Showing 1–7 of 7 results for author: Yama, N

Selective active resonance tuning for multi-mode nonlinear photonic cavities

Authors: Alan D. Logan, Nicholas S. Yama, Kai-Mei C. Fu

Abstract: Resonant enhancement of nonlinear photonic processes is critical for the scalability of applications such as long-distance entanglement generation. To implement nonlinear resonant enhancement, multiple resonator modes must be individually tuned onto a precise set of process wavelengths, which requires multiple linearly-independent tuning methods. Using coupled auxiliary resonators to indirectly tu… ▽ More Resonant enhancement of nonlinear photonic processes is critical for the scalability of applications such as long-distance entanglement generation. To implement nonlinear resonant enhancement, multiple resonator modes must be individually tuned onto a precise set of process wavelengths, which requires multiple linearly-independent tuning methods. Using coupled auxiliary resonators to indirectly tune modes in a multi-resonant nonlinear cavity is particularly attractive because it allows the extension of a single physical tuning mechanism, such as thermal tuning, to provide the required independent controls. Here we model and simulate the performance and tradeoffs of a coupled-resonator tuning scheme which uses auxiliary resonators to tune specific modes of a multi-resonant nonlinear process. Our analysis determines the tuning bandwidth for steady-state mode field intensity can significantly exceed the inter-cavity coupling rate if the total quality factor of the auxiliary resonator is higher than the multi-mode main resonator. Consequently, over-coupling a nonlinear resonator mode to improve the maximum efficiency of a frequency conversion process will simultaneously expand the auxiliary resonator tuning bandwidth for that mode, indicating a natural compatibility with this tuning scheme. We apply the model to an existing small-diameter triply-resonant ring resonator design and find that a tuning bandwidth of 136 GHz ~ 1.1 nm can be attained for a mode in the telecom band while limiting excess scattering losses to a quality factor of 10^6. Such range would span the distribution of inhomogeneously broadened quantum emitter ensembles as well as resonator fabrication variations, indicating the potential for the auxiliary resonators to enable not only low-loss telecom conversion but also the generation of indistinguishable photons in a quantum network. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Comments: 16 pages, 7 figures

Creation of color centers in diamond by recoil implantation through dielectric films

Authors: Yuyang Han, Christian Pederson, Bethany E. Matthews, Nicholas S. Yama, Maxwell F. Parsons, Kai-Mei C. Fu

Abstract: The need of near-surface color centers in diamond for quantum technologies motivates the controlled do** of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as ``recoil implantation.'' Here, we extend this technique to incorporate dielectric precurs… ▽ More The need of near-surface color centers in diamond for quantum technologies motivates the controlled do** of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as ``recoil implantation.'' Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable optical properties after annealing. △ Less

Submitted 28 December, 2023; v1 submitted 19 October, 2023; originally announced October 2023.

Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform

Authors: Nicholas S. Yama, I-Tung Chen, Srivatsa Chakravarthi, Bingzhao Li, Christian Pederson, Bethany E. Matthews, Steven R. Spurgeon, Daniel E. Perea, Mark G. Wirth, Peter V. Sushko, Mo Li, Kai-Mei C. Fu

Abstract: The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In t… ▽ More The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In this work we demonstrate that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional map**, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths. △ Less

Submitted 19 May, 2023; originally announced May 2023.

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Authors: Srivatsa Chakravarthi, Nicholas S. Yama, Alex Abulnaga, Ding Huang, Christian Pederson, Karine Hestroffer, Fariba Hatami, Nathalie P. de Leon, Kai-Mei C. Fu

Abstract: Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV)… ▽ More Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stam** process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal. △ Less

Submitted 13 December, 2022; v1 submitted 9 December, 2022; originally announced December 2022.

Optical manipulation of layer-valley coherence via strong exciton-photon coupling in microcavities

Authors: Mandeep Khatoniar, Nicholas Yama, Areg Ghazaryan, Sriram Guddala, Pouyan Ghaemi, Kausik Majumdar, Vinod Menon

Abstract: Coherent control and manipulation of quantum degrees of freedom such as spins forms the basis of emerging quantum technologies. In this context, the robust valley degree of freedom and the associated valley pseudospin found in two-dimensional transition metal dichalcogenides is a highly attractive platform. Valley polarization and coherent superposition of valley states have been observed in these… ▽ More Coherent control and manipulation of quantum degrees of freedom such as spins forms the basis of emerging quantum technologies. In this context, the robust valley degree of freedom and the associated valley pseudospin found in two-dimensional transition metal dichalcogenides is a highly attractive platform. Valley polarization and coherent superposition of valley states have been observed in these systems even up to room temperature. Control of valley coherence is an important building block for the implementation of valley qubit. Large magnetic fields or high-power lasers have been used in the past to demonstrate the control (initialization and rotation) of the valley coherent states. Here we demonstrate control of layer-valley coherence via strong coupling of valley excitons in bilayer WS2 to microcavity photons by exploiting the pseudomagnetic field arising in optical cavities owing to the TE-TM splitting. The use of photonic structures to generate pseudomagnetic fields which can be used to manipulate exciton-polaritons presents an attractive approach to control optical responses without the need for large magnets or high intensity optical pump powers. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators

Authors: Alan D. Logan, Shivangi Shree, Srivatsa Chakravarthi, Nicholas Yama, Christian Pederson, Karine Hestroffer, Fariba Hatami, Kai-Mei C. Fu

Abstract: We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at satura… ▽ More We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coupling. Efficient conversion from visible to telecom will facilitate long-distance transmission of spin-entangled photons from solid-state emitters such as the diamond NV center, allowing long-distance entanglement for quantum networks. △ Less

Submitted 16 August, 2022; v1 submitted 13 August, 2022; originally announced August 2022.

Comments: 15 pages, 5 figures

Optical Valley Hall Effect of 2D Excitons in Hyperbolic Metamaterial

Authors: Sriram Guddala, Mandeep Khatoniar, Nicholas Yama, W. Liu, G. S. Agarwal, Vinod M. Menon

Abstract: The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the different valleys, these valley electrons can be addressed optically. The electrons and excitons in these materials exhibit valley Hall effect, where the carrie… ▽ More The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the different valleys, these valley electrons can be addressed optically. The electrons and excitons in these materials exhibit valley Hall effect, where the carriers from specific valleys are directed to different directions under electrical or thermal bias. Here we report the optical valley Hall effect where the light emission from the valley polarized excitons in monolayer WS2 propagates in different directions owing to the preferential coupling of excitonic emission to the high momentum states of the hyperbolic metamaterial. The experimentally observed effects are corroborated with theoretical modeling of excitonic emission in the near field of hyperbolic media. The demonstration of the optical valley Hall effect using a bulk artificial photonic media without the need for nanostructuring opens the possibility of realizing valley-based excitonic circuits operating at room temperature. △ Less

Submitted 1 August, 2020; originally announced August 2020.

Comments: 14 pages, 4 figures