Showing 1–17 of 17 results for author: Yashina, L

Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$

Authors: Alexander S. Frolov, Dmitry Yu. Usachov, Artem V. Tarasov, Alexander V. Fedorov, Kirill A. Bokai, Ilya Klimovskikh, Vasily S. Stolyarov, Anton I. Sergeev, Alexander N. Lavrov, Vladimir A. Golyashov, Oleg E. Tereshchenko, Giovanni Di Santo, Luca Petaccia, Oliver J. Clark, Jaime Sanchez-Barriga, Lada V. Yashina

Abstract: For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dep… ▽ More For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs. △ Less

Submitted 22 June, 2023; originally announced June 2023.

Impact of ultrafast transport on the high-energy states of a photoexcited topological insulator

Authors: F. Freyse, M. Battiato, L. V. Yashina, J. Sánchez-Barriga

Abstract: Ultrafast dynamics in three-dimensional topological insulators (TIs) opens new routes for increasing the speed of information transport up to frequencies thousand times faster than in modern electronics. However, up to date, disentangling the exact contributions from bulk and surface transport to the subpicosecond dynamics of these materials remains a difficult challenge. Here, using time- and ang… ▽ More Ultrafast dynamics in three-dimensional topological insulators (TIs) opens new routes for increasing the speed of information transport up to frequencies thousand times faster than in modern electronics. However, up to date, disentangling the exact contributions from bulk and surface transport to the subpicosecond dynamics of these materials remains a difficult challenge. Here, using time- and angle-resolved photoemission, we demonstrate that driving a TI from the bulk-conducting into the bulk-insulating transport regime allows to selectively switch on and off the emergent channels of ultrafast transport between the surface and the bulk. We thus establish that ultrafast transport is one of the main driving mechanisms responsible for the decay of excited electrons in prototypical TIs following laser excitation. We further show how ultrafast transport strongly affects the thermalization and scattering dynamics of the excited states up to high energies above the Fermi level. In particular, we observe how inhibiting the transport channels leads to a thermalization bottleneck that substantially slows down electron-hole recombination via electron-electron scatterings. Our results pave the way for exploiting ultrafast transport to control thermalization time scales in TI-based optoelectronic applications, and expand the capabilities of TIs as intrinsic solar cells. △ Less

Submitted 21 September, 2018; originally announced September 2018.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 98, 115132 (2018)

Anomalous behavior of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ across the quantum-phase transition from topological to trivial insulator

Authors: J. Sánchez-Barriga, I. Aguilera, L. V. Yashina, D. Y. Tsukanova, F. Freyse, A. N. Chaika, A. M. Abakumov, A. Varykhalov, E. D. L. Rienks, G. Bihlmayer, S. Blügel, O. Rader

Abstract: Using spin- and angle-resolved spectroscopy and relativistic many-body calculations, we investigate the evolution of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ bulk single crystals around the critical point of the trivial to topological insulator quantum-phase transition. By increasing $x$, we observe how a surface gap opens at the Dirac point of the initially gapless topological sur… ▽ More Using spin- and angle-resolved spectroscopy and relativistic many-body calculations, we investigate the evolution of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ bulk single crystals around the critical point of the trivial to topological insulator quantum-phase transition. By increasing $x$, we observe how a surface gap opens at the Dirac point of the initially gapless topological surface state of Bi$_2$Se$_3$, leading to the existence of massive fermions. The surface gap monotonically increases for a wide range of $x$ values across the topological and trivial sides of the quantum-phase transition. By means of photon-energy dependent measurements, we demonstrate that the gapped surface state survives the inversion of the bulk bands which occurs at a critical point near $x=0.055$. The surface state exhibits a non-zero in-plane spin polarization which decays exponentially with increasing $x$, and that persists on both the topological and trivial insulator phases. Its out-of-plane spin polarization remains zero demonstrating the absence of a hedgehog spin texture expected from broken time-reversal symmetry. Our calculations reveal qualitative agreement with the experimental results all across the quantum-phase transition upon the systematic variation of the spin-orbit coupling strength. A non-time reversal symmetry breaking mechanism of bulk-mediated scattering processes that increase with decreasing spin-orbit coupling strength is proposed as explanation. △ Less

Submitted 3 July, 2018; originally announced July 2018.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 98, 235110 (2018)

Quasi-two-dimensional thermoelectricity in SnSe

Authors: V. Tayari, B. V. Senkovskiy, D. Rybkovskiy, N. Ehlen, A. Fedorov, C. -Y. Chen, J. Avila, M. Asensio, A. Perucchi, P. di Pietro, L. Yashina, I. Fakih, N. Hemsworth, M. Petrescu, G. Gervais, A. Grüneis, T. Szkopek

Abstract: Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valle… ▽ More Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications. △ Less

Submitted 22 February, 2018; originally announced February 2018.

Comments: 10 pages, 5 figures, plus supporting information

Journal ref: Phys. Rev. B 97, 045424 (2018)

Double Fe-impurity charge state in the topological insulator Bi$_2$Se$_3$

Authors: V. S. Stolyarov, S. V. Remizov, D. S. Shapiro, S. Pons, S. Vlaic, H. Aubin, D. S. Baranov, Ch. Brun, L. V. Yashina, S. I. Bozhko, T. Cren, W. V. Pogosov, D. Roditchev

Abstract: The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, a… ▽ More The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, as well as on the overall do** level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to the Dirac point and bulk bands have both to be taken into account when considering the electron scattering on the disorder in topological insulators. △ Less

Submitted 5 December, 2017; v1 submitted 4 December, 2017; originally announced December 2017.

Comments: 10 pages, accepted for publication in Applied Physics Letters, minor bugs were corrected

Journal ref: Appl. Phys. Lett. 111, 251601 (2017)

High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$

Authors: Marco Busch, Olivio Chiatti, Sergio Pezzini, Steffen Wiedmann, Jaime Sánchez-Barriga, Oliver Rader, Lada V. Yashina, Saskia F. Fischer

Abstract: Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional… ▽ More Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in bulk Bi$_2$Se$_3$ with a high electron density $n$ of about $2\!\cdot\!10^{19}$ cm$^{-3}$. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi$_2$Se$_3$ and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance. △ Less

Submitted 28 July, 2017; originally announced July 2017.

Laser-induced persistent photovoltage on the surface of a ternary topological insulator at room temperature

Authors: J. Sánchez-Barriga, M. Battiato, E. Golias, A. Varykhalov, L. V. Yashina, O. Kornilov, O. Rader

Abstract: Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical concentration $x$=0.55, where the system becomes bulk insulating, a surface voltage can be driven at room temperature through the topological surface state solely by op… ▽ More Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical concentration $x$=0.55, where the system becomes bulk insulating, a surface voltage can be driven at room temperature through the topological surface state solely by optical means. We further show that such a photovoltage persists over a time scale that exceeds $\sim$6 $μ$s, i.e, much longer than the characteristic relaxation times of bulk states. We attribute the origin of the photovoltage to a laser-induced band-bending effect which emerges near the surface region on ultrafast time scales. The photovoltage is also accompanied by a remarkable increase in the relaxation times of excited states as compared to undoped topological insulators. Our findings are relevant in the context of applications of topological surface states in future optical devices. △ Less

Submitted 19 May, 2017; originally announced May 2017.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 141605 (2017)

Sub-picosecond spin dynamics of excited states in the topological insulator Bi$_2$Te$_3$

Authors: J. Sánchez-Barriga, M. Battiato, M. Krivenkov, E. Golias, A. Varykhalov, A. Romualdi, L. V. Yashina, J. Minár, O. Kornilov, H. Ebert, K. Held, J. Braun

Abstract: Using time-, spin- and angle-resolved photoemission, we investigate the ultrafast spin dynamics of hot electrons on the surface of the topological insulator Bi$_2$Te$_3$ following optical excitation by fs-infrared pulses. We observe two surface-resonance states above the Fermi level coexisting with a transient population of Dirac fermions that relax in about $\sim$2 ps. One state is located below… ▽ More Using time-, spin- and angle-resolved photoemission, we investigate the ultrafast spin dynamics of hot electrons on the surface of the topological insulator Bi$_2$Te$_3$ following optical excitation by fs-infrared pulses. We observe two surface-resonance states above the Fermi level coexisting with a transient population of Dirac fermions that relax in about $\sim$2 ps. One state is located below $\sim$0.4 eV just above the bulk continuum, the other one at $\sim$0.8 eV inside a projected bulk band gap. At the onset of the excitation, both states exhibit a reversed spin texture with respect to that of the transient Dirac bands, in agreement with our one-step photoemission calculations. Our data reveal that the high-energy state undergoes spin relaxation within $\sim$0.5 ps, a process that triggers the subsequent spin dynamics of both the Dirac cone and the low-energy state, which behave as two dynamically-locked electron populations. We discuss the origin of this behavior by comparing the relaxation times observed for electrons with opposite spins to the ones obtained from a microscopic Boltzmann model of ultrafast band cooling introduced into the photoemission calculations. Our results demonstrate that the nonequilibrium surface dynamics is governed by electron-electron rather than electron-phonon scattering, with a characteristic time scale unambiguously determined by the complex spin texture of excited states above the Fermi level. Our findings reveal the critical importance of detecting momentum and energy-resolved spin textures with fs resolution to fully understand the sub-ps dynamics of transient electrons on the surface of topological insulators. △ Less

Submitted 19 May, 2017; originally announced May 2017.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 95, 125405 (2017)

Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi$_{1-x}$Mn$_x)_2$Se$_3$

Authors: J. Sánchez-Barriga, A. Varykhalov, G. Springholz, H. Steiner, R. Kirchschlager, G. Bauer, O. Caha, E. Schierle, E. Weschke, A. A. Ünal, S. Valencia, M. Dunst, J. Braun, H. Ebert, J. Minár, E. Golias, L. V. Yashina, A. Ney, V. Holý, O. Rader

Abstract: Magnetic do** is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surf… ▽ More Magnetic do** is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn do** does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection. △ Less

Submitted 9 March, 2016; originally announced March 2016.

Comments: 26 pages, 7 figures

Journal ref: Nature Communications 7, 10559 (2016)

2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes

Authors: Olivio Chiatti, Christian Riha, Dominic Lawrenz, Marco Busch, Srujana Dusari, Jaime Sánchez-Barriga, Anna Mogilatenko, Lada V. Yashina, Sergio Valencia, Akin A. Ünal, Oliver Rader, Saskia F. Fischer

Abstract: Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related… ▽ More Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability. △ Less

Submitted 6 June, 2016; v1 submitted 4 December, 2015; originally announced December 2015.

Comments: Sci. Rep. (2016)

Ultrafast spin polarization control of Dirac fermions in topological insulators

Authors: J. Sánchez-Barriga, E. Golias, A. Varykhalov, J. Braun, L. V. Yashina, R. Schumann, J. Minár, H. Ebert, O. Kornilov, O. Rader

Abstract: Three-dimensional topological insulators (TIs) are characterized by spin-polarized Dirac-cone surface states that are protected from backscattering by time-reversal symmetry. Control of the spin polarization of topological surface states (TSSs) using femtosecond light pulses opens novel perspectives for the generation and manipulation of dissipationless surface spin currents on ultrafast timescale… ▽ More Three-dimensional topological insulators (TIs) are characterized by spin-polarized Dirac-cone surface states that are protected from backscattering by time-reversal symmetry. Control of the spin polarization of topological surface states (TSSs) using femtosecond light pulses opens novel perspectives for the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Using time-, spin-, and angle-resolved spectroscopy, we directly monitor for the first time the ultrafast response of the spin polarization of photoexcited TSSs to circularly-polarized femtosecond pulses of infrared light. We achieve all-optical switching of the transient out-of-plane spin polarization, which relaxes in about 1.2 ps. Our observations establish the feasibility of ultrafast optical control of spin-polarized Dirac fermions in TIs and pave the way for novel optospintronic applications at ultimate speeds. △ Less

Submitted 11 May, 2015; originally announced May 2015.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 93, 155426 (2016)

Anisotropic effect of war** on the lifetime broadening of topological surface states in angle-resolved photoemission from Bi$_2$Te$_3$

Authors: J. Sánchez-Barriga, M. R. Scholz, E. Golias, E. Rienks, D. Marchenko, A. Varykhalov, L. V. Yashina, O. Rader

Abstract: We analyze the strong hexagonal war** of the Dirac cone of Bi$_2$Te$_3$ by angle-resolved photoemission. Along $\overlineΓ$$\overline{\rm M}$, the dispersion deviates from a linear behavior meaning that the Dirac cone is warped outwards and not inwards. We show that this introduces an anisotropy in the lifetime broadening of the topological surface state which is larger along $\overlineΓ$… ▽ More We analyze the strong hexagonal war** of the Dirac cone of Bi$_2$Te$_3$ by angle-resolved photoemission. Along $\overlineΓ$$\overline{\rm M}$, the dispersion deviates from a linear behavior meaning that the Dirac cone is warped outwards and not inwards. We show that this introduces an anisotropy in the lifetime broadening of the topological surface state which is larger along $\overlineΓ$$\overline{\rm K}$. The result is not consistent with nesting. Based on the theoretically predicted behavior of the ground-state spin texture of a strongly warped Dirac cone, we propose spin-dependent scattering processes as explanation for the anisotropic scattering rates. These results could help paving the way for optimizing future spintronic devices using topological insulators and controlling surface-scattering processes via external gate voltages. △ Less

Submitted 7 April, 2015; originally announced April 2015.

Comments: 12 pages, 5 figures

Journal ref: Phys. Rev. B 90, 195413 (2014), Editor's Suggestion

Surface states in a 3D topological insulator: The role of hexagonal war** and curvature

Authors: E. V. Repin, V. S. Stolyarov, T. Cren, C. Brun, S. I. Bozhko, L. V. Yashina, D. Roditchev, I. S. Burmistrov

Abstract: We explore a combined effect of hexagonal war** and of finite effective mass on both the tunneling density of electronic states (TDOS) and structure of Landau levels (LLs) of 3D topological insulators. We find the increasing war** to transform the square-root van Hove singularity into a logarithmic one. For moderate war** an additional logarithmic singularity and a jump in the TDOS appear. T… ▽ More We explore a combined effect of hexagonal war** and of finite effective mass on both the tunneling density of electronic states (TDOS) and structure of Landau levels (LLs) of 3D topological insulators. We find the increasing war** to transform the square-root van Hove singularity into a logarithmic one. For moderate war** an additional logarithmic singularity and a jump in the TDOS appear. This phenomenon is experimentally verified by direct measurements of the local TDOS in Bi$_2$Te$_3$. By combining the perturbation theory and the WKB approximation we calculate the LLs in the presence of hexagonal war**. We predict that due to the degeneracy removal the evolution of LLs in the magnetic field is drastically modified. △ Less

Submitted 29 August, 2014; originally announced August 2014.

Comments: 10 pages, 7 figures

Photoemission of Bi$_2$Se$_3$ with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

Authors: J. Sánchez-Barriga, A. Varykhalov, J. Braun, S. -Y. Xu, N. Alidoust, O. Kornilov, J. Minár, K. Hummer, G. Springholz, G. Bauer, R. Schumann, L. V. Yashina, H. Ebert, M. Z. Hasan, O. Rader

Abstract: Topological insulators are characterized by Dirac cone surface states with electron spins aligned in the surface plane and perpendicular to their momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved ph… ▽ More Topological insulators are characterized by Dirac cone surface states with electron spins aligned in the surface plane and perpendicular to their momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50-70 eV) with linear or circular polarization probe indeed the initial state spin texture of Bi$_2$Se$_3$ while circularly polarized 6 eV low energy photons flip the electron spins out of plane and reverse their spin polarization. Our photoemission calculations, considering the interplay between the varying probing depth, dipole selection rules and spin-dependent scattering effects involving initial and final states explain these findings, and reveal proper conditions for light-induced spin manipulation. This paves the way for future applications of topological insulators in opto-spintronic devices. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Comments: Submitted for publication (2013)

Journal ref: Phys. Rev. X 4, 011046 (2014)

Reversal of the circular dichroism in the angle-resolved photoemission from Bi2Te3

Authors: M. R. Scholz, J. Sánchez-Barriga, J. Braun, D. Marchenko, A. Varykhalov, M. Lindroos, Yung Jui Wang, Hsin Lin, A. Bansil, J. Minár, H. Ebert, A. Volykhov, L. V. Yashina, O. Rader

Abstract: The helical Dirac fermions at the surface of topological insulators show a strong circular dichroism which has been explained as being due to either the initial-state spin angular momentum, the initial-state orbital angular momentum, or the handedness of the experimental setup. All of these interpretations conflict with our data from Bi2Te3 which depend on the photon energy and show several sign c… ▽ More The helical Dirac fermions at the surface of topological insulators show a strong circular dichroism which has been explained as being due to either the initial-state spin angular momentum, the initial-state orbital angular momentum, or the handedness of the experimental setup. All of these interpretations conflict with our data from Bi2Te3 which depend on the photon energy and show several sign changes. Our one-step photoemission calculations coupled to ab initio theory confirm the sign change and assign the dichroism to a final-state effect. The spin polarization of the photoelectrons, instead, remains a reliable probe for the spin in the initial state. △ Less

Submitted 25 March, 2013; originally announced March 2013.

Comments: 16 pages, 4 figures; submitted to Physical Review Letters

High spin polarization and circular dichroism of topological surface states on Bi2Te3

Authors: M. R. Scholz, J. Sánchez-Barriga, D. Marchenko, A. Varykhalov, A. Volykhov, L. V. Yashina, O. Rader

Abstract: Topological insulators have been successfully identified by spin-resolved photoemission but the spin polarization remained low (~20%). We show for Bi2Te3 that the in-gap surface state is much closer to full spin polarization with measured values reaching 80% at the Fermi level. When hybridizing with the bulk it remains highly spin polarized which may explain recent unusual quantum interference res… ▽ More Topological insulators have been successfully identified by spin-resolved photoemission but the spin polarization remained low (~20%). We show for Bi2Te3 that the in-gap surface state is much closer to full spin polarization with measured values reaching 80% at the Fermi level. When hybridizing with the bulk it remains highly spin polarized which may explain recent unusual quantum interference results on Bi2Se3. The topological surface state shows a large circular dichroism in the photoelectron angle distribution with an asymmetry of ~20% the sign of which corresponds to that of the measured spin. △ Less

Submitted 25 May, 2012; v1 submitted 4 August, 2011; originally announced August 2011.

Comments: 9 pages, 3 figures, submitted to Phys. Rev. Letters 9.10.2010 (under review)

Tolerance of topological surface states towards magnetic moments: Fe on Bi2Te3 and Bi2Se3

Authors: M. R. Scholz, J. Sánchez-Barriga, D. Marchenko, A. Varykhalov, A. Volykhov, L. V. Yashina, O. Rader

Abstract: Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal symmetry(1-8) open up tremendous additional possibilities for external control of transport properties(10-18). Here we show by angle-resolved photoelectron spectr… ▽ More Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal symmetry(1-8) open up tremendous additional possibilities for external control of transport properties(10-18). Here we show by angle-resolved photoelectron spectroscopy that the topological sur-face states of Bi2Te3 and Bi2Se3 are stable against the deposition of Fe without opening a band gap. This stability extends to low submonolayer coverages meaning that the band gap reported recently(19) for Fe on Bi2Se3 is incorrect as well as to complete monolayers meaning that topological surface states can very well exist at interfaces with ferromagnets in future devices. △ Less

Submitted 4 August, 2011; originally announced August 2011.

Comments: 10 pages, 3 figures, submitted to Nature Physics 22. July 2011