First data and preliminary experimental results from a new Doppler Backscattering system on the MAST-U spherical tokamak
Authors:
P. Shi,
R. Scannell,
J. Wen,
Z. B. Shi,
C. Michael,
T. Rhodes,
V. H. Hall-Chen,
Z. C. Yang,
M. Jiang,
W. L. Zhong
Abstract:
A new Doppler backscattering (DBS) system, consisting of Q-band and V-band, has been installed and achieved its first data on the MAST-U spherical tokamak. The Q-band and V-band have separate microwave source systems, but share the same optical front-end components. The Q-band and V-band sources simultaneously generate eight (34, 36, 38, 40, 42, 44, 46 and 48 GHz) and seven (52.5, 55, 57.5, 60, 62…
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A new Doppler backscattering (DBS) system, consisting of Q-band and V-band, has been installed and achieved its first data on the MAST-U spherical tokamak. The Q-band and V-band have separate microwave source systems, but share the same optical front-end components. The Q-band and V-band sources simultaneously generate eight (34, 36, 38, 40, 42, 44, 46 and 48 GHz) and seven (52.5, 55, 57.5, 60, 62.5, 65 and 67.5 GHz) fixed frequency probe beams, respectively. These frequencies provide a large range of radial positions from the low-field-side edge plasma to the core, and possibly to the high-field-side edge, depending on the plasma conditions. The quasi-optical system consists of a remotely-tunable polarizer, a focusing lens and a remotely-steerable mirror. By steering the mirror, the system provides remote control of the probed density fluctuation wavenumber, and allow the launch angle to match the magnetic field. The range of accessible turbulence wavenumbers (k_θ) is reasonably large with normalized wavenumber k_θρ_s ranging from <0.5 to 9. The first data acquired by this DBS system is validated by comparing with the data from the other DBS system on MAST-U (introduced in Ref. [21]). An example of measuring the velocity profile spanning from the edge to the center in a high-density plasma is presented, indicating the robust capabilities of the integrated Q-band and V-band DBS systems.
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Submitted 11 September, 2023; v1 submitted 1 September, 2023;
originally announced September 2023.
Alfvenic Ion Temperature Gradient Activities in a Weak Magnetic Shear Plasma
Authors:
W. Chen,
R. R. Ma,
Y. Y. Li,
Z. B. Shi,
H. R. Du,
M. Jiang,
L. M. Yu,
B. S. Yuan,
Y. G. Li,
Z. C. Yang,
P. W. Shi,
X. T. Ding,
J. Q. Dong,
Yi. Liu,
M. Xu,
Y. H. Xu,
Q. W. Yang,
X. R. Duan
Abstract:
We report the first experimental evidence of Alfvenic ion temperature gradient (AITG) modes in HL-2A Ohmic plasmas. A group of oscillations with $f=15-40$ kHz and $n=3-6$ is detected by various diagnostics in high-density Ohmic regimes. They appear in the plasmas with peaked density profiles and weak magnetic shear, which indicates that corresponding instabilities are excited by pressure gradients…
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We report the first experimental evidence of Alfvenic ion temperature gradient (AITG) modes in HL-2A Ohmic plasmas. A group of oscillations with $f=15-40$ kHz and $n=3-6$ is detected by various diagnostics in high-density Ohmic regimes. They appear in the plasmas with peaked density profiles and weak magnetic shear, which indicates that corresponding instabilities are excited by pressure gradients. The time trace of the fluctuation spectrogram can be either a frequency staircase, with different modes excited at different times or multiple modes may simultaneously coexist. Theoretical analyses by the extended generalized fishbone-like dispersion relation (GFLDR-E) reveal that mode frequencies scale with ion diamagnetic drift frequency and $η_i$, and they lie in KBM-AITG-BAE frequency ranges. AITG modes are most unstable when the magnetic shear is small in low pressure gradient regions. Numerical solutions of the AITG/KBM equation also illuminate why AITG modes can be unstable for weak shear and low pressure gradients. It is worth emphasizing that these instabilities may be linked to the internal transport barrier (ITB) and H-mode pedestal physics for weak magnetic shear.
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Submitted 16 November, 2016;
originally announced November 2016.
Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures
Authors:
D. N. Nath,
P. S. Park,
Z. C. Yang,
S. Rajan
Abstract:
In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGa…
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In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGaN is suggested as the dominant transport mechanism, and confirmed through experiments showing that non-random or digital AlGaN alloys and polarization-engineered binary GaN barriers can eliminate percolation transport and reduce leakage significantly. The understanding of vertical transport and methods for effective control proposed here will greatly impact III-nitride unipolar vertical devices.
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Submitted 16 February, 2013;
originally announced February 2013.
