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Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
Authors:
Han Liu,
Mengwei Si,
Yexin Deng,
Adam T. Neal,
Yuchen Du,
Sina Najmaei,
Pulickel M. Ajayan,
Jun Lou,
Peide D. Ye
Abstract:
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length…
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In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ~0.63 μm in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit.
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Submitted 18 December, 2013;
originally announced December 2013.
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Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor
Authors:
Adam T. Neal,
Han Liu,
Jiangjiang Gu,
Peide D. Ye
Abstract:
We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, fo…
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We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, for the first time without optical techniques, to estimate the spin orbit scattering length to be 430 nm, pointing to the potential of MoS2 for spintronics applications. Via Hall-effect measurements, we observe a low temperature Hall mobility of 311 cm2/Vs at T = 1 K which decreases as a power law with a characteristic exponent γ=1.5 from 10 K to 60 K. At room temperature, we observe Hall mobility of 24 cm2/Vs. By determining the Hall factor for MoS2 to be 1.35 at T = 1 K and 2.4 at room temperature, we observe drift mobility of 420 cm2/Vs and 56 cm2/Vs at T = 1 K and room temperature, respectively.
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Submitted 2 August, 2013;
originally announced August 2013.
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Molecular Do** of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
Authors:
Yuchen Du,
Han Liu,
Adam T. Neal,
Mengwei Si,
Peide D. Ye
Abstract:
For the first time, polyethyleneimine (PEI) do** on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also…
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For the first time, polyethyleneimine (PEI) do** on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also confirms a negative shift upon the molecular do**. All studies demonstrate the feasibility of PEI molecular do** in MoS2 transistors, and its potential applications in layer-structured semiconducting 2D crystals.
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Submitted 7 May, 2014; v1 submitted 29 July, 2013;
originally announced July 2013.
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Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
Authors:
Han Liu,
Mengwei Si,
Sina Najmaei,
Adam T. Neal,
Yuchen Du,
Pulickel M. Ajayan,
Jun Lou,
Peide D. Ye
Abstract:
Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transist…
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Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω.mm, which can be significantly decreased to 10 Ω.mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm2/Vs in monolayer CVD MoS2 films, respectively.
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Submitted 4 March, 2013;
originally announced March 2013.
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Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs
Authors:
Jiangjiang J. Gu,
Xinwei Wang,
Heng Wu,
Roy G. Gordon,
Peide D. Ye
Abstract:
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a…
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High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an ultrathin (0.5nm) Al2O3 interfacial layer between higher-k and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63mV/dec has been demonstrated at sub-80nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.
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Submitted 22 February, 2013;
originally announced February 2013.
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20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
Authors:
J. J. Gu,
X. W. Wang,
H. Wu,
J. Shao,
A. T. Neal,
M. J. Manfra,
R. G. Gordon,
P. D. Ye
Abstract:
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. H…
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In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.
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Submitted 17 December, 2012;
originally announced December 2012.
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III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
Authors:
J. J. Gu,
X. W. Wang,
J. Shao,
A. T. Neal,
M. J. Manfra,
R. G. Gordon,
P. D. Ye
Abstract:
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET driv…
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In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET drive current. The top-down technology developed in this paper has opened a viable pathway towards future low-power logic and RF transistors with high-density III-V NWs.
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Submitted 17 December, 2012;
originally announced December 2012.
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Channel Length Scaling of MoS2 MOSFETs
Authors:
Han Liu,
Adam T. Neal,
Peide D. Ye
Abstract:
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS2 transistors. We observe no obvious short channel effects on the devi…
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In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS2 transistors. We observe no obvious short channel effects on the device with 100 nm channel length (Lch) fabricated on a 5 nm thick MoS2 2D crystal even when using 300 nm thick SiO2 as gate dielectric, and has a current on/off ratio up to ~109. We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS2 transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS2 interface, where a fully transparent contact is needed to achieve a high-performance short channel device.
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Submitted 12 September, 2012;
originally announced September 2012.
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Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Authors:
Jiangjiang J. Gu,
Heng Wu,
Yiqun Liu,
Adam T. Neal,
Roy G. Gordon,
Peide D. Ye
Abstract:
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effec…
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InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.
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Submitted 7 April, 2012;
originally announced April 2012.
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The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
Authors:
Han Liu,
Kun Xu,
Xujie Zhang,
Peide D. Ye
Abstract:
We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the crit…
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We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the semiconductor surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones Potentials, which could guide future optimization of the ALD process on 2D crystals.
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Submitted 15 February, 2012;
originally announced February 2012.
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MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
Authors:
Han Liu,
Peide D. Ye
Abstract:
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07…
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We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm^2/Vs. The highest current on/off ratio is over 10^8.
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Submitted 19 December, 2011;
originally announced December 2011.
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First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
Authors:
Jiangjiang Gu,
Yiqun Liu,
Yanqing Wu,
Robert Colby,
Roy G. Gordon,
Peide D. Ye
Abstract:
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and…
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The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.
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Submitted 15 December, 2011;
originally announced December 2011.
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Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors
Authors:
Han Liu,
Peide D. Ye
Abstract:
We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related…
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We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is achieved by using simultaneous dual gate control.
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Submitted 5 August, 2011;
originally announced August 2011.
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Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
Authors:
T. Shen,
J. J. Gu,
M. Xu,
Y. Q. Wu,
M. L. Bolen,
M. A. Capano,
L. W. Engel,
P. D. Ye
Abstract:
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack f…
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Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).
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Submitted 29 October, 2009; v1 submitted 26 August, 2009;
originally announced August 2009.
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Magneto-conductance Oscillations in Graphene Antidot Arrays
Authors:
T. Shen,
Y. Q. Wu,
M. A. Capano,
L. R. Rokhinson,
L. W. Engel,
P. D. Ye
Abstract:
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conductance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a sin…
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Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conductance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a single antidot. At low fields, weak localization is observed and its visibility is enhanced by intravalley scattering on antidot edges. At high fields, we observe two distinctive minima in magnetoconductance which can be attributed to commensurability oscillations between classical cyclotron orbits and antidot array. All mesoscopic features, surviving up to 70 K, reveal the unique electronic properties of graphene.
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Submitted 9 July, 2008;
originally announced July 2008.
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Top-gated graphene field-effect-transistors formed by decomposition of SiC
Authors:
Y. Q. Wu,
P. D. Ye,
M. A. Capano,
Y. Xuan,
Y. Sui,
M. Qi,
J. A. Cooper
Abstract:
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple gra…
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Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions unique transport properties in graphene layers. The measured electron and hole mobility on these fabricated graphene FETs are as high as 5400 cm2/Vs and 4400 cm2/Vs respectively, which are much larger than the corresponding values from conventional SiC or silicon.
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Submitted 27 February, 2008;
originally announced February 2008.
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Melting of a 2D Quantum Electron Solid in High Magnetic Field
Authors:
Yong P. Chen,
G. Sambandamurthy,
Z. H. Wang,
R. M. Lewis,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solids\cite{wilk:67}, where quantum effects often lead to unusual properties\cite{ekim:04}. In this letter we present experimental evidence to show that for a two dimensional (2D) solid formed by elec…
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The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solids\cite{wilk:67}, where quantum effects often lead to unusual properties\cite{ekim:04}. In this letter we present experimental evidence to show that for a two dimensional (2D) solid formed by electrons in a semiconductor sample under a strong perpendicular magnetic field\cite{shay:97} ($B$), the $T_m$ is not controlled by $n$, but effectively by the \textit{quantum correlation} between the electrons through the Landau level filling factor $ν$=$nh/eB$. Such melting behavior, different from that of all other known solids (including a classical 2D electron solid at zero magnetic field\cite{grim:79}), attests to the quantum nature of the magnetic field induced electron solid. Moreover, we found the $T_m$ to increase with the strength of the sample-dependent disorder that pins the electron solid.
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Submitted 12 July, 2006; v1 submitted 31 March, 2006;
originally announced April 2006.
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Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
Authors:
K. Lai,
P. D. Ye,
W. Pan,
D. C. Tsui,
S. A. Lyon,
M. Muhlberger,
F. Schaffler
Abstract:
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, vir…
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Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the SiO$_2$ dielectric formed by plasma-enhanced chemical-vapor-deposition(PECVD).
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Submitted 19 April, 2005;
originally announced April 2005.
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AC Magnetotransport in Reentrant Insulating Phases of Two-dimensional Electrons near 1/5 and 1/3 Landau fillings
Authors:
Yong P. Chen,
Z. H. Wang,
R. M. Lewis,
P. D. Ye,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
We have measured high frequency magnetotransport of a high quality two-dimensional electron system (2DES) near the reentrant insulating phase (RIP) at Landau fillings ($ν$) between 1/5 and 2/9. The magneto\textit{conductivity} in the RIP has resonant behavior around 150 MHz, showing a \textit{peak} at $ν$$\sim$0.21. Our data support the interpretation of the RIP as due to some pinned electron so…
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We have measured high frequency magnetotransport of a high quality two-dimensional electron system (2DES) near the reentrant insulating phase (RIP) at Landau fillings ($ν$) between 1/5 and 2/9. The magneto\textit{conductivity} in the RIP has resonant behavior around 150 MHz, showing a \textit{peak} at $ν$$\sim$0.21. Our data support the interpretation of the RIP as due to some pinned electron solid. We have also investigated a narrowly confined 2DES recently found to have a RIP at 1/3$<$$ν$$<$1/2 and we have revealed features, not seen in DC transport, that suggest some intriguing interplay between the 1/3 FQHE and RIP.
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Submitted 20 July, 2004;
originally announced July 2004.
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Evidence for Two Different Solid Phases of Two Dimensional Electrons in High Magnetic Fields
Authors:
Yong P. Chen,
R. M. Lewis,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
Z. H. Wang,
L. N. Pfeiffer,
K. W. West
Abstract:
We have performed RF spectroscopy on very high quality two dimensional electron systems in the high magnetic field insulating phase, usually associated with a Wigner solid (WS) pinned by disorder. We have found two different resonances in the frequency dependent real diagonal conductivity spectrum and we interpret them as coming from \textit{two} different pinned solid phases (labeled as "WS-A"…
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We have performed RF spectroscopy on very high quality two dimensional electron systems in the high magnetic field insulating phase, usually associated with a Wigner solid (WS) pinned by disorder. We have found two different resonances in the frequency dependent real diagonal conductivity spectrum and we interpret them as coming from \textit{two} different pinned solid phases (labeled as "WS-A" and "WS-B"). The resonance of WS-A is observable for Landau level filling $ν$$<$2/9 (but absent around the $ν$=1/5 fractional quantum Hall effect (FQHE)); it then \textit{crosses over} for $ν$$<$0.18 to the different WS-B resonance which dominates the spectrum at $ν$$<$0.125. Moreover, WS-A resonance is found to show dispersion with respect to the size of transmission line, indicating that WS-A has a large correlation length (exceeding $\sim$100 $μ$m); in contrast no such behavior is found for WS-B. We suggest that quantum correlations such as those responsible for FQHE may play an important role in giving rise to such different solids.
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Submitted 18 July, 2004;
originally announced July 2004.
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Evidence of a first order phase transition between Wigner crystal and Bubble Phases of 2D electrons in higher Landau levels
Authors:
R. M. Lewis,
Yong Chen,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
For filling factors $ν$ in the range between 4.16 and 4.28, we simultaneously detect {\it two} resonances in the real diagonal microwave conductivity of a two--dimensional electron system (2DES) at low temperature $T \approx 35$ mK. We attribute the resonances to Wigner crystal and Bubble phases of the 2DES in higher Landau Levels. For $ν$ below and above this range, only single resonances are o…
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For filling factors $ν$ in the range between 4.16 and 4.28, we simultaneously detect {\it two} resonances in the real diagonal microwave conductivity of a two--dimensional electron system (2DES) at low temperature $T \approx 35$ mK. We attribute the resonances to Wigner crystal and Bubble phases of the 2DES in higher Landau Levels. For $ν$ below and above this range, only single resonances are observed. The coexistence of both phases is taken as evidence of a first order phase transition. We estimate the transition point as $ν=4.22$.
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Submitted 23 January, 2004;
originally announced January 2004.
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Wigner crystalization about $ν$=3
Authors:
R. M. Lewis,
Yong Chen,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$σ_{xx}$], near integer filling factor, $ν=3$. This resonance depends strongly on $ν$, with peak frequency $f_{pk} \approx 1.7$ GHz at $ν=3.04$ or 2.92 close to integer $ν$, but $f_{pk} \approx$ 600 MHz at $ν=3.19$ or 2.82, the extremes of where the resonance is visible.
The dependence of $f_{pk}$ upon…
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We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$σ_{xx}$], near integer filling factor, $ν=3$. This resonance depends strongly on $ν$, with peak frequency $f_{pk} \approx 1.7$ GHz at $ν=3.04$ or 2.92 close to integer $ν$, but $f_{pk} \approx$ 600 MHz at $ν=3.19$ or 2.82, the extremes of where the resonance is visible.
The dependence of $f_{pk}$ upon $n^*$, the density of electrons in the partially filled level, is discussed and compared with similar measurments by Chen {\it et al.}\cite{yong} about $ν=1$ and 2. We interpret the resonance as due to a pinned Wigner crystal phase with density $n^*$ about the $ν=3$ state.
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Submitted 8 July, 2003;
originally announced July 2003.
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Microwave Resonance of 2D Wigner Crystal around integer Landau fillings
Authors:
Yong P. Chen,
R. M. Lewis,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
We have observed a resonance in the real part of the finite frequency diagonal conductivity using microwave absorption measurements in high quality 2D electron systems near {\em integer fillings}. The resonance exists in some neighborhood of filling factor around corresponding integers and is qualitatively similar to previously observed resonance of weakly pinned Wigner crystal in high $B$ and v…
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We have observed a resonance in the real part of the finite frequency diagonal conductivity using microwave absorption measurements in high quality 2D electron systems near {\em integer fillings}. The resonance exists in some neighborhood of filling factor around corresponding integers and is qualitatively similar to previously observed resonance of weakly pinned Wigner crystal in high $B$ and very small filling factor regime. Data measured around both $ν=1$ and $ν=2$ are presented. We interpret the resonance as the signature of Wigner crystal state around integer Landau levels.
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Submitted 30 January, 2003;
originally announced January 2003.
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Microwave resonances of the bubble phases in 1/4 and 3/4 filled higher Landau levels
Authors:
R. M. Lewis,
P. D. Ye,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
We have measured the diagonal conductivity in the microwave regime of an ultrahigh mobility two dimensional electron system. We find a sharp resonance in Re[sigma_{xx}] versus frequency when nu > 4 and the partial filling of the highest Landau level, nu^*, is ~ 1/4 or 3/4 and temperatures < 0.1 K. The resonance appears for a range of nu^* from 0.20 to 0.37 and again from 0.62 to 0.82. the peak f…
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We have measured the diagonal conductivity in the microwave regime of an ultrahigh mobility two dimensional electron system. We find a sharp resonance in Re[sigma_{xx}] versus frequency when nu > 4 and the partial filling of the highest Landau level, nu^*, is ~ 1/4 or 3/4 and temperatures < 0.1 K. The resonance appears for a range of nu^* from 0.20 to 0.37 and again from 0.62 to 0.82. the peak frequency, f_{pk} changes from ~ 500 to ~ 150 as nu^* = 1/2 is approached. This range of f_{pk} shows no dependence on nu where the resonance is observed. The quality factor, Q, of the resonance is maximum at ~ nu^* = 0.25 and 0.74. We interpret the resonance as due to a pinning mode of the bubble phase crystal.
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Submitted 31 July, 2002; v1 submitted 9 May, 2002;
originally announced May 2002.
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Correlation lengths of Wigner crystal order in two dimensional electron system at high magnetic field
Authors:
P. D. Ye,
L. W. Engel,
D. C. Tsui,
R. M. Lewis,
L. N. Pfeiffer,
K. West
Abstract:
The insulator terminating the fractional quantum Hall series at low Landau level filling νis generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is interpreted as a WC pinning mode. Systematically studying the resonance in a high quality sample for carrier densities, n, between 1.8 and 5.7 x 10^{10} cm^-2, we find maxima in resonance peak frequency, f_pk,…
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The insulator terminating the fractional quantum Hall series at low Landau level filling νis generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is interpreted as a WC pinning mode. Systematically studying the resonance in a high quality sample for carrier densities, n, between 1.8 and 5.7 x 10^{10} cm^-2, we find maxima in resonance peak frequency, f_pk, vs magnetic field, B. L, the domain size, or correlation length of Wigner crystalline order, is calculated from f_pk. For each n, L vs νtends at low νtoward a straight line with intercept; the linear fit is accurate over as much as a factor of 5 range of ν. We interpret the striking linear behavior as due to B compressing the electron wavefunctions, to alter the effective electron-impurity interaction.
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Submitted 3 April, 2002; v1 submitted 3 April, 2002;
originally announced April 2002.
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Giant microwave photoresistance of two-dimensional electron gas
Authors:
P. D. Ye,
L. W. Engel,
D. C. Tsui,
J. A. Simmons,
J. R. Wendt,
G. A. Vawter,
J. L. Reno
Abstract:
We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find an unprecedented, giant relative photoresistance (ΔR)/R of up to 250 percent. The…
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We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find an unprecedented, giant relative photoresistance (ΔR)/R of up to 250 percent. The photoresistance is apparently proportional to the square root of applied power, and disappears as the temperature is increased.
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Submitted 9 June, 2001;
originally announced June 2001.
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High Magnetic Field Microwave Conductivity of 2D Electrons in an Array of Antidots
Authors:
P. D. Ye,
L. W. Engel,
D. C. Tsui,
J. A. Simmons,
J. R. Wendt,
G. A. Vawter,
J. L. Reno
Abstract:
We measure the high magnetic field ($B$) microwave conductivity, Re$σ_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$σ_{xx}$ vs frequency ($f$) increases strongly in the regime of the fractional quantum Hall effect series, with Landau filling $1/3<ν<2/3$. At microwave $f$, Re$σ_{xx}$ vs $B$ exhibits a broad peak centered around $ν=1/2$. On the peak, the 10 GHz Re…
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We measure the high magnetic field ($B$) microwave conductivity, Re$σ_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$σ_{xx}$ vs frequency ($f$) increases strongly in the regime of the fractional quantum Hall effect series, with Landau filling $1/3<ν<2/3$. At microwave $f$, Re$σ_{xx}$ vs $B$ exhibits a broad peak centered around $ν=1/2$. On the peak, the 10 GHz Re$σ_{xx}$ can exceed its dc-limit value by a factor of 5. This enhanced microwave conductivity is unobservable for temperature $T \gtrsim 0.5$ K, and grows more pronounced as $T$ is decreased. The effect may be due to excitations supported by the antidot edges, but different from the well-known edge magnetoplasmons.
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Submitted 6 March, 2001;
originally announced March 2001.
