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Dzyaloshinskii-Moriya interaction as a fast quantum information scrambler
Authors:
Fatih Ozaydin,
Azmi Ali Altintas,
Can Yesilyurt,
Cihan Bayındır
Abstract:
Black holes are conjectured to be the fastest information scramblers, and within holographic duality, the speed of quantum information scrambling of thermal states of quantum systems is at the heart of studies of chaos and black hole dynamics. Here, considering the Ising interaction on the thermal state of spin chains with Dzyaloshinskii-Moriya (DM) interaction and measuring the out-of-time-order…
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Black holes are conjectured to be the fastest information scramblers, and within holographic duality, the speed of quantum information scrambling of thermal states of quantum systems is at the heart of studies of chaos and black hole dynamics. Here, considering the Ising interaction on the thermal state of spin chains with Dzyaloshinskii-Moriya (DM) interaction and measuring the out-of-time-order correlation functions, we study the effect of DM interaction on the speed of scrambling the quantum information. On the contrary to its advantages in quantum information and metrology such as exciting entanglement and quantum Fisher information, we show that DM interaction speeds up the information scrambling. We also show that the increasing temperature slows down the scrambling process due to vanishing quantum correlations.
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Submitted 7 October, 2021;
originally announced October 2021.
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Deterministic preparation of W states via spin-photon interactions
Authors:
Fatih Ozaydin,
Can Yesilyurt,
Sinan Bugu,
Masato Koashi
Abstract:
Spin systems such as silicon or nitrogen vacancy centers in diamond, quantum dots and quantum dot molecules coupled to optical cavities appear as key elements for creating quantum networks as not only constituting the nodes of the network, but also assisting the creation of photonic networks. Here we study deterministic preparation of arbitrary size $W$ states with spin systems. We present an effi…
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Spin systems such as silicon or nitrogen vacancy centers in diamond, quantum dots and quantum dot molecules coupled to optical cavities appear as key elements for creating quantum networks as not only constituting the nodes of the network, but also assisting the creation of photonic networks. Here we study deterministic preparation of arbitrary size $W$ states with spin systems. We present an efficient operation on three qubits, two being the logical qubits and one being the ancillary qubit, where no interaction between the logical qubits are required. The proposed operation can create a $W$-type Einstein-Podolsky-Rosen (EPR) pair from two separable qubits, and expand that EPR pair or an arbitrary size $W$ state by one, creating a $W$-like state. Taking this operation as the fundamental building block, we show how to create a large scale $W$ state out of separable qubits, or double the size of a $W$ state. Based on this operation and focusing on nitrogen vacancy (NV) centers in diamond as an exemplary spin system, we propose a setup for preparing $W$ states of circularly polarized photons, assisted by a single spin qubit, where no photon-photon interactions are required. Next, we propose a setup for preparing $W$ states of spin qubits of spatially separated systems, assisted by a single photon. We also analyze the effects of possible imperfections in implementing the gates on the fidelity of the generated $W$ states. In our setups, neither post-measurement, nor post-processing on the states of spin or photonic qubit is required. Our setups can be implemented with current technology, and we anticipate that they contribute to quantum science and technologies.
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Submitted 21 May, 2021;
originally announced May 2021.
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Quantum dots formed in three-dimensional Dirac semimetal Cd$_3$As$_2$ nanowires
Authors:
Minkyung Jung,
Kenji Yoshida,
Kidong Park,
Xiao-Xiao Zhang,
Can Yesilyurt,
Zhuo Bin Siu,
Mansoor B. A. Jalil,
**wan Park,
Jeunghee Park,
Naoto Nagaosa,
Jungpil Seo,
Kazuhiko Hirakawa
Abstract:
We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably,…
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We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably, in this regime, the Cd$_{3}$As$_{2}$ nanowire device exhibits Coulomb diamond features, indicating that a clean single QD forms in the Dirac semimetal nanowire. Our results show that a p$-$type QD can be formed between two n$-$type leads underneath metal contacts in the nanowire by applying gate voltages under strong magnetic fields. Analysis of the quantum confinement in the gapless band structure confirms that p$-$n junctions formed between the p$-$type QD and two neighboring n$-$type leads under high magnetic fields behave as resistive tunnel barriers due to cyclotron motion, resulting in the suppression of Klein tunneling. The p$-$type QD with magnetic field-induced confinement shows a single hole filling. Our results will open up a route to quantum devices such as QDs or quantum point contacts based on Dirac and Weyl semimetals.
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Submitted 16 December, 2018;
originally announced December 2018.
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Strain-controlled valley and spin separation in silicene heterojunctions
Authors:
Yuan Li,
H. B. Zhu,
G. Q. Wang,
Y. Z. Peng,
J. R. Xu,
Z. H. Qian,
R. Bai,
G. H. Zhou,
C. Yesilyurt,
Z. B. Siu,
M. B. A. Jalil
Abstract:
We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmiss…
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We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of valley- and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices.
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Submitted 28 June, 2018; v1 submitted 8 July, 2017;
originally announced July 2017.
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Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion
Authors:
Can Yesilyurt,
Zhuo Bin Siu,
Seng Ghee Tan,
Gengchiau Liang,
Shengyuan A. Yang,
Mansoor B. A. Jalil
Abstract:
Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angl…
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Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angle-space according to their valley index. A real magnetic barrier configuration is used to select allowed transmission angles, which results in electrically controllable and switchable valley polarization. Our findings may pave the way for experimental investigation of valley polarization, as well as valleytronic and electron optic applications in Weyl semimetals.
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Submitted 9 February, 2018; v1 submitted 19 May, 2017;
originally announced May 2017.
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Deterministic creation of a four-qubit W state using one- and two-qubit gates
Authors:
Firat Diker,
Can Yesilyurt
Abstract:
We propose an optical scheme to build an entangled network composed of $W$ state based on polarization encoded qubits (photons). This new setup consists of 2 $cNOT$ gates, 4 $V$ gates, 2 $Hadamard$ gates and basic optical tools such as polarizing beamsplitters ($PBS$s) and path couplers ($PC$s). $V$ gate is a specially-designed tool acting as a two-qubit gate which is composed of a $cNOT$ gate, 3…
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We propose an optical scheme to build an entangled network composed of $W$ state based on polarization encoded qubits (photons). This new setup consists of 2 $cNOT$ gates, 4 $V$ gates, 2 $Hadamard$ gates and basic optical tools such as polarizing beamsplitters ($PBS$s) and path couplers ($PC$s). $V$ gate is a specially-designed tool acting as a two-qubit gate which is composed of a $cNOT$ gate, 3 $PBS$s and a $PC$. By using this gate, one benefits from the temporarily generated optical degree of freedom, which is the spatial mode of a photon in the proposed scheme. Using an extra degree of freedom allows us to perform more capable processing for $W$-state creation protocols. We use four photons as input, which means we do not need entanglement as a resource. Also, we show that the proposed scheme can be implemented by operating the quantum optical gates which can be realized via current photonics technology.
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Submitted 25 April, 2017;
originally announced April 2017.
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Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced by the aid of tilted energy dispersion without a band gap. The origin of this effect is…
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We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced by the aid of tilted energy dispersion without a band gap. The origin of this effect is the shift of the electrons wave-vector at barrier boundaries caused by i) the pseudo-magnetic field induced by electrical potential, i.e., a newly discovered feature that is only possible in the materials possessing tilted energy dispersion, ii) the real magnetic field induced by ferromagnetic layer deposited on the top of the system. We use realistic barrier structure applicable in current nanotechnology and analyze the temperature dependence of the tunneling conductance. The new approach presented here may resolve a major problem of possible transistor applications in topological semimetals, i.e., the absence of normal backscattering and gapless band structure.
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Submitted 5 January, 2017;
originally announced January 2017.
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Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Shengyuan A. Yang,
Mansoor B. A. Jalil
Abstract:
Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semimetal p-n-p junction. The angular dependence of electron tunneling exhibits an anomalous profile such that perfect transmission angles are shifted along the direction of the tilt. Coupling of the tilted dispersion and el…
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Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semimetal p-n-p junction. The angular dependence of electron tunneling exhibits an anomalous profile such that perfect transmission angles are shifted along the direction of the tilt. Coupling of the tilted dispersion and electrical potential within the barrier region gives rise to a transverse momentum shift, which is analogous to the transverse Lorentz displacement induced by magnetic barriers.
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Submitted 22 August, 2017; v1 submitted 20 October, 2016;
originally announced October 2016.
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Influence of Fermi arc states and double Weyl node on tunneling in a Dirac semimetal
Authors:
Zhuo Bin Siu,
Can Yesilyurt,
Mansoor B. A. Jalil,
Seng Ghee Tan
Abstract:
Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these stud…
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Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these studies. In this work we study the tunneling in a thin film system of the Dirac semimetal $\text{Na}_3\text{Bi}$ consisting of a central segment with a gate potential, sandwiched between identical semi-infinite source and drain segments. The model Hamiltonian we use for $\text{Na}_3\text{Bi}$ gives, for each spin, two Weyl nodes separated in $k$-space symmetrically about $k_z=0$. The presence of a top and bottom surface in the thin film geometry results in the appearance of Fermi arc states and energy subbands. We show that (for each spin) the presence of two Weyl nodes and the Fermi arc states result in enhanced transmission oscillations, and finite transmission even when the energy falls within the \textit{bulk} band gap in the central segment respectively. These features are not evident in single Weyl node models.
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Submitted 28 June, 2016;
originally announced June 2016.
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Klein tunneling in Weyl semimetals under the influence of magnetic field
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
Klein tunneling refers to the absence of normal backscattering of electrons even under the case of high potential barriers. At the barrier interface, the perfect matching of electron and hole wavefunctions enables a unit transmission probability for normally incident electrons. It is theoretically and experimentally well understood in two-dimensional relativistic materials such as graphene. Here w…
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Klein tunneling refers to the absence of normal backscattering of electrons even under the case of high potential barriers. At the barrier interface, the perfect matching of electron and hole wavefunctions enables a unit transmission probability for normally incident electrons. It is theoretically and experimentally well understood in two-dimensional relativistic materials such as graphene. Here we investigate the Klein tunneling effect in Weyl semimetals under the influence of magnetic field induced by anti-symmetric ferromagnetic stripes placed at barrier boundaries. Our results show that the resonance of Fermi wave vector at specific barrier lengths gives rise to perfect transmission rings, i.e., three-dimensional analogue of the so-called magic transmission angles in two-dimensional Dirac semimetals. Besides, the transmission profile can be shifted by application of magnetic field, a property which may be utilized in electro-optic applications. When the applied potential is close to the Fermi level, a particular incident vector can be selected for transmission by tuning the applied magnetic field, thus enabling highly selective transmission of electrons in the bulk of Weyl semimetals. Our analytical and numerical calculations obtained by considering Dirac electrons in three regions and using experimentally feasible parameters can pave the way for relativistic tunneling applications in Weyl semimetals.
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Submitted 30 May, 2016;
originally announced May 2016.
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Deterministic Local Expansion of W States
Authors:
Can Yesilyurt,
Sinan Bugu,
Fatih Ozaydin,
Azmi Ali Altintas,
Mark Tame,
Lan Yang,
Sahin Kaya Ozdemir
Abstract:
In large quantum systems multipartite entanglement can be found in many inequivalent classes under local operations and classical communication. Preparing states of arbitrary size in different classes is important for performing a wide range of quantum protocols. W states, in particular, constitute a class with a variety of quantum networking protocols. However, all known schemes for preparing W s…
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In large quantum systems multipartite entanglement can be found in many inequivalent classes under local operations and classical communication. Preparing states of arbitrary size in different classes is important for performing a wide range of quantum protocols. W states, in particular, constitute a class with a variety of quantum networking protocols. However, all known schemes for preparing W states are probabilistic, with resource requirements increasing at least sub-exponentially. We propose a deterministic scheme for preparing W states that requires no prior entanglement and can be performed locally. We introduce an all-optical setup that can efficiently prepare W states of arbitrary size. Our scheme advances the use of W states in real-world quantum networks and could be extended to other physical systems.
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Submitted 11 February, 2016;
originally announced February 2016.
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Perfect valley filter in strained graphene with single barrier region
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the regions boundaries. We show that under the condition of matching magnetic field strength, strain potential, and Fermi energy, the transmitted current is com…
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We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the regions boundaries. We show that under the condition of matching magnetic field strength, strain potential, and Fermi energy, the transmitted current is composed of only one valley contribution. The desired valley current can transmit with zero reflection while the electrons from the other valley are totally reflected. Thus, the system generates pure valley-polarized current with maximum conductance. The chosen parameters of uniaxial strain and magnetic field are in the range of experimental feasibility, which suggests that the proposed scheme can be realized with current technology.
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Submitted 10 February, 2016;
originally announced February 2016.
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Constructing Quantum Logic Gates Using q-Deformed Harmonic Oscillator Algebras
Authors:
Azmi Ali Altintas,
Fatih Ozaydin,
Can Yesilyurt,
Sinan Bugu,
Metin Arik
Abstract:
We study two-level q-deformed angular momentum states and us- ing q-deformed harmonic oscillators, we provide a framework for con- structing qubits and quantum gates. We also present the construction of some basic quantum gates including CNOT, SWAP, Toffoli and Fredkin.
We study two-level q-deformed angular momentum states and us- ing q-deformed harmonic oscillators, we provide a framework for con- structing qubits and quantum gates. We also present the construction of some basic quantum gates including CNOT, SWAP, Toffoli and Fredkin.
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Submitted 23 April, 2015;
originally announced April 2015.
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Efficient Dual Spin-Valley Filter In Strained Silicene
Authors:
Can Yesilyurt,
Seng Ghee Tan,
Gengchiau Liang,
Mansoor B. A. Jalil
Abstract:
We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modif…
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We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modify the electrochemical potential. For the first region, we investigated the effect of the uniaxial strain in inducing angular separation of the two valley spins in momentum-space, and further spin separation by the spin dependent electric potential induced by the exchange field. We then evaluated the delta-function magnetic field and electrochemical potential combination in the second region to yield the transverse displacement for the selection of the requisite spin-valley combination. We demonstrated the optimal conditions in the first barrier to induce a highly anisotropic transmission profile, which enables controllable and efficient filtering (> 90% efficiency) by the second region for all four spin-valley combinations. Based on the analytical results, we predict the feasibility of experimental realization of dual spin-valley silicene-based filtering device.
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Submitted 2 February, 2016; v1 submitted 8 April, 2015;
originally announced April 2015.
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Fusing multiple W states simultaneously with a Fredkin gate
Authors:
Fatih Ozaydin,
Sinan Bugu,
Can Yesilyurt,
Azmi Ali Altintas,
Mark Tame,
Sahin Kaya Ozdemir
Abstract:
We propose an optical scheme to prepare large-scale entangled networks of W states. The scheme works by simultaneously fusing three polarization-encoded W states of arbitrary size via accessing only one qubit of each W state. It is composed of a Fredkin gate (controlled-swap gate), two fusion gates [as proposed in New J. Phys. 13, 103003 (2011)] and an H-polarized ancilla photon. Starting with thr…
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We propose an optical scheme to prepare large-scale entangled networks of W states. The scheme works by simultaneously fusing three polarization-encoded W states of arbitrary size via accessing only one qubit of each W state. It is composed of a Fredkin gate (controlled-swap gate), two fusion gates [as proposed in New J. Phys. 13, 103003 (2011)] and an H-polarized ancilla photon. Starting with three $n$-qubit W states, the scheme prepares a new W state with $3(n-1)$-qubits after postselection if both fusion gates operate successfully, i.e. a four-fold coincidence at the detectors. The proposed scheme reduces the cost of creating arbitrarily large W states considerably when compared to previously reported schemes.
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Submitted 14 February, 2014; v1 submitted 13 February, 2014;
originally announced February 2014.
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Enhancing the W State Quantum Network Fusion Process with A Single Fredkin Gate
Authors:
Sinan Bugu,
Can Yesilyurt,
Fatih Ozaydin
Abstract:
Integrating a single Fredkin (controlled swap) gate to the previously introduced W state fusion mechanism (Ozdemir et al, N. J. Phys. 13, 103003, 2011) and using an ancillary photon, we increase the size of the fused W states and essentially, we improve the success probability of the fusion process in a promising way for a possible deterministic W state fusion mechanism. Besides fusing arbitrary s…
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Integrating a single Fredkin (controlled swap) gate to the previously introduced W state fusion mechanism (Ozdemir et al, N. J. Phys. 13, 103003, 2011) and using an ancillary photon, we increase the size of the fused W states and essentially, we improve the success probability of the fusion process in a promising way for a possible deterministic W state fusion mechanism. Besides fusing arbitrary size W states, our setup can also fuse Bell states to create W states with a success probability 3/4 which is much higher than the previous works. Therefore using only this setup, it is now possible to start with Bell pairs to create and expand arbitrary size W states. Since higher probability of success implies a lower cost of resource in terms of the number of the states spent to achieve a target size, our setup gives rise to more cost-efficient scenarios.
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Submitted 16 March, 2013;
originally announced March 2013.