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Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal
Authors:
Masato Takiguchi,
Atsushi Yokoo,
Kengo Nozaki,
Muhammad Danang Birowosuto,
Kouta Tateno,
Guoqiang Zhang,
Eiichi Kuramochi,
Akihiko Shinya,
Masaya Notomi
Abstract:
We demonstrated sub-wavelength (~111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pum** at cryogenic temperatures. To estimate the small signal response and pseudo-random bit sequence (PRBS) modulation of our CW lasers, we employed a new signal detection technique that employs a supercon…
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We demonstrated sub-wavelength (~111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pum** at cryogenic temperatures. To estimate the small signal response and pseudo-random bit sequence (PRBS) modulation of our CW lasers, we employed a new signal detection technique that employs a superconducting single photon detector and a time-correlated single photon counting module. The results showed that our NW laser was unambiguously modulated at above 10 Gb/s and an open eye pattern was obtained. This is the first demonstration of a telecom-band CW NW laser with high-speed PRBS modulation.
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Submitted 8 February, 2017; v1 submitted 12 December, 2016;
originally announced December 2016.
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Spontaneous emission inhibition of telecom-band quantum disks inside single nanowire on different substrates
Authors:
M. D. Birowosuto,
G. Zhang,
A. Yokoo,
M. Takiguchi,
M. Notomi
Abstract:
We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO2), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the high-…
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We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO2), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the high-refractive index materials of Si. Experimentally, the inhibition factor $ζ$ of the Qdisk emission at 1,500 nm decreases from 4.6 to 2.5 for NW on SiO2 and Si substrates, respectively. Those inhibitions are even much smaller than that of 6.4 of the standing NW. The inhibition factors well agree with those calculated from the coupling of the Qdisk to the fundamental guided mode and the continuum of radiative modes. Our observation can be useful for the integration of the NW as light sources in the photonic nanodevices.
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Submitted 30 May, 2014;
originally announced June 2014.
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Movable high Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform
Authors:
M. D. Birowosuto,
A. Yokoo,
G. Zhang,
K. Tateno,
E. Kuramochi,
H. Taniyama,
M. Takiguchi,
M. Notomi
Abstract:
Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light confinement or efficient coupling with photonic circuits is not straightforward and remains a challenge. Here we show that a high Q nanocavity can be created by pla…
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Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light confinement or efficient coupling with photonic circuits is not straightforward and remains a challenge. Here we show that a high Q nanocavity can be created by placing a single III/V semiconductor nanowire with a diameter of under 100 nm in a grooved waveguide in a Si photonic crystal, by means of nanoprobe manipulation. We observe very fast spontaneous emission (91 ps) from nanowires accelerated by the strong Purcell enhancement in nanocavities, which proves that very strong light confinement can be achieved. Furthermore, this system enables us to move the nanocavity anywhere along the waveguide. This configuration provides a significant degree of flexibility in integrated photonics and permits the addition and displacement of various functionalities of III/V nanocavity devices in Si photonic circuits.
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Submitted 17 March, 2014;
originally announced March 2014.
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Fabrication of whispering gallery mode cavity using crystal growth
Authors:
Hiroshi Kudo,
Yohei Ogawa,
Takumi Kato,
Atsushi Yokoo,
Takasumi Tanabe
Abstract:
We developed a new method for fabricating crystalline whispering gallery mode cavities based on laser-heated pedestal growth. We fabricated sapphire cavities and obtained a Q factor of 16000 with a cavity whose diameter was about 240 um. We showed numerically that the cross-sectional shape of the cavity is sensitive to the cavity Q, and we controlled it successfully by changing the growth conditio…
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We developed a new method for fabricating crystalline whispering gallery mode cavities based on laser-heated pedestal growth. We fabricated sapphire cavities and obtained a Q factor of 16000 with a cavity whose diameter was about 240 um. We showed numerically that the cross-sectional shape of the cavity is sensitive to the cavity Q, and we controlled it successfully by changing the growth condition in the molten zone, without significantly degrading the crystal structure.
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Submitted 22 February, 2013;
originally announced February 2013.
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Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in 2D photonic crystals
Authors:
M. D. Birowosuto,
A. Yokoo,
H. Taniyama,
E. Kuramochi,
M. Takiguchi,
M. Notomi
Abstract:
Using Finite-Difference Time-Domain (FDTD) simulation, we show that ultrahigh- Q nanocavities can be obtained through the manipulation of a single semiconductor nanowire (NW) inside a slot in a line defect of a two-dimensional (2D) photonic crystal. By controlling the design and its lattice parameters of the photonic crystal, we have achieved a quality factor Q larger than 106 and a mode volume Vc…
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Using Finite-Difference Time-Domain (FDTD) simulation, we show that ultrahigh- Q nanocavities can be obtained through the manipulation of a single semiconductor nanowire (NW) inside a slot in a line defect of a two-dimensional (2D) photonic crystal. By controlling the design and its lattice parameters of the photonic crystal, we have achieved a quality factor Q larger than 106 and a mode volume Vc smaller than 0.11 μm3 (1.25 of a cubic wavelength in the NW) for a cavity peak in the telecommunication band. This design is useful for realizing a position-controlled cavity in a photonic crystal. Here we also discuss the small dependence of the Qfactor, the Vc, and the cavity peak in relation to the position of the NWinside the slot and the potential application to the cavity quantum electrodynamics (QED) using the embedded-emitter NW.
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Submitted 13 November, 2012;
originally announced November 2012.
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Toward an MT System without Pre-Editing --- Effects of New Methods in ALT-J/E ---
Authors:
Satoru Ikehara,
Satoshi Shirai,
Akio Yokoo,
Hiromi Nakaiwa
Abstract:
Recently, several types of Japanese-to-English machine translation systems have been developed, but all of them require an initial process of rewriting the original text into easily translatable Japanese. Therefore these systems are unsuitable for translating information that needs to be speedily disseminated. To overcome this limitation, a Multi-Level Translation Method based on the Constructiv…
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Recently, several types of Japanese-to-English machine translation systems have been developed, but all of them require an initial process of rewriting the original text into easily translatable Japanese. Therefore these systems are unsuitable for translating information that needs to be speedily disseminated. To overcome this limitation, a Multi-Level Translation Method based on the Constructive Process Theory has been proposed. This paper describes the benefits of using this method in the Japanese-to-English machine translation system ALT-J/E.
In comparison with conventional compositional methods, the Multi-Level Translation Method emphasizes the importance of the meaning contained in expression structures as a whole. It is shown to be capable of translating typical written Japanese based on the meaning of the text in its context, with comparative ease. We are now hopeful of carrying out useful machine translation with no manual pre-editing.
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Submitted 1 November, 1995; v1 submitted 31 October, 1995;
originally announced October 1995.
