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Direct magnetic imaging of fractional Chern insulators in twisted MoTe$_2$ with a superconducting sensor
Authors:
Evgeny Redekop,
Canxun Zhang,
Heonjoon Park,
Jiaqi Cai,
Eric Anderson,
Owen Sheekey,
Trevor Arp,
Grigory Babikyan,
Samuel Salters,
Kenji Watanabe,
Takashi Taniguchi,
Xiaodong Xu,
Andrea F. Young
Abstract:
In the absence of time reversal symmetry, orbital magnetization provides a sensitive probe of topology and interactions, with particularly rich phenomenology in Chern insulators where topological edge states carry large equilibrium currents. Here, we use a nanoscale superconducting sensor to map the magnetic fringe fields in twisted bilayers of MoTe$_2$, where transport and optical sensing experim…
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In the absence of time reversal symmetry, orbital magnetization provides a sensitive probe of topology and interactions, with particularly rich phenomenology in Chern insulators where topological edge states carry large equilibrium currents. Here, we use a nanoscale superconducting sensor to map the magnetic fringe fields in twisted bilayers of MoTe$_2$, where transport and optical sensing experiments have revealed the formation of fractional Chern insulator (FCI) states at zero magnetic field. At a temperature of 1.6K, we observe oscillations in the local magnetic field associated with fillings $ν=-1,-2/3,-3/5,-4/7$ and $-5/9$ of the first moiré hole band, consistent with the formation of FCIs at these fillings. By quantitatively reconstructing the magnetization, we determine the local thermodynamic gaps of the most robust FCI state at $ν=-2/3$, finding $^{-2/3}Δ$ as large as 7 meV. Spatial map** of the charge density- and displacement field-tuned magnetic phase diagram further allows us to characterize sample disorder, which we find to be dominated by both inhomogeneity in the effective unit cell area as well as inhomogeneity in the band edge offset and bound dipole moment. Our results highlight both the challenges posed by structural disorder in the study of twisted homobilayer moiré systems and the opportunities afforded by the remarkably robust nature of the underlying correlated topological states.
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Submitted 16 May, 2024;
originally announced May 2024.
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Optical Imaging of Flavor Order in Flat Band Graphene
Authors:
Tian Xie,
Tobias M. Wolf,
Siyuan Xu,
Zhiyuan Cui,
Richen Xiong,
Yunbo Ou,
Patrick Hays,
Ludwig F Holleis,
Yi Guo,
Owen I Sheekey,
Caitlin Patterson,
Trevor Arp,
Kenji Watanabe,
Takashi Taniguchi,
Seth Ariel Tongay,
Andrea F Young,
Allan H. MacDonald,
Chenhao **
Abstract:
Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transit…
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Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transition metal dichalcogenide layer. Through a systematic study of rhombohedral and rotationally faulted graphene bilayers and trilayers, we show that when the semiconducting dichalcogenide is in direct contact with the graphene, the exciton response is most sensitive to the large momentum rearrangement of the Fermi surface, providing information that is distinct from and complementary to electrical compressibility measurements. The wide-field imaging capability of optical probes allows us to obtain spatial maps of flavor orders with high throughput, and with broad temperature and device compatibility. Our work paves the way for optical probing and imaging of flavor orders in flat band graphene systems.
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Submitted 13 May, 2024;
originally announced May 2024.
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Anyonic statistics and slow quasiparticle dynamics in a graphene fractional quantum Hall interferometer
Authors:
Noah L. Samuelson,
Liam A. Cohen,
Will Wang,
Simon Blanch,
Takashi Taniguchi,
Kenji Watanabe,
Michael P. Zaletel,
Andrea F. Young
Abstract:
Anyons are two dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, anyonic statistics manifest directly in the edge-state Fabry-Pérot interferometer geometry, where the presence of $N_{qp}$ localized anyons in the interferometer bulk contributes a phase $N_{qp} θ_a$ to the observed interference pattern,…
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Anyons are two dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, anyonic statistics manifest directly in the edge-state Fabry-Pérot interferometer geometry, where the presence of $N_{qp}$ localized anyons in the interferometer bulk contributes a phase $N_{qp} θ_a$ to the observed interference pattern, where $θ_a$ is twice the statistical exchange phase. Here, we report a measurement of $θ_a$ in a monolayer graphene Fabry-Pérot interferometer at $ν$ = 1/3. We find a preponderance of phase slips with magnitudes $Δθ\approx 2 π/ 3$, confirming the result of past experiments in GaAs quantum wells and consistent with expectations for the tunneling of Abelian anyons into the interferometer bulk. In contrast to prior work, however, single anyon tunneling events manifest as instantaneous and irreversible phase slips, indicative of quasiparticle equilibration times exceeding 20 minutes in some cases. We use the discrepancy between the quasiparticle equilibration rate and our measurement speed to vary the interferometer area and $N_{qp}$ independently, allowing us to precisely determine the interferometer phase and monitor the entry and exit of individual anyons to the interferometer loop in the time domain. Besides providing a replication of previous interferometric measurements sensitive to $θ_a$ in GaAs, our results bring anyon dynamics into the experimental regime and suggest that the average `topological charge' of a mesoscopic quantum Hall device can be held constant over hour long timescales.
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Submitted 28 May, 2024; v1 submitted 28 March, 2024;
originally announced March 2024.
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Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Authors:
Liam A. Cohen,
Noah L. Samuelson,
Taige Wang,
Kai Klocke,
Cian C. Reeves,
Takashi Taniguchi,
Kenji Watanabe,
Sagar Vijay,
Michael P. Zaletel,
Andrea F. Young
Abstract:
Quantum point contacts (QPCs) are an essential component in mesoscopic devices. Here, we study the transmission of quantum Hall edge modes through a gate-defined QPC in monolayer graphene. We observe resonant tunneling peaks and a nonlinear conductance pattern characteristic of Coulomb-blockaded localized states. The in-plane electric polarizability reveals the states are localized at a classicall…
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Quantum point contacts (QPCs) are an essential component in mesoscopic devices. Here, we study the transmission of quantum Hall edge modes through a gate-defined QPC in monolayer graphene. We observe resonant tunneling peaks and a nonlinear conductance pattern characteristic of Coulomb-blockaded localized states. The in-plane electric polarizability reveals the states are localized at a classically-unstable electrostatic saddle point. We explain this unexpected finding within a self-consistent Thomas-Fermi model, finding that localization of a zero-dimensional state at the saddle point is favored whenever the applied confinement potential is sufficiently soft compared to the Coulomb energy. Our results provide a direct demonstration of Coulomb-driven reconstruction at the boundary of a quantum Hall system.
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Submitted 18 January, 2024;
originally announced January 2024.
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Intervalley coherence and intrinsic spin-orbit coupling in rhombohedral trilayer graphene
Authors:
Trevor Arp,
Owen Sheekey,
Haoxin Zhou,
C. L. Tschirhart,
Caitlin L. Patterson,
H. M. Yoo,
Ludwig Holleis,
Evgeny Redekop,
Grigory Babikyan,
Tian Xie,
Jiewen Xiao,
Yaar Vituri,
Tobias Holder,
Takashi Taniguchi,
Kenji Watanabe,
Martin E. Huber,
Erez Berg,
Andrea F. Young
Abstract:
Rhombohedral graphene multilayers provide a clean and highly reproducible platform to explore the emergence of superconductivity and magnetism in a strongly interacting electron system. Here, we use electronic compressibility and local magnetometry to explore the phase diagram of this material class in unprecedented detail. We focus on rhombohedral trilayer in the quarter metal regime, where the e…
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Rhombohedral graphene multilayers provide a clean and highly reproducible platform to explore the emergence of superconductivity and magnetism in a strongly interacting electron system. Here, we use electronic compressibility and local magnetometry to explore the phase diagram of this material class in unprecedented detail. We focus on rhombohedral trilayer in the quarter metal regime, where the electronic ground state is characterized by the occupation of a single spin and valley isospin flavor. Our measurements reveal a subtle competition between valley imbalanced (VI) orbital ferromagnets and intervalley coherent (IVC) states in which electron wave functions in the two momentum space valleys develop a macroscopically coherent relative phase. Contrasting the in-plane spin susceptibility of the IVC and VI phases reveals the influence of graphene's intrinsic spin-orbit coupling, which drives the emergence of a distinct correlated phase with hybrid VI and IVC character. Spin-orbit also suppresses the in-plane magnetic susceptibility of the VI phase, which allows us to extract the spin-orbit coupling strength of $λ\approx 50μ$eV for our hexagonal boron nitride-encapsulated graphene system. We discuss the implications of finite spin-orbit coupling on the spin-triplet superconductors observed in both rhombohedral and twisted graphene multilayers.
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Submitted 2 November, 2023; v1 submitted 5 October, 2023;
originally announced October 2023.
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Cascade of multi-electron bubble phases in monolayer graphene at high Landau level filling
Authors:
Fangyuan Yang,
Ruiheng Bai,
Alexander A. Zibrov,
Sandeep Joy,
Takashi Taniguchi,
Kenji Watanabe,
Brian Skinner,
Mark O. Goerbig,
Andrea F. Young
Abstract:
The phase diagram of an interacting two-dimensional electron system in a high magnetic field is enriched by the varying form of the effective Coulomb interaction, which depends strongly on the Landau level index. While the fractional quantum Hall states that dominate in the lower energy Landau levels have been explored experimentally in a variety of two-dimensional systems, much less work has been…
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The phase diagram of an interacting two-dimensional electron system in a high magnetic field is enriched by the varying form of the effective Coulomb interaction, which depends strongly on the Landau level index. While the fractional quantum Hall states that dominate in the lower energy Landau levels have been explored experimentally in a variety of two-dimensional systems, much less work has been done to explore electron solids owing to their subtle transport signatures and extreme sensitivity to disorder. Here we use chemical potential measurements to map the phase diagram of electron solid states in $N=2$, $N=3$, and $N=4$ Landau levels in monolayer graphene. Direct comparison between our data and theoretical calculations reveals a cascade of density-tuned phase transitions between electron bubble phases up to two, three or four electrons per bubble in the N=2, 3 and 4 Landau levels respectively. Finite temperature measurements are consistent with melting of the solids for T$\approx$1K.
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Submitted 8 September, 2023;
originally announced September 2023.
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Energy gap of the even-denominator fractional quantum Hall state in bilayer graphene
Authors:
Alexandre Assouline,
Taige Wang,
Haoxin Zhou,
Liam A. Cohen,
Fangyuan Yang,
Ruining Zhang,
Takashi Taniguchi,
Kenji Watanabe,
Roger S. K. Mong,
Michael P. Zaletel,
Andrea F. Young
Abstract:
Bernal bilayer graphene hosts even denominator fractional quantum Hall states thought to be described by a Pfaffian wave function with nonabelian quasiparticle excitations. Here we report the quantitative determination of fractional quantum Hall energy gaps in bilayer graphene using both thermally activated transport and by direct measurement of the chemical potential. We find a transport activati…
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Bernal bilayer graphene hosts even denominator fractional quantum Hall states thought to be described by a Pfaffian wave function with nonabelian quasiparticle excitations. Here we report the quantitative determination of fractional quantum Hall energy gaps in bilayer graphene using both thermally activated transport and by direct measurement of the chemical potential. We find a transport activation gap of 5.1K at B = 12T for a half-filled N=1 Landau level, consistent with density matrix renormalization group calculations for the Pfaffian state. However, the measured thermodynamic gap of 11.6K is smaller than theoretical expectations for the clean limit by approximately a factor of two. We analyze the chemical potential data near fractional filling within a simplified model of a Wigner crystal of fractional quasiparticles with long-wavelength disorder, explaining this discrepancy. Our results quantitatively establish bilayer graphene as a robust platform for probing the non-Abelian anyons expected to arise as the elementary excitations of the even-denominator state.
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Submitted 10 August, 2023;
originally announced August 2023.
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Gate-Defined Topological Josephson Junctions in Bernal Bilayer Graphene
Authors:
Ying-Ming Xie,
Étienne Lantagne-Hurtubise,
Andrea F. Young,
Stevan Nadj-Perge,
Jason Alicea
Abstract:
Recent experiments on Bernal bilayer graphene (BLG) deposited on monolayer WSe$_2$ revealed robust, ultra-clean superconductivity coexisting with sizable induced spin-orbit coupling. Here we propose BLG/WSe$_2$ as a platform to engineer gate-defined planar topological Josephson junctions, where the normal and superconducting regions descend from a common material. More precisely, we show that if s…
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Recent experiments on Bernal bilayer graphene (BLG) deposited on monolayer WSe$_2$ revealed robust, ultra-clean superconductivity coexisting with sizable induced spin-orbit coupling. Here we propose BLG/WSe$_2$ as a platform to engineer gate-defined planar topological Josephson junctions, where the normal and superconducting regions descend from a common material. More precisely, we show that if superconductivity in BLG/WSe$_2$ is gapped and emerges from a parent state with inter-valley coherence, then Majorana zero modes can form in the barrier region upon applying weak in-plane magnetic fields. Our results spotlight a potential pathway for `internally engineered' topological superconductivity that minimizes detrimental disorder and orbital-magnetic-field effects.
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Submitted 10 December, 2023; v1 submitted 23 April, 2023;
originally announced April 2023.
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Imaging inter-valley coherent order in magic-angle twisted trilayer graphene
Authors:
Hyun** Kim,
Youngjoon Choi,
Étienne Lantagne-Hurtubise,
Cyprian Lewandowski,
Alex Thomson,
Lingyuan Kong,
Haoxin Zhou,
Eli Baum,
Yiran Zhang,
Ludwig Holleis,
Kenji Watanabe,
Takashi Taniguchi,
Andrea F. Young,
Jason Alicea,
Stevan Nadj-Perge
Abstract:
Magic-angle twisted trilayer graphene (MATTG) exhibits a range of strongly correlated electronic phases that spontaneously break its underlying symmetries. The microscopic nature of these phases and their residual symmetries stands as a key outstanding puzzle whose resolution promises to shed light on the origin of superconductivity in twisted materials. Here we investigate correlated phases of MA…
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Magic-angle twisted trilayer graphene (MATTG) exhibits a range of strongly correlated electronic phases that spontaneously break its underlying symmetries. The microscopic nature of these phases and their residual symmetries stands as a key outstanding puzzle whose resolution promises to shed light on the origin of superconductivity in twisted materials. Here we investigate correlated phases of MATTG using scanning tunneling microscopy and identify striking signatures of interaction-driven spatial symmetry breaking. In low-strain samples, over a filling range of about 2-3 electrons or holes per moiré unit cell, we observe atomic-scale reconstruction of the graphene lattice that accompanies a correlated gap in the tunneling spectrum. This short-scale restructuring appears as a Kekulé supercell -- implying spontaneous inter-valley coherence between electrons -- and persists in a wide range of magnetic fields and temperatures that coincide with the development of the gap. Large-scale maps covering several moiré unit cells further reveal a slow evolution of the Kekulé pattern, indicating that atomic-scale reconstruction coexists with translation symmetry breaking at the much longer moiré scale. We employ auto-correlation and Fourier analyses to extract the intrinsic periodicity of these phases and find that they are consistent with the theoretically proposed incommensurate Kekulé spiral order. Moreover, we find that the wavelength characterizing moiré-scale modulations monotonically decreases with hole do** away from half-filling of the bands and depends only weakly on the magnetic field. Our results provide essential insights into the nature of MATTG correlated phases in the presence of strain and imply that superconductivity emerges from an inter-valley coherent parent state.
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Submitted 20 April, 2023;
originally announced April 2023.
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Nematicity and Orbital Depairing in Superconducting Bernal Bilayer Graphene with Strong Spin Orbit Coupling
Authors:
Ludwig Holleis,
Caitlin L. Patterson,
Yiran Zhang,
Yaar Vituri,
Heun Mo Yoo,
Haoxin Zhou,
Takashi Taniguchi,
Kenji Watanabe,
Erez Berg,
Stevan Nadj-Perge,
Andrea F. Young
Abstract:
Superconductivity (SC) is a ubiquitous feature of graphite allotropes, having been observed in Bernal bilayers[1], rhombohedral trilayers[2], and a wide variety of angle-misaligned multilayers[3-6]. Despite significant differences in the electronic structure across these systems, supporting the graphite layer on a WSe$_2$ substrate has been consistently observed to expand the range of SC in carrie…
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Superconductivity (SC) is a ubiquitous feature of graphite allotropes, having been observed in Bernal bilayers[1], rhombohedral trilayers[2], and a wide variety of angle-misaligned multilayers[3-6]. Despite significant differences in the electronic structure across these systems, supporting the graphite layer on a WSe$_2$ substrate has been consistently observed to expand the range of SC in carrier density and temperature[7-10]. Here, we report the observation of two distinct superconducting states (denoted SC$_1$ and SC$_2$) in Bernal bilayer graphene with strong proximity-induced Ising spin-orbit coupling. Quantum oscillations show that while the normal state of SC$_1$ is consistent with the single-particle band structure, SC$_2$ emerges from a nematic normal state with broken rotational symmetry. Both superconductors are robust to in-plane magnetic fields, violating the paramagnetic limit; however, neither reach fields expected for spin-valley locked Ising superconductors. We use our knowledge of the Fermi surface geometry of SC$_1$ to argue that superconductivity is limited by orbital depairing arising from the imperfect layer polarization of the electron wavefunctions. Finally, a comparative analysis of transport and thermodynamic compressibility measurements in SC$_2$ shows that the proximity to the observed isospin phase boundaries, observed in other rhombohedral graphene allotropes, is likely coincidental, constraining theories of unconventional superconducting pairing mechanisms in theses systems.
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Submitted 12 June, 2024; v1 submitted 1 March, 2023;
originally announced March 2023.
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On-chip time-domain terahertz spectroscopy of superconducting films below the diffraction limit
Authors:
Alex Potts,
Abhay Nayak,
Michael Nagel,
Kelson Kaj,
Biljana Stamenic,
Demis D. John,
Richard D. Averitt,
Andrea F. Young
Abstract:
Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy is challenging when samples are physically smaller than the diffraction limit of ~0.5 mm, as is typical, for example, in van der Waals materials and heterostructures. Here, we present an on-chip, time-domain THz spectrome…
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Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy is challenging when samples are physically smaller than the diffraction limit of ~0.5 mm, as is typical, for example, in van der Waals materials and heterostructures. Here, we present an on-chip, time-domain THz spectrometer based on semiconducting photoconductive switches with a bandwidth of 200 GHz to 750 GHz. We measure the optical conductivity of a 7.5-$μ$m wide NbN film across the superconducting transition, demonstrating spectroscopic signatures of the superconducting gap in a sample smaller than 2% of the Rayleigh diffraction limit. Our spectrometer features an interchangeable sample architecture, making it ideal for probing superconductivity, magnetism, and charge order in strongly correlated van der Waals materials.
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Submitted 10 February, 2023;
originally announced February 2023.
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Universal chiral Luttinger liquid behavior in a graphene fractional quantum Hall point contact
Authors:
Liam A. Cohen,
Noah L. Samuelson,
Taige Wang,
Takashi Taniguchi,
Kenji Watanabe,
Michael P. Zaletel,
Andrea F. Young
Abstract:
One dimensional conductors are described by Luttinger liquid theory, which predicts a power-law suppression of the density of states near the Fermi level. The scaling exponent is non-universal in the general case, but is predicted to be quantized for the chiral edge states of the fractional quantum Hall effect. Here, we report conductance measurements across a point contact linking integer and fra…
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One dimensional conductors are described by Luttinger liquid theory, which predicts a power-law suppression of the density of states near the Fermi level. The scaling exponent is non-universal in the general case, but is predicted to be quantized for the chiral edge states of the fractional quantum Hall effect. Here, we report conductance measurements across a point contact linking integer and fractional quantum Hall edge states. At weak coupling, we observe the predicted universal quadratic scaling with temperature and voltage. At strong coupling, the conductance saturates to e^2/2h, arising from perfect Andreev reflection of fractionalized quasi-particles at the point contact. We use the strong coupling physics to realize a nearly dissipationless DC voltage step-up transformer, whose gain of 3/2 arises directly from topological fractionalization of electrical charge.
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Submitted 2 December, 2022;
originally announced December 2022.
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Deep learning extraction of band structure parameters from density of states: a case study on trilayer graphene
Authors:
Paul Henderson,
Areg Ghazaryan,
Alexander A. Zibrov,
Andrea F. Young,
Maksym Serbyn
Abstract:
The development of two-dimensional materials has resulted in a diverse range of novel, high-quality compounds with increasing complexity. A key requirement for a comprehensive quantitative theory is the accurate determination of these materials' band structure parameters. However, this task is challenging due to the intricate band structures and the indirect nature of experimental probes. In this…
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The development of two-dimensional materials has resulted in a diverse range of novel, high-quality compounds with increasing complexity. A key requirement for a comprehensive quantitative theory is the accurate determination of these materials' band structure parameters. However, this task is challenging due to the intricate band structures and the indirect nature of experimental probes. In this work, we introduce a general framework to derive band structure parameters from experimental data using deep neural networks. We applied our method to the penetration field capacitance measurement of trilayer graphene, an effective probe of its density of states. First, we demonstrate that a trained deep network gives accurate predictions for the penetration field capacitance as a function of tight-binding parameters. Next, we use the fast and accurate predictions from the trained network to automatically determine tight-binding parameters directly from experimental data, with extracted parameters being in a good agreement with values in the literature. We conclude by discussing potential applications of our method to other materials and experimental techniques beyond penetration field capacitance.
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Submitted 18 September, 2023; v1 submitted 12 October, 2022;
originally announced October 2022.
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Intrinsic spin Hall torque in a moire Chern magnet
Authors:
C. L. Tschirhart,
Evgeny Redekop,
Lizhong Li,
Tingxin Li,
Shengwei Jiang,
T. Arp,
O. Sheekey,
Takashi Taniguchi,
Kenji Watanabe,
Kin Fai Mak,
Jie Shan,
A. F. Young
Abstract:
In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection. For example, spin may be injected by a nonmagnetic layer exhibiting a large spin Hall effect, a phenomenon known as spin-orbit torque. Here, we demonstrate a spi…
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In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection. For example, spin may be injected by a nonmagnetic layer exhibiting a large spin Hall effect, a phenomenon known as spin-orbit torque. Here, we demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe2/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moire superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe2/WSe2 and other moire materials. The switching current density of 10^3 Amps per square centimeter is significantly less than reported in other platforms paving the way for efficient control of magnetic order.
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Submitted 5 May, 2022;
originally announced May 2022.
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Nanoscale electrostatic control in ultra clean van der Waals heterostructures by local anodic oxidation of graphite gates
Authors:
Liam A. Cohen,
Noah L. Samuelson,
Taige Wang,
Kai Klocke,
Cian C. Reeves,
Takashi Taniguchi,
Kenji Watanabe,
Sagar Vijay,
Michael P. Zaletel,
Andrea F. Young
Abstract:
In an all-van der Waals heterostructure, the active layer, gate dielectrics and gate electrodes are assembled from two-dimensional crystals that have a low density of atomic defects. This design allows two-dimensional electron systems with very low disorder to be created, particularly in heterostructures where the active layer also has intrinsically low disorder, such as crystalline graphene layer…
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In an all-van der Waals heterostructure, the active layer, gate dielectrics and gate electrodes are assembled from two-dimensional crystals that have a low density of atomic defects. This design allows two-dimensional electron systems with very low disorder to be created, particularly in heterostructures where the active layer also has intrinsically low disorder, such as crystalline graphene layers or metal dichalcogenide heterobilayers. A key missing ingredient has been nanoscale electrostatic control, with existing methods for fabricated local gates typically introducing unwanted contamination. Here we describe a resist-free local anodic oxidation process for patterning sub 100nm features in graphite gates, and their subsequent integration into an all-van der Waals heterostructure. We define a quantum point contact in the fractional quantum Hall regime as a benchmark device and observe signatures of chiral Luttinger liquid behaviour, indicating an absence of extrinsic scattering centres in the vicinity of the point contact. In the integer quantum Hall regime, we demonstrate in situ control of the edge confinement potential, a key requirement for the precision control of chiral edge states. This technique may enable the fabrication of devices capable of single anyon control and coherent edge-state interferometry in the fractional quantum Hall regime.
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Submitted 25 February, 2024; v1 submitted 21 April, 2022;
originally announced April 2022.
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Isospin magnetism and spin-triplet superconductivity in Bernal bilayer graphene
Authors:
Haoxin Zhou,
Ludwig Holleis,
Yu Saito,
Liam Cohen,
William Huynh,
Caitlin L. Patterson,
Fangyuan Yang,
Takashi Taniguchi,
Kenji Watanabe,
Andrea F. Young
Abstract:
We report the observation of spin-polarized superconductivity in Bernal bilayer graphene when doped to a saddle-point van Hove singularity generated by large applied perpendicular electric field. We observe a cascade of electrostatic gate-tuned transitions between electronic phases distinguished by their polarization within the isospin space defined by the combination of the spin and momentum-spac…
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We report the observation of spin-polarized superconductivity in Bernal bilayer graphene when doped to a saddle-point van Hove singularity generated by large applied perpendicular electric field. We observe a cascade of electrostatic gate-tuned transitions between electronic phases distinguished by their polarization within the isospin space defined by the combination of the spin and momentum-space valley degrees of freedom. While all of these phases are metallic at zero magnetic field, we observe a transition to a superconducting state at finite $B_\parallel\approx 150$mT applied parallel to the two dimensional sheet. Superconductivity occurs near a symmetry breaking transition, and exists exclusively above the $B_\parallel$-limit expected of a paramagnetic superconductor with the observed $T_C\approx 30$mK, implying a spin-triplet order parameter.
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Submitted 30 November, 2021; v1 submitted 21 October, 2021;
originally announced October 2021.
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Quantum oscillations in 2D insulators induced by graphite gates
Authors:
Jiacheng Zhu,
Tingxin Li,
Andrea F. Young,
Jie Shan,
Kin Fai Mak
Abstract:
We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different two-dimensional systems, including mono- and bilayer Td-WTe2, angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene, which all share a simi…
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We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different two-dimensional systems, including mono- and bilayer Td-WTe2, angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene, which all share a similar graphite-gated geometry. We find that the resistivity of the 2D system generically shows quantum oscillations as a function of magnetic field corresponding to a high-density Fermi surface when they are tuned near an insulating state, in contravention of naïve band theory. Simultaneous measurement of the resistivity of the graphite gates show that these oscillations are precisely correlated with quantum oscillations in the resistivity of the graphite gates themselves. Further supporting this connection, the oscillations are quenched when the graphite gate is replaced by TaSe2, a high-density metal that does not show quantum oscillations. The observed phenomenon arises from the oscillatory behavior of graphite density of states, which modulates the device capacitance and, as a consequence, the carrier density in the sample layer even when a constant electrochemical potential is maintained between the sample and the gate electrode. Oscillations are most pronounced near insulating states where the resistivity is strongly density dependent. Our study suggests a unified mechanism for quantum oscillations in graphite-gated 2D insulators based on sample-gate coupling.
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Submitted 29 July, 2021; v1 submitted 21 July, 2021;
originally announced July 2021.
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Superconductivity in rhombohedral trilayer graphene
Authors:
Haoxin Zhou,
Tian Xie,
Takashi Taniguchi,
Kenji Watanabe,
Andrea F. Young
Abstract:
We report the observation of superconductivity in rhombohedral trilayer graphene electrostatically doped with holes. Superconductivity occurs in two distinct regions within the space of gate-tuned charge carrier density and applied electric displacement field, which we denote SC1 and SC2. The high sample quality allows for detailed map** of the normal state Fermi surfaces by quantum oscillations…
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We report the observation of superconductivity in rhombohedral trilayer graphene electrostatically doped with holes. Superconductivity occurs in two distinct regions within the space of gate-tuned charge carrier density and applied electric displacement field, which we denote SC1 and SC2. The high sample quality allows for detailed map** of the normal state Fermi surfaces by quantum oscillations, which reveal that in both cases superconductivity arises from a normal state described by an annular Fermi sea that is proximal to an isospin symmetry breaking transition where the Fermi surface degeneracy changes. The upper out-of-plane critical field $B_{C\perp}\approx 10 \mathrm{mT}$ for SC1 and $1\mathrm{mT}$ for SC2, implying coherence lengths $ξ$ of 200nm and 600nm, respectively. The simultaneous observation of transverse magnetic electron focusing implies a mean free path $\ell\gtrsim3.5\mathrm{μm}$. Superconductivity is thus deep in the clean limit, with the disorder parameter $d=ξ/\ell<0.1$. SC1 emerge from a paramagnetic normal state and is suppressed with in-plane magnetic fields in agreement with the Pauli paramagnetic limit. In contrast, SC2 emerges from a spin-polarized, valley-unpolarized half-metal. Measurements of the in-plane critical field show that this superconductor exceeds the Pauli limit by at least one order of magnitude. We discuss our results in light of several mechanisms including conventional phonon-mediated pairing, pairing due to fluctuations of the proximal isospin order, and intrinsic instabilities of the annular Fermi liquid. Our observation of superconductivity in a clean and structurally simple two-dimensional metal hosting a variety of gate tuned magnetic states may enable a new class of field-effect controlled mesoscopic electronic devices combining correlated electron phenomena.
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Submitted 14 June, 2021;
originally announced June 2021.
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Topological charge density waves at half-integer filling of a moiré superlattice
Authors:
Hryhoriy Polshyn,
Yuxuan Zhang,
Manish A. Kumar,
Tomohiro Soejima,
Patrick Ledwith,
Kenji Watanabe,
Takashi Taniguchi,
Ashvin Vishwanath,
Michael P. Zaletel,
Andrea F. Young
Abstract:
At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and Hofstadter bands; in both cases, a large magnetic field is required to engineer the underlying flat band. The recent observation of quantum anomalous Hall effects (QA…
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At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and Hofstadter bands; in both cases, a large magnetic field is required to engineer the underlying flat band. The recent observation of quantum anomalous Hall effects (QAH) in narrow band moiré systems has led to the theoretical prediction that such phases may be realized even at zero magnetic field. Here we report the experimental observation of insulators with Chern number $C=1$ in the zero magnetic field limit at $ν=3/2$ and $7/2$ filling of the moiré superlattice unit cell in twisted monolayer-bilayer graphene (tMBG). Our observation of Chern insulators at half-integer values of $ν$ suggests spontaneous doubling of the superlattice unit cell, in addition to spin- and valley-ferromagnetism. This is confirmed by Hartree-Fock calculations, which find a topological charge density wave ground state at half filling of the underlying $C=2$ band, in which the Berry curvature is evenly partitioned between occupied and unoccupied states. We find the translation symmetry breaking order parameter is evenly distributed across the entire folded superlattice Brillouin zone, suggesting that the system is in the flat band, strongly correlated limit. Our findings show that the interplay of quantum geometry and Coulomb interactions in moiré bands allows for topological phases at fractional superlattice filling that spontaneously break time-reversal symmetry, a prerequisite in pursuit of zero magnetic field phases harboring fractional statistics as elementary excitations or bound to lattice dislocations.
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Submitted 2 April, 2021;
originally announced April 2021.
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Half and quarter metals in rhombohedral trilayer graphene
Authors:
Haoxin Zhou,
Tian Xie,
Areg Ghazaryan,
Tobias Holder,
James R. Ehrets,
Eric M. Spanton,
Takashi Taniguchi,
Kenji Watanabe,
Erez Berg,
Maksym Serbyn,
Andrea F. Young
Abstract:
Ferromagnetism is most common in transition metal compounds but may also arise in low-density two-dimensional electron systems, with signatures observed in silicon, III-V semiconductor systems, and graphene moiré heterostructures. Here we show that gate-tuned van Hove singularities in rhombohedral trilayer graphene drive the spontaneous ferromagnetic polarization of the electron system into one or…
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Ferromagnetism is most common in transition metal compounds but may also arise in low-density two-dimensional electron systems, with signatures observed in silicon, III-V semiconductor systems, and graphene moiré heterostructures. Here we show that gate-tuned van Hove singularities in rhombohedral trilayer graphene drive the spontaneous ferromagnetic polarization of the electron system into one or more spin- and valley flavors. Using capacitance measurements on graphite-gated van der Waals heterostructures, we find a cascade of density- and electronic displacement field tuned phase transitions marked by negative electronic compressibility. The transitions define the boundaries between phases where quantum oscillations have either four-fold, two-fold, or one-fold degeneracy, associated with a spin and valley degenerate normal metal, spin-polarized `half-metal', and spin and valley polarized `quarter metal', respectively. For electron do**, the salient features are well captured by a phenomenological Stoner model with a valley-anisotropic Hund's coupling, likely arising from interactions at the lattice scale. For hole filling, we observe a richer phase diagram featuring a delicate interplay of broken symmetries and transitions in the Fermi surface topology. Finally, by rotational alignment of a hexagonal boron nitride substrate to induce a moiré superlattice, we find that the superlattice perturbs the preexisting isospin order only weakly, leaving the basic phase diagram intact while catalyzing the formation of topologically nontrivial gapped states whenever itinerant half- or quarter metal states occur at half- or quarter superlattice band filling. Our results show that rhombohedral trilayer graphene is an ideal platform for well-controlled tests of many-body theory and reveal magnetism in moiré materials to be fundamentally itinerant in nature.
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Submitted 14 June, 2021; v1 submitted 1 April, 2021;
originally announced April 2021.
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Strong-Magnetic-Field Magnon Transport in Monolayer Graphene
Authors:
Haoxin Zhou,
Chunli Huang,
Nemin Wei,
Takashi Taniguchi,
Kenji Watanabe,
Michael P. Zaletel,
Zlatko Papić,
Allan H. MacDonald,
Andrea F. Young
Abstract:
At high magnetic fields, monolayer graphene hosts competing phases distinguished by their breaking of the approximate SU(4) isospin symmetry. Recent experiments have observed an even denominator fractional quantum Hall state thought to be associated with a transition in the underlying isospin order from a spin-singlet charge density wave at low magnetic fields to an antiferromagnet at high magneti…
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At high magnetic fields, monolayer graphene hosts competing phases distinguished by their breaking of the approximate SU(4) isospin symmetry. Recent experiments have observed an even denominator fractional quantum Hall state thought to be associated with a transition in the underlying isospin order from a spin-singlet charge density wave at low magnetic fields to an antiferromagnet at high magnetic fields, implying that a similar transition must occur at charge neutrality. However, this transition does not generate contrast in typical electrical transport or thermodynamic measurements and no direct evidence for it has been reported, despite theoretical interest arising from its potentially unconventional nature. Here, we measure the transmission of ferromagnetic magnons through the two dimensional bulk of clean monolayer graphene. Using spin polarized fractional quantum Hall states as a benchmark, we find that magnon transmission is controlled by the detailed properties of the low-momentum spin waves in the intervening Hall fluid, which is highly density dependent. Remarkably, as the system is driven into the antiferromagnetic regime, robust magnon transmission is restored across a wide range of filling factors consistent with Pauli blocking of fractional quantum hall spin-wave excitations and their replacement by conventional ferromagnetic magnons confined to the minority graphene sublattice. Finally, using devices in which spin waves are launched directly into the insulating charge-neutral bulk, we directly detect the hidden phase transition between bulk insulating charge density wave and a canted antiferromagnetic phases at charge neutrality, completing the experimental map of broken-symmetry phases in monolayer graphene.
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Submitted 1 February, 2021;
originally announced February 2021.
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Current distribution in a slit connecting two graphene half-planes
Authors:
Sergey S. Pershoguba,
Andrea F. Young,
Leonid I. Glazman
Abstract:
We investigate the joint effect of viscous and Ohmic dissipation on electric current flow through a slit in a barrier dividing a graphene sheet in two. In the case of the no-slip boundary condition, we find that the competition between the viscous and Ohmic types of the charge flow results in the evolution of the current density profile from a concave to convex shape. We provide a detailed analysi…
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We investigate the joint effect of viscous and Ohmic dissipation on electric current flow through a slit in a barrier dividing a graphene sheet in two. In the case of the no-slip boundary condition, we find that the competition between the viscous and Ohmic types of the charge flow results in the evolution of the current density profile from a concave to convex shape. We provide a detailed analysis of the evolution and identify favorable conditions to observe it in experiment. In contrast, in the case of the no-stress boundary condition, there is no qualitative difference between the current profiles in the Ohmic and viscous limits. The dichotomy between the behavior corresponding to distinct boundary conditions could be tested experimentally.
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Submitted 4 September, 2020;
originally announced September 2020.
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Isospin Pomeranchuk effect and the entropy of collective excitations in twisted bilayer graphene
Authors:
Yu Saito,
Fangyuan Yang,
**gyuan Ge,
Xiaoxue Liu,
Kenji Watanabe,
Takashi Taniguchi,
J. I. A. Li,
Erez Berg,
Andrea F. Young
Abstract:
In condensed matter systems, higher temperatures typically disfavors ordered phases leading to an upper critical temperature for magnetism, superconductivity, and other phenomena. A notable exception is the Pomeranchuk effect in 3He, in which the liquid ground state freezes upon increasing the temperature due to the large entropy of the paramagnetic solid phase. Here we show that a similar mechani…
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In condensed matter systems, higher temperatures typically disfavors ordered phases leading to an upper critical temperature for magnetism, superconductivity, and other phenomena. A notable exception is the Pomeranchuk effect in 3He, in which the liquid ground state freezes upon increasing the temperature due to the large entropy of the paramagnetic solid phase. Here we show that a similar mechanism describes the finite temperature dynamics of spin and valley-isospins in magic-angle twisted bilayer graphene. Most strikingly a resistivity peak appears at high temperatures near superlattice filling factor nu = -1, despite no signs of a commensurate correlated phase appearing in the low-temperature limit. Tilted field magnetotransport and thermodynamic measurements of the inplane magnetic moment show that the resistivity peak is adiabatically connected to a finite-field magnetic phase transition at which the system develops finite isospin polarization. These data are suggestive of a Pomeranchuk-type mechanism, in which the entropy of disordered isospin moments in the ferromagnetic phase stabilizes it relative to an isospin unpolarized Fermi liquid phase at elevated temperatures. Measurements of the entropy, S/kB indeed find it to be of order unity per unit cell area, with a measurable fraction that is suppressed by an in-plane magnetic field consistent with a contribution from disordered physical spins. In contrast to 3He, however, no discontinuities are observed in the thermodynamic quantities across this transition. Our findings imply a small isospin stiffness, with implications for the nature of finite temperature transport as well as the mechanisms underlying isospin ordering and superconductivity in twisted bilayer graphene and related systems.
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Submitted 18 November, 2020; v1 submitted 25 August, 2020;
originally announced August 2020.
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Experimental determination of the energy per particle in partially filled Landau levels
Authors:
Fangyuan Yang,
Alexander A. Zibrov,
Ruiheng Bai,
Takashi Taniguchi,
Kenji Watanabe,
Michael P. Zaletel,
Andrea F. Young
Abstract:
We describe an experimental technique to measure the chemical potential, $μ$, in atomically thin layered materials with high sensitivity and in the static limit. We apply the technique to a high quality graphene monolayer to map out the evolution of $μ$ with carrier density throughout the N=0 and N=1 Landau levels at high magnetic field. By integrating $μ$ over filling factor, $ν$, we obtain the g…
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We describe an experimental technique to measure the chemical potential, $μ$, in atomically thin layered materials with high sensitivity and in the static limit. We apply the technique to a high quality graphene monolayer to map out the evolution of $μ$ with carrier density throughout the N=0 and N=1 Landau levels at high magnetic field. By integrating $μ$ over filling factor, $ν$, we obtain the ground state energy per particle, which can be directly compared with numerical calculations. In the N=0 Landau level, our data show exceptional agreement with numerical calculations over the whole Landau level without adjustable parameters, as long as the screening of the Coulomb interaction by the filled Landau levels is accounted for. In the N=1 Landau level, comparison between experimental and numerical data reveals the importance of valley anisotropic interactions and the presence of valley-textured electron solids near odd filling.
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Submitted 12 August, 2020;
originally announced August 2020.
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Hofstadter subband ferromagnetism and symmetry broken Chern insulators in twisted bilayer graphene
Authors:
Yu Saito,
**gyuan Ge,
Louk Rademaker,
Kenji Watanabe,
Takashi Taniguchi,
Dmitry A. Abanin,
Andrea F. Young
Abstract:
In bilayer graphene rotationally faulted to theta=1.1 degrees, interlayer tunneling and rotational misalignment conspire to create a pair of low energy flat band that have been found to host various correlated phenomena at partial filling. Most work to date has focused on the zero magnetic field phase diagram, with magnetic field (B) used as a probe of the B=0 band structure. Here, we show that tw…
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In bilayer graphene rotationally faulted to theta=1.1 degrees, interlayer tunneling and rotational misalignment conspire to create a pair of low energy flat band that have been found to host various correlated phenomena at partial filling. Most work to date has focused on the zero magnetic field phase diagram, with magnetic field (B) used as a probe of the B=0 band structure. Here, we show that twisted bilayer graphene (tBLG) in a B as low as 2T hosts a cascade of ferromagnetic Chern insulators with Chern number |C|=1,2 and 3. We argue that the emergence of the Chern insulators is driven by the interplay of the moire superlattice with the B, which endow the flat bands with a substructure of topologically nontrivial subbands characteristic of the Hofstadter butterfly. The new phases can be accounted for in a Stoner picture in which exchange interactions favor polarization into one or more spin- and valley-isospin flavors; in contrast to conventional quantum Hall ferromagnets, however, electrons polarize into between one and four copies of a single Hofstadter subband with Chern number C=-1. In the case of the C=\pm3 insulators in particular, B catalyzes a first order phase transition from the spin- and valley-unpolarized B=0 state into the ferromagnetic state. Distinct from other moire heterostructures, tBLG realizes the strong-lattice limit of the Hofstadter problem and hosts Coulomb interactions that are comparable to the full bandwidth W and are consequently much stronger than the width of the individual Hofstadter subbands. In our experimental data, the dominance of Coulomb interactions manifests through the appearance of Chern insulating states with spontaneously broken superlattice symmetry at half filling of a C=-2 subband. Our experiments show that that tBLG may be an ideal venue to explore the strong interaction limit within partially filled Hofstadter bands.
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Submitted 28 August, 2020; v1 submitted 12 July, 2020;
originally announced July 2020.
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Imaging orbital ferromagnetism in a moiré Chern insulator
Authors:
C. L. Tschirhart,
M. Serlin,
H. Polshyn,
A. Shragai,
Z. Xia,
J. Zhu,
Y. Zhang,
K. Watanabe,
T. Taniguchi,
M. E. Huber,
A. F. Young
Abstract:
Electrons in moiré flat band systems can spontaneously break time reversal symmetry, giving rise to a quantized anomalous Hall effect. Here we use a superconducting quantum interference device to image stray magnetic fields in one such system composed of twisted bilayer graphene aligned to hexagonal boron nitride. We find a magnetization of several Bohr magnetons per charge carrier, demonstrating…
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Electrons in moiré flat band systems can spontaneously break time reversal symmetry, giving rise to a quantized anomalous Hall effect. Here we use a superconducting quantum interference device to image stray magnetic fields in one such system composed of twisted bilayer graphene aligned to hexagonal boron nitride. We find a magnetization of several Bohr magnetons per charge carrier, demonstrating that the magnetism is primarily orbital in nature. Our measurements reveal a large change in the magnetization as the chemical potential is swept across the quantum anomalous Hall gap consistent with the expected contribution of chiral edge states to the magnetization of an orbital Chern insulator. Map** the spatial evolution of field-driven magnetic reversal, we find a series of reproducible micron scale domains whose boundaries host chiral edge states.
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Submitted 14 June, 2020;
originally announced June 2020.
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Electrical switching of magnetic order in an orbital Chern insulator
Authors:
Hryhoriy Polshyn,
Jihang Zhu,
Manish A. Kumar,
Yuxuan Zhang,
Fangyuan Yang,
Charles L. Tschirhart,
Marec Serlin,
Kenji Watanabe,
Takashi Taniguchi,
Allan H. MacDonald,
Andrea F. Young
Abstract:
Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding technological goal in spintronics and multiferroics---can be achieved only indirectly. Here, we experimentally demonstrate direct electric field control of magne…
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Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding technological goal in spintronics and multiferroics---can be achieved only indirectly. Here, we experimentally demonstrate direct electric field control of magnetic states in an orbital Chern insulator, a magnetic system in which non-trivial band topology favors long range order of orbital angular momentum but the spins are thought to remain disordered. We use van der Waals heterostructures consisting of a graphene monolayer rotationally faulted with respect to a Bernal-stacked bilayer to realize narrow and topologically nontrivial valley-projected moiré minibands. At fillings of one and three electrons per moiré unit cell within these bands, we observe quantized anomalous Hall effects with transverse resistance approximately equal to $h/2e^2$, which is indicative of spontaneous polarization of the system into a single-valley-projected band with a Chern number equal to two. At a filling of three electrons per moiré unit cell, we find that the sign of the quantum anomalous Hall effect can be reversed via field-effect control of the chemical potential; moreover, this transition is hysteretic, which we use to demonstrate nonvolatile electric field induced reversal of the magnetic state. A theoretical analysis indicates that the effect arises from the topological edge states, which drive a change in sign of the magnetization and thus a reversal in the favored magnetic state. Voltage control of magnetic states can be used to electrically pattern nonvolatile magnetic domain structures hosting chiral edge states, with applications ranging from reconfigurable microwave circuit elements to ultralow power magnetic memory.
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Submitted 23 November, 2020; v1 submitted 23 April, 2020;
originally announced April 2020.
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On-chip terahertz modulation and emission with integrated graphene junctions
Authors:
Joshua O. Island,
Peter Kissin,
Jacob Schalch,
Xiaomeng Cui,
Sheikh Rubaiat Ul Haque,
Alex Potts,
Takashi Taniguchi,
Kenji Watanabe,
Richard D. Averitt,
Andrea F. Young
Abstract:
The efficient modulation and control of ultrafast signals on-chip is of central importance in terahertz (THz) communications and a promising route toward sub-diffraction limit THz spectroscopy. Two-dimensional (2D) materials may provide a platform for these endeavors. We explore this potential, integrating high-quality graphene p-n junctions within two types of planar transmission line circuits to…
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The efficient modulation and control of ultrafast signals on-chip is of central importance in terahertz (THz) communications and a promising route toward sub-diffraction limit THz spectroscopy. Two-dimensional (2D) materials may provide a platform for these endeavors. We explore this potential, integrating high-quality graphene p-n junctions within two types of planar transmission line circuits to modulate and emit picosecond pulses. In a coplanar stripline geometry, we demonstrate electrical modulation of THz signal transmission by 95%. In a Goubau waveguide geometry, we achieve complete gate-tunable control over THz emission from a photoexcited graphene junction. These studies inform the development of on-chip signal manipulation and highlight prospects for 2D materials in THz applications.
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Submitted 4 April, 2020;
originally announced April 2020.
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Imaging the breakdown of ohmic transport in graphene
Authors:
A. Jenkins,
S. Baumann,
H. Zhou,
S. A. Meynell,
D. Yang,
K. Watanabe,
T. Taniguchi,
A. Lucas,
A. F. Young,
A. C. Bleszynski Jayich
Abstract:
Ohm's law describes the proportionality of current density and electric field. In solid-state conductors, Ohm's law emerges due to electron scattering processes that relax the electrical current. Here, we use nitrogen-vacancy center magnetometry to directly image the local breakdown of Ohm's law in a narrow constriction fabricated in a high mobility graphene monolayer. Ohmic flow is visible at roo…
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Ohm's law describes the proportionality of current density and electric field. In solid-state conductors, Ohm's law emerges due to electron scattering processes that relax the electrical current. Here, we use nitrogen-vacancy center magnetometry to directly image the local breakdown of Ohm's law in a narrow constriction fabricated in a high mobility graphene monolayer. Ohmic flow is visible at room temperature as current concentration on the constriction edges, with flow profiles entirely determined by sample geometry. However, as the temperature is lowered below 200 K, the current concentrates near the constriction center. The change in the flow pattern is consistent with a crossover from diffusive to viscous electron transport dominated by electron-electron scattering processes that do not relax current.
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Submitted 12 March, 2020; v1 submitted 12 February, 2020;
originally announced February 2020.
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Linear magneto-electric phase in ultrathin MnPS$_{3}$ probed by optical second harmonic generation
Authors:
H. Chu,
C. J. Roh,
J. O. Island,
C. Li,
S. Lee,
J. Chen,
J. G. Park,
A. F. Young,
J. S. Lee,
D. Hsieh
Abstract:
The transition metal thiophosphates $M$PS$_3$ ($M$ = Mn, Fe, Ni) are a class of van der Waals stacked insulating antiferromagnets that can be exfoliated down to the ultrathin limit. MnPS$_3$ is particularly interesting because its N$\acute{\textrm{e}}$el ordered state breaks both spatial-inversion and time-reversal symmetries, allowing for a linear magneto-electric phase that is rare among van der…
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The transition metal thiophosphates $M$PS$_3$ ($M$ = Mn, Fe, Ni) are a class of van der Waals stacked insulating antiferromagnets that can be exfoliated down to the ultrathin limit. MnPS$_3$ is particularly interesting because its N$\acute{\textrm{e}}$el ordered state breaks both spatial-inversion and time-reversal symmetries, allowing for a linear magneto-electric phase that is rare among van der Waals materials. However, it is unknown whether this unique magnetic structure of bulk MnPS$_3$ remains stable in the ultrathin limit. Using optical second harmonic generation rotational anisotropy, we show that long-range linear magneto-electric type N$\acute{\textrm{e}}$el order in MnPS$_3$ persists down to at least 5.3 nm thickness. However an unusual mirror symmetry breaking develops in ultrathin samples on SiO$_2$ substrates that is absent in bulk materials, which is likely related to substrate induced strain.
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Submitted 20 January, 2020;
originally announced January 2020.
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Decoupling superconductivity and correlated insulators in twisted bilayer graphene
Authors:
Yu Saito,
**gyuan Ge,
Kenji Watanabe,
Takashi Taniguchi,
Andrea F. Young
Abstract:
When bilayer graphene is rotationally faulted to an angle $θ\approx 1.1^\circ$, theory predicts the formation of a flat electronic band and correlated insulating, superconducting, and ferromagnetic states have all been observed at partial band filling. The proximity of superconductivity to correlated insulators has suggested a close relationship between these states, reminiscent of the cuprates wh…
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When bilayer graphene is rotationally faulted to an angle $θ\approx 1.1^\circ$, theory predicts the formation of a flat electronic band and correlated insulating, superconducting, and ferromagnetic states have all been observed at partial band filling. The proximity of superconductivity to correlated insulators has suggested a close relationship between these states, reminiscent of the cuprates where superconductivity arises by do** a Mott insulator. Here, we show that superconductivity can appear without correlated insulating states. While both superconductivity and correlated insulating behavior are strongest near the flat band condition, superconductivity survives to larger detuning of the angle. Our observations are consistent with a "competing phases" picture, in which insulators and superconductivity arise from disparate mechanisms.
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Submitted 2 December, 2019; v1 submitted 29 November, 2019;
originally announced November 2019.
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Intrinsic quantized anomalous Hall effect in a moiré heterostructure
Authors:
M. Serlin,
C. L. Tschirhart,
H. Polshyn,
Y. Zhang,
J. Zhu,
K. Watanabe,
T. Taniguchi,
L. Balents,
A. F. Young
Abstract:
We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moiré miniband with Chern number $C=1$. In contrast to extrinsic, magneti…
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We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moiré miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Δ/k_B\approx 27$~K is larger than the Curie temperature for magnetic ordering $T_C\approx 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.
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Submitted 29 June, 2019;
originally announced July 2019.
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Skyrmion solids in monolayer graphene
Authors:
Haoxin Zhou,
Hryhoriy Polshyn,
Takashi Taniguchi,
Kenji Watanabe,
Andrea F. Young
Abstract:
Partially filled Landau levels host competing orders, with electron solids prevailing close to integer fillings before giving way to fractional quantum Hall liquids as the Landau level fills. Here, we report the observation of an electron solid with noncolinear spin texture in monolayer graphene, consistent with solidification of skyrmions---topological spin textures characterized by quantized ele…
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Partially filled Landau levels host competing orders, with electron solids prevailing close to integer fillings before giving way to fractional quantum Hall liquids as the Landau level fills. Here, we report the observation of an electron solid with noncolinear spin texture in monolayer graphene, consistent with solidification of skyrmions---topological spin textures characterized by quantized electrical charge. In electrical transport, electron solids reveal themselves through a rapid metal-insulator transition in the bulk electrical conductivity as the temperature is lowered, accompanied by the emergence of strongly nonlinear dependence on the applied bias voltage. We probe the spin texture of the solids using a modified Corbino geometry that allows ferromagnetic magnons to be launched and detected. We find that magnon transport is highly efficient when one Landau level is filled ($ν=1$), consistent with quantum Hall ferromagnetic spin polarization; however, even minimal do** immediately quenches the the magnon signal while leaving the vanishing low-temperature charge conductivity unchanged. Our results can be understood by the formation of a solid of charged skyrmions near $ν=1$, whose noncolinear spin texture leads to rapid magnon decay. Data near fractional fillings further shows evidence for several fractional skyrmion crystals, suggesting that graphene hosts a vast and highly tunable landscape of coupled spin and charge orders.
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Submitted 25 April, 2019;
originally announced April 2019.
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Phonon scattering dominated electron transport in twisted bilayer graphene
Authors:
H. Polshyn,
M. Yankowitz,
S. Chen,
Y. Zhang,
K. Watanabe,
T. Taniguchi,
C. R. Dean,
A. F. Young
Abstract:
Twisted bilayer graphene (tBLG) has recently emerged as a platform for hosting correlated phenomena, owing to the exceptionally flat band dispersion that results near interlayer twist angle $θ\approx1.1^\circ$. At low temperature a variety of phases are observed that appear to be driven by electron interactions including insulating states, superconductivity, and magnetism. Electrical transport in…
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Twisted bilayer graphene (tBLG) has recently emerged as a platform for hosting correlated phenomena, owing to the exceptionally flat band dispersion that results near interlayer twist angle $θ\approx1.1^\circ$. At low temperature a variety of phases are observed that appear to be driven by electron interactions including insulating states, superconductivity, and magnetism. Electrical transport in the high temperature regime has received less attention but is also highly anomalous, exhibiting gigantic resistance enhancement and non-monotonic temperature dependence. Here we report on the evolution of the scattering mechanisms in tBLG over a wide range of temperature and for twist angle varying from 0.75$^\circ$ - 2$^\circ$. We find that the resistivity, $ρ$, exhibits three distinct phenomenological regimes as a function of temperature, $T$. At low $T$ the response is dominated by correlation and disorder physics; at high $T$ by thermal activation to higher moiré subbands; and at intermediate temperatures $ρ$ varies linearly with $T$. The $T$-linear response is much larger than in monolayer graphenefor all measured twist angles, and increases by more than three orders of magnitude for $θ$ near the flat-band condition. Our results point to the dominant role of electron-phonon scattering in twisted layer systems, with possible implications for the origin of the observed superconductivity.
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Submitted 2 February, 2019;
originally announced February 2019.
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Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
Authors:
J. O. Island,
X. Cui,
C. Lewandowski,
J. Y. Khoo,
E. M. Spanton,
H. Zhou,
D. Rhodes,
J. C. Hone,
T. Taniguchi,
K. Watanabe,
L. S. Levitov,
M. P. Zaletel,
A. F. Young
Abstract:
Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene has precluded experimental observation. Here, we exploit a layer-selective proximity effect---achieved via van der Waals contact to a semiconducting tran…
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Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene has precluded experimental observation. Here, we exploit a layer-selective proximity effect---achieved via van der Waals contact to a semiconducting transition metal dichalcogenide--to engineer Kane-Mele SOC in ultra-clean \textit{bilayer} graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct incompressible, gapped phase at charge neutrality. The experimental data agrees quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane-Mele SOC in monolayer graphene, the inverted phase is not expected to be a time reversal invariant topological insulator, despite being separated from conventional band insulators by electric field tuned phase transitions where crystal symmetry mandates that the bulk gap must close. Electrical transport measurements, conspicuously, reveal that the inverted phase has a conductivity $\sim e^2/h$, which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inversted phase, that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin-orbit regime in graphene heterostructures.
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Submitted 8 January, 2019; v1 submitted 4 January, 2019;
originally announced January 2019.
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Fractional Chern insulator edges and layer-resolved lattice contacts
Authors:
Christina Knapp,
Eric M. Spanton,
Andrea F. Young,
Chetan Nayak,
Michael P. Zaletel
Abstract:
Fractional Chern insulators (FCIs) realized in fractional quantum Hall systems subject to a periodic potential are topological phases of matter for which space group symmetries play an important role. In particular, lattice dislocations in an FCI can host topology-altering non-Abelian topological defects, known as genons. Genons are of particular interest for their potential application to topolog…
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Fractional Chern insulators (FCIs) realized in fractional quantum Hall systems subject to a periodic potential are topological phases of matter for which space group symmetries play an important role. In particular, lattice dislocations in an FCI can host topology-altering non-Abelian topological defects, known as genons. Genons are of particular interest for their potential application to topological quantum computing. In this work, we study FCI edges and how they can be used to detect genons. We find that translation symmetry can impose a quantized momentum difference between the edge electrons of a partially-filled Chern band. We propose {\it layer-resolved lattice contacts}, which utilize this momentum difference to selectively contact a particular FCI edge electron. The relative current between FCI edge electrons can then be used to detect the presence of genons in the bulk FCI. Recent experiments have demonstrated graphene is a viable platform to study FCI physics. We describe how the lattice contacts proposed here could be implemented in graphene subject to an artificial lattice, thereby outlining a path forward for experimental dectection of non-Abelian topological defects.
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Submitted 12 November, 2018; v1 submitted 4 October, 2018;
originally announced October 2018.
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Tuning superconductivity in twisted bilayer graphene
Authors:
Matthew Yankowitz,
Shaowen Chen,
Hryhoriy Polshyn,
K. Watanabe,
T. Taniguchi,
David Graf,
Andrea F. Young,
Cory R. Dean
Abstract:
Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$, resulting in the appearance of gate-tunable superconducting and correlated insulating phases. Here, we demonstrate that in addition to the twist angle, the interlayer…
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Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$, resulting in the appearance of gate-tunable superconducting and correlated insulating phases. Here, we demonstrate that in addition to the twist angle, the interlayer coupling can also be modified to precisely tune these phases. We establish the capability to induce superconductivity at a twist angle larger than 1.1$^{\circ}$ $-$ in which correlated phases are otherwise absent $-$ by varying the interlayer spacing with hydrostatic pressure. Realizing devices with low disorder additionally reveals new details about the superconducting phase diagram and its relationship to the nearby insulator. Our results demonstrate twisted bilayer graphene to be a uniquely tunable platform for exploring novel correlated states.
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Submitted 24 August, 2018; v1 submitted 23 August, 2018;
originally announced August 2018.
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Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices
Authors:
Hryhoriy Polshyn,
Haoxin Zhou,
Eric. M. Spanton,
Takashi Taniguchi,
Kenji Watanabe,
Andrea F. Young
Abstract:
Owing to their wide tunability, spin- and valley internal degrees of freedom, and low disorder, graphene heterostructures are emerging as a promising experimental platform for fractional quantum Hall (FQH) studies. Surprisingly, however, transport measurements reveal many fewer FQH states than bulk capacitive probes. Here, we report the fabrication of dual graphite-gated monolayer graphene devices…
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Owing to their wide tunability, spin- and valley internal degrees of freedom, and low disorder, graphene heterostructures are emerging as a promising experimental platform for fractional quantum Hall (FQH) studies. Surprisingly, however, transport measurements reveal many fewer FQH states than bulk capacitive probes. Here, we report the fabrication of dual graphite-gated monolayer graphene devices in an edgeless Corbino-type geometry that showing deep FQH sequences. Thermal activation gaps reveal a tunable crossover between single- and multi-component FQH states in the zero energy Landau level, while the first Landau level is found to host an unexpected valley-ordered state at $ν=-4$.
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Submitted 5 September, 2018; v1 submitted 10 May, 2018;
originally announced May 2018.
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Emergent Dirac gullies and gully-symmetry breaking quantum Hall states in ABA trilayer graphene
Authors:
Alexander A. Zibrov,
Rao Peng,
Carlos Kometter,
Eric M. Spanton,
J. I. A. Li,
Cory R. Dean,
Takashi Taniguchi,
Kenji Watanabe,
Maksym Serbyn,
Andrea F. Young
Abstract:
We report on quantum capacitance measurements of high quality, graphite- and hexagonal boron nitride encapsulated Bernal stacked trilayer graphene devices. At zero applied magnetic field, we observe a number of electron density- and electrical displacement-tuned features in the electronic compressibility associated with changes in Fermi surface topology. At high displacement field and low density,…
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We report on quantum capacitance measurements of high quality, graphite- and hexagonal boron nitride encapsulated Bernal stacked trilayer graphene devices. At zero applied magnetic field, we observe a number of electron density- and electrical displacement-tuned features in the electronic compressibility associated with changes in Fermi surface topology. At high displacement field and low density, strong trigonal war** gives rise to emergent Dirac gullies centered near the corners of the hexagonal Brillouin and related by three fold rotation symmetry. At low magnetic fields of $B=1.25$~T, the gullies manifest as a change in the degeneracy of the Landau levels from two to three. Weak incompressible states are also observed at integer filling within these triplets Landau levels, which a Hartree-Fock analysis indicates are associated with Coulomb-driven nematic phases that spontaneously break rotation symmetry.
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Submitted 19 July, 2018; v1 submitted 2 May, 2018;
originally announced May 2018.
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Even denominator fractional quantum Hall states at an isospin transition in monolayer graphene
Authors:
A. A. Zibrov,
E. M. Spanton,
H. Zhou,
C. Kometter,
T. Taniguchi,
K. Watanabe,
A. F. Young
Abstract:
Magnetic fields quench the kinetic energy of two dimensional electrons, confining them to highly degenerate Landau levels. In the absence of disorder, the ground state at partial Landau level filling is determined only by Coulomb interactions, leading to a variety of correlation-driven phenomena. Here, we realize a quantum Hall analog of the Neél-to-valence bond solid transition within the spin- a…
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Magnetic fields quench the kinetic energy of two dimensional electrons, confining them to highly degenerate Landau levels. In the absence of disorder, the ground state at partial Landau level filling is determined only by Coulomb interactions, leading to a variety of correlation-driven phenomena. Here, we realize a quantum Hall analog of the Neél-to-valence bond solid transition within the spin- and sublattice- degenerate monolayer graphene zero energy Landau level by experimentally controlling substrate-induced sublattice symmetry breaking. The transition is marked by unusual isospin transitions in odd denominator fractional quantum Hall states for filling factors $ν$ near charge neutrality, and the unexpected appearance of incompressible even denominator fractional quantum Hall states at $ν=\pm1/2$ and $\pm1/4$ associated with pairing between composite fermions on different carbon sublattices.
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Submitted 12 December, 2017; v1 submitted 5 December, 2017;
originally announced December 2017.
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Observation of fractional Chern insulators in a van der Waals heterostructure
Authors:
Eric M. Spanton,
Alexander A. Zibrov,
Haoxin Zhou,
Takashi Taniguchi,
Kenji Watanabe,
Michael P. Zaletel,
Andrea F. Young
Abstract:
Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been proposed to arise more generally at fractional filling of topologically non-trivial "Chern" bands. Here, we report the observation of gapped states at fractional…
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Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been proposed to arise more generally at fractional filling of topologically non-trivial "Chern" bands. Here, we report the observation of gapped states at fractional filling of Harper-Hofstadter bands arising from the interplay of a magnetic field and a superlattice potential in a bilayer graphene/hexagonal boron nitride heterostructure. We observe new phases at fractional filling of bands with Chern indices $\mathcal{C} = -1, \pm 2,$ and $\pm 3$. Some of these, in $\mathcal{C}=-1$ and $\mathcal{C}=2$ bands, are characterized by fractional Hall conductance---they are `fractional Chern insulators' and constitute a new example of topological order beyond Landau levels.
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Submitted 27 November, 2017; v1 submitted 19 June, 2017;
originally announced June 2017.
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Robust fractional quantum Hall states and continuous quantum phase transitions in a half-filled bilayer graphene Landau level
Authors:
Alexander A. Zibrov,
Carlos. R. Kometter,
Haoxin Zhou,
Eric M. Spanton,
Takashi Taniguchi,
Kenji Watanabe,
Michael P. Zaletel,
Andrea F. Young
Abstract:
Nonabelian anyons offer the prospect of storing quantum information in a topological qubit protected from decoherence, with the degree of protection determined by the energy gap separating the topological vacuum from its low lying excitations. Originally proposed to occur in quantum wells in high magnetic fields, experimental systems thought to harbor nonabelian anyons range from p-wave superfluid…
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Nonabelian anyons offer the prospect of storing quantum information in a topological qubit protected from decoherence, with the degree of protection determined by the energy gap separating the topological vacuum from its low lying excitations. Originally proposed to occur in quantum wells in high magnetic fields, experimental systems thought to harbor nonabelian anyons range from p-wave superfluids to superconducting systems with strong spin orbit coupling. However, all of these systems are characterized by small energy gaps, and despite several decades of experimental work, definitive evidence for nonabelian anyons remains elusive. Here, we report the observation of arobust, incompressible even-denominator fractional quantum Hall phase in a new generation of dual-gated, hexagonal boron nitride encapsulated bilayer graphene samples. Numerical simulations suggest that this state is in the Pfaffian phase and hosts nonabelian anyons, and the measured energy gaps are several times larger than those observed in other systems. Moreover, the unique electronic structure of bilayer graphene endows the electron system with two new control parameters. Magnetic field continuously tunes the effective electron interactions, changing the even-denominator gap non-monotonically and consistent with predictions that a transition between the Pfaffian phase and the composite Fermi liquid (CFL) occurs just beyond the experimentally explored magnetic field range. Electric field, meanwhile, tunes crossings between levels from different valleys. By directly measuring the valley polarization, we observe a continuous transition from an incompressible to a compressible phase at half-filling mediated by an unexpected incompressible, yet polarizable, intermediate phase. Valley conservation implies this phase is an electrical insulator with gapless neutral excitations.
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Submitted 28 April, 2017; v1 submitted 21 November, 2016;
originally announced November 2016.
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Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system
Authors:
B. M. Hunt,
J. I. A. Li,
A. A. Zibrov,
L. Wang,
T. Taniguchi,
K. Watanabe,
J. Hone,
C. R. Dean,
M. Zaletel,
R. C. Ashoori,
A. F. Young
Abstract:
Strongly interacting two dimensional electron systems (2DESs) host a complex landscape of broken symmetry states. The possible ground states are further expanded by internal degrees of freedom such as spin or valley-isospin. While direct probes of spin in 2DESs were demonstrated two decades ago, the valley quantum number has only been probed indirectly in semiconductor quantum wells, graphene mono…
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Strongly interacting two dimensional electron systems (2DESs) host a complex landscape of broken symmetry states. The possible ground states are further expanded by internal degrees of freedom such as spin or valley-isospin. While direct probes of spin in 2DESs were demonstrated two decades ago, the valley quantum number has only been probed indirectly in semiconductor quantum wells, graphene mono- and bilayers, and transition-metal dichalcogenides. Here, we present the first direct experimental measurement of valley polarization in a two dimensional electron system, effected via the direct map** of the valley quantum number onto the layer polarization in bilayer graphene at high magnetic fields. We find that the layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital polarization. Our data can be fit by a model that captures both single particle and interaction induced orbital, valley, and spin anisotropies, providing the most complete model of this complex system to date. Among the newly discovered phases are theoretically unanticipated orbitally polarized states stabilized by skew interlayer hop**. The resulting roadmap to symmetry breaking in bilayer graphene paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two dimensional materials where layer polarization maps to the valley or spin quantum numbers, providing an essential direct probe that is a prerequisite for manipulating these new quantum degrees of freedom.
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Submitted 1 June, 2017; v1 submitted 21 July, 2016;
originally announced July 2016.
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Observation of Helical Edge States and Fractional Quantum Hall Effect in a Graphene Electron-hole Bilayer
Authors:
J. D. Sanchez-Yamagishi,
J. Y. Luo,
A. F. Young,
B. Hunt,
K. Watanabe,
T. Taniguchi,
R. C. Ashoori,
P. Jarillo-Herrero
Abstract:
A quantum Hall edge state provides a rich foundation to study electrons in 1-dimension (1d) but is limited to chiral propagation along a single direction. Here, we demonstrate a versatile platform to realize new 1d systems made by combining quantum Hall edge states of opposite chiralities in a graphene electron-hole bilayer. Using this approach, we engineer helical 1d edge conductors where the cou…
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A quantum Hall edge state provides a rich foundation to study electrons in 1-dimension (1d) but is limited to chiral propagation along a single direction. Here, we demonstrate a versatile platform to realize new 1d systems made by combining quantum Hall edge states of opposite chiralities in a graphene electron-hole bilayer. Using this approach, we engineer helical 1d edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong nonlocal transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Moreover, we investigate these electron-hole bilayers in the fractional quantum Hall regime, where we observe conduction through fractional and integer edge states of opposite chiralities, paving the way towards the realization of 1d helical systems with fractional quantum statistics.
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Submitted 22 February, 2016;
originally announced February 2016.
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Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure
Authors:
Qiong Ma,
Trond I. Andersen,
Nityan L. Nair,
Nathaniel M. Gabor,
Mathieu Massicotte,
Chun Hung Lui,
Andrea F. Young,
Wen**g Fang,
Kenji Watanabe,
Takashi Taniguchi,
**g Kong,
Nuh Gedik,
Frank H. L. Koppens,
Pablo Jarillo-Herrero
Abstract:
Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipula…
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Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipulation of electron thermalization in nanoscale devices remains challenging even with the most advanced ultrafast laser techniques. Here, we overcome this challenge by leveraging the atomic thinness of two-dimensional van der Waals (vdW) materials in order to introduce a highly tunable electron transfer pathway that directly competes with electron thermalization. We realize this scheme in a graphene-boron nitride-graphene (G-BN-G) vdW heterostructure, through which optically excited carriers are transported from one graphene layer to the other. By applying an interlayer bias voltage or varying the excitation photon energy, interlayer carrier transport can be controlled to occur faster or slower than the intralayer scattering events, thus effectively tuning the electron thermalization pathways in graphene. Our findings, which demonstrate a novel means to probe and directly modulate electron energy transport in nanoscale materials, represent an important step toward designing and implementing novel optoelectronic and energy-harvesting devices with tailored microscopic properties.
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Submitted 10 January, 2016;
originally announced January 2016.
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Visualization of superparamagnetic dynamics in magnetic topological insulators
Authors:
E. Lachman,
A. F. Young,
A. Richardella,
J. Cuppens,
Naren HR,
Y. Anahory,
A. Y. Meltzer,
A. Kandala,
S. Kem**er,
Y. Myasoedov,
M. E. Huber,
N. Samarth,
E. Zeldov
Abstract:
Quantized Hall conductance is a generic feature of two dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is believed to be broken by long-range ferromagnetic order, with quantized resistance observed even at zero external magnetic field. Here, we use scanning nanoSQUI…
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Quantized Hall conductance is a generic feature of two dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is believed to be broken by long-range ferromagnetic order, with quantized resistance observed even at zero external magnetic field. Here, we use scanning nanoSQUID magnetic imaging to provide a direct visualization of the dynamics of the quantum phase transition between the two anomalous Hall plateaus in a Cr-doped (Bi,Sb)$_2$Te$_3$ thin film. Contrary to naive expectations based upon macroscopic magnetometry, our measurements reveal a superparamagnetic state formed by weakly interacting magnetic domains with a characteristic size of few tens of nanometers. The magnetic phase transition occurs through random reversals of these local moments, which drive the electronic Hall plateau transition. Surprisingly, we find that the electronic system can in turn drive the dynamics of the magnetic system, revealing a subtle interplay between the two coupled quantum phase transitions.
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Submitted 16 June, 2015;
originally announced June 2015.
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Torque magnetometry of an amorphous-alumina/strontium-titanate interface
Authors:
S. L. Tomarken,
A. F. Young,
S. W. Lee,
R. G. Gordon,
R. C. Ashoori
Abstract:
We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al$_2$O$_3$ thin film grown on a crystalline SrTiO$_3$ substrate ($a$-AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the…
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We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al$_2$O$_3$ thin film grown on a crystalline SrTiO$_3$ substrate ($a$-AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the interface. Unlike crystalline LAO, amorphous Al$_2$O$_3$ is nonpolar, indicating that planar magnetism at an oxide interface is possible without the strong internal electric fields generated within the polarization catastrophe model. We discuss our results in the context of current theoretical efforts to explain magnetism in crystalline LAO/STO.
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Submitted 3 December, 2014; v1 submitted 10 September, 2014;
originally announced September 2014.
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Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
Authors:
A. F. Young,
J. D. Sanchez-Yamagishi,
B. Hunt,
S. H. Choi,
K. Watanabe,
T. Taniguchi,
R. C. Ashoori,
P. Jarillo-Herrero
Abstract:
Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a new paradigm has emerged with the advent of symmetry-protected surface states on the boundary of topological insulators, enabling the creation of electronic sys…
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Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a new paradigm has emerged with the advent of symmetry-protected surface states on the boundary of topological insulators, enabling the creation of electronic systems with novel properties. For example, time reversal symmetry (TRS) endows the massless charge carriers on the surface of a three-dimensional topological insulator with helicity, locking the orientation of their spin relative to their momentum. Weakly breaking this symmetry generates a gap on the surface, resulting in charge carriers with finite effective mass and exotic spin textures. Analogous manipulations of the one-dimensional boundary states of a two-dimensional topological insulator are also possible, but have yet to be observed in the leading candidate materials. Here, we demonstrate experimentally that charge neutral monolayer graphene displays a new type of quantum spin Hall (QSH) effect, previously thought to exist only in TRS topological insulators, when it is subjected to a very large magnetic field angled with respect to the graphene plane. Unlike in the TRS case, the QSH presented here is protected by a spin-rotation symmetry that emerges as electron spins in a half-filled Landau level are polarized by the large in-plane magnetic field. The properties of the resulting helical edge states can be modulated by balancing the applied field against an intrinsic antiferromagnetic instability, which tends to spontaneously break the spin-rotation symmetry. In the resulting canted antiferromagnetic (CAF) state, we observe transport signatures of gapped edge states, which constitute a new kind of one-dimensional electronic system with tunable band gap and associated spin-texture.
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Submitted 18 July, 2013;
originally announced July 2013.
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Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
Authors:
B. Hunt,
J. D. Sanchez-Yamagishi,
A. F. Young,
K. Watanabe,
T. Taniguchi,
P. Moon,
M. Koshino,
P. Jarillo-Herrero,
R. C. Ashoori
Abstract:
Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally-aligned hexagonal boron nitride substrate. The spatially-varying interlayer atomic registry results both in a local breaking…
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Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally-aligned hexagonal boron nitride substrate. The spatially-varying interlayer atomic registry results both in a local breaking of the carbon sublattice symmetry and a long-range moiré superlattice potential in the graphene. This interplay between short- and long-wavelength effects results in a band structure described by isolated superlattice minibands and an unexpectedly large band gap at charge neutrality, both of which can be tuned by varying the interlayer alignment. Magnetocapacitance measurements reveal previously unobserved fractional quantum Hall states reflecting the massive Dirac dispersion that results from broken sublattice symmetry. At ultra-high fields, integer conductance plateaus are observed at non-integer filling factors due to the emergence of the Hofstadter butterfly in a symmetry-broken Landau level.
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Submitted 27 March, 2013;
originally announced March 2013.
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Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
Authors:
Patrick Maher,
Cory R. Dean,
Andrea F. Young,
Takashi Taniguchi,
Kenji Watanabe,
Kenneth L. Shepard,
James Hone,
Philip Kim
Abstract:
The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at ν=0 in bilayer graphene…
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The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at ν=0 in bilayer graphene if the ground state is a spin ferromagnet. Previous studies have demonstrated that the bilayer ν=0 state is an insulator in a perpendicular magnetic field, though the exact nature of this state has not been identified. Here we present measurements of the ν=0 state in a dual-gated bilayer graphene device in tilted magnetic field. The application of an in-plane magnetic field and perpendicular electric field allows us to map out a full phase diagram of the ν=0 state as a function of experimentally tunable parameters. At large in-plane magnetic field we observe a quantum phase transition to a metallic state with conductance of order 4e^2/h, consistent with predictions for the ferromagnet.
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Submitted 16 February, 2013; v1 submitted 16 December, 2012;
originally announced December 2012.