Showing 1–17 of 17 results for author: Yu, Z G

Highly sensitive and efficient 1550 nm photodetector for room temperature operation

Authors: Rituraj, Zhi Gang Yu, R. M. E. B. Kandegedara, Shanhui Fan, Srini Krishnamurthy

Abstract: Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in this segment is avalanche photodetectors operating particularly in the Geiger mode. Often the requirements for RT operation and for a high EQE are in conflict,… ▽ More Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in this segment is avalanche photodetectors operating particularly in the Geiger mode. Often the requirements for RT operation and for a high EQE are in conflict, resulting in a compromised solution. We have developed a device which employs a two-dimensional (2D) semiconductor material on a co-optimized dielectric photonic crystal substrate to simultaneously decrease the dark current by three orders of magnitude at RT and maintain an EQE of >99%. The device is amenable to avalanching and form a basis for single photon detection with ultra-low dark current and high photodetection efficiency. Harnessing the high carrier mobility of 2D materials, the device has ~ps jitter time and can be integrated into a large 2D array camera. △ Less

Submitted 12 May, 2024; v1 submitted 20 March, 2024; originally announced April 2024.

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 hetero-junction: A first-principles study

Authors: Viacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, Kah-Wee Ang, Yong-Wei Zhang

Abstract: Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in monolayer MoS2, that is, S monovacancy, S divacancy and MoS (Mo substitution at S site) antisite defects, are considered. The following findings are revealed: (… ▽ More Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in monolayer MoS2, that is, S monovacancy, S divacancy and MoS (Mo substitution at S site) antisite defects, are considered. The following findings are revealed: (1) The SBH for the monolayer MoS2 with defects is universally higher than that for its defect-free counterpart. (2) S divacancy and MoS antisite defects increase the SBH to a larger extent than S monovacancy. (3) A defect located in the inner sublayer of MoS2, which is adjacent to Au substrate, increases the SBH to a larger extent than that in the outer sublayer of MoS2. (4) An increase in defect density increases the SBH. These findings indicate a large variation of SBH with the defect type, location, and concentration. We also compare our results with previously experimentally measured SBH for Au/MoS2 contact and postulate possible reasons for the large differences among existing experimental measurements and between experimental measurements and theoretical predictions. The findings and insights revealed here may provide practice guidelines for modulation and optimization of SBH in Au/MoS2 and similar heterojunctions via defect engineering. △ Less

Submitted 2 August, 2022; originally announced August 2022.

Comments: 20 pages, 8 figures

A potential superhard carbon allotrope: T5-carbon

Authors: Xian-Yong Ding, Chao Zhang, Dong-Qi Wang, Bing-Sheng Li, Qing** Wang, Zhi Gen Yu, Kah-Wee Ang, Yong-Wei Zhang

Abstract: A novel stable carbon allotrope is predicted by using first-principles calculations. This allotrope is obtained by replacing one of the two atoms in the primitive cell of diamond with a carbon tetrahedron, thus it contains five atoms in one primitive cell, termed T5-carbon. The stabilities of T5-carbon are checked in structural, thermal, vibrational and energy calculations. The calculations on ele… ▽ More A novel stable carbon allotrope is predicted by using first-principles calculations. This allotrope is obtained by replacing one of the two atoms in the primitive cell of diamond with a carbon tetrahedron, thus it contains five atoms in one primitive cell, termed T5-carbon. The stabilities of T5-carbon are checked in structural, thermal, vibrational and energy calculations. The calculations on electronic, thermal, and mechanical properties reveal that T5-carbon is a semiconductor with an indirect band gap of 3.18 eV, and has a lattice thermal conductivity of 409 W/mK. More importantly, the Vickers hardness of T5-carbon is 76.5 GPa which is lower than that of diamond but larger than those of T-carbon and cubic boron nitride, confirming the superhard properties of T5-carbon, suggesting its wide applications in mechanical devices. △ Less

Submitted 7 May, 2020; originally announced May 2020.

Comments: 5 pages, 6 figures

Metasurface polarization splitter

Authors: Brian A. Slovick, You Zhou, Zhi Gang Yu, Ivan I. Kravchenckou, Dayrl P. Briggs, Parikshit Moitra, Srini Krishnamurthy, Jason Valentine

Abstract: Polarization beam splitters, devices that separate the two orthogonal polarizations of light into different propagation directions, are one of the most ubiquitous optical elements. However, traditionally polarization splitters rely on bulky optical materials, while emerging optoelectronic and photonic circuits require compact, chip-scale polarization splitters. Here we show that a subwavelength re… ▽ More Polarization beam splitters, devices that separate the two orthogonal polarizations of light into different propagation directions, are one of the most ubiquitous optical elements. However, traditionally polarization splitters rely on bulky optical materials, while emerging optoelectronic and photonic circuits require compact, chip-scale polarization splitters. Here we show that a subwavelength rectangular lattice of cylindrical silicon Mie resonators functions as a polarization splitter, efficiently reflecting one polarization while transmitting the other. We show that the polarization splitting arises from the anisotropic permittivity and permeability of the metasurface due to the two-fold rotational symmetry of the rectangular unit cell. The high polarization efficiency, low loss, and low profile make these metasurface polarization splitters ideally suited for monolithic integration with optoelectronic and photonic circuits. △ Less

Submitted 13 October, 2016; originally announced October 2016.

Journal ref: Phil. Trans. R. Soc. A 375, 20160072 (2017)

Generalized effective-medium theory for metamaterials

Authors: Brian A. Slovick, Zhi Gang Yu, Srini Krishnamurthy

Abstract: We present an effective-medium model for calculating the frequency-dependent effective permittivity $ε(ω)$ and permeability $μ(ω)$ of metamaterial composites containing spherical particles with arbitrary permittivity and permeability. The model is derived from the zero-scattering condition within the dipole approximation, but does not invoke any additional long-wavelength approximations. As a resu… ▽ More We present an effective-medium model for calculating the frequency-dependent effective permittivity $ε(ω)$ and permeability $μ(ω)$ of metamaterial composites containing spherical particles with arbitrary permittivity and permeability. The model is derived from the zero-scattering condition within the dipole approximation, but does not invoke any additional long-wavelength approximations. As a result, it captures the effects of spatial dispersion and predicts a finite effective refractive index and antiresonances in $ε(ω)$ and $μ(ω)$, in agreement with numerical finite-element calculations. △ Less

Submitted 27 March, 2014; v1 submitted 3 February, 2014; originally announced February 2014.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 89, 155118 (2014)

Vibrational edge modes in intrinsically heterogeneous doped transition metal oxides

Authors: I. Martin, E. Kaneshita, R. J. McQueeney, Z. G. Yu, A. R. Bishop

Abstract: By applying an unrestricted Hartree-Fock and a Random Phase approximations to a multiband Peierls-Hubbard Hamiltonian, we study the phonon mode structure in models of transition metal oxides in the presence of intrinsic nanoscale inhomogeneities induced by hole do**. We identify low frequency $local$ vibrational modes pinned to the sharp interfaces between regions of distinct electronic struct… ▽ More By applying an unrestricted Hartree-Fock and a Random Phase approximations to a multiband Peierls-Hubbard Hamiltonian, we study the phonon mode structure in models of transition metal oxides in the presence of intrinsic nanoscale inhomogeneities induced by hole do**. We identify low frequency $local$ vibrational modes pinned to the sharp interfaces between regions of distinct electronic structure (doped and undoped) and separated in frequency from the band of extended phonons. A characteristic of these ``edge'' modes is that their energy is essentially insensitive to the do** level. We discuss the experimental manifestations of these modes in inelastic neutron scattering, and also in spin and charge excitation spectra. △ Less

Submitted 8 November, 2004; v1 submitted 22 March, 2004; originally announced March 2004.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 70 (2004) 224514.

Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

Authors: C. Ruester, T. Borzenko, C. Gould, G. Schmidt, L. W. Molenkamp, X. Liu, T. J. Wojtowicz, J. K. Furdyna, Z. G. Yu, M. E. Flatte

Abstract: We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trap**. For metallic samples we find a magnetoresistance up to 8%,… ▽ More We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trap**. For metallic samples we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000 %. △ Less

Submitted 19 August, 2003; originally announced August 2003.

Comments: 4 pages, 3 figures, submited to Phys. Rev. Lett

Journal ref: Phys. rev. Lett. 91, 216602, (2003)

Circularly polarized electroluminescence in spin-LED structures

Authors: Z. G. Yu, W. H. Lau, M. E. Flatte'

Abstract: We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons are spin polarized. It is essential to account for the orbital coherence of the spin-polarized holes when they are captured in the quantum well to understand r… ▽ More We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons are spin polarized. It is essential to account for the orbital coherence of the spin-polarized holes when they are captured in the quantum well to understand recent experiments demonstrating polarized edge emission from hole spin injection. The calculations explain many features of the circular polarizations of edge and vertically emitted luminescence for spin polarized hole injection from Mn-doped ferromagnetic semiconductors, and for spin-polarized electron injection from II-VI dilute magnetic semiconductors. △ Less

Submitted 11 August, 2003; originally announced August 2003.

Comments: 5 pages, 5 figures

Vibrational edge modes in intrinsically inhomogeneous doped transition metal oxides

Authors: I. Martin, R. J. McQueeney, A. R. Bishop, Z. G. Yu

Abstract: By applying an unrestriced Hartree-Fock approximation and a Random Phase approximation to multiband Peierls-Hubbard Hamiltonians, we determine the phonon mode structure in models of transition metal oxides in the presence of intrinsic nanoscale inhomogeneities induced by hole do**. We identify low frequency $local$ vibrational modes pinned to the interface between regions of distinct electroni… ▽ More By applying an unrestriced Hartree-Fock approximation and a Random Phase approximation to multiband Peierls-Hubbard Hamiltonians, we determine the phonon mode structure in models of transition metal oxides in the presence of intrinsic nanoscale inhomogeneities induced by hole do**. We identify low frequency $local$ vibrational modes pinned to the interface between regions of distinct electronic structure and separated in frequency from the band of extended phonons. A major characteristic of these ``edge'' modes is that their energy is essentially insensitive to the do** level, while their intensity increases with the density of interfaces (and thus do** level). We argue that the presence of such modes is a typical feature of systems with phase separation, including cuprates, nickelates, manganites, and bismuthates. We specifically address the experimental signatures of these modes in lattice inelastic neutron scattering. △ Less

Submitted 26 June, 2003; originally announced June 2003.

Comments: 4 pages

Recognition of an organism from fragments of its complete genome

Authors: V. V. Anh, K. S. Lau, Z. G. Yu

Abstract: This paper considers the problem of matching fragment to organism using its complete genome. Our method is based on the probability measure representation of a genome. We first demonstrate that these probability measures can be modelled as recurrent iterated function systems (RIFS) consisting of four contractive similarities. Our hypothesis is that the multifractal characteristic of the probabil… ▽ More This paper considers the problem of matching fragment to organism using its complete genome. Our method is based on the probability measure representation of a genome. We first demonstrate that these probability measures can be modelled as recurrent iterated function systems (RIFS) consisting of four contractive similarities. Our hypothesis is that the multifractal characteristic of the probability measure of a complete genome, as captured by the RIFS, is preserved in its reasonably long fragments. We compute the RIFS of fragments of various lengths and random starting points, and compare with that of the original sequence for recognition using the Euclidean distance. A demonstration on five randomly selected organisms supports the above hypothesis. △ Less

Submitted 15 July, 2002; originally announced July 2002.

Comments: 9 pages,5 figures, Accepted for publication by Phys. Rev. E

Journal ref: Phys. Rev. E, vol. 66, (2002) 031910.

Spin diffusion and injection in semiconductor structures: Electric field effects

Authors: Z. G. Yu, M. E. Flatte

Abstract: In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime whic… ▽ More In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analogue in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes locally determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor (NS$^+$) at the FM interface, thus FM/NS$^+$/NS structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors. △ Less

Submitted 17 June, 2002; originally announced June 2002.

Journal ref: Phys. Rev. B 66, 235302 (2002).

Electric-field dependent spin diffusion and spin injection into semiconductors

Authors: Z. G. Yu, M. E. Flatte

Abstract: We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhance… ▽ More We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length. △ Less

Submitted 23 January, 2002; originally announced January 2002.

Comments: 5 pages, 3 eps figures

Journal ref: Phys. Rev. B 66, 201202(R) (2002).

Charge localization and phonon spectra in hole doped La2NiO4

Authors: R. J. McQueeney, A. R. Bishop, Ya-Sha Yi, Z. G. Yu

Abstract: The in-plane oxygen vibrations in La2NiO4 are investigated for several hole-do** concentrations both theoretically and experimentally via inelastic neutron scattering. Using an inhomogeneous Hartree-Fock plus RPA numerical method in a two-dimensional Peierls-Hubbard model, it is found that the do** induces stripe ordering of localized charges, and that the strong electron-lattice coupling ca… ▽ More The in-plane oxygen vibrations in La2NiO4 are investigated for several hole-do** concentrations both theoretically and experimentally via inelastic neutron scattering. Using an inhomogeneous Hartree-Fock plus RPA numerical method in a two-dimensional Peierls-Hubbard model, it is found that the do** induces stripe ordering of localized charges, and that the strong electron-lattice coupling causes the in-plane oxygen modes to split into two subbands. This result agrees with the phonon band splitting observed by inelastic neutron scattering in La2-xSrxNiO4. Predictions of strong electron-lattice coupling in La2NiO4, the proximity of both oxygen-centered and nickel-centered charge ordering, and the relation between charged stripe ordering and the splitting of the in-plane phonon band upon do** are emphasized. △ Less

Submitted 7 February, 2000; originally announced February 2000.

Comments: 4 pages, 3 figures, in RevTeX

Report number: LAUR-00-382

Charge ordering and long-range interactions in layered transition metal oxides: a quasiclassical continuum study

Authors: Branko P. Stojkovic, Z. G. Yu, A. L. Chernyshev, A. R. Bishop, A. H. Castro Neto, Niels Gronbech-Jensen

Abstract: The competition between long-range and short-range interactions among holes moving in an antiferromagnet (AF), is studied within a model derived from the spin density wave picture of layered transition metal oxides. A novel numerical approach is developed which allows one to solve the problem at finite hole densities in very large systems (of order hundreds of lattice spacings), albeit in a quas… ▽ More The competition between long-range and short-range interactions among holes moving in an antiferromagnet (AF), is studied within a model derived from the spin density wave picture of layered transition metal oxides. A novel numerical approach is developed which allows one to solve the problem at finite hole densities in very large systems (of order hundreds of lattice spacings), albeit in a quasiclassical limit, and to correctly incorporate the long-range part of the Coulomb interaction. The focus is on the problem of charge ordering and the charge phase diagram: at low temperatures four different phases are found, depending on the strength of the magnetic (dipolar) interaction generated by the spin-wave exchange, and the density of holes. The four phases are the Wigner crystal, diagonal stripes, a grid phase (horizontal-vertical stripe loops) and a glassy-clumped phase. In the presence of both in-plane and out-of-plane charged impurities the stripe ordering is suppressed, although finite stripe segments persist. At finite temperatures multiscale (intermittency) dynamics is found, reminiscent of that in glasses. The dynamics of stripe melting and its implications for experiments is discussed. △ Less

Submitted 10 March, 2000; v1 submitted 23 November, 1999; originally announced November 1999.

Comments: A number of minor changes; one figure removed; REVTEX

Journal ref: Phys. Rev. B 62, 4353 (2000).

Charge ordering and long-range interactions in layered transition metal oxides

Authors: Branko P. Stojkovic, Z. G. Yu, A. R. Bishop, A. H. Castro Neto, Niels Gronbech-Jensen

Abstract: We study the competition between long-range and short-range interactions among holes within the spin density wave picture of layered transition metal oxides. We focus on the problem of charge ordering and the charge phase diagram. We show that the main interactions are the long-range Coulomb interaction and a dipolar short-range interaction generated by the short-range antiferromagnetic fluctuat… ▽ More We study the competition between long-range and short-range interactions among holes within the spin density wave picture of layered transition metal oxides. We focus on the problem of charge ordering and the charge phase diagram. We show that the main interactions are the long-range Coulomb interaction and a dipolar short-range interaction generated by the short-range antiferromagnetic fluctuations. We find four different phases depending on the strength of the dipolar interaction and the density of holes: Wigner crystal, diagonal stripes, horizontal-vertical stripes (loops) and a glassy-clumped phase. We discuss the effect of temperature, disorder and lattice effects on these phases. △ Less

Submitted 27 May, 1998; originally announced May 1998.

Comments: REVTEX, 2 PS figures, uses epsf.sty

Excitons in quasi-one dimensional organics: Strong correlation approximation

Authors: Z. G. Yu, A. Saxena, A. R. Bishop

Abstract: An exciton theory for quasi-one dimensional organic materials is developed in the framework of the Su-Schrieffer-Heeger Hamiltonian augmented by short range extended Hubbard interactions. Within a strong electron-electron correlation approximation, the exciton properties are extensively studied. Using scattering theory, we analytically obtain the exciton energy and wavefunction and derive a crit… ▽ More An exciton theory for quasi-one dimensional organic materials is developed in the framework of the Su-Schrieffer-Heeger Hamiltonian augmented by short range extended Hubbard interactions. Within a strong electron-electron correlation approximation, the exciton properties are extensively studied. Using scattering theory, we analytically obtain the exciton energy and wavefunction and derive a criterion for the existence of a $B_u$ exciton. We also systematically investigate the effect of impurities on the coherent motion of an exciton. The coherence is measured by a suitably defined electron-hole correlation function. It is shown that, for impurities with an on-site potential, a crossover behavior will occur if the impurity strength is comparable to the bandwidth of the exciton, corresponding to exciton localization. For a charged impurity with a spatially extended potential, in addition to localization the exciton will dissociate into an uncorrelated electron-hole pair when the impurity is sufficiently strong to overcome the Coulomb interaction which binds the electron-hole pair. Interchain coupling effects are also discussed by considering two polymer chains coupled through nearest-neighbor interchain hop** $t_{\perp}$ and interchain Coulomb interaction $V_{\perp}$. Within the $t$ matrix scattering formalism, for every center-of-mass momentum, we find two poles determined only by $V_{\perp}$, which correspond to the interchain excitons. Finally, the exciton state is used to study the charge transfer from a polymer chain to an adjacent dopant molecule. △ Less

Submitted 23 September, 1997; originally announced September 1997.

Comments: 24 pages, 23 eps figures, pdf file of the paper available

Journal ref: Phys. Rev. B 56, 3697 (1997)

Excitons in two coupled conjugated polymer chains

Authors: Z. G. Yu, M. W. Wu, X. S. Rao, X. Sun, A. R. Bishop

Abstract: We have studied the exciton states in two coupled conjugated polymer chains which are modeled individually by the Su-Schrieffer-Heeger Hamiltonian and coupled by an interchain electron-transfer term. Both the intra- and inter-chain long range Coulomb interactions are taken into account. The properties of the lowest symmetric and antisymmetric exciton states are extensively discussed for both the… ▽ More We have studied the exciton states in two coupled conjugated polymer chains which are modeled individually by the Su-Schrieffer-Heeger Hamiltonian and coupled by an interchain electron-transfer term. Both the intra- and inter-chain long range Coulomb interactions are taken into account. The properties of the lowest symmetric and antisymmetric exciton states are extensively discussed for both the parallel and anti-parallel ordering between these two chains. It is found that, for these two kinds of ordering, the features of excitons are quite different. Possible implications for the experiment of luminescent polymers are also addressed. △ Less

Submitted 23 September, 1997; originally announced September 1997.

Comments: 19 pages, pdf file of the paper available

Journal ref: J. Phys. Cond. Mat 8, 8847 (1996)