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Phase Transitions in Germanium Telluride Nanoparticle Phase-Change Materials Studied by Time-Resolved X-Ray Diffraction
Authors:
Ann-Katrin U. Michel,
Felix Donat,
Aurelia Siegfried,
Olesya Yarema,
Hanbing Fang,
Maksym Yarema,
Vanessa Wood,
Christoph R. Müller,
David J. Norris
Abstract:
Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural phases: three at room temperature (one amorphous and two crystalline, $α$ and $γ$) and one at high temperature (crystalline $β$). Because transitions between the amorphous and crystalline phases lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been…
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Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural phases: three at room temperature (one amorphous and two crystalline, $α$ and $γ$) and one at high temperature (crystalline $β$). Because transitions between the amorphous and crystalline phases lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-$α$ transition in sub-10\,nm GeTe particles. The $α$-to-$β$ phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved X-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-$α$ transition between 210$^{\circ}$C and 240$^{\circ}$C and a volatile $α$-to-$β$ transition between 370$^{\circ}$C and 420$^{\circ}$C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications, such as in active photonics.
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Submitted 20 November, 2020;
originally announced November 2020.
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Spectrally-resolved dielectric function of amorphous and crystalline GeTe nanoparticle thin films
Authors:
Ann-Katrin U. Michel,
Marilyne Sousa,
Maksym Yarema,
Olesya Yarema,
Vladimir Ovuka,
Nolan Lassaline,
Vanessa Wood,
David J. Norris
Abstract:
Phase-change materials (PCMs), which are well-established in optical and random-access memories, are increasingly studied for emerging topics such as brain-inspired computing and active photonics. These applications take advantage of the pronounced reflectivity and resistivity changes that accompany the structural transition in PCMs from their amorphous to crystalline state. However, PCMs are typi…
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Phase-change materials (PCMs), which are well-established in optical and random-access memories, are increasingly studied for emerging topics such as brain-inspired computing and active photonics. These applications take advantage of the pronounced reflectivity and resistivity changes that accompany the structural transition in PCMs from their amorphous to crystalline state. However, PCMs are typically fabricated as thin films via sputtering, which is costly, requires advanced equipment, and limits the sample and device design. Here, we investigate a simpler and more flexi-ble approach for applications in tunable photonics: the use of sub-10 nm colloidal PCM nanoparticles (NPs). We report the optical properties of amorphous and crystalline germanium telluride (GeTe) NP thin films from the infrared to the ultraviolet spectral range. Using spectroscopic ellipsometry with support from cross-sectional scanning electron microscopy, atomic force microscopy, and absorption spectroscopy, we extract refractive indices n, extinction coefficients k, and band gaps Eg and compare to values known for sputtered GeTe thin films. We find a decrease of n and k and an increase of Eg for NP-based GeTe films, yielding insights into size-dependent property changes for nanoscale PCMs. Furthermore, our results reveal the suitability of GeTe NPs for tunable photonics in the near-infrared and visible spectral range. Finally, we studied sample reproducibility and aging of our NP films. We found that the colloidally-prepared PCM thin films were stable for at least two months stored under nitrogen, further supporting the great promise of these materials in applications.
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Submitted 4 February, 2020;
originally announced February 2020.
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Charge Transport in Semiconductors Assembled from Nanocrystals
Authors:
Nuri Yazdani,
Samuel Andermatt,
Maksym Yarema,
Vasco Farto,
Mohammad Hossein Bani-Hashemian,
Sebastian Volk,
Weyde Lin,
Olesya Yarema,
Mathieu Luisier,
Vanessa Wood
Abstract:
The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge tra…
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The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge transport through NC semiconductors have eluded exploitation due to the inability for predictive control of their electronic properties. Here, we perform large-scale, ab-initio simulations to understand carrier transport, generation, and trap** in NC-based semiconductors from first principles. We use these findings to build the first predictive model for charge transport in NC semiconductors, which we validate experimentally. Our work reveals that we have been thinking about transport in NC semiconductors incorrectly. Our new insights provide a path for systematic engineering of NC semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems.
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Submitted 6 January, 2020; v1 submitted 20 September, 2019;
originally announced September 2019.
