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Impact of the ground-state $4f$ symmetry for anisotropic $cf$-hybridization in the heavy fermion superconductor CeNi$_{2}$Ge$_{2}$
Authors:
H. Fujiwara,
Y. Nakatani,
H. Aratani,
Y. Kanai-Nakata,
K. Yamagami,
S. Hamamoto,
T. Kiss,
A. Yamasaki,
A. Higashiya,
S. Imada,
A. Tanaka,
K. Tamasaku,
M. Yabashi,
T. Ishikawa,
A. Yasui,
H. Yamagami,
J. Miyawaki,
A. Miyake,
T. Ebihara,
Y. Saitoh,
A. Sekiyama
Abstract:
We report the ground-state symmetry of the Ce $4f$ states in the heavy fermion superconductor CeNi$_{2}$Ge$_{2}$, yielding anisotropic $cf$-hybridization between the Ce $4f$ states and conducting electrons. By analyzing linear dichroism in soft x-ray absorption and core-level hard x-ray photoemission spectra, the $4f$ symmetry is determined as $Σ$-type $Γ_{7}$, promoting predominant hybridization…
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We report the ground-state symmetry of the Ce $4f$ states in the heavy fermion superconductor CeNi$_{2}$Ge$_{2}$, yielding anisotropic $cf$-hybridization between the Ce $4f$ states and conducting electrons. By analyzing linear dichroism in soft x-ray absorption and core-level hard x-ray photoemission spectra, the $4f$ symmetry is determined as $Σ$-type $Γ_{7}$, promoting predominant hybridization with the conducting electrons originating from the Ge site. The band structures probed by the soft x-ray angle-resolved photoemission indicates that the Ge $4p$ components contribute to the band renormalization through the anisotropic hybridization effects, suggesting that the control of the electronic structures of Ge orbital gives an impact to achieve the exotic phenomena in CeNi$_{2}$Ge$_{2}$.
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Submitted 1 August, 2023;
originally announced August 2023.
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Hard x-ray photoemission study on strain effect in LaNiO$_3$ thin films
Authors:
K. Yamagami,
K. Ikeda,
A. Hariki,
Y. Zhang,
A. Yasui,
Y. Takagi,
Y. Hotta,
T. Katase,
T. Kamiya,
H. Wadati
Abstract:
The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray photoemission spectroscopy, we investigate the strain dependence of the valence states in LaNiO$_{3}$ thin films, strongly correlated perovskite TMO, grown on four substrates: LaAlO$_{3}$, (LaAlO$_{3}$)$_{0.3}$(SrAl…
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The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray photoemission spectroscopy, we investigate the strain dependence of the valence states in LaNiO$_{3}$ thin films, strongly correlated perovskite TMO, grown on four substrates: LaAlO$_{3}$, (LaAlO$_{3}$)$_{0.3}$(SrAl$_{0.5}$Ta$_{0.5}$O$_{3}$)$_{0.7}$, SrTiO$_{3}$, and DyScO$_{3}$. A Madelung potential analysis of core-level spectra suggests that the point-charge description is valid for the La ions while it breaks down for Ni and O ions due to a strong covalent bonding between the two. A clear x-ray photon-energy dependence of the valence spectra is analyzed by the density functional theory, which points to a presence of the La 5$p$ state near the Fermi level.
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Submitted 16 March, 2021;
originally announced March 2021.
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Light-enhanced gating effect at the interface of oxide heterostructure
Authors:
Neha Wadehra,
Ruchi Tomar,
Yuichi Yokoyama,
Akira Yasui,
E. Ikenaga,
H. Wadati,
Denis Maryenko,
S. Chakraverty
Abstract:
In semiconducting materials, electrostatic gating and light illumination are widely used stimuli to tune the electronic properties of the system. Here, we show a significant enhancement of photoresponse at the conducting interface of LaVO3-SrTiO3 under the simultaneous application of light and negative gate bias voltage, in comparison to their individual application. On the other hand, the LaVO3-S…
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In semiconducting materials, electrostatic gating and light illumination are widely used stimuli to tune the electronic properties of the system. Here, we show a significant enhancement of photoresponse at the conducting interface of LaVO3-SrTiO3 under the simultaneous application of light and negative gate bias voltage, in comparison to their individual application. On the other hand, the LaVO3-SrTiO3 interface remains largely insensitive to light illumination, when a positive gate bias voltage is applied. Our X-ray diffractometer, Raman spectroscopy and photoemission measurements show that unlike the LaAlO3-SrTiO3 interface, migration of oxygen vacancies is not the prime mechanism for the enhanced photoresponse. Rather, we suggest that the photoresponse of our system is intrinsic and this intrinsic mechanism is a complex interplay between band filling, electric field at the interface, strong electron interaction due to mottness of LaVO3 and modification of conducting channel width.
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Submitted 13 December, 2020;
originally announced December 2020.
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Charge correlation in V$_2$OPO$_4$ probed by hard x-ray photoemission spectroscopy
Authors:
K. Murota,
E. Pachoud,
J. P. Attfield,
R. Glaum,
T. Yasuda,
D. Ootsuki,
Y. Takagi,
A. Yasui,
D. I. Khomskii,
T. Mizokawa
Abstract:
Electronic properties of V$_2$OPO$_4$ have been investigated by means of hard x-ray photoemission spectroscopy (HAXPES) and subsequent theoretical calculations. The V 1$s$ and 2$p$ HAXPES spectra are consistent with the charge ordering of V$^{2+}$ and V$^{3+}$. The binding energy difference between the V$^{2+}$ and V$^{3+}$ components is unexpectedly large indicating large bonding-antibonding spli…
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Electronic properties of V$_2$OPO$_4$ have been investigated by means of hard x-ray photoemission spectroscopy (HAXPES) and subsequent theoretical calculations. The V 1$s$ and 2$p$ HAXPES spectra are consistent with the charge ordering of V$^{2+}$ and V$^{3+}$. The binding energy difference between the V$^{2+}$ and V$^{3+}$ components is unexpectedly large indicating large bonding-antibonding splitting between them in the final states of core level photoemission. The V 1$s$ HAXPES spectrum exhibits a charge transfer satellite which can be analyzed by configuration interaction calculations on a V$_2$O$_9$ cluster. The V 3$d$ spectral weight near the Fermi level is assigned to the 3$d$ $t_{2g}$ orbitals of the V$^{2+}$ site. The broad V 3$d$ spectral distribution is consistent with the strong hybridization between V$^{2+}$ and V$^{3+}$ in the ground state. The core level and valence band HAXPES results indicate substantial charge transfer from the V$^{2+}$ site to the V$^{3+}$ site.7 figure
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Submitted 7 June, 2020;
originally announced June 2020.
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Spin-orbital liquid in Ba$_3$CuSb$_2$O$_9$ stabilized by oxygen holes
Authors:
Kou Takubo,
Takashi Mizokawa,
Huiyuan Man,
Kohei Yamamoto,
Yujun Zhang,
Yasuyuki Hirata,
Hiroki Wadati,
Akira Yasui,
Daniel I. Khomskii,
Satoru Nakatsuji
Abstract:
Both the Jahn-Teller distortion of Cu$^{2+}$O$_6$ octahedra and magnetic ordering are absent in hexagonal Ba$_3$CuSb$_2$O$_9$ suggesting a Cu 3$d$ spin-orbital liquid state. Here, by means of resonant x-ray scattering and absorption experiment, we show that oxygen 2$p$ holes play crucial role in stabilizing this spin-orbital liquid state. These oxygen holes appear due to the "reaction" Sb$^{5+}$…
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Both the Jahn-Teller distortion of Cu$^{2+}$O$_6$ octahedra and magnetic ordering are absent in hexagonal Ba$_3$CuSb$_2$O$_9$ suggesting a Cu 3$d$ spin-orbital liquid state. Here, by means of resonant x-ray scattering and absorption experiment, we show that oxygen 2$p$ holes play crucial role in stabilizing this spin-orbital liquid state. These oxygen holes appear due to the "reaction" Sb$^{5+}$$\rightarrow$Sb$^{3+}$ $+$ two oxygen holes, with these holes being able to attach to Cu ions. The hexagonal phase with oxygen 2$p$ holes exhibits also a novel charge-orbital dynamics which is absent in the orthorhombic phase of Ba$_3$CuSb$_2$O$_9$ with Jahn-Teller distortion and Cu 3$d$ orbital order. The present work opens up a new avenue towards spin-charge-orbital entangled liquid state in transition-metal oxides with small or negative charge transfer energy.
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Submitted 17 May, 2020;
originally announced May 2020.
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Interfacial-hybridization-modified Ir Ferromagnetism and Electronic Structure in LaMnO$_3$/SrIrO$_3$ Superlattices
Authors:
Yujun Zhang,
Yong Zheng Luo,
Liang Wu,
Motohiro Suzuki,
Yasuyuki Hirata,
Kohei Yamagami,
Kou Takubo,
Keisuke Ikeda,
Kohei Yamamoto,
Akira Yasui,
Naomi Kawamura,
Chun Lin,
Keisuke Koshiishi,
Xin Liu,
**xing Zhang,
Yasushi Hotta,
X. Renshaw Wang,
Atsushi Fujimori,
Yuanhua Lin,
Cewen Nan,
Lei Shen,
Hiroki Wadati
Abstract:
Artificially fabricated 3$d$/5$d$ superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3$d$-5$d$ coupling, whose mechanism remains mostly unexplored. In this work we investigated the mechanism of interfacial coupling in LaMnO$_3$/SrIrO$_3$ SLs by several spectroscopic approaches. Hard x-ray absorption, magnetic circular dichro…
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Artificially fabricated 3$d$/5$d$ superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3$d$-5$d$ coupling, whose mechanism remains mostly unexplored. In this work we investigated the mechanism of interfacial coupling in LaMnO$_3$/SrIrO$_3$ SLs by several spectroscopic approaches. Hard x-ray absorption, magnetic circular dichroism and photoemission spectra evidence the systematic change of the Ir ferromagnetism and the electronic structure with the change of the SL repetition period. First-principles calculations further reveal the mechanism of the SL-period dependence of the interfacial electronic structure and the local properties of the Ir moments, confirming that the formation of Ir-Mn molecular orbital is responsible for the interfacial coupling effects. The SL-period dependence of the ratio between spin and orbital components of the Ir magnetic moments can be attributed to the realignment of electron spin during the formation of the interfacial molecular orbital. Our results clarify the nature of interfacial coupling in this prototypical 3$d$/5$d$ SL system and the conclusion will shed light on the study of other strongly correlated and spin-orbit coupled oxide hetero-interfaces.
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Submitted 14 April, 2020;
originally announced April 2020.
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Hard and soft x-ray photoemission spectroscopy study of the new Kondo system SmO thin film
Authors:
Shoya Sakamoto,
Kenichi Kaminaga,
Daichi Oka,
Ryu Yukawa,
Masafumi Horio,
Yuichi Yokoyama,
Kohei Yamamoto,
Kou Takubo,
Yosuke Nonaka,
Keisuke Koshiishi,
Masaki Kobayashi,
Arata Tanaka,
Akira Yasui,
Eiji Ikenaga,
Hiroki Wadati,
Hiroshi Kumigashira,
Tomoteru Fukumura,
Atsushi Fujimori
Abstract:
SmO thin film is a new Kondo system showing a resistivity upturn around 10 K and was theoretically proposed to have a topologically nontrivial band structure. We have performed hard x-ray and soft x-ray photoemission spectroscopy to elucidate the electronic structure of SmO. From the Sm 3$d$ core-level spectra, we have estimated the valence of Sm to be $\sim$2.96, proving that the Sm has a mixed v…
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SmO thin film is a new Kondo system showing a resistivity upturn around 10 K and was theoretically proposed to have a topologically nontrivial band structure. We have performed hard x-ray and soft x-ray photoemission spectroscopy to elucidate the electronic structure of SmO. From the Sm 3$d$ core-level spectra, we have estimated the valence of Sm to be $\sim$2.96, proving that the Sm has a mixed valence. The valence-band photoemission spectra exhibit a clear Fermi edge originating from the Sm 5$d$-derived band. The present finding is consistent with the theory suggesting a possible topological state in SmO and show that rare-earth monoxides or their heterostructures can be a new playground for the interplay of strong electron correlation and spin-orbit coupling.
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Submitted 14 April, 2020;
originally announced April 2020.
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Photoemission and Dynamical Mean Field Theory Study of Electronic Correlation in a $t_{2g}^{5}$ Metal of SrRhO$_{3}$ Thin Film
Authors:
Yujun Zhang,
Minjae Kim,
Jernej Mravlje,
Changhee Sohn,
Yongseong Choi,
Joerg Strempfer,
Yasushi Hotta,
Akira Yasui,
John Nichols,
Ho Nyung Lee,
Hiroki Wadati
Abstract:
Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated metals. A recent publication (Phys. Rev. B 95, 245121(2017)) on epitaxial SrRhO$_3$ thin films unexpectedly reported a bad-metallic behavior and suggested the occurrence of antiferromagnetism below 100 K. We studied this SrR…
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Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated metals. A recent publication (Phys. Rev. B 95, 245121(2017)) on epitaxial SrRhO$_3$ thin films unexpectedly reported a bad-metallic behavior and suggested the occurrence of antiferromagnetism below 100 K. We studied this SrRhO$_3$ thin film by hard x-ray photoemission spectroscopy and found a very small density of states (DOS) at Fermi level, which is consistent with the reported bad-metallic behavior. However, this negligible DOS persists up to room temperature, which contradicts with the explanation of antiferromagnetic transition at around 100 K. We also employed electronic structure calculations within the framework of density functional theory and dynamical mean-field theory. In contrast to the experimental results, our calculations indicate metallic behavior of both bulk SrRhO$_3$ and the SrRhO$_3$ thin film. The thin film exhibits stronger correlation effects than the bulk, but the correlation effects are not sufficient to drive a transition to an insulating state. The calculated uniform magnetic susceptibility is substantially larger in the thin film than that in the bulk. The role of SOC was also investigated and only a moderate modulation of the electronic structure was observed. Hence SOC is not expected to play an important role for electronic correlation in SrRhO$_3$.
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Submitted 22 July, 2019;
originally announced July 2019.
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Nature of carrier do** in T'-La1.8-xEu0.2SrxCuO4 studied by X-Ray Photoemission and Absorption Spectroscopy
Authors:
Chun Lin,
Masafumi Horio,
Takayuki Kawamata,
Shin Saito,
Keisuke Koshiishi,
Shoya Sakamoto,
Yujun Zhang,
Kohei Yamamoto,
Keisuke Ikeda,
Yasuyuki Hirata,
Kou Takubo,
Hiroki Wadati,
Akira Yasui,
Yasumasa Takagi,
Eiji Ikenaga,
Tadashi Adachi,
Yoji Koike,
Atsushi Fujimori
Abstract:
Recently, hole-doped superconducting cuprates with the T'-structure La1.8-xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced T0-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on t…
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Recently, hole-doped superconducting cuprates with the T'-structure La1.8-xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced T0-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on the electron-doped side of the Mott insulator or that the charge-transfer gap is collapsed in the parent compound.
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Submitted 14 July, 2019;
originally announced July 2019.
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Bent Electronic Band Structure Induced by Ferroelectric Polarization
Authors:
Norihiro Oshime,
Jun Kano,
Eiji Ikenaga,
Shintaro Yasui,
Yosuke Hamasaki,
Sou Yasuhara,
Satoshi Hinokuma,
Naoshi Ikeda,
Mitsuru Itoh,
Takayoshi Yokoya,
Tatsuo Fujii,
Akira Yasui
Abstract:
Bent band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction and photovoltaic devices. This report presents experimental evidence for ferroelectric band bending, which was observed in the depth profiles of atomic orbitals of angle-resolved hard x-ray photoemission spectra of ferroelectric BaTiO3 th…
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Bent band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction and photovoltaic devices. This report presents experimental evidence for ferroelectric band bending, which was observed in the depth profiles of atomic orbitals of angle-resolved hard x-ray photoemission spectra of ferroelectric BaTiO3 thin films. The ferroelectric bent band structure is separated into three depth regions; the shallowest and deepest regions are slightly modulated by the screening effect at surface and interface, respectively, and the intermediate region exhibits the pure ferroelectric effect. In the pure ferroelectric bent band structure, we found that the binding energy of outer shell electrons shows a larger shift than that of inner shell electrons, and that the difference in energy shift is correlated with the atomic configuration of the soft phonon mode. These findings could lead to a simple understanding of the origin of electric polarization.
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Submitted 5 November, 2017;
originally announced November 2017.
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Electronic Structure of Ce-Doped and -Undoped Nd$_2$CuO$_4$ Superconducting Thin Films Studied by Hard X-ray Photoemission and Soft X-ray Absorption Spectroscopy
Authors:
M. Horio,
Y. Krockenberger,
K. Yamamoto,
Y. Yokoyama,
K. Takubo,
Y. Hirata,
S. Sakamoto,
K. Koshiishi,
A. Yasui,
E. Ikenaga,
S. Shin,
H. Yamamoto,
H. Wadati,
A. Fujimori
Abstract:
In order to realize superconductivity in cuprates with the T'-type structure, not only chemical substitution (Ce do**) but also post-growth reduction annealing is necessary. In the case of thin films, however, well-designed reduction annealing alone without Ce do** can induce superconductivity in the T'-type cuprates. In order to unveil the origin of superconductivity in the Ce-undoped T'-type…
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In order to realize superconductivity in cuprates with the T'-type structure, not only chemical substitution (Ce do**) but also post-growth reduction annealing is necessary. In the case of thin films, however, well-designed reduction annealing alone without Ce do** can induce superconductivity in the T'-type cuprates. In order to unveil the origin of superconductivity in the Ce-undoped T'-type cuprates, we have performed bulk-sensitive hard x-ray photoemission and soft x-ray absorption spectroscopies on superconducting and non-superconducting Nd$_{2-x}$Ce$_x$CuO$_4$ ($x=$ 0, 0.15, and 0.19) thin films. By post-growth annealing, core-level spectra exhibited dramatic changes, which we attributed to the enhancement of core-hole screening in the CuO$_2$ plane and the shift of chemical potential along with changes in the band filling. The result suggests that the superconducting Nd$_2$CuO$_4$ film is doped with electrons and that the electronic states are similar to those of Ce-doped superconductors.
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Submitted 20 June, 2018; v1 submitted 24 October, 2017;
originally announced October 2017.
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Electronic Structures of Ferromagnetic CeAgSb$_2$:Soft X-ray Absorption, Magnetic Circular Dichroism and Angle-Resolved Photoemission Spectroscopies
Authors:
Yuji Saitoh,
Hidenori Fujiwara,
Takashi Yamaguchi,
Yasuhiro Nakatani,
Takeo Mori,
Hiroto Fuchimoto,
Takayuki Kiss,
Akira Yasui,
Jun Miyawaki,
Shin Imada,
Hiroshi Yamagami,
Takao Ebihara,
Akira Sekiyama
Abstract:
We report a combined study for the electronic structures of ferromagnetic CeAgSb$_2$ using soft X-ray absorption (XAS), magnetic circular dichroism (XMCD), and angle-resolved photoemission (ARPES) spectroscopies. The Ce $M_{4, 5}$ XAS spectra show very small satellite structures, reflecting a strongly localized character of the Ce $4f$ electrons. The linear dichroism effects in the Ce $M_{4, 5}$ X…
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We report a combined study for the electronic structures of ferromagnetic CeAgSb$_2$ using soft X-ray absorption (XAS), magnetic circular dichroism (XMCD), and angle-resolved photoemission (ARPES) spectroscopies. The Ce $M_{4, 5}$ XAS spectra show very small satellite structures, reflecting a strongly localized character of the Ce $4f$ electrons. The linear dichroism effects in the Ce $M_{4, 5}$ XAS spectra demonstrate the ground state Ce $4f$ symmetry of $Γ{_6}$, the spatial distribution of which is directed along the $c$-axis. The XMCD results give support to the picture of local-moment magnetism in CeAgSb$_2$. Moreover it is also found that the theoretical band dispersions for LaAgSb$_2$ provides better description of the ARPES band structures than those for CeAgSb$_2$. Nevertheless, ARPES spectra at the Ce $3d$-$4f$ resonance show the momentum dependence for the intensity ratio between Ce $4f^{1}_{5/2}$ and $4f^{1}_{7/2}$ peaks in a part of the Brillouin zone, suggesting the non-negligible momentum dependent hybridization effect between the Ce $4f$ and the conduction electrons. This is associated with the moderate mass enhancement in CeAgSb$_2$.
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Submitted 8 September, 2016;
originally announced September 2016.
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Electronic structures of ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ studied by angle-resolved photoelectron spectroscopy
Authors:
Shin-ichi Fujimori,
Takuo Ohkochi,
Ikuto Kawasaki,
Akira Yasui,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these…
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The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $\mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_\mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $\mathrm{U}~5f$ and $\mathrm{Co}~3d$ states in $\mathrm{UCoGe}$ were found by the $\mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $\mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties.
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Submitted 7 May, 2015;
originally announced May 2015.
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Probing Strongly Correlated 4f-Orbital Symmetry of the Ground State in Yb Compounds by Linear Dichroism in Core-Level Photoemission
Authors:
Takeo Mori,
Satoshi Kitayama,
Yuina Kanai,
Sho Naimen,
Hidenori Fujiwara,
Atsushi Higashiya,
Kenji Tamasaku,
Arata Tanaka,
Kensei Terashima,
Shin Imada,
Akira Yasui,
Yuji Saitoh,
Kohei Yamagami,
Kohei Yano,
Taiki Matsumoto,
Takayuki Kiss,
Makina Yabashi,
Tetsuya Ishikawa,
Shigemasa Suga,
Yoshichika Onuki,
Takao Ebihara,
Akira Sekiyama
Abstract:
We show that the strongly correlated 4f-orbital symmetry of the ground state is revealed by linear dichroism in core-level photoemission spectra as we have discovered for YbRh2Si2 and YbCu2Si2. Theoretical analysis tells us that the linear dichroism reflects the anisotropic charge distributions resulting from crystalline electric field. We have successfully determined the ground-state 4f symmetry…
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We show that the strongly correlated 4f-orbital symmetry of the ground state is revealed by linear dichroism in core-level photoemission spectra as we have discovered for YbRh2Si2 and YbCu2Si2. Theoretical analysis tells us that the linear dichroism reflects the anisotropic charge distributions resulting from crystalline electric field. We have successfully determined the ground-state 4f symmetry for both compounds from the polarization-dependent angle-resolved core-level spectra at a low temperature well below the first excitation energy. The excited-state symmetry is also probed by temperature dependence of the linear dichroism where the high measuring temperatures are of the order of the crystal-field-splitting energies.
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Submitted 13 October, 2014;
originally announced October 2014.
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Itinerant magnetism in URhGe revealed by angle resolved photoelectron spectroscopy
Authors:
Shin-ichi Fujimori,
Ikuto Kawasaki,
Akira Yasui,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshichika Onuki
Abstract:
The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure cal…
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The electronic structure of the ferromagnetic superconductor URhGe in the paramagnetic phase has been studied by angle-resolved photoelectron spectroscopy using soft x rays (hn=595-700 eV). Dispersive bands with large contributions from U 5f states were observed in the ARPES spectra, and form Fermi surfaces. The band structure in the paramagnetic phase is partly explained by the band-structure calculation treating all U 5f electrons as being itinerant, suggesting that an itinerant description of U 5f states is a good starting point for this compound. On the other hand, there are qualitative disagreements especially in the band structure near the Fermi level (E_B < 0.5 eV). The experimentally observed bands are less dispersive than the calculation, and the shape of the Fermi surface is different from the calculation. The changes in spectral functions due to the ferromagnetic transition were observed in bands near the Fermi level, suggesting that the ferromagnetism in this compound has an itinerant origin.
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Submitted 2 April, 2014;
originally announced April 2014.
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Direct k-space map** of the electronic structure in an oxide-oxide interface
Authors:
G. Berner,
M. Sing,
H. Fujiwara,
A. Yasui,
Y. Saitoh,
A. Yamasaki,
Y. Nishitani,
A. Sekiyama,
N. Pavlenko,
T. Kopp,
C. Richter,
J. Mannhart,
S. Suga,
R. Claessen
Abstract:
The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron s…
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The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir.
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Submitted 18 June, 2013; v1 submitted 13 January, 2013;
originally announced January 2013.
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Electronic Structure of Heavy Fermion Uranium Compounds Studied by Core-Level Photoelectron Spectroscopy
Authors:
Shin-ichi Fujimori,
Takuo Ohkochi,
Ikuto Kawasaki,
Akira Yasui,
Yukiharu Takeda,
Tetsuo Okane,
Yuji Saitoh,
Atsushi Fujimori,
Hiroshi Yamagami,
Yoshinori Haga,
Etsuji Yamamoto,
Yoshifumi Tokiwa,
Shugo Ikeda,
Takashi Sugai,
Hitoshi Ohkuni,
Noriaki Kimura,
Yoshichika Onuki
Abstract:
High-energy-resolution core-level and valence-band photoelectron spectroscopic studies were performed for the heavy Fermion uranium compounds UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, UPd2Al3, and UPt3 as well as typical localized and itinerant uranium compounds to understand the relationship between the uranium valence state and their core-level spectral line shapes. In addition to the main line and…
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High-energy-resolution core-level and valence-band photoelectron spectroscopic studies were performed for the heavy Fermion uranium compounds UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, UPd2Al3, and UPt3 as well as typical localized and itinerant uranium compounds to understand the relationship between the uranium valence state and their core-level spectral line shapes. In addition to the main line and high-binding energy satellite structure recognized in the core-level spectra of uranium compounds, a shoulder structure on the lower binding energy side of the main lines of localized and nearly localized uranium compounds was also found. The spectral line shapes show a systematic variation depending on the U 5f electronic structure. The core-level spectra of UGe2, UCoGe, URhGe, URu2Si2, and UNi2Al3 are rather similar to those of itinerant compounds, suggesting that U 5f electrons in these compounds are well hybridized with ligand states. On the other hand, the core-level spectra of UPd2Al3 and UPt3 show considerably different spectral line shapes from those of the itinerant compounds, suggesting that U 5f electrons in UPd2Al3 and UPt3 are less hybridized with ligand states, leading to the correlated nature of U 5f electrons in these compounds. The dominant final state characters in their core-level spectra suggest that the numbers of 5f electrons in UGe2, UCoGe, URhGe, URu2Si2, UNi2Al3, and UPd2Al3 are close to but less than three, while that of UPt3 is close to two rather than to three.
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Submitted 31 October, 2011;
originally announced October 2011.
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4f-derived Fermi Surfaces of CeRu2(Si[1-x]Ge[x])2 near the Quantum Critical Point: Resonant Soft X-ray ARPES Study
Authors:
T. Okane,
T. Ohkochi,
Y. Takeda,
S. -i. Fujimori,
A. Yasui,
Y. Saitoh,
H. Yamagami,
A. Fujimori,
Y. Matsumoto,
M. Sugi,
N. Kimura,
T. Komatsubara,
H. Aoki
Abstract:
Angle-resolved photoelectron spectroscopy in the Ce 3d-4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4$f$ electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character wa…
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Angle-resolved photoelectron spectroscopy in the Ce 3d-4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4$f$ electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character was observed in the band structures and the Fermi surfaces of CeRu2Si2 and CeRu2(Si0.82Ge0.18)2, consequently indicating a delocalized nature of the 4$f$ electrons in both compounds. The absence of Fermi surface reconstruction across the critical composition suggests that SDW quantum criticality is more appropriate than local quantum criticality in CeRu2(Si[1-x]Ge[x])2.
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Submitted 17 June, 2009;
originally announced June 2009.
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Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems
Authors:
H. J. Im,
T. Ito,
H. Miyazaki,
S. Kimura,
Y. S. Kwon,
Y. Saitoh,
S. -I. Fujimori,
A. Yasui,
H. Yamagami
Abstract:
Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}$ is smaller than that of CeCoGe$_{1.2}$Si…
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Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}$ is smaller than that of CeCoGe$_{1.2}$Si$_{0.8}$, indicating the evolution of the Ce 4$f$-Fermi surface with the increase of the hybridization strength. In comparision with LDA calculation, the Fermi surface variation cannot be understood even though the overall electronic structure are roughly explained, indicating the importance of strong correlation effects. We also discuss the relation between the Ce 4$f$-Fermi surface variation and the Kondo peaks.
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Submitted 14 October, 2014; v1 submitted 7 April, 2009;
originally announced April 2009.
