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Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface
Authors:
L. Liang,
J. Shan,
Q. H. Chen,
J. M. Lu,
G. R. Blake,
T. T. M. Palstra,
G. E. W. Bauer,
B. J. van Wees,
J. T. Ye
Abstract:
We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic ga…
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We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.
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Submitted 19 August, 2018;
originally announced August 2018.
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Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating
Authors:
L. Liang,
Q. H. Chen,
J. M. Lu,
W. Talsma,
J. Shan,
G. R. Blake,
T. T. M. Palstra,
J. T. Ye
Abstract:
Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible electrical switching of ferromagnetic (FM) states in platinum (Pt) thin films by introducing paramagnetic ionic liquid (PIL) as the gating media. The paramagnetic ioni…
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Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible electrical switching of ferromagnetic (FM) states in platinum (Pt) thin films by introducing paramagnetic ionic liquid (PIL) as the gating media. The paramagnetic ionic gating controls the movement of ions with magnetic moments, which induces itinerant ferromagnetism on the surface of Pt films with large coercivity and perpendicular anisotropy mimicking the ideal two-dimensional Ising-type FM state. The electrical transport of the induced FM state shows Kondo effect at low temperature suggesting spatially separated coexistence of Kondo scattering beneath the FM interface. The tunable FM state indicates that paramagnetic ionic gating could serve as a versatile method to induce rich transport phenomena combining field effect and magnetism at PIL-gated interfaces.
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Submitted 9 April, 2018; v1 submitted 12 February, 2018;
originally announced February 2018.
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A full superconducting dome of strong Ising protection in gated monolayer WS2
Authors:
J. M. Lu,
O. Zheliuk,
Q. H. Chen,
I. Leermakers,
N. E. Hussey,
U. Zeitler,
J. T. Ye
Abstract:
Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as higher transition temperature and stronger critical field. Nevertheless, besides being air unstable, weak tunability in these intrinsically metallic monolayers has posed a severe limitation in exploring monolayer superconductivity, hence hindering possible appli…
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Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as higher transition temperature and stronger critical field. Nevertheless, besides being air unstable, weak tunability in these intrinsically metallic monolayers has posed a severe limitation in exploring monolayer superconductivity, hence hindering possible applications in electronic devices. Using field effect gating, we prepared monolayer superconductivity in easily accessible CVD-grown WS2, a typical ambient stable semiconducting transition metal dichalcogenide (TMD). Here, we present a complete set of competitive electronic phases over an unprecedented range from band insulator, superconductor, to an unexpected re-entrant insulator. Throughout the superconducting dome, the Cooper pair spin is pinned by a strong internal spin-orbit interaction, making this material arguably the most resilient superconductor in a magnetic field. The re-entrant insulating state at positive high gating voltages is plausibly attributed to localization induced by the characteristically weak screening of the monolayer, providing the key insight into many dome-like superconducting phases observed in field induced quasi-2D superconductors.
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Submitted 18 March, 2017;
originally announced March 2017.
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Two Dimensional Ising Superconductivity in Gated MoS$_{2}$
Authors:
J. M. Lu,
O. Zeliuk,
I. Leermakers,
Noah F. Q. Yuan,
U. Zeitler,
K. T. Law,
J. T. Ye
Abstract:
The Zeeman effect, which is usually considered to be detrimental to superconductivity, can surprisingly protect the superconducting states created by gating a layered transition metal dichalcogenide. This effective Zeeman field, which is originated from intrinsic spin orbit coupling induced by breaking in-plane inversion symmetry, can reach nearly a hundred Tesla in magnitude. It strongly pins the…
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The Zeeman effect, which is usually considered to be detrimental to superconductivity, can surprisingly protect the superconducting states created by gating a layered transition metal dichalcogenide. This effective Zeeman field, which is originated from intrinsic spin orbit coupling induced by breaking in-plane inversion symmetry, can reach nearly a hundred Tesla in magnitude. It strongly pins the spin orientation of the electrons to the out-of-plane directions and protects the superconductivity from being destroyed by an in-plane external magnetic field. In magnetotransport experiments of ionic-gate MoS$_{2}$ transistors, where gating prepares individual superconducting state with different carrier do**, we indeed observe a spin- protected superconductivity by measuring an in-plane critical field $\textit{B}$$_{c2}$ far beyond the Pauli paramagnetic limit. The gating-enhanced $\textit{B}$$_{c2}$ is more than an order of magnitude larger compared to the bulk superconducting phases where the effective Zeeman field is weakened by interlayer coupling. Our study gives the first experimental evidence of an Ising superconductor, in which spins of the pairing electrons are strongly pinned by an effective Zeeman field.
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Submitted 5 August, 2015; v1 submitted 25 June, 2015;
originally announced June 2015.
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Accessing the transport properties of graphene and its multi-layers at high carrier density
Authors:
J. T. Ye,
M. F. Craciun,
M. Koshino,
S. Russo,
S. Inoue,
H. T. Yuan,
H. Shimotani,
A. F. Morpurgo,
Y. Iwasa
Abstract:
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a l…
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We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
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Submitted 22 October, 2010;
originally announced October 2010.
