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Electronic Structure of a Single-Component Molecular Conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) under High Pressure
Authors:
Reizo Kato,
Hengbo Cui,
Takaaki Minamidate,
Hamish H. -M. Yeung,
Yoshikazu Suzumura
Abstract:
We examined high-pressure electronic structure of a single-component molecular conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) at room temperature, based on the crystal structure determined by single crystal synchrotron X-ray diffraction measurements at 5.9 GPa. The monoclinic unit cell contains four molecules that form two crystallographically independent molecular layers…
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We examined high-pressure electronic structure of a single-component molecular conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) at room temperature, based on the crystal structure determined by single crystal synchrotron X-ray diffraction measurements at 5.9 GPa. The monoclinic unit cell contains four molecules that form two crystallographically independent molecular layers. A tight-binding model of 8 $\times$ 8 matrix Hamiltonian gives an electronic structure as a Dirac electron system. The Dirac point describes a loop within the first Brillouin zone, and a nodal line semimetal is obtained. The noticeable property of the Dirac cone with a linear dispersion is shown by calculating density of states (DOS). The Dirac cone in this system is associated with the crossing of HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) bands, which originates from the direct interaction between different molecular layers. This is a newly found mechanism in addition to the indirect one [J. Phys. Soc. Jpn., {\bf 86}, 064705 (2017)]. The Dirac points emerge as a line, when the HOMO and LUMO bands meet on the surface and the HOMO-LUMO couplings are absent. Such a mechanism is verified using a reduced model of 4 $\times$ 4 matrix Hamiltonian. The deviation of the band energy ($δE$) at the Dirac point from the Fermi level is very small ($δE < $ 0.4meV). The nodal line is examined by calculating the parity of the occupied band eigen states at TRIM (Time Reversal Invariant Momentum) showing that the topological number is 1.
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Submitted 22 October, 2020; v1 submitted 20 August, 2020;
originally announced August 2020.
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Mechanisms for collective inversion-symmetry breaking in dabconium perovskite ferroelectrics
Authors:
Dominic J. W. Allen,
Nicholas C. Bristowe,
Andrew L. Goodwin,
Hamish H. -M. Yeung
Abstract:
Dabconium hybrid perovskites include a number of recently-discovered ferroelectric phases with large spontaneous polarisations. The origin of ferroelectric response has been rationalised in general terms in the context of hydrogen bonding, covalency, and strain coupling. Here we use a combination of simple theory, Monte Carlo simulations, and density functional theory calculations to assess the ab…
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Dabconium hybrid perovskites include a number of recently-discovered ferroelectric phases with large spontaneous polarisations. The origin of ferroelectric response has been rationalised in general terms in the context of hydrogen bonding, covalency, and strain coupling. Here we use a combination of simple theory, Monte Carlo simulations, and density functional theory calculations to assess the ability of these microscopic ingredients---together with the always-present through-space dipolar coupling---to account for the emergence of polarisation in these particular systems whilst not in other hybrid perovskites. Our key result is that the combination of A-site polarity, preferred orientation along $\langle111\rangle$ directions, and ferroelastic strain coupling drives precisely the ferroelectric transition observed experimentally. We rationalise the absence of polarisation in many hybrid perovskites, and arrive at a set of design rules for generating FE examples beyond the dabconium family alone.
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Submitted 9 June, 2020;
originally announced June 2020.
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Guest-Tunable Dielectric Sensing Using a Single Crystal of HKUST-1
Authors:
Arun S. Babal,
Abhijeet K. Chaudhari,
Hamish H. -M. Yeung,
**-Chong Tan
Abstract:
There is rising interest on low-k dielectric materials based on porous metal-organic frameworks (MOFs) for improved electrical insulation in microelectronics. Herein, we demonstrate the concept of MOF dielectric sensor built from a single crystal of HKUST-1. We study guest encapsulation effects of polar and non-polar molecules, by monitoring the transient dielectric response and AC conductivity of…
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There is rising interest on low-k dielectric materials based on porous metal-organic frameworks (MOFs) for improved electrical insulation in microelectronics. Herein, we demonstrate the concept of MOF dielectric sensor built from a single crystal of HKUST-1. We study guest encapsulation effects of polar and non-polar molecules, by monitoring the transient dielectric response and AC conductivity of the crystal exposed to different vapors (water, I2, methanol, ethanol). The dielectric properties were measured along the <100> crystal direction in the frequency range of 100 Hz to 2 MHz. The dielectric data show the efficacy of MOF dielectric sensor for discriminating the guest analytes. The time-dependent transient response reveals dynamics of the molecular inclusion and exclusion processes in the nanoscale pores. Since dielectric response is ubiquitous to all MOF materials (unlike DC conductivity and fluorescence), our results demonstrate the potential of dielectric MOF sensors compared to resistive sensors and luminescence-based approaches.
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Submitted 13 February, 2020;
originally announced February 2020.
