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Enabling remote quantum emission in 2D semiconductors via porous metallic networks
Authors:
Jose J. Fonseca,
Andrew L. Yeats,
Brandon Blue,
Maxim Zalalutdinov,
Todd Brintlinger,
Blake S. Simpkins,
Daniel C. Ratchford,
James C. Culbertson,
Joel Q. Grim,
Samuel G. Carter,
Masa Ishigami,
Rhonda M. Stroud,
Cory Cress,
Jeremy T. Robinson
Abstract:
The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in…
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The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a 'reverse epitaxial' process where initially nanocrystalline Au films become highly textured and in close crystallographic registry to the 2D crystal overlayer. With continued annealing, the metal underlayer dewets to form an oriented pore enabled network (OPEN) film in which the 2DC overlayer remains suspended above or coats the inside of the metal pores. This OPEN film geometry supports SPPs launched by either direct laser excitation or by light emitted from the TMD semiconductor itself, where energy in-coupling and out-coupling occurs at the metal pore sites such that dielectric spacers between the metal and 2DC layer are unnecessary. At low temperatures a high density of single-photon emitters (SPEs) is present across an OPEN-WSe2 film, and we demonstrate non-local excitation of SPEs at a distance of 17 μm with minimal loss of photon purity. Our results suggest the OPEN film geometry is a versatile platform that could facilitate the use of layered materials in quantum optics systems.
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Submitted 16 December, 2019;
originally announced December 2019.
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Helicity dependent photocurrent in electrically gated (Bi,Sb)_2Te_3 thin films
Authors:
Yu Pan,
Qing-Ze Wang,
Andrew L. Yeats,
Timothy Pillsbury,
Thomas C. Flanagan,
Anthony Richardella,
Haijun Zhang,
David D. Awschalom,
Chao-Xing Liu,
Nitin Samarth
Abstract:
Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood…
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Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood. We resolve the puzzle through a comprehensive study of the helicity-dependent photocurrent in (Bi,Sb)_2Te_3 thin films as a function of the incidence angle of the optical excitation, its wavelength, and the gate-tuned chemical potential. Our observations allow us to unambiguously identify the circular photo-galvanic effect as the dominant mechanism for the helicity-dependent photocurrent. Additionally, we use an analytical calculation to relate the directional nature of the photocurrent to asymmetric optical transitions between the topological surface states and bulk bands. The insights we obtain are important for engineering opto-spintronic devices that rely on optical steering of spin and charge currents.
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Submitted 13 June, 2017;
originally announced June 2017.
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Optical charge state control of spin defects in 4H-SiC
Authors:
Gary Wolfowicz,
Christopher P. Anderson,
Andrew L. Yeats,
Samuel J. Whiteley,
Jens Niklas,
Oleg G. Poluektov,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the…
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Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy (VV) and silicon vacancy (Vsi), obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from VV ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the relative charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.
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Submitted 26 May, 2017;
originally announced May 2017.
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Local optical control of ferromagnetism and chemical potential in a topological insulator
Authors:
Andrew L. Yeats,
Peter J. Mintun,
Yu Pan,
Anthony Richardella,
Bob B. Buckley,
Nitin Samarth,
David D. Awschalom
Abstract:
Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)$_2$Te$_3$ grown on SrTiO$_3$. By optically modulating the coercivity of the…
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Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)$_2$Te$_3$ grown on SrTiO$_3$. By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO$_3$ substrates, we control the local chemical potential of the films. This optical gating effect allows us to write and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. Dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.
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Submitted 3 April, 2017;
originally announced April 2017.
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Persistent Optical Gating of a Topological Insulator
Authors:
Andrew L. Yeats,
Yu Pan,
Anthony Richardella,
Peter J. Mintun,
Nitin Samarth,
David D. Awschalom
Abstract:
Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI materials is important if these states are to become useful in new technologies, or as a venue for exotic physics. Unfortunately, chemical potential tuning is ch…
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Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI materials is important if these states are to become useful in new technologies, or as a venue for exotic physics. Unfortunately, chemical potential tuning is challenging in TIs in part because the fabrication of electrostatic top-gates tends to degrade material properties and the addition of chemical dopants or adsorbates can cause unwanted disorder. Here, we present an all-optical technique which allows persistent, bidirectional gating of a (Bi,Sb)2Te3 channel by optically manipulating the distribution of electric charge below its interface with an insulating SrTiO3 substrate. In this fashion we optically pattern p-n junctions in a TI material, which we subsequently image using scanning photocurrent microscopy. The ability to dynamically write and re-write mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The optical gating effect may be adaptable to other material systems, providing a more general mechanism for reconfigurable electronics.
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Submitted 4 March, 2015;
originally announced March 2015.
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Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator
Authors:
Duming Zhang,
Anthony Richardella,
David W. Rench,
Su-Yang Xu,
Abhinav Kandala,
Thomas C. Flanagan,
Haim Beidenkopf,
Andrew L. Yeats,
Bob B. Buckley,
Paul V. Klimov,
David D. Awschalom,
Ali Yazdani,
Peter Schiffer,
M. Zahid Hasan,
Nitin Samarth
Abstract:
The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temp…
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The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temperature range 15 K $\leq T \leq 100$ K, accompanied by a suppressed density of surface states at the Dirac point. Secondary ion mass spectroscopy and scanning tunneling microscopy reveal an inhomogeneous distribution of Mn atoms, with a tendency to segregate towards the sample surface. Magnetometry and anisotropic magnetoresistance measurements are insensitive to the high temperature ferromagnetism seen in surface studies, revealing instead a low temperature ferromagnetic phase at $T \lesssim 5$ K. The absence of both a magneto-optical Kerr effect and anomalous Hall effect suggests that this low temperature ferromagnetism is unlikely to be a homogeneous bulk phase but likely originates in nanoscale near-surface regions of the bulk where magnetic atoms segregate during sample growth. Although the samples are not ideal, with both bulk and surface contributions to electron transport, we measure a magnetoconductance whose behavior is qualitatively consistent with predictions that the opening of a gap in the Dirac spectrum drives quantum corrections to the conductance in topological insulators from the symplectic to the orthogonal class.
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Submitted 7 November, 2012; v1 submitted 13 June, 2012;
originally announced June 2012.
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Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B
Authors:
A. Richardella,
D. M. Zhang,
J. S. Lee,
A. Koser,
D. W. Rench,
A. L. Yeats,
B. B. Buckley,
D. D. Awschalom,
N. Samarth
Abstract:
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundre…
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We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.
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Submitted 8 December, 2010;
originally announced December 2010.
