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MAPbBr3 monocrystals under electron beam radiolysis and degradation revealed by cathodoluminescence spectroscopy
Authors:
Yu. O. Kulanchikov,
P. S. Vergeles,
K. Konstantinova,
A. R. Ishteev,
D. S. Muratov,
E. E. Yakimov,
E. B. Yakimov,
D. S. Saranin
Abstract:
Study of the local optical properties using electron beam (e-beam) can provide a valuable information concerning the inspection of the materials quality, the presence of the different phase inclusions and defects. Halide perovskites have been shown to be highly sensitive to external stress conditions like ambient atmosphere, light, and heat. In this paper, the cathodoluminescence (CL) spectroscopy…
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Study of the local optical properties using electron beam (e-beam) can provide a valuable information concerning the inspection of the materials quality, the presence of the different phase inclusions and defects. Halide perovskites have been shown to be highly sensitive to external stress conditions like ambient atmosphere, light, and heat. In this paper, the cathodoluminescence (CL) spectroscopy has been exploited to carry out the investigation of CH3NH3PbBr3 monocrystals under low energy electron beam irradiation. The CL spectra exhibited strong transformation with the increase of the irradiation dose and significant shifts of the peak maximums from 2.23 eV to >2.5 eV. Utilizing a larger e-beam energy (>20 keV) was found to be preferable to slow down the dynamics of the decomposition and corrosion. The mechanisms of the changes in MAPbBr3 properties after e-beam exposure and correlation to the in-depth distribution of deposited energy were discussed.
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Submitted 11 May, 2023;
originally announced May 2023.
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Indium do**-induced change in the photoconduction spectra of o-TaS3
Authors:
V. F. Nasretdinova,
E. B. Yakimov,
S. V. Zaitsev-Zotov
Abstract:
Impurities and defects are known to affect the properties of the charge density wave (CDW) state but the influence of impurities on the density of states inside the Peierls gap remains largely unexplored. Here we present an experimental study of the effect of indium impurities on photoconduction spectra of CDW compound orthorhombic TaS$_3$. We use the temperature diffusion method to introduce indi…
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Impurities and defects are known to affect the properties of the charge density wave (CDW) state but the influence of impurities on the density of states inside the Peierls gap remains largely unexplored. Here we present an experimental study of the effect of indium impurities on photoconduction spectra of CDW compound orthorhombic TaS$_3$. We use the temperature diffusion method to introduce indium into a sample from preliminary attached In contacts. The concentration of In after 23 hours of diffusion is found to be nonuniform and strongly dependent on the distance to the contacts. The diffusion affects the spectral range 0.15-0.25 eV, increasing the photoconduction amplitude linearly with diffusion time. The optical gap value obtained from the measurements is $2Δ= 0.25$ eV and the tail of states below $2Δ$ is associated with the impurities in agreement with the Tüttö-Zawadowski theory. Diffusion-induced modification of current-voltage characteristics and decrease of the Peierls temperature are also observed. Neither changes in photoconduction spectra nor in the Peierls transition temperature of the control sample with Au contacts are found.
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Submitted 2 November, 2014;
originally announced November 2014.
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Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures
Authors:
O. V. Feklisova,
E. B. Yakimov,
L. V. Arapkina,
V. A. Chapnin,
K. V. Chizh,
V. P. Kalinushkin,
V. A. Yuryev
Abstract:
Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hyster…
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Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hysteresis was observed. DLTS spectra measured on the structures with different QD arrangements demonstrated essential distinctions.
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Submitted 10 August, 2009;
originally announced August 2009.
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Effect of mesoscopic inhomogeneities on the critical current of bulk melt-textured YBCO
Authors:
L. S. Uspenskaya,
I. G. Naumenko,
G. A. Emelchenko,
Yu. B. Boguslavskii,
S. A. Zverkov,
E. B. Yakimov,
D. Litzkendorf,
W. Gawalek,
A. D. Caplin
Abstract:
The downsizing 211-inclusions and an increase of their density leads to rise in mean critical current value in Y-based melt textured material. Very often 211-inclusion are spread in the material volume non-homogeneous, with typical scale 50 - 100 micrometer. Therefore it is difficult to find the real correlation between local critical current and the inclusions distribution. We performed a study…
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The downsizing 211-inclusions and an increase of their density leads to rise in mean critical current value in Y-based melt textured material. Very often 211-inclusion are spread in the material volume non-homogeneous, with typical scale 50 - 100 micrometer. Therefore it is difficult to find the real correlation between local critical current and the inclusions distribution. We performed a study of a local critical current using modified magneto-optic technique on a melt-textured YBaCuO ceramic, found the areas with constant current and studied the real structure of the material in the areas, inclusions distribution and their sizes, by scanning electron microscopy and X-ray microanalysis. The estimation of a pinning in these places, by taking into account the amount of inclusions and the length of their boundaries, and comparison with the value of local critical current reveals a strait correlation between the density of inclusions and the current but shows remarkable quantitative disagreement.
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Submitted 16 March, 2003;
originally announced March 2003.
