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arXiv:2401.04793
[pdf]
cond-mat.mtrl-sci
cond-mat.mes-hall
cond-mat.str-el
cond-mat.supr-con
quant-ph
2024 Roadmap on Magnetic Microscopy Techniques and Their Applications in Materials Science
Authors:
D. V. Christensen,
U. Staub,
T. R. Devidas,
B. Kalisky,
K. C. Nowack,
J. L. Webb,
U. L. Andersen,
A. Huck,
D. A. Broadway,
K. Wagner,
P. Maletinsky,
T. van der Sar,
C. R. Du,
A. Yacoby,
D. Collomb,
S. Bending,
A. Oral,
H. J. Hug,
A. -O. Mandru,
V. Neu,
H. W. Schumacher,
S. Sievers,
H. Saito,
A. A. Khajetoorians,
N. Hauptmann
, et al. (28 additional authors not shown)
Abstract:
Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of…
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Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of major importance to understand the material responses and qualify them for specific applications. In this roadmap, we aim to cover a broad portfolio of techniques to perform nano- and microscale magnetic imaging using SQUIDs, spin center and Hall effect magnetometries, scanning probe microscopies, x-ray- and electron-based methods as well as magnetooptics and nanoMRI. The roadmap is aimed as a single access point of information for experts in the field as well as the young generation of students outlining prospects of the development of magnetic imaging technologies for the upcoming decade with a focus on physics, materials science, and chemistry of planar, 3D and geometrically curved objects of different material classes including 2D materials, complex oxides, semi-metals, multiferroics, skyrmions, antiferromagnets, frustrated magnets, magnetic molecules/nanoparticles, ionic conductors, superconductors, spintronic and spinorbitronic materials.
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Submitted 9 January, 2024;
originally announced January 2024.
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Discovery of a Bloch point quadrupole constituting hybrid topological strings
Authors:
Fehmi Sami Yasin,
Jan Masell,
Yoshio Takahashi,
Tetsuya Akashi,
Norio Baba,
Kosuke Karube,
Daisuke Shindo,
Takahisa Arima,
Yasujiro Taguchi,
Yoshinori Tokura,
Toshiaki Tanigaki,
Xiuzhen Yu
Abstract:
Topological magnetic (anti)skrymions are robust string-like objects heralded as potential components in next-generation topological spintronics devices due to their manipulability via low-energy stimuli such as magnetic fields, heat, and electric/thermal current. While these two-dimensional (2D) topological objects are widely studied, intrinsically three-dimensional (3D) electron-spin real-space t…
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Topological magnetic (anti)skrymions are robust string-like objects heralded as potential components in next-generation topological spintronics devices due to their manipulability via low-energy stimuli such as magnetic fields, heat, and electric/thermal current. While these two-dimensional (2D) topological objects are widely studied, intrinsically three-dimensional (3D) electron-spin real-space topology remains less explored despite its prevalence in bulky magnets. Here, we capture the 3D structure of antiskyrmions in a single-crystal, precision-doped (Fe_{0.63}Ni_{0.3}Pd_{0.07})_{3}P lamellae using holographic vector field electron tomography at room temperature and zero field. Our measurements reveal hybrid string-like solitons composed of skyrmions with topological number W = -1 on the lamellae's surfaces and an antiskyrmion (W = +1) connecting them. High resolution images uncover a Bloch point (BP) quadrupole (four magnetic (anti)monopoles) positioned along the rectangular antiskyrmion's four corners (Bloch lines), which enable the observed lengthwise topological transitions. Furthermore, we calculate and compare the energy densities of hybrid strings with ideal (anti)skyrmion strings using micromagnetic simulations, which suggest that this composite (anti)BP structure stabilizes via the subtle interplay between the magnetostatic interaction and anisotropic Dzyaloshinskii-Moriya interaction. The discovery of these hybrid spin textures enables topological tunabilty, a tunable topological Hall effect, and the suppression of skyrmion Hall motion, disrupting existing paradigms within spintronics.
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Submitted 27 August, 2023;
originally announced August 2023.
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Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Authors:
Vaishnavi Kateel,
Viola Krizakova,
Siddharth Rao,
Kaiming Cai,
Mohit Gupta,
Maxwel Gama Monteiro,
Farrukh Yasin,
Bart Sorée,
Johan De Boeck,
Sebastien Couet,
Pietro Gambardella,
Gouri Sankar Kar,
Kevin Garello
Abstract:
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications.…
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Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by sha** the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for develo** purely current-driven SOT systems.
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Submitted 6 May, 2023;
originally announced May 2023.
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Tunable Néel-Bloch magnetic twists in Fe3GeTe2 with van der Waals structure
Authors:
Licong Peng,
Fehmi S. Yasin,
Tae-Eon Park,
Sung Jong Kim,
Xichao Zhang,
Takuro Nagai,
Koji Kimoto,
Seonghoon Woo,
Xiuzhen Yu
Abstract:
The advent of ferromagnetism in two-dimensional (2D) van der Waals (vdW) magnets has stimulated high interest in exploring topological magnetic textures, such as skyrmions for use in future skyrmion-based spintronic devices. To engineer skyrmions in vdW magnets by transforming Bloch-type magnetic bubbles into Néel-type skyrmions, the heterostructure of heavy metal/vdW magnetic thin film has been m…
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The advent of ferromagnetism in two-dimensional (2D) van der Waals (vdW) magnets has stimulated high interest in exploring topological magnetic textures, such as skyrmions for use in future skyrmion-based spintronic devices. To engineer skyrmions in vdW magnets by transforming Bloch-type magnetic bubbles into Néel-type skyrmions, the heterostructure of heavy metal/vdW magnetic thin film has been made to induce interfacial Dzyaloshinskii-Moriya interaction (DMI). However, the unambiguous identification of the magnetic textures inherent to vdW magnets, e.g., whether the magnetic twists (skyrmions/domain walls) are Néel- or Bloch-type, is unclear. Here we demonstrate that the Néel- or Bloch-type magnetic twists can be tuned in the vdW magnet Fe3GeTe2 (FGT) with/without interfacial DMI. We use an in-plane magnetic field to align the modulation wavevector q of the magnetizations in order to distinguish the Néel- or Bloch-type magnetic twists. We observe that q is perpendicular to the in-plane field in the heterostructure (Pt/oxidized-FGT/FGT/oxidized-FGT), while q aligns at a rotated angle with respect to the field direction in the thin plate by thinning bulk FGT. We find that the aligned domain wall twists hold fan-like modulations, coinciding qualitatively with our computational results.
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Submitted 2 May, 2021;
originally announced May 2021.
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Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
Authors:
Y. C. Wu,
K. Garello,
W. Kim,
M. Gupta,
M. Perumkunnil,
V. Kateel,
S. Couet,
R. Carpenter,
S. Rao,
S. Van Beek,
K. K. Vudya Sethu,
F. Yasin,
D. Crotti,
G. S. Kar
Abstract:
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propo…
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Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient (ξ) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm devices used in this study. Further, the device-scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes.
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Submitted 19 April, 2021;
originally announced April 2021.
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Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet
Authors:
Yukako Fujishiro,
Naoya Kanazawa,
Ryosuke Kurihara,
Hiroaki Ishizuka,
Tomohiro Hori,
Fehmi Sami Yasin,
Xiuzhen Yu,
Atsushi Tsukazaki,
Masakazu Ichikawa,
Masashi Kawasaki,
Naoto Nagaosa,
Masashi Tokunaga,
Yoshinori Tokura
Abstract:
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AH…
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The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle respectively reach 40,000 Ω-1cm-1 and 18 % in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally-excited spin-clusters with scalar spin chirality, which is corroborated by the temperature-magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.
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Submitted 23 November, 2020;
originally announced November 2020.
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Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
Authors:
Eva Grimaldi,
Viola Krizakova,
Giacomo Sala,
Farrukh Yasin,
Sébastien Couet,
Gouri Sankar Kar,
Kevin Garello,
Pietro Gambardella
Abstract:
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetiza…
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Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices.
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Submitted 17 November, 2020;
originally announced November 2020.
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Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Authors:
K. Garello,
F. Yasin,
H. Hody,
S. Couet,
L. Souriau,
S. H. Sharifi,
J. Swerts,
R. Carpenter,
S. Rao,
W. Kim,
J. Wu,
K. K. V. Sethu,
M. Pak,
N. Jossart,
D. Crotti,
A. Furnémont,
G. S. Kar
Abstract:
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our con…
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We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.
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Submitted 30 August, 2019; v1 submitted 18 July, 2019;
originally announced July 2019.
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Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures
Authors:
Tae-Eon Park,
Licong Peng,
**ghua Liang,
Ali Hallal,
Fehmi Sami Yasin,
Xichao Zhang,
Sung Jong Kim,
Kyung Mee Song,
Kwangsu Kim,
Markus Weigand,
Gisela Schuetz,
Simone Finizio,
Joerg Raabe,
Karin Garcia,
**g Xia,
Yan Zhou,
Motohiko Ezawa,
Xiaoxi Liu,
Joonyeon Chang,
Hyun Cheol Koo,
Young Duck Kim,
Mairbek Chshiev,
Albert Fert,
Hongxin Yang,
Xiuzhen Yu
, et al. (1 additional authors not shown)
Abstract:
Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy…
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Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy, leading to the formation of topological magnetic textures such as skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here, we report the experimental observation of Néel-type chiral magnetic skyrmions and their lattice (SkX) formation in a vdW ferromagnet Fe3GeTe2 (FGT). We demonstrate the ability to drive individual skyrmion by short current pulses along a vdW heterostructure, FGT/h-BN, as highly required for any skyrmion-based spintronic device. Using first principle calculations supported by experiments, we unveil the origin of DMI being the interfaces with oxides, which then allows us to engineer vdW heterostructures for desired chiral states. Our finding opens the door to topological spin textures in the 2D vdW magnet and their potential device application.
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Submitted 25 June, 2020; v1 submitted 2 July, 2019;
originally announced July 2019.
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SOT-MRAM 300mm integration for low power and ultrafast embedded memories
Authors:
K. Garello,
F. Yasin,
S. Couet,
L. Souriau,
J. Swerts,
S. Rao,
S. Van Beek,
W. Kim,
E. Liu,
S. Kundu,
D. Tsvetanova,
N. Jossart,
K. Croes,
E. Grimaldi,
M. Baumgartner,
D. Crotti,
A. Furnémont,
P. Gambardella,
G. S. Kar
Abstract:
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
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Submitted 22 October, 2018;
originally announced October 2018.
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Probing Light Atoms at Sub-nanometer Resolution: Realization of Scanning Transmission Electron Microscope Holography
Authors:
Fehmi S. Yasin,
Tyler R. Harvey,
Jordan J. Chess,
Jordan S. Pierce,
Colin Ophus,
Peter Ercius,
Benjamin J. McMorran
Abstract:
Atomic resolution imaging in transmission electron microscopy (TEM) and scanning TEM (STEM) of light elements in electron-transparent materials has long been a challenge. Biomolecular materials, for example, are rapidly altered when illuminated with electrons. These issues have driven the development of TEM and STEM techniques that enable the structural analysis of electron beam-sensitive and weak…
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Atomic resolution imaging in transmission electron microscopy (TEM) and scanning TEM (STEM) of light elements in electron-transparent materials has long been a challenge. Biomolecular materials, for example, are rapidly altered when illuminated with electrons. These issues have driven the development of TEM and STEM techniques that enable the structural analysis of electron beam-sensitive and weakly scattering nano-materials. Here, we demonstrate such a technique, STEM holography, capable of absolute phase and amplitude object wave measurement with respect to a vacuum reference wave. We use an amplitude-dividing nanofabricated grating to prepare multiple spatially separated electron diffraction probe beams focused at the sample plane, such that one beam transmits through the specimen while the others pass through vacuum. We raster-scan the diffracted probes over the region of interest. We configure the post specimen imaging system of the microscope to diffraction mode, overlap** the probes to form an interference pattern at the detector. Using a fast-readout, direct electron detector, we record and analyze the interference fringes at each position in a 2D raster scan to reconstruct the complex transfer function of the specimen, t(x). We apply this technique to image a standard target specimen consisting of gold nanoparticles on a thin amorphous carbon substrate, and demonstrate 2.4 angstrom resolution phase images. We find that STEM holography offers higher phase-contrast of the amorphous material while maintaining Au atomic lattice resolution when compared with high angle annular dark field STEM.
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Submitted 30 July, 2018;
originally announced August 2018.
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Interpretable and efficient contrast in scanning transmission electron microscopy with a diffraction grating beamsplitter
Authors:
Tyler R. Harvey,
Fehmi S. Yasin,
Jordan J. Chess,
Jordan S. Pierce,
Roberto M. S. dos Reis,
Vasfi Burak Özdöl,
Peter Ercius,
Jim Ciston,
Wenchun Feng,
Nicholas A. Kotov,
Benjamin J. McMorran,
Colin Ophus
Abstract:
Efficient imaging of biomolecules, 2D materials and electromagnetic fields depends on retrieval of the phase of transmitted electrons. We demonstrate a method to measure phase in a scanning transmission electron microscope using a nanofabricated diffraction grating to produce multiple probe beams. The measured phase is more interpretable than phase-contrast scanning transmission electron microscop…
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Efficient imaging of biomolecules, 2D materials and electromagnetic fields depends on retrieval of the phase of transmitted electrons. We demonstrate a method to measure phase in a scanning transmission electron microscope using a nanofabricated diffraction grating to produce multiple probe beams. The measured phase is more interpretable than phase-contrast scanning transmission electron microscopy techniques without an off-axis reference wave, and the resolution could surpass that of off-axis electron holography. We apply the technique to image nanoparticles, carbon sub- strates and electric fields. The contrast observed in experiments agrees well with contrast predicted in simulations.
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Submitted 28 July, 2018;
originally announced August 2018.
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New Inequalities of the type of Hadamard's through $s-(α,m)$ co-ordinated convex functions
Authors:
M. I. Bhatti,
M. Muddassar,
F. Yasin
Abstract:
This monograph is associated with the renowned Hermite-Hadamard's integral inequality of $2$-variables on the co-ordinates. In this article we established several inequalities of the type of Hadamard's for the map**s whose absolute values of second order partial derivatives are $s-(α,m)$-convex map**s.
This monograph is associated with the renowned Hermite-Hadamard's integral inequality of $2$-variables on the co-ordinates. In this article we established several inequalities of the type of Hadamard's for the map**s whose absolute values of second order partial derivatives are $s-(α,m)$-convex map**s.
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Submitted 20 August, 2015;
originally announced August 2015.
