Ultrabroadband THz/IR upconversion and photovoltaic response in semi-conductor ratchet based upconverter
Authors:
Peng Bai,
Ning Yang1,
Weidong Chu,
Yueheng Zhang,
Wenzhong Shen,
Zhanglong Fu,
Dixiang Shao,
Kang Zhou,
Zhiyong Tan,
Hua Li,
Juncheng Cao,
Lianhe Li,
Edmund Harold Linfield,
Yan Xie,
Ziran Zhao
Abstract:
An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photoresponse from terahertz (THz) to near infrared (NIR) region (4-200 THz) was realized that covers a much wider frequency range com-pared with the existin…
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An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photoresponse from terahertz (THz) to near infrared (NIR) region (4-200 THz) was realized that covers a much wider frequency range com-pared with the existing upconversion devices. Broadband IR/THz radiation from 1000 K blackbody is successfully upconverted into NIR photons which can be detected by commercial Si-based device. The normal incidence absorption of the RP simplifies the structure of the RP-LED device and make it more compact compared with the inter-subband transition based upconverters. In addition to the up-conversion function, the proposed upconverter is also tested as photovoltaic detectors in the infrared region (15-200 THz) without an applied bias voltage due to the ratchet effect.
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Submitted 10 September, 2021;
originally announced September 2021.
