-
Effects of Steric Factors on Molecular Do** to MoS$_2$
Authors:
Serrae N. Reed,
Yifeng Chen,
Milad Yarali,
David J. Charboneau,
Julia B. Curley,
Nilay Hazari,
Su Ying Quek,
Judy J. Cha
Abstract:
Surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful method to modulate the electronic properties of the material. However, our fundamental understanding of the do** mechanism is largely limited to the categorization of molecular dopants as n- or p-type based on the relative position of the molecule's redox potential in relation to the Fer…
▽ More
Surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful method to modulate the electronic properties of the material. However, our fundamental understanding of the do** mechanism is largely limited to the categorization of molecular dopants as n- or p-type based on the relative position of the molecule's redox potential in relation to the Fermi level of the 2D host. Our limited knowledge about the impact of factors other than the redox properties of the molecule on do** makes it challenging to controllably use molecules to dope 2D materials and design new OEDs. Here, we functionalize monolayer MoS$_2$ using two molecular dopants, Me- and $^t$Bu-OED, which have the same redox potential but different steric properties to probe the effects of molecular size on the do** level of MoS$_2$. We show that, for the same functionalization conditions, the do** powers of Me- and $^t$Bu-OED are 0.22 - 0.44 and 0.11 electrons per molecule, respectively, demonstrating that the steric properties of the molecule critically affect do** levels. Using the stronger dopant, Me-OED, a carrier density of 1.10 +/- 0.37 x 10$^{14}$ cm$^{-2}$ is achieved in MoS$_2$, the highest do** level to date for MoS$_2$ using surface functionalization. Overall, we establish that tuning of the steric properties of the dopant is essential in the rational design of molecular dopants.
△ Less
Submitted 5 August, 2021; v1 submitted 26 July, 2021;
originally announced July 2021.
-
Heterointerface effects on lithium-induced phase transitions in intercalated MoS2
Authors:
Sajad Yazdani,
Joshua V. Pondick,
Aakash Kumar,
Milad Yarali,
John M. Woods,
David J. Hynek,
Diana Y. Qiu,
Judy J. Cha
Abstract:
The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN)…
▽ More
The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN) interface stabilizes the 1T phase over the 2H phase of MoS2 by ~ 100 mJ m-2, suggesting that encapsulating MoS2 with hBN may lower the electrochemical energy needed for the intercalation-induced phase transition. However, in situ Raman spectroscopy of hBN-MoS2-hBN heterostructures during electrochemical intercalation of Li+ shows that the phase transition occurs at the same applied voltage for the heterostructure as for bare MoS2. We hypothesize that the predicted thermodynamic stabilization of the 1T'-MoS2-hBN interface is counteracted by an energy barrier to the phase transition imposed by the steric hindrance of the heterointerface. The phase transition occurs at lower applied voltages upon heating the heterostructure, which supports our hypothesis. Our study highlights that interfacial effects of 2D heterostructures can go beyond modulating electrical properties and can modify electrochemical and phase transition behaviors.
△ Less
Submitted 27 November, 2020;
originally announced November 2020.
-
Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David
Authors:
David J. Hynek,
Raivat M. Singhania,
Shiyu Xu,
Benjamin Davis,
Lei Wang,
Milad Yarali,
Joshua V. Pondick,
John M. Woods,
Nicholas C. Strandwitz,
Judy J. Cha
Abstract:
Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the superconducting state in the 1T and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum…
▽ More
Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the superconducting state in the 1T and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe2 and its potential applications require large area MoTe2 thin films with high crystallinity and thickness control. Here, we present cm2 scale synthesis of 2H MoTe2 thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoOx thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor-substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe2 films: MoTe2 grown on sapphire show uniform films while MoTe2 grown on amorphous SiO2 substrates form islands. This synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results, and is applicable to grow other transition metal dichalcogenides with layer control.
△ Less
Submitted 19 October, 2020;
originally announced October 2020.
-
The Effect of Mechanical Strain on Lithium Staging in Graphene
Authors:
Joshua V. Pondick,
Sajad Yazdani,
Milad Yarali,
Serrae N. Reed,
David J. Hynek,
Judy J. Cha
Abstract:
Lithium intercalation into graphite is the foundation for the lithium-ion battery, and the thermodynamics of the lithiation of graphitic electrodes have been heavily investigated. Intercalated lithium in bulk graphite undergoes structural ordering known as staging to minimize electrostatic repulsions within the crystal lattice. While this process is well-understood for bulk graphite, confinement e…
▽ More
Lithium intercalation into graphite is the foundation for the lithium-ion battery, and the thermodynamics of the lithiation of graphitic electrodes have been heavily investigated. Intercalated lithium in bulk graphite undergoes structural ordering known as staging to minimize electrostatic repulsions within the crystal lattice. While this process is well-understood for bulk graphite, confinement effects become important at the nanoscale, which can significantly impact the electrochemistry of nanostructured electrodes. Therefore, graphene offers a model platform to study intercalation dynamics at the nanoscale by combining on-chip device fabrication and electrochemical intercalation with in situ characterization. We show that microscale mechanical strain significantly affects the formation of ordered lithium phases in graphene. In situ Raman spectroscopy of graphene microflakes mechanically constrained at the edge during lithium intercalation reveals a thickness-dependent increase of up to 1.26 V in the electrochemical potential that induces lithium staging. While the induced mechanical strain energy increases with graphene thickness to the fourth power, its magnitude is small compared to the observed increase in electrochemical energy. We hypothesize that the mechanical strain energy increases a nucleation barrier for lithium staging, greatly delaying the formation of ordered lithium phases. Our results indicate that electrode assembly can critically impact lithium staging dynamics important for cycling rates and power generation for batteries. We demonstrate strain engineering in two-dimensional nanomaterials as an approach to manipulate phase transitions and chemical reactivity.
△ Less
Submitted 6 August, 2020;
originally announced August 2020.
-
Near Unity Molecular Do** Efficiency in Monolayer MoS2
Authors:
Milad Yarali,
Yiren Zhong,
Serrae N. Reed,
Juefan Wang,
Kanchan A. Ulman,
David J. Charboneau,
Julia B. Curley,
David J. Hynek,
Joshua V. Pondick,
Sajad Yazdani,
Nilay Hazari,
Su Ying Quek,
Hailiang Wang,
Judy J. Cha
Abstract:
Surface functionalization with organic electron donors (OEDs) is an effective do** strategy for two-dimensional (2D) materials, which can achieve do** levels beyond those possible with conventional electric field gating. While the effectiveness of surface functionalization has been demonstrated in many 2D systems, the do** efficiencies of OEDs have largely been unmeasured, which is in stark…
▽ More
Surface functionalization with organic electron donors (OEDs) is an effective do** strategy for two-dimensional (2D) materials, which can achieve do** levels beyond those possible with conventional electric field gating. While the effectiveness of surface functionalization has been demonstrated in many 2D systems, the do** efficiencies of OEDs have largely been unmeasured, which is in stark contrast to their precision syntheses and tailored redox potentials. Here, using monolayer MoS2 as a model system and an organic reductant based on 4,4-bipyridine (DMAP-OED) as a strong organic dopant, we establish that the do** efficiency of DMAP-OED to MoS2 is in the range of 0.63 to 1.26 electrons per molecule. We also achieve the highest do** level to date in monolayer MoS2 by surface functionalization and demonstrate that DMAP-OED is a stronger dopant than benzyl viologen, which was the previous best OED dopant. The measured range of the do** efficiency is in good agreement with the values predicted from first-principles calculations. Our work provides a basis for the rational design of OEDs for high-level do** of 2D materials.
△ Less
Submitted 7 July, 2020;
originally announced July 2020.
