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Optical coupling between atomically-thin black phosphorus and a two dimensional photonic crystal nanocavity
Authors:
Yasutomo Ota,
Rai Moriya,
Naoto Yabuki,
Miho Arai,
Masahiro Kakuda,
Satoshi Iwamoto,
Tomoki Machida,
Yasuhiko Arakawa
Abstract:
Atomically-thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared, which includes the technologically important optical telecommunication…
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Atomically-thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared, which includes the technologically important optical telecommunication wavelength bands. In this letter, we demonstrate the optical coupling between atomically-thin BP and a 2D photonic crystal nanocavity. We employed a home-build dry transfer apparatus for placing a thin BP flake on the surface of the nanocavity. Their optical coupling was analyzed through measuring cavity mode emission under optical carrier injection at room temperature.
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Submitted 28 September, 2018;
originally announced September 2018.
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Heat transfer at the van der Waals interface between graphene and NbSe2
Authors:
Yohta Sata,
Rai Moriya,
Naoto Yabuki,
Satoru Masubuchi,
Tomoki Machida
Abstract:
Graphene has been widely used to construct low-resistance van der Waals (vdW) contacts to other two-dimensional (2D) materials. However, a rise of electron temperature of the graphene under a current flow has not been seriously considered in many applications. Owing to its small electronic heat capacity and electron-phonon coupling, electron temperature of the graphene can be increased easily by t…
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Graphene has been widely used to construct low-resistance van der Waals (vdW) contacts to other two-dimensional (2D) materials. However, a rise of electron temperature of the graphene under a current flow has not been seriously considered in many applications. Owing to its small electronic heat capacity and electron-phonon coupling, electron temperature of the graphene can be increased easily by the application of current. The heat generated within the graphene is transferred to the contacted 2D materials through the vdW interface and potentially influences their properties. Here, we compare the superconducting critical currents of an NbSe2 flake for two different methods of current application: with a Au/Ti electrode fabricated by thermal evaporation and with a graphene electrode contacted to the NbSe2 flake through a vdW interface. The influence of the heat transfer from the graphene to NbSe2 is detected through the change of the superconductivity of NbSe2. We found that the critical current of NbSe2 significantly reduces when the current is applied with the graphene electrode compared to that from the conventional Au/Ti electrode. Further, since the electron heating in graphene exhibits ambipolar back-gate modulation, we demonstrate the electric field modulation of the critical current in NbSe2 when the current is applied with graphene electrode. These results are attributed to the significant heat transfer from the graphene electrode to NbSe2 through vdW interface.
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Submitted 18 July, 2018;
originally announced July 2018.
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Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide
Authors:
Miho Arai,
Rai Moriya,
Naoto Yabuki,
Satoru Masubuchi,
Keiji Ueno,
Tomoki Machida
Abstract:
We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an exter…
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We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction.
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Submitted 11 September, 2015;
originally announced September 2015.
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Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
Authors:
Yohta Sata,
Rai Moriya,
Sei Morikawa,
Naoto Yabuki,
Satoru Masubuchi,
Tomoki Machida
Abstract:
We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an extern…
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We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications.
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Submitted 18 July, 2015;
originally announced July 2015.
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Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio
Authors:
Yohta Sata,
Rai Moriya,
Takehiro Yamaguchi,
Yoshihisa Inoue,
Sei Morikawa,
Naoto Yabuki,
Satoru Masubuchi,
Tomoki Machida
Abstract:
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature depende…
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Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature dependence of the conductance, the modulation of Schottky barrier height Δφ has been directly determined. We observed significant MoS2 layer number dependence of Δφ. Moreover, we demonstrate that the device which shows larger Δφ exhibits larger current modulation; this is consistent with the fact that the transport of these devices is dominated by graphene/MoS2 Schottky barrier.
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Submitted 7 March, 2015;
originally announced March 2015.
