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Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy
Authors:
Hyunseok Kim,
Yunpeng Liu,
Kuangye Lu,
Celesta S. Chang,
Kuan Qiao,
Ki Seok Kim,
Bo-In Park,
Junseok Jeong,
Menglin Zhu,
Jun Min Suh,
Yongmin Baek,
You ** Ji,
Sungsu Kang,
Sangho Lee,
Ne Myo Han,
Chansoo Kim,
Chanyeol Choi,
Xinyuan Zhang,
Haozhe Wang,
Ling** Kong,
Jungwon Park,
Kyusang Lee,
Geun Young Yeom,
Sungkyu Kim,
**woo Hwang
, et al. (4 additional authors not shown)
Abstract:
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to…
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Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.
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Submitted 7 April, 2022;
originally announced April 2022.
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Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells
Authors:
Eric Singh,
Ki Seok Kim,
Geun Young Yeom,
Hari Singh Nalwa
Abstract:
Dye-sensitized solar cells (DSSCs) are gaining considerable interest as alternatives to the semiconductor-based thin film solar cells. The noble metal platinum (Pt) is conventionally used as counter electrode (CE) material for fabricating DSSCs. Since Pt is expensive and scarce, new materials have been explored to develop cost-effective Pt-free counter electrodes for DSSCs. Two-dimensional (2D) gr…
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Dye-sensitized solar cells (DSSCs) are gaining considerable interest as alternatives to the semiconductor-based thin film solar cells. The noble metal platinum (Pt) is conventionally used as counter electrode (CE) material for fabricating DSSCs. Since Pt is expensive and scarce, new materials have been explored to develop cost-effective Pt-free counter electrodes for DSSCs. Two-dimensional (2D) graphene-based counter electrodes have achieved the highest known power conversion efficiency (η) of 13%, which has stimulated research activities in 2D layered transition metal dichalcogenides (TMDs) for develo** Pt-free DSSCs. In this review, progress made on alternative counter electrodes for fabricating low-cost Pt-free DSSCs, based on earth-abundant 2D TMDs including MoS2, WS2, TiS2, FeS2, CoS2, NiS2, SnS2, MoSe2, NbSe2, TaSe2, NiSe2, FeSe2, CoSe2, Bi2Se3 and their based composites, are discussed and summarized. Also, the considerable progress made on thin films of MoS2 and MoS2 based carbon, graphene, carbon nanotubes (CNTs), carbon nanofibers (CNFs), and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) composites as efficient counter electrodes (CEs) for DSSCs are discussed, in terms of their electrochemical and photovoltaic properties. At present, PCE values higher than that of standard Pt CE have been recorded for a number of TMD-based CEs, which include MoS2 and MoSe2/thin films deposited on Mo foil, MoS2/CNTs, MoS2/graphene, MoS2/carbon, MoSe2/PEDOT:PSS, NbSe2, FeS2, FeSe2 nanosheets, TiS2/graphene, and NiS2/graphene hybrid systems in DSSCs, for the reduction of triiodide (I3-) to iodide (I-). The highest PCE (η=10.46%) versus Pt CE (η=8.25%) at 1 Sun (100 mW/cm2, AM 1.5G) was measured for DSSCs having a low cost and flexible CoSe2/carbon-nanoclimbing wall counter electrode deposited on a nickel foam.
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Submitted 12 March, 2017;
originally announced March 2017.
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High Open-circuit Voltage of Graphene-Based Photovoltaic Cells Modulated by Layer-by-Layer Transfer
Authors:
Kyuwook Ihm,
Kyung-jae Lee,
Jong Tae Lim,
Jae Wook Kwon,
Tai-Hee Kang,
Sukmin Chung,
Sukang Bae,
** Ho Kim,
Byung Hee Hong,
Geun Young Yeom
Abstract:
Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently, the photovoltaic effects of a heterojunction structure embedded with few layer graphene (FLG) have been demonstrated. Here, we report the photovoltaic response o…
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Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently, the photovoltaic effects of a heterojunction structure embedded with few layer graphene (FLG) have been demonstrated. Here, we report the photovoltaic response of graphene-semiconductor junctions and the controlled open-circuit voltage (Voc) with varying numbers of graphene layers. After unavoidably adsorbed contaminants were removed from the FLGs, by means of in situ annealing, prepared by layer-by-layer transfer of the chemically grown graphene layer, the work functions of FLGs showed a sequential increase as the graphene layers increase, despite of random interlayer-stacking, resulting in the modulation of photovoltaic behaviors of FLGs/Si interfaces. The surface photovoltaic effects observed here show an electronic realignment in the depth direction in the FLG heterojunction systems, indicating future potential toward solar devices utilizing the excellent transparency and flexibility of FLG.
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Submitted 29 March, 2010;
originally announced March 2010.
