Showing 1–5 of 5 results for author: Yang, T -

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Authors: L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet

Abstract: We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua… ▽ More We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM)

Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates

Authors: H. Fu, X. Zhang, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, I. Baranowski, T. -H. Yang, K. Xu, F. A. Ponce, B. Zhang, Y. Zhao

Abstract: This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low defect densities. The CL result confirmed the nonpolar p GaN was of high quality with considerably reduced deep level states. At forward bias, the device showed go… ▽ More This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low defect densities. The CL result confirmed the nonpolar p GaN was of high quality with considerably reduced deep level states. At forward bias, the device showed good rectifying behaviors with a turn-on voltage of 4.0 V, an on-resistance of 2.3 mohmcm2, and a high on off ratio of 1e10. At reverse bias, the current leakage and breakdown were described by the trap assisted space charge limited current conduction mechanism, where I was proportional to V power 4.5. The critical electrical field was calculated to be 2.0 MV per cm without field plates or edge termination, which is the highest value reported on nonpolar power devices. The high performance m-plane p-n diodes can serve as key building blocks to further develop nonpolar GaN power electronics and polarization-engineering-related advanced power device structures for power conversion applications. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 12 pages, 6 figures

Journal ref: Applied Physics Express 11 (11), 111003 (2018)

All-Optical Production of a Lithium Quantum Gas Using Narrow-Line Laser Cooling

Authors: P. M. Duarte, R. A. Hart, J. M. Hitchcock, T. A. Corcovilos, T. -L. Yang, A. Reed, R. G. Hulet

Abstract: We have used the narrow $2S_{1/2} \rightarrow 3P_{3/2}$ transition in the ultraviolet (uv) to laser cool and magneto-optically trap (MOT) $^6$Li atoms. Laser cooling of lithium is usually performed on the $2S_{1/2} \rightarrow 2P_{3/2}$ (D2) transition, and temperatures of $\sim$300 $μ$K are typically achieved. The linewidth of the uv transition is seven times narrower than the D2 line, resulting… ▽ More We have used the narrow $2S_{1/2} \rightarrow 3P_{3/2}$ transition in the ultraviolet (uv) to laser cool and magneto-optically trap (MOT) $^6$Li atoms. Laser cooling of lithium is usually performed on the $2S_{1/2} \rightarrow 2P_{3/2}$ (D2) transition, and temperatures of $\sim$300 $μ$K are typically achieved. The linewidth of the uv transition is seven times narrower than the D2 line, resulting in lower laser cooling temperatures. We demonstrate that a MOT operating on the uv transition reaches temperatures as low as 59 $μ$K. Furthermore, we find that the light shift of the uv transition in an optical dipole trap at 1070 nm is small and blue-shifted, facilitating efficient loading from the uv MOT. Evaporative cooling of a two spin-state mixture of $^6$Li in the optical trap produces a quantum degenerate Fermi gas with $3 \times 10^{6}$ atoms a total cycle time of only 11 s. △ Less

Submitted 18 January, 2012; v1 submitted 29 September, 2011; originally announced September 2011.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. A 84, 061406(R) (2011)

Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature

Authors: T. -Y. Yang, J. Balakrishnan, F. Volmer, A. Avsar, M. Jaiswal, J. Samm, S. R. Ali, A. Pachoud, M. Zeng, M. Popinciuc, G. Güntherodt, B. Beschoten, B. Özyilmaz

Abstract: We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of… ▽ More We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of up to 2 ns are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of D'yakonov-Perel' spin scattering in BLG. In comparison to SLG, significant changes in the density dependence of $τ_s$ are observed as a function of temperature. △ Less

Submitted 20 June, 2011; v1 submitted 6 December, 2010; originally announced December 2010.

Comments: 19 pages, 7 figures, includes supplementary information, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 107, 047206 (2011)

Nature of 45 degree vortex lattice reorientation in tetragonal superconductors

Authors: A. Knigavko, V. G. Kogan, B. Rosenstein, T. -J. Yang

Abstract: The transformation of the vortex lattice in a tetragonal superconductor which consists of its 45 degree reorientation relative to the crystal axes is studied using the nonlocal London model. It is shown that the reorientation occurs as two successive second order (continuous) phase transitions. The transition magnetic fields are calculated for a range of parameters relevant for borocarbide super… ▽ More The transformation of the vortex lattice in a tetragonal superconductor which consists of its 45 degree reorientation relative to the crystal axes is studied using the nonlocal London model. It is shown that the reorientation occurs as two successive second order (continuous) phase transitions. The transition magnetic fields are calculated for a range of parameters relevant for borocarbide superconductors in which the reorientation has been observed. △ Less

Submitted 14 February, 2000; originally announced February 2000.