f$ state, located very close to the Fermi level, are observed. These bands are hybridized at low-temperature, forming the 2D HF state, with an evaluated coherent temperature of about 30 K. The effective mass of the 2D state is enhanced by a factor of 100 by the development of the HF state. Furthermore, clear evidence of the hybridization gap formation in the temperature dependence of the Kondo-resonance peak has been observed below the coherent temperature. Our study provides a new candidate as an ideal 2D HF material for understanding the Kondo effect at low dimensions.
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Submitted 12 June, 2023;
originally announced June 2023.
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Surface valence transition in SmS by alkali metal adsorption
Authors:
Takuto Nakamura,
Toru Nakaya,
Yoshiyuki Ohtsubo,
Hiroki Sugihara,
Kiyohisa Tanaka,
Ryu Yukawa,
Miho Kitamura,
Hiroshi Kumigashira,
Keiichiro Imura,
Hiroyuki S. Suzuki,
Noriaki K. Sato,
Shin-ichi Kimura
Abstract:
The electronic structure changes of SmS surfaces under potassium (K) do** are elucidated using synchrotron-based core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy (ARPES). The Sm core-level and ARPES spectra indicate that the Sm mean valence of the surface increased from the nearly divalent to trivalent states, with increasing K deposition. Carrier-induced valen…
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The electronic structure changes of SmS surfaces under potassium (K) do** are elucidated using synchrotron-based core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy (ARPES). The Sm core-level and ARPES spectra indicate that the Sm mean valence of the surface increased from the nearly divalent to trivalent states, with increasing K deposition. Carrier-induced valence transition (CIVT) from Sm$^{2+}$ to Sm$^{3+}$ exhibits a behavior opposite to that under conventional electron do**. Excess electrons are trapped by isolated excitons, which is inconsistent with the phase transition from the black insulator with Sm$^{2+}$ to the gold metal with Sm$^{3+}$ under pressure. This CIVT helps to clarify the pressure-induced black-to-golden phase transition in this material, which originates from the Mott transition of excitons.
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Submitted 30 May, 2022;
originally announced May 2022.
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Electronic structure of SrTi$_{1-x}$V$_x$O$_3$ films studied by ${\it in\ situ}$ photoemission spectroscopy: Screening for a transparent electrode material
Authors:
Tatsuhiko Kanda,
Daisuke Shiga,
Ryu Yukawa,
Naoto Hasegawa,
Duy Khanh Nguyen,
Xianglin Cheng,
Ryosuke Tokunaga,
Miho Kitamura,
Koji Horiba,
Kohei Yoshimatsu,
Hiroshi Kumigashira
Abstract:
This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of…
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This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of transparent electrodes by varying ${x}$. Systematic and significant spectral changes were found near the Fermi level (${E_{\rm F}}$) as a function of ${x}$, while the overall electronic structure of STVO is in good agreement with the prediction of band structure calculations. As ${x}$ decreases from 1.0, spectral weight transfer occurs from the coherent band near ${E_{\rm F}}$ to the incoherent states (lower Hubbard band) around 1.0-1.5 eV. Simultaneously, a pseudogap is formed at ${E_{\rm F}}$, indicating a significant reduction in quasiparticle spectral weight within close vicinity of ${E_{\rm F}}$. This pseudogap seems to evolve into an energy gap at ${x}$ = 0.4, suggesting the occurrence of a composition-driven metal-insulator transition. From angle-resolved photoemission spectroscopic results, the carrier concentration ${n}$ changes proportionally as a function of ${x}$ in the metallic range of ${x}$ = 0.6-1.0. In contrast, the mass enhancement factor, which is proportional to the effective mass (${m^*}$), does not change significantly with varying ${x}$. These results suggest that the key factor of ${n/m^*}$ in optimizing the performance of correlated-metal TCO is tuned by ${x}$, highlighting the potential of STVO to achieve the desired TCO performance in the metallic region.
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Submitted 22 May, 2021;
originally announced May 2021.
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Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$
Authors:
Hiroshi Takatsu,
Naoya Yamashina,
Daisuke Shiga,
Ryu Yukawa,
Koji Horiba,
Hiroshi Kumigashira,
Takahito Terashima,
Hiroshi Kageyama
Abstract:
SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$ substrate was cru…
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SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO$_3$ film is also verified by angle-resolved photoemission spectroscopy (ARPES) measurements showing clear Fermi surfaces.
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Submitted 4 December, 2020;
originally announced December 2020.
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Electronic structure of a 3x3-ordered silicon layer on Al(111)
Authors:
Y. Sato,
Y. Fukaya,
M. Cameau,
A. K. Kundu,
D. Shiga,
R. Yukawa,
K. Horiba,
C. -H. Chen,
A. Huang,
H. -T. Jeng,
T. Ozaki,
H. Kumigashira,
M. Niibe,
I. Matsuda
Abstract:
Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) impl…
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Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.
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Submitted 11 May, 2020;
originally announced May 2020.
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Thickness dependence of electronic and crystal structures in VO$_2$ ultrathin films: suppression of the collaborative Mott-Peierls transition
Authors:
D. Shiga,
B. E. Yang,
N. Hasegawa,
T. Kanda,
R. Tokunaga,
K. Yoshimatsu,
R. Yukawa,
M. Kitamura,
K. Horiba,
H. Kumigashira
Abstract:
Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral chang…
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Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral change associated with temperature-driven metal-insulator transition in VO$_2$ thick films holds down to 1.5 nm (roughly corresponding to five V atoms along the [001] direction), whereas VO$_2$ films of less than 1.0 nm exhibit insulating nature without V-V dimerization. These results suggest that the delicate balance between a Mott instability and a bandlike Peierls instability is modulated at a scale of a few nanometers by the dimensional crossover effects and confinement effects, which consequently induce the complicated electronic phase diagram of ultrathin VO$_2$ films.
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Submitted 1 May, 2020;
originally announced May 2020.
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Hard and soft x-ray photoemission spectroscopy study of the new Kondo system SmO thin film
Authors:
Shoya Sakamoto,
Kenichi Kaminaga,
Daichi Oka,
Ryu Yukawa,
Masafumi Horio,
Yuichi Yokoyama,
Kohei Yamamoto,
Kou Takubo,
Yosuke Nonaka,
Keisuke Koshiishi,
Masaki Kobayashi,
Arata Tanaka,
Akira Yasui,
Eiji Ikenaga,
Hiroki Wadati,
Hiroshi Kumigashira,
Tomoteru Fukumura,
Atsushi Fujimori
Abstract:
SmO thin film is a new Kondo system showing a resistivity upturn around 10 K and was theoretically proposed to have a topologically nontrivial band structure. We have performed hard x-ray and soft x-ray photoemission spectroscopy to elucidate the electronic structure of SmO. From the Sm 3$d$ core-level spectra, we have estimated the valence of Sm to be $\sim$2.96, proving that the Sm has a mixed v…
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SmO thin film is a new Kondo system showing a resistivity upturn around 10 K and was theoretically proposed to have a topologically nontrivial band structure. We have performed hard x-ray and soft x-ray photoemission spectroscopy to elucidate the electronic structure of SmO. From the Sm 3$d$ core-level spectra, we have estimated the valence of Sm to be $\sim$2.96, proving that the Sm has a mixed valence. The valence-band photoemission spectra exhibit a clear Fermi edge originating from the Sm 5$d$-derived band. The present finding is consistent with the theory suggesting a possible topological state in SmO and show that rare-earth monoxides or their heterostructures can be a new playground for the interplay of strong electron correlation and spin-orbit coupling.
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Submitted 14 April, 2020;
originally announced April 2020.
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Tunable two-dimensional electron system at the (110) surface of SnO$_2$
Authors:
J. Dai,
E. Frantzeskakis,
F. Fortuna,
P. Lömker,
R. Yukawa,
M. Thees,
S. Sengupta,
P. Le Fèvre,
F. Bertran,
J. E. Rault,
K. Horiba,
M. Müller,
H. Kumigashira,
A. F. Santander-Syro
Abstract:
We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalyt…
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We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band.
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Submitted 16 February, 2020;
originally announced February 2020.
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Natural van der Waals heterostructural single crystals with both magnetic and topological properties
Authors:
Jiazhen Wu,
Fucai Liu,
Masato Sasase,
Koichiro Ienaga,
Yukiko Obata,
Ryu Yukawa,
Koji Horiba,
Hiroshi Kumigashira,
Satoshi Okuma,
Takeshi Inoshita,
Hideo Hosono
Abstract:
Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic…
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Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.
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Submitted 16 November, 2019; v1 submitted 7 May, 2019;
originally announced May 2019.
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Relationship between charge redistribution and ferromagnetism at the heterointerface between perovskite oxides LaNiO$_3$ and LaMnO$_3$
Authors:
Miho Kitamura,
Masaki Kobayashi,
Enju Sakai,
Makoto Minohara,
Ryu Yukawa,
Daisuke Shiga,
Kenta Amemiya,
Yosuke Nonaka,
Goro Shibata,
Atsushi Fujimori,
Hiroshi Fujioka,
Koji Horiba,
Hiroshi Kumigashira
Abstract:
To investigate the relationship between the charge redistribution and ferromagnetism at the heterointerface between perovskite transition-metal oxides LaNiO$_3$ (LNO) and LaMnO$_3$ (LMO), we performed x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) measurements. In the LNO/LMO heterostructures with asymmetric charge redistribution, the electrons donated from Mn to Ni ion…
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To investigate the relationship between the charge redistribution and ferromagnetism at the heterointerface between perovskite transition-metal oxides LaNiO$_3$ (LNO) and LaMnO$_3$ (LMO), we performed x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) measurements. In the LNO/LMO heterostructures with asymmetric charge redistribution, the electrons donated from Mn to Ni ions are confined within one monolayer (ML) of LNO at the interface, whereas holes are distributed over 3-4 ML on the LMO side. A detailed analysis of the Ni-$L_{2,3}$ and Mn-$L_{2,3}$ XMCD spectra reveals that Ni magnetization is induced only by the Ni$^{2+}$ ions in the 1 ML LNO adjacent to the interface, while the magnetization of Mn ions is increased in the 3-4 ML LMO of the interfacial region. The characteristic length scale of the emergent (increased) interfacial ferromagnetism of the LNO (LMO) layers is in good agreement with that of the charge distribution across the interface, indicating a close relationship between the charge redistribution due to the interfacial charge transfer and the ferromagnetism of the LNO/LMO interface. Furthermore, the XMCD spectra clearly demonstrate that the vectors of induced magnetization of both ions are aligned ferromagnetically, suggesting that the delicate balance between the exchange interactions occurring inside each layer and across the interface may induce the canted ferromagnetism of Ni$^{2+}$ ions, resulting in weak magnetization in the 1 ML LNO adjacent to the interface.
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Submitted 2 April, 2019;
originally announced April 2019.
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Two-dimensional conducting layer on SrTiO$_{3}$ surface induced by hydrogenation
Authors:
Y. Takeuchi,
R. Hobara,
R. Akiyama,
A. Takayama,
S. Ichinokura,
R. Yukawa,
I. Matsuda,
S. Hasegawa
Abstract:
We found that a surface state induced by hydrogenation on the surface of SrTiO$_{3}$(001) (STO) did not obey the rigid band model, which was confirmed by in situ electrical resistivity measurements in ultrahigh vacuum. With exposure of atomic hydrogen on the STO, a new surface state (H-induced donor state, HDS) appears within the bulk band gap (an in-gap state), which donates electrons thermally a…
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We found that a surface state induced by hydrogenation on the surface of SrTiO$_{3}$(001) (STO) did not obey the rigid band model, which was confirmed by in situ electrical resistivity measurements in ultrahigh vacuum. With exposure of atomic hydrogen on the STO, a new surface state (H-induced donor state, HDS) appears within the bulk band gap (an in-gap state), which donates electrons thermally activated to the bulk conduction band, resulting in downward bending of the bulk bands beneath the surface. The doped electrons flow through the space-charge layer in two-dimensional manner parallel to the surface. The observed semiconducting behavior in the temperature dependence of electronic transport is explained by the thermal activation of carriers. The HDS and the bulk conduction band are non-rigid in energy position; they come closer with increasing the hydrogen adsorption. Eventually the HDS saturates its position around 88 meV below the bottom of the bulk conduction band. The sheet conductivity, accordingly, also saturates at 1.95$\pm$ 0.02 $μ$ S/sq. with increasing hydrogen adsorption, corresponding to completion of the hydrogenation of the surface.
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Submitted 4 April, 2019; v1 submitted 31 March, 2019;
originally announced April 2019.
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Evolution of electronic states and emergence of superconductivity in the polar semiconductor GeTe by do** valence-skip** In
Authors:
M. Kriener,
M. Sakano,
M. Kamitani,
M. S. Bahramy,
R. Yukawa,
K. Horiba,
H. Kumigashira,
K. Ishizaka,
Y. Tokura,
Y. Taguchi
Abstract:
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by do** and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tu…
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GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by do** and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tuned In do**. Our results moreover show the existence of a critical do** concentration around $x = 0.12$ in Ge$_{1-x}$In$_{x}$Te, where various properties take either an extremum or change their characters: The structure changes from polarly-rhombohedral to cubic, the resistivity sharply increases by orders of magnitude, the type of charge carriers changes from holes to electrons, and the density of states diminishes at the dawn of an emerging superconducting phase. By core-level photoemission spectroscopy we find indications of a change in the In-valence state from In$^{3+}$ to In$^{1+}$ with increasing $x$, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on superconductivity.
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Submitted 24 January, 2019;
originally announced January 2019.
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Emergence of metallic monoclinic states of VO$_2$ films induced by K deposition
Authors:
Daisuke Shiga,
Makoto Minohara,
Miho Kitamura,
Ryu Yukawa,
Koji Horiba,
Hiroshi Kumigashira
Abstract:
In order to study the origin of metallization of VO$_2$ induced by electron injection, we deposit K atoms onto the surface of VO$_2$ films grown on TiO$_2$ (001) substrates, and we investigate the change in the electronic and crystal structures using ${in~situ}$ photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The deposition of K atoms onto a surface of insulating monoclinic VO…
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In order to study the origin of metallization of VO$_2$ induced by electron injection, we deposit K atoms onto the surface of VO$_2$ films grown on TiO$_2$ (001) substrates, and we investigate the change in the electronic and crystal structures using ${in~situ}$ photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The deposition of K atoms onto a surface of insulating monoclinic VO$_2$ leads to a phase transition from insulator to metal. In this metallization state, the V-V dimerization characteristic to the monoclinic phase of VO$_2$ still exists, as revealed by the polarization dependence of the XAS spectra. Furthermore, the monoclinic metal undergoes a transition to a monoclinic insulator with decrease in temperature, and to a rutile metal with increase in temperature. These results indicate the existence of a metallic monoclinic phase around the boundary between the insulating monoclinic and metallic rutile phases in the case of electron-doped VO$_2$.
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Submitted 25 November, 2018;
originally announced November 2018.
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Giant Rashba splitting of quasi-1D surface states on Bi/InAs(110)-(2$\times$1)
Authors:
T. Nakamura,
Y. Ohtsubo,
Y. Yamashita,
S. Ideta,
K. Tanaka,
K. Yaji,
A. Harasawa,
S. Shin,
F. Komori,
R. Yukawa,
K. Horiba,
H. Kumigashira,
S. Kimura
Abstract:
Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of…
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Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of the Rashba parameter ($α_{\rm R}$) reached quite a large value ($\sim$5.5 eVÅ). The present result would provide a fertile playground for further studies of the exotic electronic phenomena in 1D or Q1D systems with the spin-split electronic states as well as for advanced spintronic devices.
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Submitted 4 August, 2018; v1 submitted 19 April, 2018;
originally announced April 2018.
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Non-trivial surface states of samarium hexaboride at the (111) surface
Authors:
Y. Ohtsubo,
Y. Yamashita,
K. Hagiwara,
S. Ideta,
K. Tanaka,
R. Yukawa,
K. Horiba,
H. Kumigashira,
K. Miyamoto,
T. Okuda,
W. Hirano,
F. Iga,
S. Kimura
Abstract:
The peculiar metallic electronic states observed in the Kondo insulator, samarium hexaboride (SmB$_6$), has stimulated considerable attention among those studying non-trivial electronic phenomena. However, experimental studies of these states have led to controversial conclusions mainly to the difficulty and inhomogeneity of the SmB$_6$ crystal surface. Here, we show the detailed electronic struct…
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The peculiar metallic electronic states observed in the Kondo insulator, samarium hexaboride (SmB$_6$), has stimulated considerable attention among those studying non-trivial electronic phenomena. However, experimental studies of these states have led to controversial conclusions mainly to the difficulty and inhomogeneity of the SmB$_6$ crystal surface. Here, we show the detailed electronic structure of SmB$_6$ with angle-resolved photoelectron spectroscopy measurements of the three-fold (111) surface where only two inequivalent time-reversal-invariant momenta (TRIM) exist. We observe the metallic two-dimensional state was dispersed across the bulk Kondo gap. Its helical in-plane spin polarisation around the surface TRIM suggests that SmB$_6$ is topologically non-trivial, according to the topological classification theory for weakly correlated systems. Based on these results, we propose a simple picture of the controversial topological classification of SmB$_6$.
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Submitted 25 April, 2019; v1 submitted 26 March, 2018;
originally announced March 2018.
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High-density two-dimensional electron system induced by oxygen vacancies in ZnO
Authors:
T. C. Rödel,
J. Dai,
F. Fortuna,
E. Frantzeskakis,
P. Le Fèvre,
F. Bertran,
M. Kobayashi,
R. Yukawa,
T. Mitsuhashi,
M. Kitamura,
K. Horiba,
H. Kumigashira,
A. F. Santander-Syro
Abstract:
We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the…
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We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a 2D Fermi liquid with a Debye distribution of phonons.
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Submitted 19 February, 2018;
originally announced February 2018.
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Peculiar bonding associated with atomic do** and hidden honeycombs in borophene
Authors:
Chi-Cheng Lee,
Baojie Feng,
Marie D'angelo,
Ryu Yukawa,
Ro-Ya Liu,
Takahiro Kondo,
Hiroshi Kumigashira,
Iwao Matsuda,
Taisuke Ozaki
Abstract:
Engineering atomic-scale structures allows great manipulation of physical properties and chemical processes for advanced technology. We show that the B atoms deployed at the centers of honeycombs in boron sheets, borophene, behave as nearly perfect electron donors for filling the graphitic $σ$ bonding states without forming additional in-plane bonds by first-principles calculations. The dilute ele…
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Engineering atomic-scale structures allows great manipulation of physical properties and chemical processes for advanced technology. We show that the B atoms deployed at the centers of honeycombs in boron sheets, borophene, behave as nearly perfect electron donors for filling the graphitic $σ$ bonding states without forming additional in-plane bonds by first-principles calculations. The dilute electron density distribution owing to the weak bonding surrounding the center atoms provides easier atomic-scale engineering and is highly tunable via in-plane strain, promising for practical applications, such as modulating the extraordinarily high thermal conductance that exceeds the reported value in graphene. The hidden honeycomb bonding structure suggests an unusual energy sequence of core electrons that has been verified by our high-resolution core-level photoelectron spectroscopy measurements. With the experimental and theoretical evidence, we demonstrate that borophene exhibits a peculiar bonding structure and is distinctive among two-dimensional materials.
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Submitted 7 February, 2018; v1 submitted 8 December, 2017;
originally announced December 2017.
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Converting topological insulators into topological metals within the tetradymite family
Authors:
K. -W. Chen,
N. Aryal,
J. Dai,
D. Graf,
S. Zhang,
S. Das,
P. Le Fevre,
F. Bertran,
R. Yukawa,
K. Horiba,
H. Kumigashira,
E. Frantzeskakis,
F. Fortuna,
L. Balicas,
A. F. Santander-Syro,
E. Manousakis,
R. E. Baumbach
Abstract:
We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the elec…
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We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi$_2$Se$_3$, where the surface Dirac bands are at the $Γ-$point, for (Zr,Hf)$_2$Te$_2$(P,As) there are Dirac cones of strong topological character around both the $\bar Γ$- and $\bar {M}$-points which are above and below the Fermi energy, respectively. For Ti$_2$Te$_2$P the surface state is predicted to exist only around the $\bar {M}$-point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus, this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).
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Submitted 11 November, 2017;
originally announced November 2017.
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Growth of Antiperovskite Oxide Ca3SnO Films by Pulsed Laser Deposition
Authors:
Makoto Minohara,
Ryu Yukawa,
Miho Kitamura,
Reiji Kumai,
Youichi Murakami,
Hiroshi Kumigashira
Abstract:
We report the epitaxial growth of Ca3SnO antiperovskite oxide films on (001)-oriented cubic yttria-stabilized zirconia (YSZ) substrates by using a conventional pulsed laser deposition (PLD) technique. In this work, a sintered Ca3SnO pellet is used as the ablation target. X-ray diffraction measurements demonstrate the (001) growth of Ca3SnO films with the antiperovskite structure and a cube-on-cube…
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We report the epitaxial growth of Ca3SnO antiperovskite oxide films on (001)-oriented cubic yttria-stabilized zirconia (YSZ) substrates by using a conventional pulsed laser deposition (PLD) technique. In this work, a sintered Ca3SnO pellet is used as the ablation target. X-ray diffraction measurements demonstrate the (001) growth of Ca3SnO films with the antiperovskite structure and a cube-on-cube orientation relationship to the YSZ substrate. The successful synthesis of the antiperovskite phase is further confirmed by x-ray photoemission spectroscopy. These results strongly suggest that antiperovskite-oxide films can be directly grown on substrates from the target material using a PLD technique.
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Submitted 10 October, 2017;
originally announced October 2017.
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Emergence of quantum critical behavior in metallic quantum-well states of strongly correlated oxides
Authors:
Masaki Kobayashi,
Kohei Yoshimatsu,
Taichi Mitsuhashi,
Miho Kitamura,
Enju Sakai,
Ryu Yukawa,
Makoto Minohara,
Atsushi Fujimori,
Koji Horiba,
Hiroshi Kumigashira
Abstract:
Controlling quantum critical phenomena in strongly correlated electron systems, which emerge in the neighborhood of a quantum phase transition, is a major challenge in modern condensed matter physics. Quantum critical phenomena are generated from the delicate balance between long-range order and its quantum fluctuation. So far, the nature of quantum phase transitions has been investigated by chang…
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Controlling quantum critical phenomena in strongly correlated electron systems, which emerge in the neighborhood of a quantum phase transition, is a major challenge in modern condensed matter physics. Quantum critical phenomena are generated from the delicate balance between long-range order and its quantum fluctuation. So far, the nature of quantum phase transitions has been investigated by changing a limited number of external parameters such as pressure and magnetic field. We propose a new approach for investigating quantum criticality by changing the strength of quantum fluctuation that is controlled by the dimensional crossover in metallic quantum well (QW) structures of strongly correlated oxides. With reducing layer thickness to the critical thickness of metal-insulator transition, crossover from a Fermi liquid to a non-Fermi liquid has clearly been observed in the metallic QW of SrVO$_3$ by \textit{in situ} angle-resolved photoemission spectroscopy. Non-Fermi liquid behavior with the critical exponent $α = 1$ is found to emerge in the two-dimensional limit of the metallic QW states, indicating that a quantum critical point exists in the neighborhood of the thickness-dependent Mott transition. These results suggest that artificial QW structures provide a unique platform for investigating novel quantum phenomena in strongly correlated oxides in a controllable fashion.
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Submitted 7 June, 2017;
originally announced June 2017.
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Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in Ultrathin Bi2Te3 Films
Authors:
C. -Z. Xu,
Y. Liu,
R. Yukawa,
L. -X. Zhang,
I. Matsuda,
T. Miller,
T. -C. Chiang
Abstract:
Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit)…
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Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit) to twelve layers (bulk limit) over a wide range of incident photon energy. The data show complex variations in magnitude and sign reversals, which are nevertheless well described by a theoretical calculation including all three photoemission mechanisms: dipole transition, surface photoemission, and spin-orbit coupling. The results establish the nontrivial connection between the spin-orbit texture and CD.
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Submitted 26 May, 2017;
originally announced May 2017.
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Dirac fermions in borophene
Authors:
Baojie Feng,
Osamu Sugino,
Ro-Ya Liu,
** Zhang,
Ryu Yukawa,
Mitsuaki Kawamura,
Takushi Iimori,
Howon Kim,
Yukio Hasegawa,
Hui Li,
Lan Chen,
Kehui Wu,
Hiroshi Kumigashira,
Fumio Komori,
Tai-Chang Chiang,
Sheng Meng,
Iwao Matsuda
Abstract:
Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) su…
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Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) surface. Our tight-binding analysis revealed that the lattice of the β12-sheet could be decomposed into two triangular sublattices in a way similar to that for a honeycomb lattice, thereby hosting Dirac cones. Furthermore, each Dirac cone could be split by introducing periodic perturbations representing overlayer-substrate interactions. These unusual electronic structures were confirmed by angle-resolved photoemission spectroscopy and validated by first-principles calculations. Our results suggest monolayer boron as a new platform for realizing novel high-speed low-dissipation devices.
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Submitted 2 February, 2017;
originally announced February 2017.
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Semimetallic "Electride Bands" Derived from Interlayer Electrons in Quasi-Two-Dimensional Electride Y$_2$C
Authors:
Koji Horiba,
Ryu Yukawa,
Taichi Mitsuhashi,
Miho Kitamura,
Takeshi Inoshita,
Noriaki Hamada,
Shigeki Otani,
Naoki Ohashi,
Sachiko Maki,
Jun-ichi Yamaura,
Hideo Hosono,
Youichi Murakami,
Hiroshi Kumigashira
Abstract:
Two-dimensional (2D) electrides are a new concept material in which anionic electrons are confined in the interlayer space between positively charged layers. We have performed angle-resolved photoemission spectroscopy measurements on Y$_2$C, which is a possible 2D electride, in order to verify the formation of 2D electride states in Y$_2$C. We clearly observe the existence of semimetallic "electri…
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Two-dimensional (2D) electrides are a new concept material in which anionic electrons are confined in the interlayer space between positively charged layers. We have performed angle-resolved photoemission spectroscopy measurements on Y$_2$C, which is a possible 2D electride, in order to verify the formation of 2D electride states in Y$_2$C. We clearly observe the existence of semimetallic "electride bands" near the Fermi level, as predicted by ${ab}$ ${initio}$ calculations, conclusively demonstrating that Y$_2$C is a quasi-2D electride with electride bands derived from interlayer anionic electrons.
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Submitted 3 June, 2016;
originally announced June 2016.
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Phonon-Dressed Two-Dimensional Carriers on the ZnO Surface
Authors:
R. Yukawa,
K. Ozawa,
S. Yamamoto,
H. Iwasawa,
K. Shimada,
E. F. Schwier,
K. Yoshimatsu,
H. Kumigashira,
H. Namatame,
M. Taniguchi,
I. Matsuda
Abstract:
Two-dimensional (2D) metallic states formed on the ZnO(10$\bar{1}$0) surface by hydrogen adsorption have been investigated using angle-resolved photoelectron spectroscopy (ARPES). The observed metallic state is characterized by a peak-dip-hump structure at just below the Fermi level and a long tail structure extending up to 600 meV in binding energy. The peak and hump positions are separated by ab…
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Two-dimensional (2D) metallic states formed on the ZnO(10$\bar{1}$0) surface by hydrogen adsorption have been investigated using angle-resolved photoelectron spectroscopy (ARPES). The observed metallic state is characterized by a peak-dip-hump structure at just below the Fermi level and a long tail structure extending up to 600 meV in binding energy. The peak and hump positions are separated by about 70 meV, a value close to the excitation energy of longitudinal optical (LO) phonons. Spectral functions formulated on the basis of the 2D electron-phonon coupling well reproduce the ARPES intensity distribution of the metallic states. This spectral analysis suggests that the 2D electrons accumulated on the ZnO surface couple to the LO phonons and that this coupling is the origin of the anomalous long tail. Our results indicate that the 2D electrons at the ZnO surface are described as the electron liquid model.
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Submitted 23 August, 2016; v1 submitted 19 April, 2016;
originally announced April 2016.
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Surface Kondo Effect and Non-Trivial Metallic State of the Kondo Insulator YbB12
Authors:
Kenta Hagiwara,
Yoshiyuki Ohtsubo,
Masaharu Matsunami,
Shin-ichiro Ideta,
Kiyohisa Tanaka,
Hidetoshi Miyazaki,
Julien Rault,
Patrick Le Fèvre,
François Bertran,
Amina Taleb-Ibrahimi,
Ryu Yukawa,
Masaki Kobayashi,
Koji Horiba,
Hiroshi Kumigashira,
Fumitoshi Iga,
Shin-ichi Kimura
Abstract:
A synergistic effect between strong electron correlation and spin-orbit interaction (SOI) has been theoretically predicted to result in a new topological state of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6…
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A synergistic effect between strong electron correlation and spin-orbit interaction (SOI) has been theoretically predicted to result in a new topological state of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6 has been actively discussed. Here, we show a metallic SS on the clean surface of another TKI candidate YbB12(001), using angle-resolved photoelectron spectroscopy. The SS showed temperature-dependent reconstruction corresponding with the Kondo effect observed for bulk states. Despite the low-temperature insulating bulk, the reconstructed SS with c-f hybridization was metallic, forming a closed Fermi contour surrounding $\barΓ$ on the surface Brillouin zone and agreeing with the theoretically expected behavior for SS on TKIs. These results demonstrate the temperature-dependent holistic reconstruction of two-dimensional states localized on KIs surface driven by the Kondo effect.
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Submitted 25 February, 2016;
originally announced February 2016.
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Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?
Authors:
S. Backes,
T. C. Rödel,
F. Fortuna,
E. Frantzeskakis,
P. Le Fèvre,
F. Bertran,
M. Kobayashi,
R. Yukawa,
T. Mitsuhashi,
M. Kitamura,
K. Horiba,
H. Kumigashira,
R. Saint-Martin,
A. Fouchet,
B. Berini,
Y. Dumont,
A. J. Kim,
F. Lechermann,
H. O. Jeschke,
M. J. Rozenberg,
R. Valentí,
A. F. Santander-Syro
Abstract:
We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously…
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We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides.
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Submitted 22 February, 2016;
originally announced February 2016.
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Deviation from Fermi-liquid behavior in two-dimensional surface states of Au-induced nanowires on Ge(001) by correlation and localization
Authors:
K. Yaji,
R. Yukawa,
S. Kim,
Y. Ohtsubo,
P. Le Fèvre,
F. Bertran,
A. Taleb-Ibrahimi,
I. Matsuda,
K. Nakatsuji,
F. Komori
Abstract:
The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic s…
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The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic structure is one-dimensional. The two-dimensional metallic states exhibit remarkable suppression of the photoelectron intensity near a Fermi energy. This suppression can be explained by the correlation and localization effects in disordered metals, which is a deviation from a Fermi-liquid model.
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Submitted 16 February, 2016;
originally announced February 2016.
